�@�h��[��ڋ@��ɂ͌y��߂��邪�A�@�̂̃t��C�g�R��g��[��[��̎w�߂ɏ]��ă��[�^�[��쓮��ESC�ɂ��y�ʉ��K�v�Ƃ��BGaN�͓��쎞�̔��M�ʂ��Ȃ��A��i�̏��^�y�ʉ��҂ł��邪�A��̐��\��o��ɂ̓m�C�Y�΍��H��݌v�ɉۑ肪��B

�@��J��ꂽ�h��[��pESC�́A��Ђ��^��[�^�[�J��Ŕ|��^�y�ʉ��݌v�Z�p�ƍ��x��Z�p�ɂ��A�d�ʂ��]��3��1�ɗ}��Ă��B�܂��A��[�^�[��コ��A�t��C�g�R��g��[��[��̎w�߂ɑ΂��Ē��Ƀ��[�^�[��쓮��Ǝ��Z�p�ɂ��A��s��̐��䐸�x��P��Ĉ��S��ƐM��̍��^�p��\�ɂ��B

�@�G�b�WAI�i�l�H�m�\�j��p��Ԑ��@�\��ڂ��A��[�^�[�ُ̈팟�m�⓮��̈��萫��コ��Ă��B

�@��o�́A��o�́A��o�͂�3��f��̊J��i�߂Ă��A2026�N1��̐��i��ڎw��Ă��B��{�b�g��d��o�C�N�Ȃǂɂ��K�p�\�ŁA�h��[��ȊO�ł��^�y�ʉ��⃂�[�^�[��̌��オ��҂ł��B

�h��[��pESC�̎�v��m�N��b�N�Ŋg��n �o��F�j�f�b�N

�˂��̑��́u�h��[��v�̋L��͂��

�֘A�L��

GaN�f�o�C�X�̐^��͏c�^�ɂ��A�L�c��GaN�E�G�n�[��GaN-MOSFET��I
�L�c��́A�u�l�Ƃ��܂̃e�N�m��W�[�W 2025 YOKOHAMA�v�ɂ��āAGaN�E�G�n�[��GaN-MOSFET�Ɋւ��錤��J��ʂ��I��B
��E��ƂȂ�V��b�g�L�[�_�C�I�[�h��̎Y�ƗpGaN�p��[�g��W�X�^
Infineon Technologies�́A�V��b�g�L�[�_�C�I�[�h��̎Y�ƗpGaN�g��W�X�^�Ƃ��Ă͐��E��ƂȂ�uCoolGaN�g��W�X�^G5�v�t�@�~��[�𔭕\��B�f�b�h�^�C��ጸ��A�V�X�e��̍��Ɋ�^��B
$TI��ÍH��GaN�p��[��̂𐶎Y�A�č��_�ƍ��킹�Đ��Y�\�͂�4�{��$ TI��ÍH��GaN�p��[��̂𐶎Y�A�č��_�ƍ��킹�Đ��Y�\�͂�4�{��
TI�́A��ÍH��GaN�p��[��̂̐��Y��J�n��Ɣ��\��B��܂�TI��GaN�p��[��̂��_��X�H��Ő��Y��Ă��A�V��ɉ�ÍH�ꂪ��邱�ƂŐ��Y�\�͂͏]��4�{�ɑ��B
$��{TI��99��GaN�x�[�XIPM�𔭕\�A��Ɠd�̃��[�^�[��ɍœK$ ��{TI��99��GaN�x�[�XIPM�𔭕\�A��Ɠd�̃��[�^�[��ɍœK
��{�e�L�T�X�E�C��X�c��c�i��{TI�j�́A�G�A�R��①�ɂȂǂ̔��Ɠd�ɗp��o��150�`250W�̃��[�^�[�A�v��P�[�V��ɁA99��̌��GaN�f�o�C�X��p��IPM�i�C��e��W�F��g�p��[��W��[��j�uDRV7308�v�𔭕\��B
GaN FET�̃f�b�h�^�C��ق�0�ɁA�A�i��O�E�f�o�C�Z�Y��i�Q
�A�i��O�E�f�o�C�Z�Y��GaN�i��K��E��j�\��[�V��ɂ��Đ��B2023�N��100V�Ή��̍~��R��g��[��[IC�ƃh��C�oIC�𓊓��Ă��A��[�^�[��͂��߂Ƃ��Y�Ƌ@��A��^�̈�Ðf�f�@��A�f�[�^�Z��^�[�A�F��@��ȂǂɌ��Ă��j��B
SiC�f�o�C�X�𐂒��Ŏ�|��ST�}�C�N��AGaN�f�o�C�X�̏��X
ST�}�C�N��G��N�g��j�N�X�́A�u�I�[�g��[�e�B�u��[��h2024�v�ɂ��āASiC�f�o�C�X�̌��ޗ��E�G�n�[�A��W��[��A��p�n�܂ł��܂߂��V�X�e��Ɏ��܂Ő��Ŏ�|��铯�Ђ̃\��[�V��ꓰ�ɔ�I��B