Order this document
by MMFT3055EL/D
www.DataSheet4U.com
SEMICONDUCTOR TECHNICAL DATA
NChannel Enhancement Mode
Silicon Gate TMOS EFETt
SOT223 for Surface Mount
Motorola Preferred Device
MEDIUM POWER
LOGIC LEVEL TMOS FET
1.5 AMP
60 VOLTS
RDS(on) = 0.18 OHM
This advanced EFET is a TMOS power MOSFET designed to
withstand high energy in the avalanche and commutation modes.
This device is also designed with a low threshold voltage so it is
fully enhanced with 5 Volts. This new energy efficient device also
offers a draintosource diode with a fast recovery time. Designed
for low voltage, high speed switching applications in power
supplies, converters and PWM motor controls, these devices are
particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients. The device is
housed in the SOT223 package which is designed for medium
power surface mount applications.
Silicon Gate for Fast Switching Speeds
Low Drive Requirement to Interface Power Loads to Logic
Level ICs, VGS(th) = 2 Volts Max
Low RDS(on) 0.18 max
The SOT223 Package can be Soldered Using Wave or Reflow. The Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibility of Damage to the Die
Available in 12 mm Tape and Reel
Use MMFT3055ELT1 to order the 7 inch/1000 unit reel.
Use MMFT3055ELT3 to order the 13 inch/4000 unit reel.
2,4
D
4
1
2
3
1
G
S
CASE 318E04, STYLE 3
TO261AA
MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDS
60
GatetoSource Voltage Continuous
VGS
15
Drain Current Continuous
Drain Current Pulsed
ID
IDM
1.5
6
Adc
PD(1)
0.8
6.4
Watts
mW/C
TJ, Tstg
65 to 150
EAS
178
mJ
RJA
156
C/W
TL
260
5
C
Sec
Total Power Dissipation @ TA = 25C
Derate above 25C
Operating and Storage Temperature Range
Single Pulse DraintoSource Avalanche Energy Starting TJ = 25C
(VDD = 25 V, VGS = 5 V, Peak IL= 1.5 A, L = 0.2 mH, RG = 25 )
Vdc
DEVICE MARKING
3055L
THERMAL CHARACTERISTICS
Thermal Resistance JunctiontoAmbient (surface mounted)
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
(1) Power rating when mounted on FR4 glass epoxy printed circuit board using recommended footprint.
TMOS is a registered trademark of Motorola, Inc.
EFET is a trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
TMOS
Motorola
Motorola, Inc.
1995 Power MOSFET Transistor Device Data
MMFT3055EL
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
60
Vdc
Zero Gate Voltage Drain Current, (VDS = 60 V, VGS = 0)
IDSS
10
Adc
GateBody Leakage Current, (VGS = 15 V, VDS = 0)
IGSS
100
nAdc
Gate Threshold Voltage, (VDS = VGS, ID = 1.0 mA)
VGS(th)
Vdc
Static DraintoSource OnResistance, (VGS = 5 V, ID = 0.75 A)
RDS(on)
0.18
Ohms
DraintoSource OnVoltage, (VGS = 5 V, ID = 1.5 A)
VDS(on)
0.36
Vdc
Forward Transconductance, (VDS = 15 V, ID = 0.75 A)
gFS
2.1
mhos
Ciss
500
Coss
175
Crss
40
td(on)
20
tr
95
td(off)
38
tf
50
Qg
15
Qgs
1.3
Qgd
6.3
1.0
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage, (VGS = 0, ID = 250 A)
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 V,
VGS = 0,
f = 1 MHz)
Output Capacitance
Reverse Transfer Capacitance
pF
SWITCHING CHARACTERISTICS
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD= 25 V, ID = 6 A
VGS = 5 V, RG = 50 ohms,
RGS = 25 ohms)
Fall Time
Total Gate Charge
GateSource Charge
GateDrain Charge
(VDS = 48 V, ID = 1.5 A,
VGS = 5 Vdc)
See Figures 15 and 16
ns
nC
SOURCE DRAIN DIODE CHARACTERISTICS(1)
Forward OnVoltage
IS = 1.5 A, VGS = 0
VSD
Forward TurnOn Time
IS = 1.5 A, VGS = 0,
dlS/dt = 400 A/s,
VR = 30 V
ton
Reverse Recovery Time
trr
Vdc
Limited by stray inductance
55
ns
(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%
