Types of on-chip capacitors: MOS, MIM, Poly, Diffusion, Trench, Fringe

View profile for Shivraj Dharne

Executive Director | Former Site CTO | 15 US Patents in Semiconductor Design

There are several types of on-chip capacitors: ⸻ 1. MOS Capacitor (MOSCAP) Structure: • Gate (poly or metal) • Thin gate oxide (SiO₂ or high-κ dielectric) • Substrate (usually doped silicon) Metal gate ──────────── Gate oxide ──────────── Silicon substrate Characteristics: • Very high capacitance density (since oxide is very thin) • Nonlinear (depends on voltage — accumulation/depletion/inversion) • Used in: • MOS varactors (tunable capacitors) • DRAM cells (storage capacitor) • Sometimes in analog for small coupling Issues: • Voltage-dependent C–V behavior • Parasitic leakage and non-linearity ⸻ 2. Metal–Insulator–Metal (MIM) Capacitor Structure: • Metal 1 (bottom plate) • Dielectric (e.g., Si₃N₄, SiO₂, Al₂O₃, or HfO₂) • Metal 2 (top plate) Metal 2 ← top plate ──────────── Dielectric ──────────── Metal 1 ← bottom plate Characteristics: • Linear capacitance vs voltage • High quality factor (Q) • Moderate-to-high capacitance density (≈ 1–10 fF/µm²) • Used in: • Analog/RF circuits (filters, ADC/DAC, matching) • Precision analog design Issues: • Consumes metal area (larger than MOSCAP for same capacitance) • Adds extra mask layers (cost) ⸻ 3. Poly–Poly Capacitor (Poly Capacitor) Structure: • Two layers of polysilicon separated by a dielectric (usually oxide or nitride) Poly 2 ──────────── Inter-poly dielectric ──────────── Poly 1 Characteristics: • Fairly linear C–V characteristics • Good matching • Used in: • Analog circuits (in older CMOS before MIM) • Charge pumps, filters, and ADC references Issues: • Requires double-poly process (not always available) • Moderate capacitance density (~0.7–1.5 fF/µm²) ⸻ 4. Diffusion Capacitor (Junction Capacitor) Structure: • PN junction (e.g., n+ diffusion in p-substrate) n+ diffusion ──────────── Depletion region ──────────── p-substrate Characteristics: • Capacitance from depletion region • Voltage-dependent (nonlinear) • Small area (but low accuracy) • Used in: • ESD diodes • Parasitic modeling • Some tunable analog designs (varactors) Issues: • Highly nonlinear (depends on reverse bias) • Significant parasitic leakage ⸻ 5. Trench Capacitor Structure: • Deep trench etched into silicon • Sidewalls lined with dielectric • Filled with conductive polysilicon Top view: Deep trench with dielectric lining Characteristics: • Very high capacitance density (used in DRAM) • Used in embedded memory or specialized analog processes Issues: • Complex fabrication (deep trench etch and refill) • Costly, mostly used in DRAM or specialized nodes ⸻ 6. Fringe Capacitor (Interdigitated Metal Capacitor) Structure: • Interleaved metal fingers (comb-like) • Capacitance from fringing fields between fingers Characteristics: • Very linear and easy to make • Used in: • RF designs (filters, tuning) • On-chip matching networks Issues: • Low capacitance per area (depends on metal spacing) • Sensitive to process variation and parasitic coupling

Pradeep Khannur

Solution Director - HCLTech, Senior Member IEEE, RF & mmWave and AMS Circuits & System Design/PSV Specialist

3d

MOM Capacitor

Praashant Shukla

Co-Founder at EPR.LiFE : SPLM

3d

Capacity and Capability building within the constraints! Keep writing and writing!

Gouse Ali Khan

ASIC Physical Design Engineer

3d

Thanks for sharing.

Very insightful, thanks for sharing

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