HY29F400芯片：高性能低功耗5V操作指南

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HY29F400芯片手册提供了对一款高性能、低功耗闪存存储器的详尽介绍，这款器件专为满足现代电子系统设计中的苛刻要求而打造。以下是该芯片的主要特点： 1. 5伏读写及擦除：为了减少系统级别的电源需求，HY29F400支持在5伏电压下进行读取、编程和擦除操作，这极大地简化了设计时的供电管理。 2. 高性能：得益于其快速的数据访问能力，HY29F400能够实现50纳秒级别的典型存取时间，这对于需要实时响应的应用来说是非常关键的性能指标。 3. 低功耗：在正常运行状态下，它具有极低的电流消耗。例如，在字节模式下，典型活动读取电流仅为20毫安，而在字模式下则为28毫安。编程/擦除操作的电流典型值为30毫安，而处于CMOS休眠模式下的电流更低，仅为5微安，这显著节省了能源。 4. 兼容标准：该芯片遵循JEDEC标准，确保与单电源闪存设备的包装、引脚布局和命令集兼容，使得系统集成更为便捷。此外，它还提供卓越的意外写保护，提高了数据的安全性。 5. 灵活的sector erase（扇区擦除）架构：HY29F400支持多种扇区大小，包括16KB、8KB、32KB和64KB字节模式扇区以及8KB、4KB、16KB和32KB的字模式扇区。用户可以根据应用需求选择不同的扇区配置，并且一个命令可以同时擦除多个扇区，甚至支持全芯片擦除。 6. Erase Suspend/Resume 功能：这种特性允许在执行擦除操作时临时暂停，以便在不被擦除的扇区上读取或编程数据，提高了数据处理的灵活性。 7. 扇区保护：通过锁定特定扇区，可以防止这些区域内发生编程或擦除操作，有助于保护重要数据免受意外修改。 8. 临时扇区解锁：为了临时进行修改，芯片支持临时解除部分扇区的保护，便于进行必要的编程调整。综合以上特性，HY29F400芯片为设计者提供了高性能、低功耗和灵活度高的解决方案，适用于各种需要高效存储和数据保护的应用场景，如嵌入式系统、工业控制、物联网设备等。在实际应用中，设计师需要深入理解这些特性，并结合具体的设计要求，合理配置和使用HY29F400来优化系统性能和功耗。

Rev. 1.0/Jan. 02

HY29F400A

Table 3. HY29F400A Bus Operations Requiring High Voltage

1, 2

Notes:

1. L = V

, H = V

, X = Don’t Care. See DC Characteristics for voltage levels.

2. Address bits not specified are Don’t Care.

3. See text for additional information.

4. SA = sector address. See Table 1.

5. DQ[15] is the A[-1] input in Byte Mode (BYTE# = L).

The ‘Device Commands’ section of this document

provides details on the specific device commands

implemented in the HY29F400A.

Output Disable Operation

When the OE# input is at V

, output data from the

device is disabled and the data bus pins are placed

in the high impedance state.

Standby Operation

When the system is not reading from or writing to

the HY29F400A, it can place the device in the

Standby mode. In this mode, current consump-

tion is greatly reduced, and the data bus outputs

are placed in the high impedance state, indepen-

dent of the OE# input. The Standby mode can be

invoked using two methods.

The device enters the CE# CMOS Standby mode

if the CE# and RESET# pins are both held at V

± 0.5V. Note that this is a more restricted voltage

range than V

. If both CE# and RESET# are held

High, but not within V

± 0.5V, the device will be

in the CE# TTL Standby mode, but the standby

current will be greater.

The device enters the RESET# CMOS Standby

mode when the RESET# pin is held at V

± 0.5V.

If RESET# is held Low but not within V

± 0.5V,

the HY29F400A will be in the RESET# TTL

Standby mode, but the standby current will be

greater. See Hardware Reset Operation section

for additional information on the reset operation.

The device requires standard access time (t

) for

read access when the device is in either of the

standby modes, before it is ready to read data. If

the device is deselected during erasure or pro-

gramming, it continues to draw active current until

the operation is completed.

Hardware Reset Operation

The RESET# pin provides a hardware method of

resetting the device to reading array data. When

the RESET# pin is driven Low for the minimum

specified period, the device immediately termi-

nates any operation in progress, tri-states the data

bus pins, and ignores all read/write commands for

the duration of the RESET# pulse. The device also

resets the internal state machine to reading array

data. If an operation was interrupted by the as-

sertion of RESET#, it should be reinitiated once

the device is ready to accept another command

sequence to ensure data integrity.

Current is reduced for the duration of the RESET#

pulse as described in the Standby Operation sec-

tion above.

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Rev. 1.0/Jan. 02

HY29F400A

Figure 1. Sector Protect Procedure

If RESET# is asserted during a program or erase

operation, the RY/BY# pin remains Low (busy) until

the internal reset operation is complete, which re-

quires a time of t

READY

(during Automatic Algo-

rithms). The system can thus monitor RY/BY# to

determine when the reset operation completes,

and can perform a read or write operation t

after

RY/BY# goes High. If RESET# is asserted when

a program or erase operation is not executing (RY/

BY# pin is High), the reset operation is completed

within a time of t

. In this case, the host can per-

form a read or write operation t

after the RE-

SET# pin returns High .

The RESET# pin may be tied to the system reset

signal. Thus, a system reset would also reset the

device, enabling the system to read the boot-up

firmware from the Flash memory.

Sector Protect/Unprotect Operations

Hardware sector protection can be invoked to dis-

able program and erase operations in any single

sector or combination of sectors. This function is

typically used to protect data in the device from

unauthorized or accidental attempts to program

or erase the device while it is in the system (e.g.,

by a virus) and is implemented using programming

equipment. Sector unprotection re-enables the

program and erase operations in previously pro-

tected sectors.

Table 1 identifies the eleven sectors and the ad-

dress range that each covers for both versions of

the device. The device is shipped with all sectors

unprotected.

The sector protect/unprotect operations require a

high voltage (V

) on address pin A[9] and the CE#

and/or OE# control pins, as detailed in Table 3.

When implementing these operations, note that

must be applied to the device before applying

, and that V

should be removed before remov-

ing V

from the device.

The flow chart in Figure 1 illustrates the proce-

dure for protecting sectors, and timing specifica-

tions and waveforms are shown in the specifica-

tions section of this document. Verification of pro-

tection is accomplished as described in the Elec-

tronic ID Mode section and shown in the flow chart.

START

Set TRYCNT = 1

Set A[9] = OE# = V

Set Address:

A[17:12] = Sector to Protect

CE# = V

RESET# = V

WE# = V

Wait t

WPP1

A[9] = V

A[17:12] = Sector to Protect

OE# = CE# = V

A[6] = A[0] = V

, A[1] = V

Read Data

Data = 0x01?

Protect Another

Sector?

YES

TRYCNT = 25?

Increment TRYCNT

YES

DEVICE FAILURE

YES

Remove V

from A[9]

SECTOR PROTECT

COMPLETE

APPLY V

WE# = V

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