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QP Model Eced

This document is a model examination from SRI SHANMUGHA College of Engineering and Technology for their Electronics and Communication Engineering department. The exam covers topics in electric circuits, electronics devices, and semiconductor physics. It is divided into two parts, with Part A containing 10 short answer questions worth 2 marks each. Part B contains 5 longer answer questions worth 16 marks each, focusing on circuit analysis techniques like superposition and star-delta transformation, resonant circuits, diode and transistor characteristics, and operational principles of devices like MOSFETs, SCRs, and lasers.

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Shree Ram Senthil Subramaniam
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32 views

QP Model Eced

This document is a model examination from SRI SHANMUGHA College of Engineering and Technology for their Electronics and Communication Engineering department. The exam covers topics in electric circuits, electronics devices, and semiconductor physics. It is divided into two parts, with Part A containing 10 short answer questions worth 2 marks each. Part B contains 5 longer answer questions worth 16 marks each, focusing on circuit analysis techniques like superposition and star-delta transformation, resonant circuits, diode and transistor characteristics, and operational principles of devices like MOSFETs, SCRs, and lasers.

Uploaded by

Shree Ram Senthil Subramaniam
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOC, PDF, TXT or read online on Scribd
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SRI SHANMUGHA COLLEGE OF ENGINEERING AND TECHNOLOGY

Pullipalayam, Morur Post, Sankari, Salem 637 304 Department of Electronics and Communication Engineering
Model Examination July 2012 Common to ECE EC2151 ELECTRIC CIRCUITS AND ELECTRON DEVICES Date: 27.07.12 Answer ALL questions. PART A (10 X 2 = 20marks)
1. Define Superposition theorem 2. Determine the Missing Voltage across the elements in the circuit.

Time: 3 Hrs

3. What is meant by quality factor? 4. Define transient state.


5. Differentiate between intrinsic and extrinsic semiconductors.

6. Give short notes on diffusion capacitance. 7. Draw the symbol of P-channel MOSFET. 8. What is (a) LED (b) LCD? 9. What is forward break over voltage and reverse break over voltage? 10. What are the applications of tunnel diode? PART B (5 X 16 = 80 marks)
11. (a) (i)Find an equivalent resistance between A and B in the following circuit using star-delta

transformation

(8)

(ii) Find the power delivered by the 50 V source in the circuit

(8)

(or) (b) Determine the current in the 10 resistor of the following circuit using superposition theorem. (16)

12. (a) (i) Derive the expression for the cut off and resonant frequencies for parallel RL circuit.(12)

(ii) Derive the bandwidth for a parallel resonance circuit with variable L value.(4) (or) (b) (i) Derive the expression for Single tuned Circuits (ii) Derive the expression for double tuned Circuits
13. (a) (i) Derive the current equation for a PN-Junction diode.

(8) (8)

(12) (4) (12) (4) (12) (4) (12) (4) (12) (4)

(ii) Compare zener diode with PN Junction diode. (Or) (b) (i) Explain the operation of zener diode and plot its characteristics. (ii) Discuss the effect of temperature on reverse saturation current.
14. (a) (i) Explain the principle and operation of CE transistor based amplifier.

(ii) Compare CE, CB and CC configuration. (or) (b) (i) Explain the operation of an Enhancement type MOSFET. (ii) Compare BJT and FET.
15. (a) (i) Explain the working and operation of SCR and plot its characteristics.

(ii) Write short notes on Photodiode. (or) (b) Write short notes on :

(i) Laser diodes (iii) UJT

(4) (4)

(ii) TRIAC (4) (iv) Photo conductive cells. (4)

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