Scribd
Upload
197 views3 pages

2SK3049 Power F-MOS FET Datasheet

This document summarizes the specifications and characteristics of the 2SK3049 silicon n-channel power F-MOS FET. Key features include its ability to withstand avalanches, high-speed switching capabilities, low ON-resistance, and lack of secondary breakdown. Its applications include use in contactless relays, driving circuits for solenoids and motors, and switching power supplies. The document provides tables with information on the component's maximum ratings, electrical characteristics, safe operating area, thermal resistance, and more.

Uploaded by

paijo_sulados
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
197 views3 pages

2SK3049 Power F-MOS FET Datasheet

This document summarizes the specifications and characteristics of the 2SK3049 silicon n-channel power F-MOS FET. Key features include its ability to withstand avalanches, high-speed switching capabilities, low ON-resistance, and lack of secondary breakdown. Its applications include use in contactless relays, driving circuits for solenoids and motors, and switching power supplies. The document provides tables with information on the component's maximum ratings, electrical characteristics, safe operating area, thermal resistance, and more.

Uploaded by

paijo_sulados
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 3

Power F-MOS FETs

2SK3049
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown
unit: mm
9.90.3 4.60.2 2.90.2

s Applications
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply

15.00.5

3.20.1

13.70.2 4.20.2

1.40.2 1.60.2 0.80.1

3.00.5

2.60.1

0.550.15

s Absolute Maximum Ratings (TC = 25C)


Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 600 30 5 10 62.5 40 2 150 55 to +150 Unit V V A A mJ W C C
1 2

2.540.3 3 5.080.5

1: Gate 2: Drain 3: Source TO-220D Package

Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature
*

TC = 25C Ta = 25C

L = 5mH, IL = 5A, 1 pulse

s Electrical Characteristics (TC = 25C)


Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr td(off) tf VDD = 200V, ID = 3A VGS = 10V, RL = 66.6 Conditions VDS = 480V, VGS = 0 VGS = 30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 3A VDS = 25V, ID = 3A IDR = 5A, VGS = 0 1200 VDS = 20V, VGS = 0, f = 1MHz 140 40 20 30 150 50 1.7 600 2 0.85 3.4 1.6 5 1.5 min typ max 100 1 Unit A A V V S V pF pF pF ns ns ns ns

Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Turn-off time (delay time) Fall time

Power F-MOS FETs


Area of safe operation (ASO)
100 30 10 t=1ms 3 1 0.3 100ms 0.1 0.03 0.01 1 3 10 30 100 300 1000 DC 10ms 60

2SK3049
PD Ta
10 (1) TC=Ta (2) Without heat sink IAS max.

IAS L-load
TC=25C

Allowable power dissipation PD (W)

Non repetitive pulse TC=25C

Avalanche current IAS (A)

50

62.5mJ

Drain current ID (A)

40 (1) 30

0.3

20

0.1

10 (2) 0 0 20 40 60 80 100 120 140 160

0.03

0.01 0.1

0.3

10

Drain to source voltage VDS (V)

Ambient temperature Ta (C)

L-load (mH)

ID VGS
VDS=25V

RDS(on) ID
Drain to source ON-resistance RDS(on) ()
2.5 5

| Yfs | ID
Forward transfer admittance |Yfs| (S)
VGS=10V VDS=25V TC=0C 4 25C 100C 3

10

2.0

TC=100C

Drain current ID (A)

TC=100C 6

1.5 25C 1.0 0C

25C 0C

0.5

0 0 2 4 6 8 10

0 0 2 4 6 8

0 0 2 4 6 8

Gate to source voltage VGS (V)

Drain current ID (A)

Drain current ID (A)

Rth(t) t
102 (1) Without heat sink (2) With a 100 100 2mm Al heat sink (1)

Thermal resistance Rth(t) (C/W)

10

(2)

101

102 104

103

102

101

10

102

103

104

Time t (s)

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

You might also like