Motorola TMOS Power MOSFET Transistor Device Data
MMFT3055EL
www.DataSheet4U.com
1.2
10
4.5 V
5.0 V
4.0 V
8.0
6.0
3.5 V
4.0
3.0 V
2.0
VGS = 2.5 V
0
1.0
2.0
3.0
4.0
ID , DRAIN CURRENT (AMPS)
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS)
1.0
0.9
0.8
50
100
150
TJ, JUNCTION TEMP (C)
Figure 1. On Region Characteristics
Figure 2. GateThreshold Voltage Variation
With Temperature
TJ = 55C
VDS = 8 V
25C
8.0
100C
6.0
4.0
2.0
2.0
4.0
6.0
7.0
0.30
VGS = 5 V
0.25
TJ = 100C
0.20
25C
0.15
55C
0.10
0.05
0
1.0
2.0
3.0
4.0
VGS, GATETOSOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 3. Transfer Characteristics
Figure 4. OnResistance versus Drain Current
0.5
TJ = 25C
ID = 1.5 A
0.4
0.3
0.2
0.1
0
2.0
1.1
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
10
VDS = VGS
ID = 1.0 mA
0.7
50
5.0
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS)
3.0
4.0
5.0
6.0
7.0
8.0
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS)
ID , DRAIN CURRENT (AMPS)
5.5 V
TJ = 25C
VGS(TH), GATE THRESHOLD VOLTAGE
(NORMALIZED)
6.0 V
0.4
VGS = 5 V
ID = 1.5 A
0.3
0.2
0.1
0
50
50
100
VGS, GATETOSOURCE VOLTAGE (VOLTS)
TJ, JUNCTION TEMP (C)
Figure 5. OnResistance versus
GatetoSource Voltage
Figure 6. OnResistance versus
Junction Temperature
Motorola TMOS Power MOSFET Transistor Device Data
150
MMFT3055EL
www.DataSheet4U.com
FORWARD BIASED SAFE OPERATING AREA
10
ID , DRAIN CURRENT (AMPS)
The FBSOA curves define the maximum draintosource
voltage and drain current that a device can safely handle
when it is forward biased, or when it is on, or being turned on.
Because these curves include the limitations of simultaneous
high voltage and high current, up to the rating of the device,
they are especially useful to designers of linear systems. The
curves are based on an ambient temperature of 25C and a
maximum junction temperature of 150C. Limitations for repetitive pulses at various ambient temperatures can be determined by using the thermal response curves. Motorola
Application Note, AN569, Transient Thermal Resistance
General Data and Its Use provides detailed instructions.
1.0
20 ms
0.1
VGS = 15 V
SINGLE PULSE
TA = 25C
500 ms
RDS(on) LIMIT
THERMAL LIMIT
The switching safe operating area (SOA) is the boundary
that the load line may traverse without incurring damage to
the MOSFET. The fundamental limits are the peak current,
IDM and the breakdown voltage, BVDSS. The switching SOA
is applicable for both turnon and turnoff of the devices for
switching times less than one microsecond.
r(t), EFFECTIVE THERMAL RESISTANCE
(NORMALIZED)
100 ms
1s
SWITCHING SAFE OPERATING AREA
1.0
DC
0.01
0.1
10
1.0
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
100
Figure 7. Maximum Rated Forward Biased
Safe Operating Area
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
0.01
0.001
1.0E05
0.01
t1
SINGLE PULSE
1.0E04
1.0E03
RJA(t) = r(t) RJA
RJA = 156C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RJA(t)
t2
DUTY CYCLE, D = t1/t2
1.0E02
1.0E01
1.0E+00
1.0E+01
t, TIME (s)
Figure 8. Thermal Response
COMMUTATING SAFE OPERATING AREA (CSOA)
The Commutating Safe Operating Area (CSOA) of Figure 10 defines the limits of safe operation for commutated sourcedrain
current versus reapplied drain voltage when the sourcedrain diode has undergone forward bias. The curve shows the limitations of IFM and peak VDS for a given rate of change of source current. It is applicable when waveforms similar to those of Figure
9 are present. Full or halfbridge PWM DC motor controllers are common applications requiring CSOA data.
