CONTENTS

POWER DEVICES and IGBT Variation of NIECs IGBT Modules Ratings and Characteristics Power Loss and Thermal Design Gate Drive High Side Drive 3-Phase Bridge Inverter Short circuit and Over-voltage Protection Snubber Parallel Operation

2 4 6 10 20 24 26 30 33 36

May, 2005 S.Hashizume Rev. 1.01

POWER DEVICES and IGBT

Diode is a fundamental semiconductor. Based on diode, switching characteristics of Thyristor, Bipolar Transistor, MOSFET, and IGBT are illustrated.

DIODE
i E i v vF

Anode

Cathode
E -E v vF -E

THYRISTOR (SCR)
Anode
E i i

Gate Cathode
iG

E vT iG

Thyristor can be switched on by DC or pulse gate current. But, it cannot be turned off by gate signal.

TRANSISTOR (NPN)
Collector
E iC iC

Base Emitter

vCE iB

E vCE(sat)

Transistor can be turned on during the period when base current is supplied.

iB

POWER DEVICES and IGBT

MOSFET (Nch)
iD iD E

Drain

vDS

vGS iG

vDS(on)

Gate Source
iD -E

vGS

iG iD (=-IS) iS

MOSFET can be turned on during the period when gate voltage is applied. Gate current flows only for a short period at turn-on and at turn-off. Between Drain and Source, diode is built-in on chip, and its current runs opposite to drain current.

IGBT
Collecter
iC

iC

Gate Emitter

vCE iG

vGE

E vCE(sat)

vGE

Equivalent circuit
iG

IGBT, same as MOSFET, can be turned on during the period when gate voltage is applied, and gate current flows also only for a short period at turn-on and at turn-off. However, diode is not integrated on chip. In some IGBT Modules, discrete diode are assembled in the package.

VARIATION of NIECs IGBT Modules

PHMB

Single

Example : PHMB400B12

PDMB

Example : PDMB100B12C
Doubler, 2 in 1

PBMB

Example : PBMB100B12C
Single-phase bridge, 4 in 1

PTMB

Example : PTMB100B12C
3-phase bridge, 6 in 1

VARIATION of NIECs IGBT Module

PCHMB
Suffix A

Example : PCHMB100B12

PRHMB( PRHMB(-A), PRFMB

Suffix A *1

Example : PRHMB400B12
*1 : PRFMB for 600V E-series

PVD

Example : PVD150-12

Example : PVD30-8

Ratings and Characteristics

For example, ratings and characteristics of PDMB100B12 are discussed here.

MAXIMUN RATINGS Tc=25 Item Collector-Emitter Voltage Gate-Emitter Voltage Symbol VCES VGES Rated Value 1200 20 Unit V V

An excessive stress over these ratings may immediately damage device, or degrade reliability. Designers should always follow these ratings.
C G E C G E

Maximum collector-emitter voltage with gate-emitter shorted

Maximum gate-emitter voltage with collector-emitter shorted

Collector Current

DC 1ms

IC ICP PC

100 200

A A

Collector Power Dissipation

500

Maximum DC or pulse collector current Maximum power dissipation per IGBT element. This module (PDMB100B12) has two IGBT elements, so this value is effective for each of two elements.
Junction Temperature Storage Temperature Tj Tstg 40 150 40 125

Chip temperature range during continuous operation Storage or transportation temperature range with no electrical load

Ratings and Characteristics

Isolation Voltage (Terminal to Base, AC, 1minute)

VISO Ftor

2,500 3 (30.6) 2 (20.4)

V Nm (kgf cm)

Mounting Torque

Module Base to Heatsink Busbar to Main Terminal

Maximum voltage between any terminal and base, with all terminals shorted Maximum mounting torque, using specified screws

ELECTRICAL CHARACTERISTICS Tc=25 (Per one IGBT Characteristics Collector-Emitter Cut-off Current Gate-Emitter Leakage Current Symbol ICES IGES Test Condition VCE=1200V, VGS=0V VGS=20V, VCE=0V Min. Typ. Max. 2.0 1.0 Unit mA A

C G E C G E
Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage VCE(sat) VGE(th) IC=100A, VGS=15V VCE=5V, IC=100mA 4.0 1.9 2.4 8.0 V V

Collector leakage current, with gate-emitter shorted

Gate leakage current, with collector-emitter shorted

C G 15V E C G 100mA E 5V 100A

A measure of IGBT steady-state power dissipation, which refers to forward voltage of diode, onstate voltage of SCR, or on-resistance of MOSFET.

