Zener Effect
Zener Effect
Zener effect
The Zener effect is a type of electrical breakdown in a reverse biased p-n diode in which the electric field across the diode breaks some of the covalent bonds of the semiconductor atoms leading to a large number of free minority carriers, which suddenly increase the reverse current.[1] Zener breakdown is employed in a Zener diode.
Mechanism
Under a very high reverse voltage, the p-n junction's depletion region expands leading to a high strength electric field across the junction. This electric field The I-V curve for a diode showing avalanche and Zener breakdown. Note that the acts to break covalent bonds of the voltage increments in the negative range of the x-axis are larger than those in the positive range semiconductor atoms which liberates a large number of free minority carriers. This suddenly increases the reverse current and give rise to the high slope resistance of the Zener diode (i.e. the voltage across the diode stays very close to a well defined and constant value, with increasing current).
References
[1] "PN junction breakdown characteristics" (http:/ / www. circuitstoday. com/ pn-junction-breakdown-characteristics). Circuits Today. August 25 2009. . Retrieved August 16 2011. [2] (http:/ / people. seas. harvard. edu/ ~jones/ es154/ lectures/ lecture_2/ breakdown/ breakdown. html) Zener and Avalanche Breakdown/Diodes, School of Engineering and Applied Sciences, Harvard University
License
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