MOSFET Modeling & Simulation with MATLAB Dr.
IsmailSaad
Lecturer Electrical&ElectronicsEngineeringProgram SchoolofEngineering&IT Universiti MalaysiaSabah(UMS)
Email:ismail_s@ums.edu.my
The MOS capacitor
(a) Physicalstructureofann+ Si/SiO2/pSiMOScapacitor (b) crosssection (c) theenergybanddiagramunder chargeneutrality (d) theenergybanddiagramat equilibrium(notethatthesurface oftheptypesubstratenearthe oxideinterfacehasbecomeweakly inverted).
EnergybanddiagramsfortheMOScapacitorwith thechargedistributionsfor3 biasconditions.
(a) Equilibrium:Electronsfromthe n+ gatetransfertothepSi substrate,resultinginapositive gateandanegativedepletion regioninthesubstrate. (b) Accumulation:Anegativevoltage isappliedtothegatewithrespect tothesubstratesuchthatholes accumulateatthesiliconto silicondioxideinterface. (c) Applied+ve 2V (d) Withtime,electronsgeneratedin thetransitionregionaretrapped inthepotentialwellatthe interfaceuntilsteadystateis reach
iac = 2fC vac
(a)Circuitformeasuringthe capacitanceofaMOScapacitor.
1 1 1 = + C Cox Cs
(b)Capacitancevoltage(CV) characteristicforaMOScapacitoratlow andhighfrequencies.
Schematicdiagramofnchannel siliconbasedMOSFETstructure
ThechannelwidthW,lengthL,and oxidethicknesstox areshown ThesymbolsS,G,D,andB represent thesource,gate,drain,andsubstrate (body)respectively.
(a) CrosssectionofannchannelFET (b)Energybanddiagramatequilibrium
Accumulation:Thechannelchargeaccumulatesinthebulk neartheoxideinterface.Inthiscasethechannelcharge consistsofelectrons.
Inversion:Theband bendingatthesurface ofthesemiconductor. Atthreshold,theFermi levelisasfarabove theintrinsiclevelat thesurface(lefthand edge)asitisbelowthe intrinsiclevelinthe bulk.
TheIDVDS characteristicsofatypical MOSFET.Thethresholdvoltageis0.5V
ParallelPlateCapacitorVs. MOSCapacitor
Q = CV C =
s A
d
o A
d
Q C
= C
(V GS
V T V ch
C s o QA = C AV C A = = = A d d
ox o ox C = = = A t ox t ox
s
qn
= =
ox
t ox
(V GS (V GT
V T V ch V ( y))
ox
t ox
QuantumChannel
(a) Squarewellvs MOSFET triangularchannel (b) Classicalvs quantum channel (c) Liftingofconduction bandbyquantum energy (d) Thewavefunction peaksatadistance awayfromthe interface (e) Classicalandquantum electronconcentration profile(ns=1012 cm2)
EffectiveCapacitancedueto QuantumEffect(QE) Si 2 Eo CQ = tQ xo = tQ 3 qET
0.9
1 = Cox CG = Cox 1+
Cox 1 + C Q 1 ox tQ
RELATIVE CAPACITANCE
1 1 1 = + CG Cox CQ
10 nm 0.85
0.8 5 nm 0.75
Si tox
0.7
0.65 10
15
20
25
30
35
40
45
50
ELECTRIC FIELD (MV/m)
GateFieldInducedMobility Degradation DuetoQE
lf =
1 + (VGT Vch )
--
o e (VGT Vch )
lf =
1 + (VGS VT Vch )
GateFieldInducedMobility Degradation DuetoQE
Example : = 0 . 13 V
1
t ox = 5 nm V T = 1 V 0
12
cm 2 = 480 V .s
C ox =
ox
t ox
3 . 9 8 . 85 10 5 10
9
F m = 6 . 9 10
F m2
V GS = V T
V GT
V GS = 3 V
V GT
cm 2 = 0 l f = 0 = 480 V .s cm 2 480 cm 2 V . s = 2V lf = = 380 1 + 0 . 13 V 1 ( 2 V ) V .s
