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Lab 1: Diode I-V Characteristics

This document summarizes an electronics lab experiment on measuring the voltage-current (I-V) characteristics of germanium and silicon diodes. The objectives are to study diode properties, obtain I-V curves for each, and compare them. Procedures describe connecting diodes in a circuit to measure forward and reverse bias characteristics, recording results in tables, and plotting the curves on a graph to analyze and compare. Conclusions are to be drawn about differences between the diodes based on the experimental results.

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Da Harlequin Gal
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1K views

Lab 1: Diode I-V Characteristics

This document summarizes an electronics lab experiment on measuring the voltage-current (I-V) characteristics of germanium and silicon diodes. The objectives are to study diode properties, obtain I-V curves for each, and compare them. Procedures describe connecting diodes in a circuit to measure forward and reverse bias characteristics, recording results in tables, and plotting the curves on a graph to analyze and compare. Conclusions are to be drawn about differences between the diodes based on the experimental results.

Uploaded by

Da Harlequin Gal
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Electronic Fundamentals Laboratory

Semester 2

1.

Lab 1: Diode I-V Characteristics

Lab Objectives:
1. To study the properties of a junction diode. 2. To obtain the characteristics of germanium and silicon diodes. 3. To compare the properties of germanium and silicon diodes.

Equipment and Components:


Laboratory Instrument Station. Student Lab Kit Decade Resistance Box Locktronics Kit Tenma (DMM) Germanium Diode, OA91 Silicon Diode, IN4001 1k Resistor

1.1.

Procedure Explanation

The diodes characteristic will be obtained using the circuit shown in Fig 1.1, by measuring the current through the diode (IF) as a function of the voltage across the diode (VF). This will be repeated at a number of different points and in this way the characteristic will be drawn.

1.2.

Germanium Diode

Connect the Germanium diode, OA91 on the Lockronics board as shown in Fig 1.1, using the Mini-lab bipolar power-supply for VS. This diode has a black band at the cathode end.

Figure 1.1 Circuit for Obtaining Diode Characteristics.

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Electronic Fundamentals Laboratory

Semester 2

Now answer these questions: (a) Is the characteristic that will be obtained using the circuit of Fig.1.1 the forward or the reverse characteristic of the diode? Explain. (b) Why is there a resistor in the circuit?

1.3.

Meter Settings

First decide which Meter will act as the Voltmeter and which will act as Milli-ammeter. Set the Voltmeter to the 2V DC range and the Milli-ammeter to its 20mA range. (NB: if using the TENMA Auto Power-Off Digital Multi Meter (DMM) to measure current insert the positive lead into the A /mA Terminal and set the rotary selector to mA!). Further on in the experiment you will be required to change the ranges.

1.4.

Forward-Bias Measurements

Perform the measurements by making fine adjustments to the Power-supply as per the left half side of Table 1.1 (Forward Bias) and record your results in the table.

1.5.

Reverse Polarity of Diode

Switch off the power supply. Reverse the polarity of the diode as shown in Fig. 1.2. Why have the meters been rearranged? Connect to Blue and Red Terminals of PowerSupply to give 30V range. Use the TENMA DMM to measure the current (A Range).
Forward Bias Reverse Bias

VF [V] 0.05 0.1 0.15 0.2

IF [mA]

1 2 3 4 5 6 7 8 9 10

VR [V] 1 2 3 4 5 6 7 8 9 10 15 20 25 30

IR [A]

Table 1. 1 Germanium Diode Measurements.

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Electronic Fundamentals Laboratory

Semester 2

Figure 1. 2 Circuit for Obtaining Reverse Diode Characteristic

1.6.

Reverse-Bias Measurements

Perform the measurements according to the right half of Table 1.1(Reverse Bias). To apply the higher voltages, use Blue and Red terminals of the Regulated Power Supply. Pay special attention to the Meter ranges. Record your results in the table.

1.7.

Silicon Diode

Switch off the Power-Supply. Reassemble the circuit shown in Fig.1.1 with the Silicon Diode, IN4001 in place of the Germanium one. A silicon diode has a band at the cathode end. Repeat the measurements of paragraphs 1.4 and 1.5 using the silicon diode, recording your results. Again reverse polarity, measure and record in Table 1.2. VF [V] 0.2 0.3 0.4 0.5 Forward Bias IF [mA] VR [V] 1 2 3 4 5 6 7 8 9 10 15 20 25 30 Reverse Bias IR [A]

1 2 3 4 5 6 7 8 9 10

Table 1. 2 Silicon Diode Measurements

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Electronic Fundamentals Laboratory

Semester 2

1.8.

Analysis of Results

Plot both sets of results on the same graph, with IF going from 0 to 10mA, VF from 0 to 2V, IR from 0 to -50A and VR from 0 to 30V. (You may alter any of the dimensions if they dont suit your results). Label your graph carefully and write each diode type next to its characteristic.

1.9.

Conclusions

In your own words, state what conclusions you draw from the experiment. Finally: (from experience!) Write your name on your lab notebook

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