CR02AM-8

Thyristor
Low Power Use
REJ03G0542-0100
Rev.1.00
Mar.28.2005

Features
IT (AV) : 0.3 A
VDRM : 400 V
IGT : 100 A

Planar Passivation Type

Completed Pb free product

Outline
RENESAS Package code: PRSS0003DE-A
(Package name: TO-92(3))
2

1. Cathode
2. Anode
3. Gate

3
1
3

Applications
Solid state relay, leakage protector, fire alarm, timer, ring counter, electric blanket, protective circuit for acoustic
equipment, strobe flasher, and other general purpose control applications

Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltageNote1
DC off-state voltageNote1

Rev.1.00,

Mar.28.2005,

page 1 of 7

Symbol
VRRM
VRSM
VR (DC)
VDRM
VD (DC)

Voltage class
8
400
500
320
400
320

Unit
V
V
V
V
V

CR02AM-8
Parameter
RMS on-state current
Average on-state current

Symbol
IT (RMS)
IT (AV)

Ratings
0.47
0.3

Unit
A
A

ITSM

10

I2 t

0.4

A2s

PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg

0.1
0.01
6
6
0.1
40 to +125
40 to +125
0.23

W
W
V
V
A
C
C
g

Surge on-state current

I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass

Conditions
Commercial frequency, sine half wave
180 conduction, Ta = 30C
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current

Typical value

Notes: 1. With gate to cathode resistance RGK = 1 k.

Electrical Characteristics
Parameter
Repetitive peak reverse current
Repetitive peak off-state current

Symbol
IRRM
IDRM

Min.

Typ.

Max.
0.1
0.1

Unit
mA
mA

On-state voltage

VTM

1.6

Ta = 25C, ITM = 0.6 A,

instantaneous value

Gate trigger voltage

VGT

0.8

Tj = 25C, VD = 6 V,
Note3
IT = 0.1 A

Gate non-trigger voltage

VGD

0.2

Tj = 125C, VD = 1/2 VDRM,

RGK = 1 k

Gate trigger current

IGT

20

100Note2

Tj = 25C, VD = 6 V,
Note3
IT = 0.1 A

Holding current

IH

mA

Rth (j-a)

180

C/W

Tj = 25C, VD = 12 V,
RGK = 1 k
Junction to ambient

Thermal resistance

Test conditions
Tj = 125C, VRRM applied
Tj = 125C, VDRM applied,
RGK = 1 k

Notes: 2. If special values of IGT are required, choose item E from those listed in the table below if possible.
Item
B
E
IGT (A)

20 to 50

20 to 100

The above values do not include the current flowing through the 1 k resistance between the gate and
cathode.
3. IGT, VGT measurement circuit.
A1

3V
DC

IGS

IGT

A3

A2

RGK
1
1k
Switch

60

TUT
V1

6V
DC

VGT

Switch 1 : IGT measurement

Switch 2 : VGT measurement
(Inner resistance of voltage meter is about 1k)

Rev.1.00,

Mar.28.2005,

page 2 of 7

CR02AM-8

Performance Curves

101
7 Ta = 25C
5
3
2

Rated Surge On-State Current

10

Surge On-State Current (A)

On-State Current (A)

Maximum On-State Characteristics

100
7
5
3
2
101
7
5
3
2

7
5
3
2

101
7
5
3
2

VFGM = 6V

PGM = 0.1W

PG(AV) = 0.01W
VGT = 0.8V
IGT = 100A
(Tj = 25C)
VGD = 0.2V

IFGM = 0.1A

3
2
1
2 3 4 5 7 101

2 3 4 5 7 10 2

100 (%)

103
7
5
3
2

Typical Example

102
7
5
3
2
101
7
5
3
2
100
60 40 20 0 20 40 60 80 100 120 140

Gate Current (mA)

Junction Temperature (C)

Gate Trigger Voltage vs.

Junction Temperature

Maximum Transient Thermal Impedance

Characteristics (Junction to ambient)

1.0
0.9

Gate Trigger Voltage (V)

Gate Trigger Current vs.

Junction Temperature

102
102 2 3 5 71012 3 5 7 100 2 3 5 7 101 2 3 5 7 102

Distribution

0.8

Typical Example

0.7
0.6
0.5
0.4
0.3
0.2
0.1

0
40 20 0 20 40 60 80 100 120 140 160

Junction Temperature (C)

Rev.1.00,

Gate Characteristics

Gate Trigger Current (Tj = tC)

Gate Trigger Current (Tj = 25C)

100

Conduction Time (Cycles at 60Hz)

Mar.28.2005,

page 3 of 7

Transient Thermal Impedance (C/W)

Gate Voltage (V)

7
5
3
2

On-State Voltage (V)

102

101

0
100

102
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6

7
5
3
2

100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103

200
180
160
140
120
100
80
60
40
20
0
103 2 3 5 7102 2 3 5 7101 2 3 5 7 100

Time (s)

CR02AM-8
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)

0.8

160

0.7

140

120

360

0.6

180

120

0.5

60
0.4

90

= 30

0.3

0.2

360
Resistive,
inductive loads

0.1
0

0.1

0.2

Ambient Temperature (C)

Average Power Dissipation (W)

Maximum Average Power Dissipation

(Single-Phase Half Wave)

20

= 30 60
0

90 120

0.1

0.2

180
0.4

0.3

Maximum Average Power Dissipation

(Single-Phase Full Wave)

Allowable Ambient Temperature vs.