V GS = 5 V
V GT = 4 V
lf
cm 2 480 cm 2 V . s = = 316 1 1 + 0 . 13 V ( 4 V ) V .s
Channel electron mobility and velocity (v = E) as a function of lateral field for VGS = 1.42 V
v=
EL 1+ Ec v sat
lf EL
eff =
EL 1+ Ec
lf
Ec =
dV EL dy
ModelingnanoMOSFET IDVD Characteristics
CrosssectionviewedofatypicalNchannelMOSFETwhichshowsthe transverseET andlongitudinalEL electricfieldandoxidethicknesstOX along thechannellengthL
In a nanoscale channel the validity of Ohms law that predict a linear drift velocity response to the applied electric field, = 0E is revealed to lost its supremacy as the applied electric field is now much higher than the channel critical electric field Ec. The drift velocity is now can be represented as below:
wherelf isthelowfieldOhmic mobility,theEc wasrelatedtothesaturation velocitysat andlf andthelongitudinalelectricfieldEL canbeapproximateasthe gradientofappliedvoltageValongthenegativeydirectionofthechannel:
L = lf L 1+ c
(1)
sat c = lf
ET
y=0 V=0
EL
y=L V=VD
dV ( y ) L dy
(2)
Thecurrentinthenanoscale channelisafunctionofcarrierconcentrationn, the chargeq andthevelocity ofcarrierintheinversionchannelperunitareaA:
I = nqvA
(3)
In a 2D channel, the area A of the inversion channel is a function of the channel width W and its thickness xi and the n is replaced by carrier sheet concentration ns that are the number of carrier per meter square given by:
ns = nxi (# / m 2 )
Equation(3)isnowwrittenas:
(4) (5)
I D = ns qvW
Qi = ns q = CG (VGT V ( y ))
Thedensityofinversionchargeofacurrenttoflowinthe2Dchannelisgivenby:
(6)
whereVGT =VGS VT thedifferenceofanappliedgatevoltageVGS andthreshold voltageVT ,CG isthegatecapacitanceandV(y) isthechannelvoltageiny direction. Byinvokingeq.(1)and(6)intoeq.(5),thedraincurrentinthe2Dinverted channelisrepresentedas:
Thisdraincurrenthastobeintegratealongydirectionfromy=0 toy=L or fromappliedvoltageV=0 toV=VDS thedrainvoltageintheinvertedchannel asshowninfig.below:
L I D = CG (VGT V ( y ) )lf W L 1+ c
(7)
ET
y=0 V=0
EL
y=L V=VD
Byrearrangeeq.(7)andintegrateit:
L L I D (1 + )dy = CG (VGT V ( y ) )lf LWdy c 0 0 L
(8)
ByreplacingEL =dV/dy asineq.(2)intoeq.(8):
1 dV dV I D (1 + )dy = CG (VGT V ( y ) )lf W dy c dy dy 0 0
Thus,eq.(9)simplifyto:
(9)
I D (1 +
0
L / VD
ID
1 1 2 I D .L(1 + VD ) = CG lf W VGTVD VD c .L 2
1 dV )dy = CG lf W (VGT V ( y ) )dV c dy 0 V 1 dV (1 + )dy = CG lf W (VGT V ( y ) )dV c dy 0 2 1 VD I D ( L + VD ) = CG lf W VGTVD 2 c
D
VD
(10)
Rearrangeeq.(10)anddefinedthecriticalvoltageVc as:
sat Vc = c .L = L lf
1 2 VGTVD VD CG lf W 2 ID = VD L 1+ Vc
(11)
Therefore,thedraincurrentequationofananoscale channelwhenVDS <VDsat is givenas:
VD VDsat
(12)
ThedrainsaturationcurrentIDsat ontheonsetofthevelocitysaturationsat whenVDS =VDsat isnowgivenby:
I Dsat = CG (VGT VDsat ) satW
VD VDsat
(13)
