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2N3903, 2N3904 General Purpose Transistors: NPN Silicon

This document provides specifications for 2N3903 and 2N3904 transistors, including maximum ratings, electrical characteristics, thermal characteristics, and typical performance curves. It contains detailed technical information on the electrical properties and performance of these transistors.

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0% found this document useful (0 votes)
62 views8 pages

2N3903, 2N3904 General Purpose Transistors: NPN Silicon

This document provides specifications for 2N3903 and 2N3904 transistors, including maximum ratings, electrical characteristics, thermal characteristics, and typical performance curves. It contains detailed technical information on the electrical properties and performance of these transistors.

Uploaded by

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Semiconductor Components Industries, LLC, 2001

November, 2000 Rev. 3


1 Publication Order Number:
2N3903/D
2N3903, 2N3904
2N3903 is a Preferred Device
General Purpose
Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage V
CEO
40 Vdc
CollectorBase Voltage V
CBO
60 Vdc
EmitterBase Voltage V
EBO
6.0 Vdc
Collector Current Continuous I
C
200 mAdc
Total Device Dissipation
@ T
A
= 25C
Derate above 25C
P
D
625
5.0
mW
mW/C
Total Device Dissipation
@ T
C
= 25C
Derate above 25C
P
D
1.5
12
Watts
mW/C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to
+150
C
THERMAL CHARACTERISTICS (Note 1.)
Characteristic Symbol Max Unit
Thermal Resistance,
Junction to Ambient
R
JA
200 C/W
Thermal Resistance,
Junction to Case
R
JC
83.3 C/W
1. Indicates Data in addition to JEDEC Requirements.
Device Package Shipping
ORDERING INFORMATION
2N3903 TO92
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TO92
CASE 29
STYLE 1
5000 Units/Box
3
2
1
Preferred devices are recommended choices for future use
and best overall value.
2N3903RLRM TO92 2000/Ammo Pack
COLLECTOR
3
2
BASE
1
EMITTER
2N3904 TO92 5000 Units/Box
2N3904RLRA TO92 2000/Tape & Reel
2N3904RLRE TO92 2000/Tape & Reel
2N3904RLRM TO92 2000/Ammo Pack
STYLE 1
Y = Year
WW = Work Week
MARKING DIAGRAMS
2N
3903
YWW
2N3904RLRP TO92 2000/Ammo Pack
2N
3904
YWW
2N3904RL1 TO92 2000/Tape & Reel
2N3904ZL1 TO92 2000/Ammo Pack
2N3903, 2N3904
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2
ELECTRICAL CHARACTERISTICS (T
A
= 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 2.) (I
C
= 1.0 mAdc, I
B
= 0) V
(BR)CEO
40 Vdc
CollectorBase Breakdown Voltage (I
C
= 10 mAdc, I
E
= 0) V
(BR)CBO
60 Vdc
EmitterBase Breakdown Voltage (I
E
= 10 mAdc, I
C
= 0) V
(BR)EBO
6.0 Vdc
Base Cutoff Current (V
CE
= 30 Vdc, V
EB
= 3.0 Vdc) I
BL
50 nAdc
Collector Cutoff Current (V
CE
= 30 Vdc, V
EB
= 3.0 Vdc) I
CEX
50 nAdc
ON CHARACTERISTICS
DC Current Gain (Note 2.)
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc) 2N3903
2N3904
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc) 2N3903
2N3904
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc) 2N3903
2N3904
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc) 2N3903
2N3904
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc) 2N3903
2N3904
h
FE
20
40
35
70
50
100
30
60
15
30

150
300

CollectorEmitter Saturation Voltage (Note 2.)


(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc
V
CE(sat)

0.2
0.3
Vdc
BaseEmitter Saturation Voltage (Note 2.)
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
BE(sat)
0.65

0.85
0.95
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz) 2N3903
2N3904
f
T
250
300

MHz
Output Capacitance (V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz) C
obo
4.0 pF
Input Capacitance (V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz) C
ibo
8.0 pF
Input Impedance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) 2N3903
2N3904
h
ie
1.0
1.0
8.0
10
k
Voltage Feedback Ratio
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) 2N3903
2N3904
h
re
0.1
0.5
5.0
8.0
X 10
4
SmallSignal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) 2N3903
2N3904
h
fe
50
100
200
400

Output Admittance (I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz) h
oe
1.0 40 mmhos
Noise Figure
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc, R
S
= 1.0 k , f = 1.0 kHz) 2N3903
2N3904
NF

6.0
5.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= 3.0 Vdc, V
BE
= 0.5 Vdc,
t
d
35 ns
Rise Time
(V
CC
3.0 Vdc, V
BE
0.5 Vdc,
I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
t
r
35 ns
Storage Time (V
CC
= 3.0 Vdc, I
C
= 10 mAdc, 2N3903
I
B1
= I
B2
= 1.0 mAdc) 2N3904
t
s

175
200
ns
Fall Time t
f
50 ns
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%.
2N3903, 2N3904
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3
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
+3 V
275
10 k
1N916
C
S
< 4 pF*
+3 V
275
10 k
C
S
< 4 pF*
< 1 ns
-0.5 V
+10.9 V
300 ns
DUTY CYCLE = 2%
< 1 ns
-9.1 V
+10.9 V
DUTY CYCLE = 2%
t
1
0
10 < t
1
< 500 ms
* Total shunt capacitance of test jig and connectors
TYPICAL TRANSIENT CHARACTERISTICS
Figure 3. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 4. Charge Data
I
C
, COLLECTOR CURRENT (mA)
5000
1.0
V
CC
= 40 V
I
C
/I
B
= 10
Q
,

C
H
A
R
G
E

(
p
C
)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
C
A
P
A
C
I
T
A
N
C
E