Device stresses increase with increasing rate of change of source current so dIS/dt is specified with a maximum value. Higher
values of dIS/dt require an appropriate derating of IFM, peak VDS or both. Ultimately dIS/dt is limited primarily by device, package,
and circuit impedances. Maximum device stress occurs during trr as the diode goes from conduction to reverse blocking.
VDS(pk) is the peak draintosource voltage that the device must sustain during commutation; I FM is the maximum forward
sourcedrain diode current just prior to the onset of commutation.
VR is specified at 80% rated BVDSS to ensure that the CSOA stress is maximized as IS decays from IRM to zero.
RGS should be minimized during commutation. TJ has only a second order effect on CSOA.
Stray inductances in Motorolas test circuit are assumed to be practical minimums. dV DS /dt in excess of 10 V/ns was attained with dI S /dt of 400 A/s.
Motorola TMOS Power MOSFET Transistor Device Data
MMFT3055EL
www.DataSheet4U.com
15 V
VGS
0
IFM
dlS/dt
90%
IS
10%
trr
ton
IRM
0.25 IRM
tfrr
VDS(pk)
VR
VDS
VdsL
Vf
MAX. CSOA
STRESS AREA
Figure 9. Commutating Waveforms
10
IS , SOURCE CURRENT (AMPS)
RGS
DUT
8.0
6.0
VR
+
4.0
IFM
IS
+
20 V
2.0
VGS
0
0
20
40
60
VR = 80% OF RATED VDSS
VdsL = Vf + Li dlS/dt
80
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 10. Commutating Safe Operating Area (CSOA)
Li
VDS
Figure 11. Commutating Safe Operating Area
Test Circuit
BVDSS
L
VDS
IL
IL(t)
VDD
RG
VDD
tP
Figure 12. Unclamped Inductive Switching
Test Circuit
Motorola TMOS Power MOSFET Transistor Device Data
t, (TIME)
Figure 13. Unclamped Inductive Switching
Waveforms
MMFT3055EL
www.DataSheet4U.com
VGS
VDS
1800
Ciss
C, CAPACITANCE (pF)
1600
TJ = 25C
1400
Coss
VDS = 0
1200
VGS = 0
1000
Crss
800
Ciss
600
Coss
400
200
0
Crss
15
10
10
15
20
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
VGS , GATETOSOURCE VOLTAGE (VOLTS)
Figure 14. Capacitance Variation With Voltage
10
TJ = 25C
VDS = 48 V
ID = 1.5 A
8.0
6.0
4.0
2.0
2.5
7.5
12.5
17.5
22.5
Qg, TOTAL GATE CHARGE (nC)
Figure 15. Gate Charge versus
GateToSource Voltage
+18 V
47 k
Vin
15 V
VDD
1 mA
5V
0.1 F
2N3904
2N3904
100 k
47 k
SAME
DEVICE TYPE
AS DUT
100 k
100
FERRITE
BEAD
DUT
Vin = 15 Vpk; PULSE WIDTH 100 s, DUTY CYCLE 10%.
Figure 16. Gate Charge Test Circuit
Motorola TMOS Power MOSFET Transistor Device Data
MMFT3055EL
www.DataSheet4U.com
INFORMATION FOR USING THE SOT223 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must be
the correct size to insure proper solder connection interface
between the board and the package. With the correct pad
geometry, the packages will self align when subjected to a
solder reflow process.
0.15
3.8
0.079
2.0
0.091
2.3
0.248
6.3
0.091
2.3
0.079
2.0
0.059
1.5
0.059
1.5
0.059
1.5
inches
mm
SOT223
SOT223 POWER DISSIPATION
PD =
TJ(max) TA
RJA
150C 25C = 800 milliwatts
PD =
156C/W
The 156C/W for the SOT223 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 800 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT223 package. One is to increase the area of the
drain pad. By increasing the area of the drain pad, the power
dissipation can be increased. Although one can almost double
Motorola TMOS Power MOSFET Transistor Device Data
160
140
Board Material = 0.0625
G10/FR4, 2 oz Copper
TA = 25C
0.8 Watts
120
1.5 Watts
1.25 Watts*
100
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25C, one can
calculate the power dissipation of the device which in this case
is 800 milliwatts.
the power dissipation with this method, one will be giving up
area on the printed circuit board which can defeat the purpose
of using surface mount technology. A graph of RJA versus
drain pad area is shown in Figure 17.