Forlongchannel(LC)thedrainvoltageVD issmallerthanthecriticalvoltageVc (VD <<Vc),thereforethedraincurrentequationisgivenby:
ID =
CG lf W L
1 2 (VGTVD VD ) 2
(14)
Determination of VDsat and IDsat
TodeterminedVDsat ,thepointonwhichthevelocitysaturate,eq.(12)and (13)mustbereconcilebymakingID thesameandmakeVD =Vdsat:
1 2 VGTVDsat VDsat CG lf W 2 = C (V V ) G GT Dsat satW V L 1 + Dsat Vc
(15)
Rearrangeeq.(15)andsolvingforVDsat:
1 2 sat VDsat ) VGTVDsat VDsat = (VGT VDsat )( L)(1 + 2 lf Vc VDsat 1 2 ) VGT VDsat VDsat = (VGT VDsat )(Vc )(1 + Vc 2
VGT VDsat 1 2 VDsat ) VDsat = (VGTVc VDsatVc )(1 + 2 Vc
VGTVDsat
1 2 2 VDsat = VGTVc + VGTVDsat VDsatVc VDsat 2
1 2 2 VDsat + VDsat + VDsatVc VGT Vc = 0 2
2 Dsat
+ 2VcVDsat 2VGT Vc = 0
(16)
Equation(16)isaquadraticandsolvingitwillgivetheVDsat as:
VDsat =
VDsat
2Vc
(2Vc )2 + 4 2VGTVc
2
2VGT = Vc 1 + 1 + Vc
VDsat
2VGT = Vc 1 + 1 Vc
(17)
TheIDsat canbedeterminedbyusingeq.(16)andsolvingitusingeq.(13):
2 VDsat + 2VcVDsat 2VGT Vc = 0
2Vc (VGT VDsat ) = V
2 Dsat
(18)
Thenbyinsertingeq.(18)intoeq.(13):
I Dsat = CG (VGT VDsat ) satW
I Dsat
2 1 VDsat = CG satW 2 Vc
I Dsat
1 V = CG satW sat 2 L
2 Dsat
lf
ThustheIDsat issimplifyingas:
I Dsat
1 CG lf W 2 = VDsat 2 L
(19)
TheIDVDS characteristicsoftheNFET:resultsfromthesimplemodel.Forthisdevice W/L=5,tox =4nm,CG =8.63 103 F/m2,andmn =500cm2/Vs.
ComparisonofIDVDS characteristicscomputedbyusingtheconstant mobilitymodel(q =0,dashedlines)andtakingintoaccounttheeffect ofthetransversefield(solidline)forq =0.13V1.Thetransversefield tendstoreducethecurrents
ThecalculatedIV characteristicsforthesimplemodelandfor NMOSandPMOSwithcarriervelocitysaturationaccountedfor.
Thesaturationvoltageasafunctionofchannel lengthfor|(VGS VT)|=2.6V.
Saturationcurrent|IDsat|asafunctionofL forn andp channelsiliconMOSFETs.Here|(VGS VT)|=2.6V,the widthtolengthratioisW/L =10,andWp =2.5Wn.
Comparisonofthesimplelongchannelmodel,themodel includingvelocitysaturation,themodelincluding bothvelocitysaturationandtheseriesresistancesRS andRD,and theactualmeasureddata.ForthisNFET device,L =0.25mm,W =9.9mm,andVT =0.3V.Thegatesource voltageis1.8V.
Forshortchanneldevices,thereductionofthe effectivechannellengthwithincreasingVDS resultsinanincreaseinID
(a)Forlongchannelsthedrainvoltagehasnegligibleeffecton thebarrieratthesourcechannelinterface.(b)Forshort channeldevicesthedrainvoltagetendstoreducethebarrierat thesourceend.(c)Theresultisthatthethresholdvoltageis decreased.Theeffectismorepronouncedasthechannelsget shorter.
Thedifferencebetweenlong andshortchannelbehavior dependsontheoxidethicknesstox,thesourceanddrain junctiondepthxj,andthedepletionregionthicknessatthe source,wS,anddrain,wD.
IllustrationofMOSFETscaling.Toreduceshort channeleffects,whenthechannellengthisreduced, thedimensionsanddopinglevelsofthedevice(a)are adjustedtoreducetheoxidethicknessandjunction depth(b).
