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Pspice Lab #3: DC Characteristics of A Bipolar Transistor (BJT)

The document describes three PSpice simulations of a bipolar junction transistor (BJT) to analyze its DC characteristics: 1. Plotting the IC-VCE characteristics curves for different base currents IB to determine the common-base current gain α and common-emitter current gain β. 2. Plotting IC versus IB and IC versus IC to determine the maximum current gain and corresponding IB and IC, and calculate α. 3. Plotting β versus IC at different temperatures to observe how β varies with temperature typically shown in transistor data sheets.

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83 views4 pages

Pspice Lab #3: DC Characteristics of A Bipolar Transistor (BJT)

The document describes three PSpice simulations of a bipolar junction transistor (BJT) to analyze its DC characteristics: 1. Plotting the IC-VCE characteristics curves for different base currents IB to determine the common-base current gain α and common-emitter current gain β. 2. Plotting IC versus IB and IC versus IC to determine the maximum current gain and corresponding IB and IC, and calculate α. 3. Plotting β versus IC at different temperatures to observe how β varies with temperature typically shown in transistor data sheets.

Uploaded by

sabitavabi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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PSPICE LAB #3

DC CHARACTERISTICS OF A BIPOLAR TRANSISTOR (BJT)

BASIC PROPERTIES Common base current gain is given by IC = IE Common-emitter current gain is given by IC == IE 1- And IE = I C I B !"e de#endence o$ IC on %CE can be accounted $or by assuming t"at saturation current IS remains constant and inc&uding t"e $actor '1 %CE(%A) in t"e e*#ression $or IC as $o&&o+s, %CE IC = IS ' 1 )e%BE(%! %A -"ere symbo&s "ave t"eir usua& meanings 'see #age ./10 1icroe&ectronics Circuits0 Sedra(Smit"0 /t" Edition)2 %A is t"e ear&y vo&tage2

Pspice Assignments A. BJT IC-VCE C !"!cte"istics C#"$es


-ire t"e circuit s"o+n in 3ig2 12 Se&ect An!%&sis and t"en set#p $rom t"e Sc"ematics menus0 and t"en C&ic4 t"e LEFT mouse button on t"e DC S'eep button2 Se&ect %CE $rom 5 to 6%2 !"e S'eep t&pe is &inear2 Set u# 7ested S+ee# $or IB $rom 521 mA to 526 mA2 1ar4 8 in t"e En!(%e Neste) S'eep2 9enerate t"ree curves $or IB = 521 mA0 523 mA and 526 mA2

Dete"mine !n) *"+m t e c#"$es *+" t e *+%%+'ing $!%#es +* IB !n) VCE, IB - ../mA !n) ..0mA !t VCE - /V !n) VCE - 1.0V.

%CE I:C IB

5 3ig2 1

B. DC C#""ent 2!in $e"s#s c+%%ect+" c#""ent IC !n) IB


Circuit $or t"is ana&ysis is s"o+n in 3ig2 12 Set %CE = 6%2 Se&ect An!%&sis and t"en set#p $rom t"e Sc"ematics menus0 and t"en c&ic4 t"e LEFT mouse button on t"e DC S'eep button2 S+ee# $or IB $rom 155A to 1 mA in DECADES +it" .5 #oints #er decade2 ;un t"e simu&ation2 P&ot t"e trace IC'<1)('IB'<1)) versus IB2 A&so #&ot IC'<1)('IB'<1)) versus IC2 3ind0 $rom second #&ot0 t"e ma*imum :C current gain2 3ind t"e corres#onding IB and IC2 :etermine at ca&cu&ated IC2

C. $e"s#s Tempe"!t#"e
Circuit $or t"is ana&ysis is s"o+n in 3ig2 12 Consider %CE = 6%2 =ou can generate versus IC curves at di$$erent tem#eratures2 !"is is a ty#ica& curve $ound in most data s"eets $or B>!s2 Se&ect An!%&sis and t"en set#p $rom t"e Sc"ematics menus0 and t"en c&ic4 t"e LEFT mouse button on t"e DC S'eep button2 S+ee# $or IB $rom 155A to 1 mA in DECADES +it" .5 #oints #er decade2 C&ic4 on t"e Neste) S'eep button and set va&ues .60 .60 1.6 Ce&sius2 1ar4 8 in t"e En!(%e Neste) S'eep bo*2 ;un t"e simu&ation2 9enerate a #&ot o$ versus IC2 At +"at IC is ma*imum? 3

7@!E, I$ you $ind di$$icu&ty in identi$ying t"e curves0 you s"ou&d run eac" case se#arate&y and veri$y t"e identity o$ eac" curve2 !e*t on t"e #&ot to identi$y eac" curve2 S#(missi+n
a2 Submit a&& t"e #&ots +it" t"e re#ort2 b2 :ra+ a dc biasing circuit o$ an am#&i$ier in +"ic" IC +i&& be insensitive to variation in 2 S"o+ a&& t"e re&evant ca&cu&ation2

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