Symbol

V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
26 40
50 75
R
JL
14 24
Junction and Storage Temperature Range
A
P
D
C
3
2.1
-55 to 150
T
A
=70C
I
D
-15
-12.8
-80 Pulsed Drain Current
B
Power Dissipation
A
T
A
=25C
Continuous Drain
Current
A
Maximum Units Parameter
T
A
=25C
T
A
=70C
Absolute Maximum Ratings T
A
=25C unless otherwise noted
V
V 25 Gate-Source Voltage
Drain-Source Voltage -30
C/W
Maximum Junction-to-Ambient
A
Steady-State C/W
W
Maximum Junction-to-Lead
C
Steady-State C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t 10s
R
JA
AO4413
P-Channel Enhancement Mode Field Effect Transistor
June 2002
Features
V
DS
(V) = -30V
I
D
= -15A
R
DS(ON)
< 7m (V
GS
= -20V)
R
DS(ON)
< 8.5m (V
GS
= -10V)
General Description
The AO4413 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications.
SOIC-8
Top View
G
D
S
G
S
S
S
D
D
D
D
Alpha & Omega Semiconductor, Ltd.
AO4413
Symbol Min Typ Max Units
BV
DSS
-30 V
-1
T
J
=55C -5
I
GSS
100 nA
V
GS(th)
-1.5 -2.6 -3.5 V
I
D(ON)
60 A
5.8 7
T
J
=125C 7.2 8.7
7.2 8.5
m
10.4
m
g
FS
38 S
V
SD
-0.72 -1 V
I
S
-4.2 A
C
iss
5034 pF
C
oss
1076 pF
C
rss
829 pF
R
g
2.5
Q
g
78 nC
Q
gs
15.2 nC
Q
gd
23.6 nC
t
D(on)
17.5 ns
t
r
19.5 ns
t
D(off)
49 ns
t
f
30.5 ns
t
rr
43
ns
Q
rr
38 nC
-15
-12.8
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
I
F
=-15A, dI/dt=100A/s
V
GS
=0V, V
DS
=-15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=-10V, V
DS
=-15V, I
D
=-15A Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=1.0,
R
GEN
=3
m
V
GS
=-10V, I
D
=-15A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-15A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS A
Gate Threshold Voltage V
DS
=V
GS
I
D
=-250A
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=-15A, dI/dt=100A/s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250A, V
GS
=0V
V
GS
=-6V, I
D
=-10A
V
GS
=-10V, V
DS
=-5V
V
GS
=-20V, I
D
=-15A
Reverse Transfer Capacitance
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO4413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
-15
-12.8
0
10
20
30
40
50
0 1 2 3 4 5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-
I
D

(
A
)
V
GS
=-4V
-4.5V -5V
-6V
-10V
0
5
10
15
20
25
30
2 2.5 3 3.5 4 4.5 5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-
I
D
(
A
)
4
6
8
10
12
0 5 10 15 20 25 30
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
D
S
(
O
N
)

(
m

)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-
I
S

(
A
)
25C
125C
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
r
m
a
l
i
z
e
d

O
n
-
R
e
s
i
s
t
a
n
c
e
V
GS
=-20V
V
GS
=-10V
4
8
12
16
20
24
4 8 12 16 20
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
D
S
(
O
N
)

(
m

)
25C
125C
V
DS
=-5V
V
GS
=-6V
V
GS
=-10V
I
D
=-15A
25C
125C
I
D
=-15A
V
GS
=-20V
Alpha & Omega Semiconductor, Ltd.
AO4413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
-15
-12.8
0
2
4
6
8
10
0 10 20 30 40 50 60 70 80
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-
V
G
S

(
V
o
l
t
s
)
0
1000
2000
3000
4000
5000
6000
7000
8000
0 5 10 15 20 25 30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
a
p
a
c
i
t
a
n
c
e

(
p
F
)
C
iss
0
10
20
30
40
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
P
o
w
e
r

(
W
)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z

J
A

N
o
r
m
a
l
i
z
e
d

T
r
a
n
s
i
e
n
t

T
h
e
r
m
a
l

R
e
s
i
s
t
a
n
c
e
C
oss
C
rss
0.1
1.0
10.0
100.0
0.1 1 10 100
-V
DS
(Volts)
-
I
D

(
A
m
p
s
)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
T
J(Max)
=150C
T
A
=25C
V
DS
=-15V
I
D
=-15A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
JA
.R
JA
R
JA
=40C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150C
T
A
=25C
10s
T
on
T
P
D
Alpha & Omega Semiconductor, Ltd.

h
L
aaa
b
E1
c
e
D
A
A2
A1
SYMBOLS
0.050 BSC
0.50
1.27
8
0.10
0.10
5.00
6.20
4.00
0.51
0.25

1.55
5.80
0
0.25
0.40

1.27 BSC
0.19
3.80
4.80
1.45
0.33

0.00

1.50
1.45

0.228
0.010
0.016

0.057
0.007
0.013

0.150
0.189
0.000

0.059
0.057

0.244
8
0.020
0.050
0.004
0.010
0.157
0.197
0.061
0.020

0.004
DIMENSIONS IN INCHES DIMENSIONS IN MILLIMETERS
MAX MIN NOM MIN NOM MAX
SOP-8 Package Data
NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE 0.10 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.10 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE
RECOMMENDED LAND PATTERN
F A Y W L C
PACKAGE MARKING DESCRIPTION
NOTE:
LOGO - AOS LOGO
4413 - PART NUMBER CODE.
F - FAB LOCATION
A - ASSEMBLY LOCATION
Y - YEAR CODE
W - WEEK CODE.
L C - ASSEMBLY LOT CODE
SOP-8 PART NO. CODE
LOGO 4 4 1 3
UNIT: mm
ALPHA & OMEGA
SEMICONDUCTOR, INC.
Rev. A
AO4413
PART NO. CODE
4413
SO-8 Tape and Reel Data
SO-8 Carrier Tape
SO-8 Reel
SO-8 Tape
Leader / Trailer
& Orientation
ALPHA & OMEGA
SEMICONDUCTOR, INC.
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Datasheets for electronic components.