MATLABCODING
1.DefineConstantData
hbar=1.0545887e-34; kb=1.380662e-23; q=1.6021892e-19; T=300; eox=3.9*8.8541878e-12; esi=11.9*8.8541878e-12; m3=0.98*9.109534e-31; m1=0.19*9.109534e-31;
tox=1.59*10^-9; L=80*10^-9; W=1.3*10^-6; VT=0.3542; VGS=0.7;
1.VelocitySaturationModel vth2=sqrt(pi*kb*T/(2*m1)); %non-degenerate 2D velocity vth=sqrt(2*kb*T/m1); % general thermal velocity
m2 =
vth =
k BT
2m *
2k BT mt*
%The following component calculates the vsat value for ElecFDrain infinity
13 2 for k=1:6 VGS + VT h 2 q 2 Eteff Eteff Eo = VGS(k)=0.7+(k-1)*0.1; 2m* 6t0 x 3 VGT(k)=VGS(k)-VT; Et(k)=(VGS(k)+VT)/(6*tox); Eo Eo(k)=(hbar^2/(2*m3))^(1/3)*(9*pi*q*Et(k)/8)^(2/3); zo = qEteff zo(k)=Eo(k)/(q*Et(k)); 2 (2.338 Eo ) zQM = zQM(k)=2*zo(k)/3; 3 qE teff ox toxeff(k)=tox+(eox/esi)*zQM(k); toxeff = tox + zQM si CG(k)=eox/toxeff(k); uo(k)=0.0695*exp(-0.7568*VGS(k)); % exponential fit to exp
lf = 0.07.e (V
GS
1.33 )
QuantumConfinement&MobilityModel
CG =
ox
toxeff
toxeff
= 1+ Cox 1 zQM 3 tox
ox 1 = tox + zQM tox + zQM 3 Si
2 (2.338 Eo ) = 3 qE teff
2 2 2 teff * 3
zQM
Eo zo = qEteff
h q E Eo = 2m
13
Eteff
VGS + VT 6t0 x
lf = 0.07.e
(VGS 1.33 )
Continue.Iterativesolutionforvsat when=1
V vsat2(k)=vth2; Vc = sat L VDsat1 = Vc 1 + 2 GT 1 lf Vc for j=1:10 Vc(k)=vsat2(k)*L/uo(k); VDsat1(k)=Vc(k)*(sqrt(1+(2*VGT(k)/Vc(k)))-1); n2(k)=CG(k)*(VGT(k)-VDsat1(k))/q; % 2D Carrier sheet concentration u(k)=n2(k)/NcT; %find fermi(0)eta2 eta(k)= log(exp(u(k))-1); %eta2 t1=fermi(eta(k),0.5); %find fermi 0.5 eta2 vi2(k)=vth2*(t1/u(k)); 1/ 2 ( F 2 ) end
vi 2 = vth 2
n2cm(k)=n2(k)/1e4; K(k)=CG(k)*uo(k)*W/L; IDsat1(k)=K(k)*VDsat1(k)^2/2; end
o ( F 2 )
% Idsat for full saturation
I Dsat1 =
1 CG lf W 2 VDsat1 2 L
BallisticSaturationVelocityModel
i
E=0
i
vi 2 = vth 2
2 i
vth 2 = vth
(3 / 2) (1)
vth =
k BT
2mt*
1/ 2 ( F 2 ) o ( F 2 )
vth =
2k B T mt*
E = LARGE
1 j ( ) = ( j + 1)
NC 2 = m * k BT h 2
x j dx 1 + e x
vi 2 =
.k B .T
2.m
NC 2 F1 ( F 2 ) n2 2
n2 = Nc 2F0 (2 )
F =
2( EF EC ) m*
vi 2 ND =
k BT
2m
vi 2 D =
2h
*
2n2
3m
IEEE International Conference on Semiconductor Electronics (ICSE2008) 25th 27th November 2008 (Johor Bahru)
NanoMOSFET :I VCharacteristics
1 2 V V VD GT D CG lf W 2 ID = V L 1+ D Vc
0 VD VDsat
VD VDsat
I Dsat = CG (VGT VDsat ) satW
Vc = c .L =
sat L lf
= D sat
E
T
y=0 V=0
y=L EL V=VD
V VDsat1 = Vc 1 + 2 GT 1 Vc
=1
(Full Saturation)
I Dsat1 =
1 CG lf W 2 VDsat1 2 L
