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Transistor Biasing

- The document summarizes key topics from an electronics lecture on BJT amplifiers including homework assignments, midterm exam details, and BJT biasing techniques such as fixed base bias and self-biasing. - It provides examples of calculating bias voltages and currents for different biasing configurations and transistor gains. Small signal models are also introduced including definitions of terms like transconductance and AC base resistance. - The document concludes by discussing additional amplifier principles such as AC and DC load lines, current gain, and the emitter follower circuit.

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Arpita Saha
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0% found this document useful (0 votes)
112 views

Transistor Biasing

- The document summarizes key topics from an electronics lecture on BJT amplifiers including homework assignments, midterm exam details, and BJT biasing techniques such as fixed base bias and self-biasing. - It provides examples of calculating bias voltages and currents for different biasing configurations and transistor gains. Small signal models are also introduced including definitions of terms like transconductance and AC base resistance. - The document concludes by discussing additional amplifier principles such as AC and DC load lines, current gain, and the emitter follower circuit.

Uploaded by

Arpita Saha
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
You are on page 1/ 37

Electronics 1: Lecture 17

• BJT Amplifiers
Homework 7

•Read Chapter 7 and 9.1


•Problems
7.5, 7.11,7.25, 7.35
9.3, 9.9, 9.13, 9.18
(due on Thursday, Nov. 13)

Midterm 3 Nov 20
AC analysis, BJT

6610 students need to submit a project


proposal or choose one of the suggested
projects
BJT models :

Large Signal Model:


biasing the BJT
Fixed Base Bias:
=100: assume active
IB = (15-0.7)V/200k = 71.5μA
IC = IB = 7.15mA
VCE = 15 – 1k7.15m = 7.85V 
=300:
IC = IB = 21.45mA
bias does not adjust
for changes in 
VCE = 15 – 1k21.45m = -6.45V
Another Bias:
self-biasing
IE remains the same
IE = (VBB – 0.7)/RE IB changes …
IE = IB + IC VCC =15V
IE = IB + IB VBB = 5V
RC = RE = 2k
IE = (1 + )IB
VCE = VCC – RCIC – REIE

 = 100
 VCE = 6.44V

 = 300
 VCE = 6.42V
BJT biasing the Common Emitter:

a.) fixed bias:

b.) self biasing:

Q-point must respect


power dissipation constraints
Remember Thevenin?

R1R2
Rb =
R1 + R2
VBB = R2Vcc /(R1 + R2 )
Bias Currents:

fixed bias: VBB  v BE


iB =
Rb

T up   up  IC up
(thermal runaway)

self biasing: VBB  v BE


iB =
Rb + (1+  )RE

self biasing:  iB down


Bias Determines Quiescent Point:
Superposition: Small Signal…

iB(t) = IBQ + ib(t) VCC/(RC+RE)

vBE(t) = VBEQ + vbe(t)


Small Signal Models

AC base resistance: r (hie)


Transconductance: gm = h fe /r
h fe
Current dependent Current Source: h feib = r v be = gmv be

Another Small Signal Model
Midband CE Amplifier:

transition to
small signal
equivalent:

any FIXED
voltage  GND
Small Signal Equivalent Circuit:

VCC is an ac ground… !!!


Emitter Follower:
EF Small Signal Equivalent:
Different Small Signal Equivalents:

C.)
B.)
A.)

r = (1+hfe)re  hfere Remarks on C.):


more parameters
hfeib = hfevbe/r = gmvbe  better description…

gm = ic/vbe = iC/vBE = iC/VT


(VT = 26mV @ 300K)
 v BE  v BE
1
v BE  i
with: iC = IS e VT
1  ISe VT
 diC = ISe VT
dvBE  C dvBE
VT  VT
  
Small Signal Equivalent
90k10k
RP = = 9k
90k +10k
Given: gm=ICQ/26mV=385m/
hfe = hFE = 100
re = 26mV/ICQ = 2.6
ICQ = 10mA
Wanted: Rb=vb/ib=re(ib+100ib)/ib=263
a.) gm
9k263
b.) re Rin =  = 256
9k + 263
c.) Rin= RP||Rb
d.) Av =vc/vb= –1k100ib/2.6(101ib)= – 381

ac equivalent: small signal equivalent:


Additional Amplifier Principles
Additional Amplifier Principles
AC and DC load lines
Additional Amplifier Principles
Current Gain
Emitter Follower
Emitter Follower
Emitter Follower
Emitter Follower
Emitter Follower
The h parameters

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