Gate-emitter voltage when IGBT starts to conduct

Ratings and Characteristics

Input Capacitance

Cies

VCE=10V, VGE=0V, f=1MHz

8,300

pF

Gate-emitter capacitance, with collector-emitter shorted in AC

Switching Time

Rise Time Turn-on Time Fall Time Turn-off Time

tr ton tf toff

VCE=600V, RL=6, RG=10 VGE=15V

0.25 0.40 0.25 0.80

0.45 0.70 0.35 1.10

Definition of switching times

6 C +15V G 600V E

15V

PDMB100B12 Maximum
td(on) (0.25s) tr 0.45s ton 0.70s td(off) (0.75s) tf 0.35s toff 1.1s

MAXIMUN RATINGS AND ELECTRICAL CHARACTERISTICS OF FWD Tc=25 Forward Current DC 1ms

IF IFM

100 200

A A

Maximum DC or pulse forward current of built-in diode

Ratings and Characteristics

Characteristics Forward Voltage Reverse Recovery Time

Symbol VF trr

Test Condition IF=100A, VGE=0V IF=100A, VGE=10V di/dt = 200A/s

Min.

Typ. 1.9 0.2

Max. 2.4 0.3

Unit V s

Forward voltage of built-in diode at specified current

Required time for built-in diode to recover reverse blocking state

Reverse Current

Definition of reverse recovery time

THERMAL CHARACTERISTICS Characteristics Symbol IGBT Diode

Condition

Min.

Typ.

Max. 0.24 0.42

Unit

Thermal Resistance

Rth(j-c) Junction to Case

/W

Thermal resistance of each of IGBT or built-in diode

Measuring point of Case temperature Junction temperature

IGBT
0.24/W Case temperature 0.24/W

Diode
0.42/W 0.42/W

* Measuring point is at the center of metal base plate. * Thermo-couple is inserted into a hole of 1mm in diameter and 5mm in depth. To define Rth(j-c), Tc is measured at metal base plate just below IGBT or diode chip.

Contact thermal resistance Heatsink temperature Heatsink thermal resistance Ambient temperature

Power Loss and Thermal design

Power loss in IGBT consists of steady-state (conduction) loss and switching loss. And, switching loss is sum of turn-on loss (Eon) and turn-off loss (Eoff) Also, thats of builtin diode is sum of steady state and switching (ERR - reverse recovery). You can calculate average loss by multiplying EON, EOFF, ERR times switching frequency.

IGBT Losses

Collector current

IC

Collector-Emitter Voltage VCE(sat)

Turn-on EON

Steady State

Turn-off EOFF

Collector Loss ICVCE(sat)

Reverse Recovery Loss

Current Voltage

Reverse Recovery Loss ERR

10

Power Loss and Thermal Design

Measuring switching characteristics

RG 15V iC VCC RG
iC

+15V 15V

time

PDMB100B12 Typical Tun-on and EON

3 2 1 300 250 900 750 30 20 Turn-On / 100A/1.2kV/SPT at VCC=600V, IC=100A, RG=10, VGE=15V, TC=125

VGE -IG IC VCE

-5

VCE (V)

150 100 50 0

450 300 150 0

VGE (V)

IG (A)

200

600

10 0 -10 -20 -30

5.4x10 5.6x10
-5

-1 -2 -3

IC (A)

t : 2 . 0 s/ DIV
-5

5.8x10

6x10

-5

6.2x10

-5

Time (s)
0.02 1.0x10
5 4 4 4 0
-5

ESW (J)

P (W)

