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2SD1710 Silicon Diffused Power Transistor: General Description

This document provides technical specifications for a high voltage, high speed switching transistor primarily used in color television horizontal deflection circuits. Key specifications include: - Maximum collector-emitter voltage of 1500V, open base voltage of 600V, collector current of 5A and peak collector current of 10A. - Total power dissipation between 25-50W at an ambient temperature of 25°C. Saturation voltages include 5V at 4A collector current and 1A base current. - Storage temperature range of -55°C to 150°C and junction temperature range of -150°C. Transition frequency is 2-5MHz at 0.1A collector current and 5V collector-emitter voltage

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16 views1 page

2SD1710 Silicon Diffused Power Transistor: General Description

This document provides technical specifications for a high voltage, high speed switching transistor primarily used in color television horizontal deflection circuits. Key specifications include: - Maximum collector-emitter voltage of 1500V, open base voltage of 600V, collector current of 5A and peak collector current of 10A. - Total power dissipation between 25-50W at an ambient temperature of 25°C. Saturation voltages include 5V at 4A collector current and 1A base current. - Storage temperature range of -55°C to 150°C and junction temperature range of -150°C. Transition frequency is 2-5MHz at 0.1A collector current and 5V collector-emitter voltage

Uploaded by

miltoncg
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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GENERAL DESCRIPTION

Highvoltage,high-speed switching npn transistors in a


plastic package,pimarily for use in horizontal deflection
circuites of colour television receivers
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0V - 1500 V
V
CEO
Collector-emitter voltage (open base) - 600 V
I
C
Collector current (DC) - 5 A
I
CM
Collector current peak value - 10 A
P
tot
Total power dissipation T
mb
25 - 50 W
V
CEsat
Collector-emitter saturation voltage I
C
= 4.0A; I
B
= 1.0A - 5.0 V
I
csat
Collector saturation current f = 16KHz - - A
V
F
Diode forward voltage I
F
= 4.5A 1.6 2.0 V
t
f
Fall time I
Csat
= 4.5A; f = 16KHz 0.5 1.0 s
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0V - 1500 V
V
CEO
Collector-emitter voltage (open base) - 600 V
I
C
Collector current (DC) - 5 A
I
CM
Collector current peak value - 10 A
I
B
Base current (DC) - - A
I
BM
Base current peak value - - A
P
tot
Total power dissipation Tmb 25 - 50 W
T
stg
Storage temperature -55 150
T
j
Junction temperature - 150
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
I
CE
Collector cut-off current V
BE
= 0V; V
CE
= V
CESMmax
- 1.0 mA
I
CES
V
BE
= 0V; V
CE
= V
CESMmax
- 2.0 mA
T
j
= 125
V
CEOsust
Collector-emitter sustaining voltage I
B
= 0A; I
C
= 100mA - V
L = 25mH
V
CEsat
Collector-emitter saturation voltages I
C
= 4.0A; I
B
= 1.0A - 5.0 V
V
BEsat
Base-emitter satuation voltage I
C
= 4.0A; I
B
= 1.0A - 1.5 V
h
FE
DC current gain I
C
= 0.5A; V
CE
= 5V 8
V
F
Diode forward voltage - - V
f
T
Transition frequency at f = 5MHz I
C
= 0.1A; V
CE
= 5V 2 - MHz
C
c
Collector capacitance at f = 1MHz V
CB
= 10V 80 - pF
t
s
Switching times(16KHz line deflecton circuit) I
Csat
= 4.5A; L
c
=1mH; C
fb
= 4nF - - s
t
f
Turn-off storage time Turn-off fall time I
B(end)
= 0.8A; I
C
= 4.5A ; V
CC
= 105V 0.5 1.0 s
ELECTRICAL CHARACTERISTICS
TO-3PML
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: [email protected]
2SD1710
Silicon Diffused Power Transistor

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