El =
VDsat1 2L
1 1 x L
IEEE International Conference on Semiconductor Electronics (ICSE2008) 25th 27th November 2008 (Johor Bahru)
Continueiterativesolution<1
%The following component calculates I-V characterisitcs and alpha for finite ElecFDrain for k=1:6 alphanew=1; for i=1:20 alpha1=alphanew; s=sqrt((alpha1+((1-alpha1)*VGT(k)/Vc(k)))^2+2*alpha1*(2*alpha1-1)*VGT(k)/Vc(k)); VDsat(k)=(1/(2*alpha1-1))*((s-alpha1)*Vc(k)-(1-alpha1)*VGT(k)); alphanew=((1/alpha1)*VDsat(k)/Vc(k))/(1+((1/alpha1)*VDsat(k)/Vc(k))); end alpha(k)=alphanew; 1 [(s )Vc (1 )VGT ] V = vdrain(k)=alpha(k)*vi2(k); Dsat
V V s = + (1 ) GT + 2 (2 1) GT Vc Vc
2
(2 1)
%alpha not equal to 1 s=sqrt((alpha(k)+((1-alpha(k))*VGT(k)/Vc(k)))^2+2*alpha(k)*(2*alpha(k)-1)*VGT(k)/Vc(k)); VDsat=(1/(2*alpha(k)-1))*((s-alpha(k))*Vc(k)-(1-alpha(k))*VGT(k)); IDsat=(alpha(k)/(2*alpha(k)-1))*K(k)*Vc(k)*(alpha(k)*VGT(k)-(s-alpha(k))*Vc(k)); VDsatP(k)=VDsat; IDsatP(k)=IDsat; CG lf W end I Dsat = Vc [VGT (s )Vc ]
(2 1)
NanoMOSFET :I VCharacteristics
VDsat = 1 [(s )Vc (1 )VGT ] (2 1)
I Dsat
CG lf W = Vc [VGT (s )Vc ] (2 1) L
2
<1
V V s = + (1 ) GT + 2 (2 1) GT Vc Vc
D = sat
Ec = sat 0
E D Ec = 1 + E D Ec
ED = VDsat L
Iterative solution
IEEE International Conference on Semiconductor Electronics (ICSE2008) 25th 27th November 2008 (Johor Bahru)
Continue..
for k=1:6 VD=0:0.01:VDsatP(k); ID=(K(k)/2)*(2*VGT(k)*VD-VD.^2)./(1+(VD./Vc(k))); % for 0 V D V Dsat VDM=VDsatP(k):0.01:1.0; % for VD VDsat alphaprime=((1/alpha(k))*VDM/Vc(k))./(1+((1/alpha(k))*VDM/Vc(k))); IDMprime=alphaprime*W*CG(k)*vsat2(k)*(VGT(k)-VDsatP(k));
1 2 V V VD GT D C W 2 I D = G lf VD L 1+ Vc
I Dsat = CG (VGT VDsat ) satW
VD1=VDsatP(k):0.01:VDsat1(k); ID1=(K(k)/2)*(2*VGT(k)*VD1-VD1.^2)./(1+(VD1./Vc(k))); VD1M=VDsat1(k):0.01:1.0; ID1M=ones(1,length(VD1M))*IDsat1(k); end
1 C G lf W 2 I Dsat1 = VDsat1 2 L
PlottingGraph
% Plotting Intercept Line x=[0 0.2667 0.3311 0.3932 0.4537 0.5131 0.5716]; %VDsat1 y=[0 0.0003 0.0005 0.0007 0.0009 0.0011 0.0013]/1e-3; %IDsat1 xi=0:0.01:0.7; yi=interp1(x,y,xi,'cubic') %For VDsatP & IDsatP (Alpha < 1) x1=[0 0.1880 0.2661 0.3029 0.3387 0.3739]; y1=[0 0.0003 0.0006 0.0008 0.0010 0.0012]/1e-3; xi1=0:0.01:0.5; yi1=interp1(x1,y1,xi1,'cubic') Figure (1) plot(xi,yi,'--b',xi1,yi1,'--r',VD,ID/1e-3,'-r',VDM,IDMprime/1e-3,':r',VD1,ID1/1e-3,'b',VD1M,ID1M/1e-3, '--b','Linewidth', 3.0) hold on
%VDsatP %IDsatP
Continue..