0.015 0.01 0.005 0

7.5x10 5.0x10 2.5x10 0.0x10

EON
t : 2 . 0 s/ DIV

5.4x10

5.6x10

-5

5.8x10

-5

6x10

-5

6.2x10

-5

PDMB100B12 Typical Tun-off and EOFF

3 2 1 300 250 200 900 750 600 30 20 10

Time (s)

Turn-Off / 100A /1.2kV /SPT at VCC=600V, IC=100A, RG=10, VGE=15V, TC=125

VCE -IG VGE IC

-6

0 -1 -2 -3

VCE (V)

150 100 50 0

450 300 150 0

VGE (V)

IG (A)

IC (A)

0 -10 -20 -30

-2x10 -1x10
-6

t : 1 . 0 s/ DIV
1x10
-6

0x10

-6

2x10

-6

3x10

-6

4x10

-6

5x10

-6

Time (s)
0.02 1.0x10
5 4 4 4

ESW (J)

P (W)

0.015 0.01 0.005 0

7.5x10 5.0x10 2.5x10

EOFF
t : 1 . 0 s/ DIV

0.0
-2x10
-6

-1x10

-6

0x10

-6

1x10

-6

2x10

-6

3x10

-6

4x10

-6

5x10

-6

Time (s)

11

Power Loss and Thermal Design

1200V B-series Turn-on Loss EON Tj= 125

Find RG (gate series resistance) on Datasheet. VCC=600V Tj=125 VGE=15V Half Bridge

1200V B-series Turn-off Loss EOFF Tj= 125

Find RG (gate series resistance) on Datasheet. VCC=600V Tj=125 VGE=15V Half Bridge

12

Power Loss and Thermal Design

1200V B-series Dependence of RG on EON Tj= 125

VCC=600V IC=Rated IC Tj=125 VGE=15V Half Bridge

1200V B-series Dependence of RG on EOFF Tj= 125

VCC=600V IC=Rated IC Tj=125 VGE=15V Half Bridge

13

Power Loss and Thermal Design

1200V B-series Diode Reverse Recovery Loss ERR Tj= 125

Find RG (gate series resistance) on Datasheet. VCC=600V Tj=125 VGE=15V Half Bridge

1200V B-series Dependence of RG on ERR Tj= 125

VCC=600V IC=Rated IC Tj=125 VGE=15V Half Bridge

14

Power Loss and Thermal Design

Losses in IGBT Module

IGBT Steady-State Loss Switching LossesTurn-on Loss EON, Turn-off Loss (EOFF FWD Steady-State Loss Switching (Reverse Recovery) Loss ERR

IGBT

FWD

Calculation of Average Loss in a Chopper circuit

IGBT IGBT

Vcc

RG

FWD FWD

3:

1: An example of average loss calculation PRHMB100B12Vcc=600VIc=100ARG=10VGE=15Vf=10kHzDuty:3:1

IGBT Steady-state Loss : 100(A)2.2*1(V)3/4160(W) Turn-on Loss : 9.5(mJ)10(kHz)95(W) Turn-off Loss : 9.5(mJ)10(kHz)95(W) IGBT Loss in total : 350(W) FWD Steady-state Loss : 100(A)1.9*2(V)1/447.5(W) Switching (Reverse Recovery) Loss : 8.5(mJ)10(kHz)85(W) FWD Loss in total : 132.5(W)

Module Loss 482.5(W) *1 Collector-Emitter saturation voltage @ Ic=100A, TJ=125 *2 Forward voltage @ IF=100A, TJ=125

15

Dissipation and Thermal Design

Calculations follow the condition on previous page.

Junction to Case Temperature Rise

FWD IGBT
Rth(j-c)=0.24/W Rth(j-c)=0.42/W

Temperature Difference between Tc and Tj

IGBT 84 (3500.24) FWD 55.65 (132.50.42)

Case temperature Tc

Case to Fin, and Case to Ambient Temperature Rise

Contact thermal resistance Rth(c-f) Fin thermal resistance Rth(f-a)

Case temperature Tc

5mm

Fin temperature Tf

Ambient temperature Ta

Temperature difference between Tc and Tf, and between Tf and Ta TcTf TfTa Rth(c-f)482.5 Rth(f-a)482.5

