Scribd
Upload
49 views36 pages

Lecture 6 Eric Small

Npn transistor consists of a thin layer of p-type material between two layers of n-type material. In most cases the base-emitter junction is forward biased and the base-collector junction is reverse biased.

Uploaded by

mukesh.33
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
49 views36 pages

Lecture 6 Eric Small

Npn transistor consists of a thin layer of p-type material between two layers of n-type material. In most cases the base-emitter junction is forward biased and the base-collector junction is reverse biased.

Uploaded by

mukesh.33
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 36

Lecture 6

Introduction to Bipolar Transistors Q point analysis DC Operating point analysis and modeling

Some Resources
Semiconductor Applets http://jas.eng.buffalo.edu/
Marc E. Herniter: Schematic Capture with Cadence PSpice (2nd Edition)

NPN Bipolar Junction Transistor


An npn BJT consists of a thin layer of p-type material between two layers of n-type material as shown in the figure.

The npn BJT. Lecture 5 EE171

In most cases the base-emitter junction is forward biased and the base-collector junction is reverse biased (active region).

Lecture 5

An npn transistor with variable biasing sources (common-emitter configuration). EE171

The emitter is heavily doped compared with the base. Most of the current is due to electrons moving from the emitter. Base current consists of holes crossing from the base into the emitter and of holes that recombine with electrons in the base.

Lecture 5

EE171

Common-Emitter Characteristics
Input characteristic is similar to the forward bias characteristic of a pn junction. In the output characteristics, the collector current is independent of VCE.

Common-emitter characteristics of a typical npn BJT. Lecture 5 EE171

Secondary Effects
Base-width Modulation Collector Breakdown Leakage Current

Lecture 5

EE171

Base-width Modulation:
As VCE gets larger, depletion region of collector extends farther into the base. This means less recombination at the base and hence less base current. In case of a constant base current, the emitter current should increase to maintain this constant base current. That is why in reality, collector current would increase with increasing VCE (next slide).

Lecture 5

EE171

Early Voltage:
The straight line extension of collector current curves all meet at a point on the negative VCE axis. The voltage amplitude at the intersection is called the Early voltage.

Common-emitter characteristics displaying exaggerated secondary effects.


Lecture 5 EE171

Collector Breakdown:
There are two main reasons for collector breakdown: -Avalanche Breakdown -Punch-through

Lecture 5

EE171

Leakage Current
The reason for this current is reverse leakage current of the collector junction. At room temperature, the leakage current is extremely small, but, as the temperature increases so does the leakage current.

Lecture 5

EE171

Load-line analysis

Load-line analysis of the amplifier

Lecture 5

EE171

Lets study Example 4.2 of the book to understand the analysis.

Load-line analysis for Example 4.2.

Lecture 5

EE171

Load-line analysis for Example 4.2.

Lecture 5

EE171

Input-output waveforms

Voltage waveforms for the amplifier of Example 4.2.

Lecture 5

EE171

Lets study Example 4.2 of the book to understand the analysis.

Load-line analysis for Example 4.2.

Lecture 5

EE171

Load-line analysis for Example 4.2.

Lecture 5

EE171

Distortion
Distortion occurs in BJT amplifiers due to nonlinearity of the input characteristic and non-uniform spacing of the output characteristic.

Output of the amplifier of Example 4.2 for vin (t) = 1.2 sin(2000p t) showing gross distortion. Lecture 5 EE171

Clipping occurs if the BJT swing reaches saturation or cutoff.

Amplification occurs in the active region. Clipping occurs when the instantaneous operating point enters saturation or cutoff. In saturation, vCE < 0.2 V. Lecture 5 EE171

You might also like