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Electron Beam Lithography

This document summarizes electron beam lithography (EBL) techniques and applications. It discusses two main EBL methods: electron beam direct write, which uses an electron gun to directly pattern a resist, and electron projection lithography, which transfers a pattern. It also covers EBL resist types and limitations, as well as research and industrial applications of EBL such as exposure masks and nanostructures.

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Amey Ranjekar
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231 views14 pages

Electron Beam Lithography

This document summarizes electron beam lithography (EBL) techniques and applications. It discusses two main EBL methods: electron beam direct write, which uses an electron gun to directly pattern a resist, and electron projection lithography, which transfers a pattern. It also covers EBL resist types and limitations, as well as research and industrial applications of EBL such as exposure masks and nanostructures.

Uploaded by

Amey Ranjekar
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Apoorva M. Rnjekar M.

Tech-Nanotechnology ICNTAA

Patterning techniques The electron beam lithography Applications of the EBL

Patterning Techniques

Criteria about different techniques Resolution Speed Easy fabrication Cost

The electron beam lithography


Types of EBL
1. 2.

Electron Beam Direct Write Electron Projection Lithography

Bragg-Fresnel lens for x-rays Paul Scherrer Institute

Electron Beam Direct Write


An electron gun or electron source that supplies the electrons. An electron column that 'shapes' and focuses the electron beam. A mechanical stage that positions the wafer under the electron beam. A wafer handling system that automatically feeds wafers to the system and unloads them after processing. A computer system that controls the equipment.

Electron Beam Direct Write


Types of electron guns Thermoionic Field emission

Write-field (WF) Scanning methods Raster scan Vector scan


Raith 150 Manual (Nanostructure Physics Dept. KTH) Anders Liljeborg

Electron Projection Lithography


Electron Beam Direct Write Electron Projection Lithography Limited throughput Huge penetration depth of electrons

New solutions

SCALPEL (Bell Laboratories and Lucent technologies) 1995 PREVAIL (IBM) 1999

Electron Projection Lithography


SCALPEL
High contrast Image reduction

PREVAIL
Larger effective field

Electron beam resists


1. 2. 3.

Important parameters Types of resist Resist limitations

EBL resists
Important parameters Resolution (nm) Sensitivity (C/cm^2) Types of resist Positive resist Polymethyl methacrylate (PMMA) Negative resist
Recent progress in electron-beam resists for advanced mask-making by D.R.Medeiros, A.Aviram, C.R.Guarnieri, W.S.Huang, R.Kwong, C.K.Magg, A.P.Mahorowala, W.M.Moreau, K.E.Petrillo, and M.Angelopoulos

Resist limitations
Tendency of the resist to swell in the developer solution. Electron scattering within the resist. Broadens the diameter of the incident electron beam. Gives the resist unintended extra doses of electron exposure .

Applications of Electron Beam Lithography


Research
- Nanopatterning on Nanoparticles - Nanowires - Nanopillars - Gratings - Micro Ring Resonators - Nanofluidic Channels

Industrial / Commercial
- Exposure Masks for Optical Lithography - Writing features

Some other Applications of EBL


Cryo-electric devices Optoelectronic devices Quantum structures Multi-gate Devices Transport mechanism for semi and superconductor interfaces Optical devices Magnetism Biological Applications Nano-MEMS Nanofluidics

Thank You

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