16

Dissipation and Thermal Design

Loss and Temperature Rise in 3-phase Inverter

We cannot easily estimate losses for applications which have sophisticated operating waveform, such as PWM inverter. In these cases, we recommend directly measure losses, using DSO. (Digital Storage Oscilloscope) which features computerized operation. (For example, Tektronix introduces TDSPWR3 software to analyze complicated losses.) For choice of heatsink, an example how to evaluate losses is shown below. EXAMPLE PTMB75B12C, Inverter output current (IOP) 75A, Control Factor (m) 1, Switching frequency (f) 15kHz, Power factor cos 0.85

IGBT

FWD

IGBT

FWD

IGBT

FWD

IGBT

FWD

IGBT

FWD

IGBT

FWD

Lets review losses in IGBT module. Losses in IGBT are sum of steady-state (conduction) loss Psat, turn-on loss PON, and turn-off loss POFF. And, losses in FWD are sum of steady-state loss PF and reverse recovery loss PRR. Psat

IOP sinVCE(sat) sin(1m sin( + )/2 d 2

0

IOP VCE(sat)

1 8

m 3

cos

Given IOP75A, VCE(sat) 2.2V (125), m1, cos0.85, Psat35.5(W) PF=

(-IOP sin)(VF sin)(1m sin( + )/2 d 2

0

= IOP VF

1 8

m 3

cos

VF of FWD is 1.8V @75A125; PF=4.7W Referring datasheet, we know turn-on loss, turn-off loss, and reverse recovery loss per pulse are 7.5mJ7mJand 6mJ, respectively. Multiplying frequency (15kHz) and 1/, we after all have average losses. EON35.8(W)EOFF33.4(W)ERR28.6(W) *1

sin d 2
0

17

Dissipation and Thermal Design

Loss and Temperature Rise in 3-phase Inverter (Continued)

Loss per IGBT and FWD

Average Loss per IGBT 104.7W Average Loss per FWD 33.3W

(Psat+PON+POFF)

(PF+PRR)

Loss in each element

Total Loss 828W

Temperature Rise of each element

IGBT
Rth(j-c)=0.3/W T(j-c)31.4

FWD
Rth(j-c)=0.6/W T(j-c)20.0

18

Dissipation and Thermal Design

Junction to Case Transient Temperature Rise

On previous page, the temperature rise is average (steady-state) value. Using transient thermal resistance, you can calculate peak temperature, when necessary.

P t1 t3 t2

T(j-c) = P(t1/t3){Rth(j-c)rth(t3+t1)}P(rth(t3+t1)rth(t3)rth(t1)} rth(t) is transient thermal resistance at time t

Check which is the highest temperature among IGBT elements, and consider transient temperature variation over average temperature.

19

Gate Drive
Rated (Maximum) Gate Drive Voltage
Gate Emitter Gate voltage range should be within 20V Exceeding this rating may destroy gate-emitter oxide SiO2, or degrade reliability of IGBT.

n+

p n n+ p+

n+

SiO2

Zener Diode (18V or so) to absorb surge voltage Collector

On-Gate Drive Voltage

IC=100A (VCE=600V) VGE VCE(on) PC 8V (600V) (60,000W) 10V 2.25V 225W 12V 2.05V 205W 15V 1.95V 195W

Lower gate voltages, such as 12V or 10V, cause an increase in collector loss. Lower voltage as low as 6V cannot lead IGBT to be on-state, and collectoremitter voltage maintains near supply voltage. Once such a low voltage is applied to gate, IGBT may possibly be destroyed due to excessive loss.

Standard On Gate Drive Voltage is +15V.

Reverse Gate Bias Voltage during Off-period - VGE

VGE RG To avoid miss-firing, apply reverse gate bias of (-5V) to -15V during off-period.

VGE (-5V) -15V Standard : -15V

20

Gate Drive

Dependence of on-gate voltage and off-gate bias on switching speed and noise
Increase in on-gate voltage (+VGE) results in faster turn-on, and turn-on loss becomes lower. It follows additional switching noise. As a matter of course, higher off-gate voltage (VGE) causes higher turn-off speed and lower turnoff loss. As expected, it follows higher turn-off surge voltage and switching noise. RG, +VGE, and -VGE are major factors which significantly affect switching speed of IGBT.