R JA , Thermal Resistance, Junction
to Ambient ( C/W)
The power dissipation of the SOT223 is a function of the
drain pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined by
TJ(max), the maximum rated junction
temperature of the die, RJA, the thermal resistance from the
device junction to ambient, and the operating temperature, TA.
Using the values provided on the data sheet for the SOT223
package, PD can be calculated as follows:
*Mounted on the DPAK footprint
80
0.0
0.2
0.4
0.6
0.8
1.0
A, Area (square inches)
Figure 17. Thermal Resistance versus Drain Pad
Area for the SOT223 Package (Typical)
Another alternative would be to use a ceramic substrate or
an aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
MMFT3055EL
www.DataSheet4U.com
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass or
stainless steel with a typical thickness of 0.008 inches. The
stencil opening size for the SOT223 package should be the
same as the pad size on the printed circuit board, i.e., a 1:1
registration.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and soldering
should be 100C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10C.
The soldering temperature and time shall not exceed
260C for more than 10 seconds.
When shifting from preheating to soldering, the maximum
temperature gradient shall be 5C or less.
After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during
cooling
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of control
settings that will give the desired heat pattern. The operator
must set temperatures for several heating zones, and a figure
for belt speed. Taken together, these control settings make up
a heating profile for that particular circuit board. On
machines controlled by a computer, the computer remembers
these profiles from one operating session to the next. Figure
18 shows a typical heating profile for use when soldering a
surface mount device to a printed circuit board. This profile will
vary among soldering systems but it is a good starting point.
Factors that can affect the profile include the type of soldering
system in use, density and types of components on the board,
type of solder used, and the type of board or substrate material
being used. This profile shows temperature versus time. The
STEP 1
PREHEAT
ZONE 1
RAMP
200C
STEP 2
STEP 3
VENT
HEATING
SOAK ZONES 2 & 5
RAMP
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
line on the graph shows the actual temperature that might be
experienced on the surface of a test board at or near a central
solder joint. The two profiles are based on a high density and
a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this
profile. The type of solder used was 62/36/2 Tin Lead Silver
with a melting point between 177 189C. When this type of
furnace is used for solder reflow work, the circuit boards and
solder joints tend to heat first. The components on the board
are then heated by conduction. The circuit board, because it
has a large surface area, absorbs the thermal energy more
efficiently, then distributes this energy to the components.
Because of this effect, the main body of a component may be
up to 30 degrees cooler than the adjacent solder joints.
STEP 4
HEATING
ZONES 3 & 6
SOAK
STEP 5
STEP 6 STEP 7
HEATING
VENT COOLING
ZONES 4 & 7
205 TO 219C
SPIKE
PEAK AT
170C
SOLDER JOINT
160C
150C
150C
140C
100C
100C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
50C
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 18. Typical Solder Heating Profile
Motorola TMOS Power MOSFET Transistor Device Data
MMFT3055EL
www.DataSheet4U.com
PACKAGE DIMENSIONS
A
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
B
1
D
L
G
J
C
0.08 (0003)
M
K
INCHES
DIM MIN
MAX
A
0.249
0.263
B
0.130
0.145
C
0.060
0.068
D
0.024
0.035
F
0.115
0.126
G
0.087
0.094
H 0.0008 0.0040
J
0.009
0.014
K
0.060
0.078
L
0.033
0.041
M
0_
10 _
S
0.264
0.287
STYLE 3:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
6.30
6.70
3.30
3.70
1.50
1.75
0.60
0.89
2.90
3.20
2.20
2.40
0.020
0.100
0.24
0.35
1.50
2.00
0.85
1.05
0_
10_
6.70
7.30
GATE
DRAIN
SOURCE
DRAIN
CASE 318E04
TO261AA
SOT223
ISSUE H
Motorola TMOS Power MOSFET Transistor Device Data
MMFT3055EL
www.DataSheet4U.com
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different
applications. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers:
USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England.
JAPAN: Nippon Motorola Ltd.; 4321, NishiGotanda, Shinagawaku, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
10
Motorola TMOS Power MOSFET Transistor
Device Data
MMFT3055EL/D
*MMFT3055EL/D*
