MICROWAVE INTERGRATED CIRCUITS
Huynh Phu Minh Cuong, PhD
[email protected]Department of Telecommunications Faculty of Electrical and Electronics Engineering Ho Chi Minh city University of Technology
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 1
MICROWAVE INTERGRATED CIRCUITS
Instructor: Cuong Huynh (PhD) Office: 112 B3 , HCMUT Office Hours: Friday 2:00-4:00 PM E-mail:
[email protected] Textbook: [1] David M. Pozar, Microwave Engineering, John Wiley & Sons, Inc, 4th ed., 2012. References: [2] Gonzalez, Microwave Transistor Amplifiers, Prentice Hall, 2nd ed. 1997 [3] I.D. Robertson, S. Lucyszyn, RFIC and MMIC Design and Technology, The Institution of Electrical Engineers, London, 2001 [4] V nh Thnh, Mch Siu Cao Tn, NXB HQG, 2006 [5] V nh Thnh, K Thut Siu Cao Tn, NXB HQG, 2004.
Dr. Cuong HuynhTelecommunications DepartmentHCMUT
MICROWAVE INTERGRATED CIRCUITS
Learning outcomes
Understand effects of noise and nonlinearity distortion on microwave systems and system parameters such as noise figure, input/output referred noise, 1-dB compression point and third-order intercept point. Analyze various microwave transceiver architectures and design system parameters for microwave transceivers. Analyze, design, fabricate and measure microwave passive components such as power divider/combiner, directional coupler, hybrid coupler, circulator and T/R switch. Analyze, design, fabricate and measure microwave filters using distributed elements. Analyze, design, fabricate and measure microwave amplifiers including low noise amplifier, broadband amplifier and power amplifier. Analyze, design, fabricate and measure microwave mixers and oscillators. Use microwave simulation soft-wares such as ADS, Cadence and SDH, and equipments such as network analyzer, spectrum analyzer, synthesizer and noise figure analyzer.
Dr. Cuong HuynhTelecommunications DepartmentHCMUT
MICROWAVE INTERGRATED CIRCUITS
Grading
Homework 20% You are encouraged to work together with your classmates on the homework. HW can be turned in via Email. No late homework will be graded
Final Project 30%
Report and PowerPoint presentation are required Final Exams 50% Closed book One single-sided A4 of notes is allowed
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Dr. Cuong HuynhTelecommunications DepartmentHCMUT
MICROWAVE INTERGRATED CIRCUITS
Outline
Chapter 1: Fundamentals of Microwave Engineering Chapter 2: System Parameters and Transceiver Architectures Chapter 3: Power Dividers and Directional Couplers Chapter 4: Microwave Amplifier Chapter 5: Oscillators and Mixers Chapter 6: Microwave Filters
Dr. Cuong HuynhTelecommunications DepartmentHCMUT
MICROWAVE INTERGRATED CIRCUITS
Chapter 1
Fundamentals of Microwave Engineering
Huynh Phu Minh Cuong
[email protected] Department of Telecommunications Faculty of Electrical and Electronics Engineering Ho Chi Minh city University of Technology
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Introduction
and emerging applications !
Integrated Circuits (IC)
Is the key driver behind the scene !
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Introduction
Dr. Cuong HuynhTelecommunications DepartmentHCMUT
Introduction
Dr. Cuong HuynhTelecommunications DepartmentHCMUT
Introduction
Dr. Cuong HuynhTelecommunications DepartmentHCMUT
Introduction
Dr. Cuong HuynhTelecommunications DepartmentHCMUT
Introduction
Dr. Cuong HuynhTelecommunications DepartmentHCMUT
Introduction
Dr. Cuong HuynhTelecommunications DepartmentHCMUT
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1.1 Fundamentals of microwave engineering
Transmission lines
V ( x) V .e . x V .e . x
V .l V .l I (l ) e e Z0 Z0
1 ( x ) Z ( x) Z0 1 ( x )
( l )
Z L Z0 Z L Z0
2 d
( x) (l ).e
Z L j.R0 .tg ( d ) Z ( x ) R0 R0 j.Z L .tg ( d )
1 1
VSWR
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1.1 Fundamentals of microwave engineering
Smith chart
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1.1 Fundamentals of microwave engineering
Impedance Matching
Using lump elements Using transmission line ADS Smith chart tool
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1.1 Fundamentals of microwave engineering
Scattering Parameters
At microwave regime: S-parameters matrix, defined in terms of traveling waves, is used instead. The scattering matrix represents the relation between the voltage incident waves on the ports to voltage reflected wave from the ports. S-parameters are measured with matched loads rather than open- or short-circuits. At microwave frequencies, matched loads are relatively easy to realize. S-parameters are measured using Vector Network Analyzer (VNA).
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S-Parametter Definition
V+n is the incident voltage wave on port n
V n is the reflected voltage wave from port n.
The scattering matrix, or [S] matrix, is defined in relation to these incident and reflected voltage waves.
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S-Parametter Definition
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Dr. Cuong HuynhTelecommunications DepartmentHCMUT
Dr. Cuong HuynhTelecommunications DepartmentHCMUT
Example: Find [S]
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1.2 Technology and device for microwave integrated circuits
Target: smaller size, lighter weight, lower power requirements, lower cost, and increased complexity. Microwave integrated circuits (MICs) Technology replace bulky and expensive waveguide and coaxial components with small and inexpensive planar components. MIC technology has advanced to the point where complete microwave subsystems, such as receiver front ends and radar transmit/receive modules, can be integrated on a chip that is only a few square millimeters in size.
Hybrid MICs MIC MMIC/RFIC
Hybrid Microwave Integrated Circuits Monolithic Microwave Integrated Circuits Radio Frequency Integrated Circuits
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1.2 Technology and device for microwave integrated circuits
Hybrid MICs
MMIC/RFIC
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1.2 Technology and device for microwave integrated circuits
Technology
CMOS
The metaloxidesemiconductor field-effect transistor (MOSFET) was first patented by Julius Edgar Lilienfeld in 1925, well before the invention of BJT. Due to the fabrication limitation, MOSFET has not been used until the early years of 1960s. CMOS (Complementary MOS p- and n-type device) was patented by Frank Wanlass in 1967, initiating a revolution in the semiconductor industry. CMOS initially dominates in the digital circuit/systems while others for analog. Why CMOS now ? Low cost, high integration and solution for SOC.
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1.2 Technology and device for microwave integrated circuits
CMOS Technology
CMOS Transistors Interconnect Diodes Resistors Capacitors Inductors Bipolar Transistors
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1.2 Technology and device for microwave integrated circuits
CMOS Technology
Intel 45 nm CMOS Process
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1.2 Technology and device for microwave integrated circuits
Microwave Devices
DIODES BIPOLAR JUNCTION TRANSISTORS FIELD EFFECT TRANSISTORS Capacitor Inductor
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1.2 Technology and device for microwave integrated circuits
Microwave devices
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1.2 Technology and device for microwave integrated circuits
NMOS Transistor
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1.2 Technology and device for microwave integrated circuits
PMOS Transistor
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1.2 Technology and device for microwave integrated circuits
Interconnect
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1.2 Technology and device for microwave integrated circuits
Diode
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1.2 Technology and device for microwave integrated circuits
Resistor
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1.2 Technology and device for microwave integrated circuits
Capacitor
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1.2 Technology and device for microwave integrated circuits
Inductor
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1.3 Microwave simulation tools
Circuit Simulator: EM simulator:
ADS, Cadence Momentum, HFSS,IE3D, CST, SONET
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