VGE RG

VGE

Effect of gate resistance RG on switching

RG

Gate Capacitance
Gate Emitter
CGC CGE CGC CCE

Collector
CCE CGE

Gate

Emitter Input Capacitance Cies = Cge + Cgc Reverse Transfer Capacitance Cres = Cgc Output Capacitance Coes = Cce + Cgc

Collector

21

Gate Drive

Gate Reverse Bias Voltage and Gate-Emitter Resistance RGE

RG 15V
Displacement current

+15V

RG High dv/dt

15V Bypass resistance RGE 10k or larger

Displacement current flows due to high dv/dt, and gate voltage rises.

Inrush current due to reverse recovery of FWD and high dv/dt

IC

Reverse gate bias and bypass resistance surpress inrush current and accompanied loss.

Gate Wiring
To be free from harmful oscillation, be sure to confirm following points.

Minimize loop area

Twist

*Set gate wiring as far as possible from power wiring, and do not set parallel to it. *If crossing is inevitable, cross in right angles. *Do not bundle gate wiring pairs. *Additional common mode inductor or ferrite bead to gate wiring is sometimes effective.

22

Gate Drive

Using Gate Charge to estimete Drive Current and Power

RL VGE RG iG VGE
CGE CGC CGE+CGC
15V

VCE

CGC

Gate Drive Dissipation PG, Peak Gate Drive Current iGP +VGE=15V-VGE=-15Vf=10kHz

CGE

690nC

PG=+VGE--VGE)Qgf 3069010-9104 0.207 (W)

Assuming turn-on time is 500ns ; iGP = Qg / ton 69010-9 / 50010-9 1.4 (A)

23

High Side Drive

High Side and Low Side
V+ IGBT is driven referred to emitter voltage. During switching operation, emitter voltage of high side IGBT VE swings from 0V to bus voltage V+. So, required gate drive voltage for high side IGBT in AC200V circuit is as high as 300V (bus voltage) plus 15V, 315V. Consequently, we need high side drive circuit not influenced by switching operation.

High Side VE Low Side LOAD

High Side Emitter Voltage VE

V+

High Side Gate Voltage

V+ plus 15V

Optocoupler or high voltage driver IC is usable solution these days.

High Side Drive Using Optocoupler

+VGE

IN

-VGE

For high power applications, optocoupler is utilized for isolation, and, discrete buffer is added as output stage. For medium or less power applications, hybrid IC integrated in a package illustrated on the left is a popular choice.

* Use high common mode rejection (CMR) type. * To minimize dead time so as to decrease IGBT loss, use one with shortest transfer delay times, tPLH and tPHL. tPLH and tPHL are differences in delay time for output changes from L to H, or L to H, referred to input, respectively. * Major suppliers are Toshiba, Agilent Technologies, Sharp, NEC, and etc. * Application note of Agilent Technologies indicates that optocoupler ICs are recommended to 200VAC motor driver of 30kW or less (600V IGBT), and to 400VAC driver of 15kW or less (1,200V IGBT). For higher power applications, discrete optocoupler plus buffer is used as gate driver.)

24

High Side Drive

High Side Drive using Driver IC

Bootstrap diode Bootstrap capacitor

Vcc IN COM

Available line-ups are; High side Half bridge High and Low 3-phase bridge Many have rating of 600V, while some have of 1200V.

* Bootstrap diode should be fast recovery type, and its VRRM should be same as VCES of IGBT. * For bootstrap capacitor, use high frequency capacitor, such as film or ceramic, or add it in parallel. * Reduce line impedance of Vcc as small as possible.

Optocoupler vs. Driver IC

Comparison between the two are as follows.