Average On-State Current
(Single-Phase Full Wave)
160

0.7

Ambient Temperature (C)

Average Power Dissipation (W)

40

Average On-State Current (A)

180
120

0.6

90
0.5

60

0.4

= 30

0.3

0.2

360

0.1

140

120

360

0.1

0.2

0.3

80
60
40
20
0

0.5

0.4

Resistive loads
Natural convection

100

= 30

Resistive loads
0

0.1

60 90 120
0.2

180
0.4

0.3

0.5

Average On-State Current (A)

Average On-State Current (A)

Maximum Average Power Dissipation

(Rectangular Wave)

Allowable Ambient Temperature vs.

Average On-State Current
(Rectangular Wave)

0.8

160
DC

0.7
180

0.6

270

120
0.5
60

0.4

90

= 30

0.3

0.2

360

0.1
0

Resistive,
inductive loads
0

0.1

0.2

0.3

0.4

Average On-State Current (A)

Mar.28.2005,

page 4 of 7

0.5

Ambient Temperature (C)

Average Power Dissipation (W)

60

Average On-State Current (A)

0.8

Rev.1.00,

80

0.4

0.3

Resistive,
inductive loads
Natural convection

100

Resistive,
inductive loads
Natural convection

140

360

120
100

= 30
60
90
120
180
270
DC

80
60
40
20
0

0.1

0.2

0.3

0.4

Average On-State Current (A)

0.5

Typical Example

RGK = 1k

140
120
100
80
60
40
20
0
40 20 0 20 40 60 80 100 120 140 160

Breakover Voltage vs.

Gate to Cathode Resistance
120

Typical Example
Tj = 125C

100
80
60
40
20

0
101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102

Junction Temperature (C)

Gate to Cathode Resistance (k)

Breakover Voltage vs.

Rate of Rise of Off-State Voltage

Holding Current vs.

Junction Temperature

100
80
60

#2

40

#1
Typical Example
# 1 IGT(25C)=10A
20
# 2 IGT(25C)=66A
Tj = 125C, RGK = 1k
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103

Holding Current (mA)

120

102
7
5
3
2
101
7
5
3
2

Tj = 25C
Typical Example
IH(25C) = 1mA
IGT(25C) = 25A
Distribution
Typical Example

100
7
5
3
2
101
60 40 20 0 20 40 60 80 100 120 140

Junction Temperature (C)

Holding Current vs.

Gate to Cathode Resistance

Repetitive Peak Reverse Voltage vs.

Junction Temperature

500

Typical Example
IGT(25C) IH(1k)
1.6mA
# 1 13A
# 2 59A
1.8mA

400

#1
300

#2
200

100

Tj = 25C
0
101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102

Mar.28.2005,

page 5 of 7

100 (%)

Rate of Rise of Off-State Voltage (V/s)

Gate to Cathode Resistance (k)

Rev.1.00,

Breakover Voltage (RGK = rk)

Breakover Voltage (RGK = 1k)

160

Repetitive Peak Reverse Voltage (Tj = tC)

Repetitive Peak Reverse Voltage (Tj = 25C)

Holding Current (RGK = rk)

Holding Current (RGK = 1k)

100 (%)

Breakover Voltage (dv/dt = vV/s)

Breakover Voltage (dv/dt = 1V/s)

100 (%)

Breakover Voltage (Tj = tC)

Breakover Voltage (Tj = 25C)

100 (%)

Breakover Voltage vs.

Junction Temperature

100 (%)

CR02AM-8

160

Typical Example

140
120
100
80
60
40
20
0
40 20 0 20 40 60 80 100 120 140 160

Junction Temperature (C)

CR02AM-8

Gate Trigger Current (tw)

Gate Trigger Current (DC)

100 (%)

Gate Trigger Current vs.

Gate Current Pulse Width
103
7
5
4
3
2

#1

Typical Example
IGT(25C)
# 1 10A
# 2 # 2 66A

102
7
5
4
3
2

Tj = 25C
101
100
2 3 4 5 7 101

2 3 4 5 7 102

Gate Current Pulse Width (s)

Rev.1.00,

Mar.28.2005,

page 6 of 7

CR02AM-8

Package Dimensions
JEITA Package Code

RENESAS Code

Package Name

MASS[Typ.]

SC-43A

PRSS0003DE-A

TO-92(3)

0.23g

4.8 0.3

Unit: mm

2.3 Max
0.7

0.60 Max
0.55 Max

12.7 Min

5.0 0.2

3.8 0.3

0.42 Max

1.27
2.54

Order Code
Lead form

Standard packing

Quantity

Standard order code

Straight type
Vinyl sack
500 Type name
Form A8
Taping
2500 Type name ETZ
Note : Please confirm the specification about the shipping in detail.

Rev.1.00,

Mar.28.2005,

page 7 of 7

Standard order
code example
CR02AM-8-E
CR02AM-8-ETZ