%This block plots the experimental results on the same plot as previous %plot has "hold on" VDexp=0.1:0.1:1.0; IDexp12=[0.000487727 0.000874322 0.00114401 0.00132208 0.00144098... 0.00152452 0.0015872 0.00163731 0.00167961 0.00171686 ]/1e-3; IDexp11=[0.000455394, 0.000800693, 0.00102774, 0.00117086, 0.00126455... 0.00133073,0.00138145,0.00140317, 0.00144182, 0.00147613,]/1e-3; IDexp10=[4.1575E-04 7.1329E-04 8.9562E-04 1.0055E-03 1.0770E-03... 1.1286E-03 1.1695E-03 1.2044E-03 1.2358E-03 1.2649E-03 ] /1e-3; IDexp09=[ 3.6741E-04 6.1091E-04 7.4837E-04 8.2842E-04 8.8132E-04... 9.2118E-04 9.5439E-04 9.8396E-04 1.0114E-03 1.0376E-03]/1e-3; IDexp08=[ 3.0908E-04 4.9363E-04 5.8896E-04 6.4404E-04 6.8234E-04... 7.1317E-04 7.4037E-04 7.6569E-04 7.8995E-04 8.1361E-04] /1e-3; IDexp07=[ 2.648E-04 4.065E-04 4.604E-04 4.843E-04 5.013E-04... 5.148E-04 5.258E-04 5.352E-04 5.431E-04 5.500E-04 ]/1e-3; plot(VDexp,IDexp07, '.g',VDexp,IDexp08, '+g',VDexp,IDexp09, '*g',VDexp,IDexp10, 'xg', ... VDexp,IDexp11, 'sg' , VDexp,IDexp12, 'dg', 'MarkerSize',5.0,'Linewidth', 2.0) ylabel('\itI_{D} (mA)') xlabel('\it V_{D} (V)) hold off
I-V characteristics of 80-nm MOSFET for Gate Voltage, VGS =0.7 - 1.2. Solid lines are for VD < VDsat. The dotted lines are for VD > VDsat . The dashed lines are for =1.
Reference
1. Vijay K. Arora, Michael L. P. Tan, Ismail Saad, Razali Ismail. 20070906. ballistic Quantum Transport In A Nanoscale Metaloxidesemiconductor Field Effect Transistor. Jil. 91. American Institute Of Physics: Applied Physics Letter (apl 2007). 2. Michael L. P. Tan, Ismail Saad, Razali Ismail, Vijay K. Arora. 20070718. enhancement In Nanorc Switching Delay Due To The Resistance Blowup In Ingaas. Jil. 2. 4. World Scientific.com: World Scientific Publishing Company (nano 2007). 3. Ismail Saad , Michael L.p Tan, Ing Hui Hii, Razali Ismail And Vijay K. Arora. 20080726. Ballistic Mobility And Saturation Velocity In Lowdimensional Nanostructures. Vol. 40, No. 3 (2009) pp 540542. www.elsevier.com: Microelectronics Journal. 4. Ismail Saad , Michael L. P. Tan, Aaron Chii Enn Lee, Razali Ismail And Vijay K. Arora. 20080725. Scatteringlimited And Ballistic Transport In Nanocmos Transistors. Vol. 40, No. 3 (2009) pp 581583. Www.elsevier.com: Microelectronics Journal. 5. Michael L. P. Tan, Vijay K. Arora, Ismail Saad, Mohammad Taghi Ahmadi And Razali Ismail. 20090402. The Drain Velocity Overshoot In An 80 Nm Metaloxide semiconductor. American Institute Of Physics: Journal of Applied Physics (2009).