Optocoupler Application Technique Structure AC400V line Typical Vcc current Dead time Assembly area Protection Inverter output Improvements 10mA More than 2s Large Built-in some Relatively easy Hybrid

Driver IC Relatively not easy Monolithic Tough on use Less than 2mA Less than 1s is available Small Plus current sensing Especially useful for 3phase 2.23.7kW

Drive capability, Protection, Noise margin, Less difference in characteristics, Integrated current-sensing, etc

25

3-Phase Inverter
3-phase Induction Motor Driver and Output Timing Chart
Inrush current Protection

TrU R S T

TrV

TrW U V M

TrX

TrY

TrZ

Over current sensing DC-DC Converter

U V W X,Y,Z

Gate Driver

Protection

CPU & Logic

TrU

TrV

TrW

TrX

TrY

TrZ
0 120 240 0 120 240 0 120 240 0 120 240 0

26

3-Phase Inverter

AC line Voltage and Corresponding IGBT Rated VCES

AC Line Voltage IGBT VCES 200240V 600V 400480V 1200V 575, 690V 1700V

Motor Output and IGBT Rated IC (3-phase bridge

IAC=P / (3VACcos) IAC : Motor Drive Current (ARMS) P 3-phase Motor Output (W) VAC Rated Voltage (VRMS) cos Power Factor : Efficiency Assuming power factor is 0.8, and efficiency is 70%, IAC=P / (0.970VAC) IC = 2IAC1.11.1Kg1.3
Temperature Derating Derating for short period overload : 1.2 Derating for distortion in output current Derating for line voltage fluctuation

AC200V applications AC400V applications 3-phase Motor Output 3.7kW 5.5kW 7.5kW 15kW 30kW 45kW 55kW

IC = 0.0138P IC = 0.00688P AC400V IC of 1,200V IGBT 25A (25.5A) 50A (51.0A) 100A (103.5A) 200A (207A) 300A (309.6A) 400A (379.5A) : Calculated Value

AC200V IC of 600V IGBT 50A (51.0A) 75A (75.9A) 100A (103.5A) 200A (207A) 400A (414A) 600A (621A)

27

3-Phase Inverter

An example of AC200V 3-phase 2.2kW Inverter Circuit

Shown below is an example for study, and not for practical use. It is referred to March, 1999 issue of Transistor Gijutsu under approval of the author, Mr. Hajime Choshidani. Original is designed for 0.75kW output, and is partially modified for 2.2kW output.
+5V 91 TLP620 1 2 0.022F 4 3 100p 74HC14 CPU

PGH508

91 0.1F

910

PTMB50E6(C)
0.1 10W 3 20

TrU
1ZB18

20

TrV
1ZB18

20

TrW
1ZB18

R S T

15k 560F2 (3) 400WV

15k

C*

C*

15k

C*

20

TrX
1ZB18

20

TrY
1ZB18

U V W

20

TrZ
1ZB18

15k

15k

15k

C* : 0.10.22F 630V
+15V

Insulated DC-DC Converter

+5V

+15V +15V +15V 0.1 Gate Emitter 0.1 Gate Emitter 0.1 Gate Emitter 0.1 Gate Emitter 0.1 0.1 Gate Emitter

360

1 2 3 4 1 2 3 4 1 2 3 4 1 2 3 4 1 2 3 4 1 2 3 4

8 7 6 5 8 7 6 5 8 7 6 5 8 7 6 5 8 7 6 5 8 7 6 5

TLP250

TrU

10 0.1

47k6

100

0.1

360

TLP250

TrV

U V W X Y Z
74HC04 360 360

TLP250

CPU

TrW

360

TLP250 TLP250 TLP250

TrX

TrY

360

TrZ

74HC06

28

3-Phase Inverter

Designing 3-phase Inverter using Driver IC

Design note how to apply 600V 3-phase driver IC IR2137 and current sensing IC IR2171 to 2.2kW inverter is available from International Rectifier (IR). http://www.irf-japan.com/technical-info/designtp/jpmotorinv.pdf Also, you can buy the design kit IRMDAC4 from IR. http://www.irf.com/technical-info/designtp/irmdac4.pdf These are very helpful to know driver IC.

Noise Filter

Capacitor

IR2137

IGBT Module IR2171

Design kit using driver IC IR2137 and current sensing IC IR2171 International Rectifier

29

Short-circuit and Over-voltage Protection

Flow to protect short-circuit and over-voltage Abnormal happens.
Why happened?