(
p
F
)
1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7
Q
T
Q
A
C
ibo
C
obo
T
J
= 25C
T
J
= 125C
2N3903, 2N3904
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4
Figure 5. TurnOn Time
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
Figure 6. Rise Time
I
C
, COLLECTOR CURRENT (mA)
T
I
M
E

(
n
s
)
1.0 2.0 3.0 10 20 70
5
100
t


,

R
I
S
E

T
I
M
E

(
n
s
)
Figure 7. Storage Time
I
C
, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0 30 50 200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5
100 5.0 7.0 30 50 200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5
100 5.0 7.0 30 50 200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5
100 5.0 7.0 30 50 200
10
30
7
20
r
t


,

F
A
L
L

T
I
M
E

(
n
s
)
f
t


,

S
T
O
R
A
G
E

T
I
M
E

(
n
s
)
s
V
CC
= 40 V
I
C
/I
B
= 10
V
CC
= 40 V
I
B1
= I
B2
I
C
/I
B
= 20
I
C
/I
B
= 10
I
C
/I
B
= 10
t
r
@ V
CC
= 3.0 V
t
d
@ V
OB
= 0 V
40 V
15 V
2.0 V
I
C
/I
B
= 10
I
C
/I
B
= 20
I
C
/I
B
= 10 I
C
/I
B
= 20
t
s
= t
s
-
1
/
8
t
f
I
B1
= I
B2
TYPICAL AUDIO SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= 5.0 Vdc, T
A
= 25C, Bandwidth = 1.0 Hz)
Figure 9.
f, FREQUENCY (kHz)
4
6
8
10
12
2
0.1
Figure 10.
R
S
, SOURCE RESISTANCE (k OHMS)
0
N
F
,

N
O
I
S
E

F
I
G
U
R
E

(
d
B
)
1.0 2.0 4.0 10 20 40 0.2 0.4
0
100
4
6
8
10
12
2
14
0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100
N
F
,

N
O
I
S
E

F
I
G
U
R
E

(
d
B
)
f = 1.0 kHz
I
C
= 1.0 mA
I
C
= 0.5 mA
I
C
= 50 mA
I
C
= 100 mA
SOURCE RESISTANCE = 200 W
I
C
= 1.0 mA
SOURCE RESISTANCE = 200 W
I
C
= 0.5 mA
SOURCE RESISTANCE = 500 W
I
C
= 100 mA
SOURCE RESISTANCE = 1.0 k
I
C
= 50 mA
2N3903, 2N3904
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5
h PARAMETERS
(V
CE
= 10 Vdc, f = 1.0 kHz, T
A
= 25C)
Figure 11. Current Gain
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 12. Output Admittance
I
C
, COLLECTOR CURRENT (mA)
h




,

C
U
R
R
E
N
T

G
A
I
N
h




,

O
U
T
P
U
T

A
D
M
I
T
T
A
N
C
E

(



m
h
o
s
)
Figure 13. Input Impedance
I
C
, COLLECTOR CURRENT (mA)
Figure 14. Voltage Feedback Ratio
I
C
, COLLECTOR CURRENT (mA)
30
100
50
5
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0 5.0
0.5
10 0.3 0.5 3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
o
e
h




,

V
O
L
T
A
G
E

F
E
E
D
B
A
C
K

R
A
T
I
O

(
X

1
0




)
r
e
h




,

I
N
P
U
T

I
M
P
E
D
A
N
C
E

(
k

O
H
M
S
)
i
e
0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0
0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0
2
1
0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0
f
e
m
-
4
2N3903, 2N3904
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6
TYPICAL STATIC CHARACTERISTICS
Figure 15. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h





,

D
C

C
U
R
R
E
N
T

G
A
I
N

(
N
O
R
M
A
L
I
Z
E
D
)
0.5 2.0 3.0 10 50 70 0.2 0.3
0.1
100 1.0 0.7 200 30 20 5.0 7.0
F
E
V
CE
= 1.0 V
T
J
= +125C
+25C
-55C
Figure 16. Collector Saturation Region
I
B
, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V





,

C
O
L
L
E
C
T
O
R

E
M
I
T
T
E
R

V
O
L
T
A
G
E

(
V
O
L
T
S
)
0.5 2.0 3.0 10 0.2 0.3
0
1.0 0.7 5.0 7.0
C
E
I
C
= 1.0 mA
T
J
= 25C
0.07 0.05 0.03 0.02 0.01
10 mA 30 mA 100 mA
Figure 17. ON Voltages
I
C
, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
1.2
0.2
Figure 18. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
V
,

V
O
L
T
A
G
E

(
V
O
L
T
S
)
1.0 2.0 5.0 10 20 50
0
100
-0.5
0
0.5
1.0
0 60 80 120 140 160 180 20 40 100
C
O
E
F
F
I
C
I
E
N
T

(
m
V
/


C
)
200
-1.0
-1.5
-2.0
200

T
J
= 25C
V
BE(sat)
@ I
C
/I
B
=10
V
CE(sat)
@ I
C
/I
B
=10
V
BE
@ V
CE
=1.0 V
+25C TO +125C
-55C TO +25C
+25C TO +125C
-55C TO +25C
q
VC
FOR V
CE(sat)
q
VB
FOR V
BE(sat)
2N3903, 2N3904
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7
PACKAGE DIMENSIONS
TO92
TO226AA
CASE 2911
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERS INCHES
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
R 0.115 --- 2.93 ---
V 0.135 --- 3.43 ---
1
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
2N3903, 2N3904
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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be
validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
4321 NishiGotanda, Shinagawaku, Tokyo, Japan 1410031
Phone: 81357402700
Email: [email protected]
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For additional information, please contact your local
Sales Representative.
2N3903/D
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
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