Over-current flows.

Monitor the current Where? By what? Or monitor C-E voltage.

Over the design criteria?

Shut down IGBT within 10s (Unless the IGBT will be failed.

C-E voltage and turn-off loss increases due to overcurrent

Soft turnoff and proper snubber are required.

Short Circuit1.2kV/ 100A /SPT VCC=900V, t=10s, TC=125, RG=24, L=50nH
4.8x10
6

1500 1250 1000 750 500 250 0

1500 1250 1000

30 20 10

4x10 6 3.2x10
6

2.4x10 1.6x10

VCE (V)

750 500 250 0

VGE (V)

VCE IC

P (W)

IC (A)

0 -10 -20 -30

VGE PC
0x10 -6 5x10 -6 10x10 -6 15x10 -6 20x10 -6

8x10 5 0x10 0

-5x10 -6

Time (s)

10s short circuit SOA operation without additional protectiive devices. 30

Short-circuit and Over-voltage Protection

Causes and Sensing of short-citcuit current

Causes INVERTER Device or Controller failure, Case isolation LOAD Load failure, Arm short-circuit, Ground fault Current Sensors Current Transformer CT AC, DC, or HF type Shunt Resistor Current Sensing IC

Arm short-circuit due to device failure or to controller failure (Insufficient dead-time)

TrU R S T TrV TrX TrY TrZ TrW U V M W

Short-circuit current due to series arm

TrU R S T TrV TrX TrY TrZ TrW U V M W

Short-circuit current due to ground fault Through or path

TrU R S T TrV TrX TrY TrZ TrW U V M W

31

Short-circuit and Over-voltage Protection

Collector-Emitter Surge Voltage during turn-off of short-circuit current

RG 10 15k 18V ZD

Stray inductance Ls

In the event of arm (load) short-circuit, current is so large because it is only limited by ESR of electrolyte capacitor and gain of IGBT. Corresponding loss is also large, and IGBT will fail unless it is not turned-off within 10s. Simultaneously, it followed by surge voltage (inductive voltage kick), and which is the product of collector-emitter stray inductance Ls and -di/dt. Assuming Ls is so small as 0.1H, the voltage reaches as high as 200V if -di/dt is 2,000A/s. To reduce -di/dt, IGBT should be turned-off slowly. In addition to soft turn-off, stray inductance should be minimized as small as possible During transition from on-state to off-state, collector voltage rises. As a result, gate is charged up through reverse transfer capacitance Cgc. Given this situation, collector current is increased more and more, and gate is possibly destroyed. We recommend addition of both bypass resistor and zener diode between gate and emitter terminals.

Collector Current IC

IC

-dic/dt

VLs-dic/dt Collector-Emitter Voltage VCE IGBT may be destroyed by the voltage spike which exceeds C-E voltage rating.

32

Short-circuit and Over-voltage Protection

Snubber
At turn-off, stored energy in inductance generates surge voltage, which is applied to collector-emitter of IGBT. As snubber capacitor is responsible for a part of turn-off energy, snubber circuit can suppress over-voltage and incidental turn-off loss. As a matter of course, stacked up energy in capacitor should be dissipated properly.

RCD Snubber
Stored energy at turn-off : 1/2LiC2

iC

e+ LdiC/dt

IGBT

diC/dt

iC

L + iC E IGBT

iS Cs e iC iS

Assuming all the energy in L is transferred to Cs, 1/2LiC21/2Cse2 So, e i0L/Cs

L +

iton

Discharge current limiting resistor

Discharge current of Cs iC

IGBT

iC Cs

Charge during turn-off.

Discharge during turn-on.

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Short-circuit and Over-voltage Protection

Loss in RCD Snubber

L iC Rs Cs Ds
diC/dt

vs e vCE

Snubbers individually connected to each IGBT are more effective than ones between DC bus and ground. But, we have a difficulty that loss in Rs is large. Loss in Rs is Lic2 times switching frequency, for example, the loss is 20W, assumed L=0.2H, ic=100A, and f=10kHz. In this case, total snubber loss reaches as high as 120W in 3-phase circuit. So, our choice is to set frequency lower, or, to regenerate the energy. To reduce e, minimize stray inductance in main circuit loop at first, so we will have a smaller Cs in accordance to the reduced inductance. The vs is the sum of (dic/dt)(stray inductance of wiring), forward recovery voltage of Ds, and dic/dt (stray inductance of Cs). Considerations on snubber are; *Drive IGBT in lower -dic/dt. (Turn-off IGBT slowly.) *Place electrolytic capacitors as close to IGBT module as possible, apply copper bars to wiring, and laminate them where possible, so as to minimize wiring inductance of main circuit *Also, set snubber as close to IGBT module as possible, use high frequency oriented capacitors, such as film capacitors. *Use low forward recovery, fast and soft reverse recovery diode as Ds.

Popular Snubbers
Shown are lump snubbers (between power buss and ground).

Snubber1

Snubber2

Snubber3

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Short-circuit and Over-voltage Protection

Guideline of Snubber Capacitance

Snubber1 on previous page cuts damping resistor, and sometimes oscillations occur on power buss. So, it is fit for lower power applications. Among 3 types of snubbers, you will find which is the generic choice, and capacitance for lump snubber below. Half of the capacitance is right value when snubber is attached to each IGBT.

IGBT IC

10A

50A 0.47F

100A

200A

300A

400A

1.52F Snubber Snubber1 or 2 Snubber3 or 2

3.34.7F Snubber3 and 1

In highest power applications, snubbers would be not enough to be free from device failure or malfunction due to noise otherwise wiring inductance could be minimized using copper bars or laminated them.

Discharge Surpressing Snubber (Snubber3)

L Cs Rs

Cs

Rs

Assuming all of the stored energy in L is absorbed by Cs, 1/2LiC21/2Cse2 Thus, CsL(iC/e)2 Charge in Cs must be fully discharged before the next turn-on, and we focus on time constant (CsRs). To discharge below 90%; Rs1/(2.3Cs f) f : switching frequency This relationship indicates minimum value of Rs. In addition, an excessively small Rs may result in harmful oscillation at turn-on, so, somewhat larger resistance would be preferable. Dissipation in Rs, P(Rs), is independent of Rs. P(Rs)1/2LiC2

35

Parallel Operation
Parallel Operation and Current Imbalance
We introduce high current IGBT modules, which extend to 1,200A for 600V series, and 800A for 1,200V series. So, we cover up to 100kW 3-phase inverters. Consequently, parallel operation of IGBT modules is not so important, but, when designing 3-phase inverters, information on rules for parallel operation may possibly be useful. Let us show you the points in brief.
Ic1 Ic2

Lc1 Gate Driver IGBT-1 RG RG

Lc2

IGBT-2

L E1

L E2

Current sharing during parallel operation depends on both circuit design and device characteristics. Oscillations caused by gate-emitter wiring inductance LGresistance RGand Cies, will possibly be the origin of device failures as a result of malfunction or non-saturation of IGBT. Minimal RG required is in proportion to LG. Accordingly, minimize the inductance, and RG should also be larger than or equal to recommended.

Ic2 Ic1 (Lc1LE1) (Lc2LE2) VCE(sat)1VCE(sat)2

Turn-on

Steady-state

Turn-off

*Differences in wiring inductance lead to poor current sharing at turn-on or at turnoff. Collector and emitter wiring to each IGBT should be equal and minimal. *Each IGBT needs gate resistor, and gate wirings should also be equal and minimal. Connect emitter wiring to auxiliary emitter terminal, not to main emitter terminal. *Saturation voltage VCE(sat) and some other characteristics are depend on temperature. Obtain smallest possible deference in temperature rises among modules.

36

Parallel Operation

VCE(sat) Rank for Parallel Operation

Some current imbalance in parallel operation is inescapable, and handling current per module is roughly decreased to 80%. For example, expected total current of 4 300A modules in parallel is 3000.84=960A. On your request, we can ship VCE(sat) ranked modules for larger than 1,200A/600V or 800A/1200V applications. Contact us for further information. For your repeat order when repair is needed, we ship group of modules in a VCE(sat) rank, but the rank may not be same as the original.

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