N-D92-02
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode, 2 x 10 A
FEATURES
Ultrafast recovery
Ultrasoft recovery
Very low l RRM
Very low Q rr
Specified at operating conditions
Designed and qualified for industrial level
BENEFITS
Reduced RFI and EMI
Reduced power loss in diode
and switching transistor.
Higher frequency operation
Reduced snubbing
Reduced parts count
TO-3PB
common
cathode
2
APPLICATIONS
Switching mode power supplies
UPS
DC/DC converters
Free wheeling diodes
Inverters
Motor drives
1
Anode
1
2
Common
cathode
3
Anode
2
DESCRIPTION
D92-02 is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques
it features a superb combination of characteristics
which result in performance which is unsurpassed
by any rectifier previously available. With basic
ratings of 200V and 10 A per leg continuous current,
the D92-02 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. The FRED
features combine to offer designers a rectifier with
lower noise and significantly lower switching losses
in both the diode and the switching transistor. These
FRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes.
PRODUCT SUMMARY
VR
200 V
VF at 10A at 25 C
0.95 V
IF(AV)
2 x 10 A
trr (typical)
35 ns
TJ (maximum)
150 C
Qrr (typical)
25 nC
lRRM (typical)
1.9 A
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
TEST CONDITIONS
VR
per leg
per device
VALUES
UNIT
200
10
IF
50Hz square
wave duty = , T C =115C
20
Single pulse forward current (Peak forward current per leg)
l FSM
100
Maximum repetitive forward current (per leg)
l FRM
40
T J , T Stg
- 55 to + 150
Operating junction and storage temperature range
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N-D92-02
SEMICONDUCTOR
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Nell High Power Products
ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
Maximum forward voltage
SYMBOL
VFM
IRM
Junction capacitance
CT
Series inductance
LS
UNIT
MIN.
TYP.
MAX.
200
IF = 10 A
0.9
0.95
IF = 20 A
IF = 10 A, TJ = 125 C
0.8
V R = V R rated
15
T J = 125C, V R = V R rated
250
V R = 200V
55
pF
Measured lead to lead 5 mm from package body
nH
UNIT
IR = 100 A
VBR
Maximum reverse
leakage current
TEST CONDITIONS
DYNAMIC RECOVERY CHARACTERISTICS PERLEG(TJ = 25 C unless otherwise specified)
PARAMETER
SYMBOL
t rr
Reverse recovery charge
MIN.
TYP.
MAX.
I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT)
14
20
IF = 1.0 A, dIF/dt = 50 A/s, VR =30 V, TJ = 25C
30
t rr1
TJ = 25 C
21
t rr2
TJ = 125 C
35
1.9
4.8
Reverse recovery time
Peak recovery current
TEST CONDITIONS
IF= 10A
dIF/dt = -200 A/s
VR = 160 V
ns
l RRM1
TJ = 25 C
l RRM2
TJ = 125 C
Q rr1
TJ = 25 C
25
Q rr2
TJ = 125 C
78
MIN.
TYP.
MAX.
UNITS
300
1.5
0.7
nC
THERMAL - MECHANICAL SPECIFICATIONS PER LEG
PARAMETER
Lead temperature
Junction to case,
single leg conduction
Junction to case,
both legs conducting
SYMBOL
Tlead
TEST CONDITIONS
0.063 '' from case (1.6 mm) for 10 s
RthJC
K/W
Thermal resistance,
junction to ambient
RthJA
Typical socket mount
40
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and greased
0.25
5.5
0.19
g
oz.
6
(5)
12
(10)
kgf . cm
(lbf . in)
Weight
Mounting torque
Marking device
Case style TO-3PB (JEDEC)
D92-02
ORDERING INFORMATION TABLE
Device code
D92
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02
3
- Nell Semiconductors product
- FRED family, type = D92, current rating = 10A x 2,
- Voltage rating, 02 = 200V
package outline = TO-3PB
Page 2 of 5
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N-D92-02
SEMICONDUCTOR
Nell High Power Products
Fig.2 Typical values of reverse current vs.
reverse voltage
100
100
Reverse current, l R (A)
lnstantaneous forward current, I F (A)
Fig.1 Maximum forward voltage drop
characteristics
10
T J =150C
T J =125C
T J =25C
T J =125 C
T J =100 C
0.1
T J =25 C
0.01
0.001
0.1
0
0.4
0.8
1.6
1.2
2.0
50
100
150
200
250
Forward voltage drop, V FM (V)
Reverse voltage, V R (V)
Fig.3 Typical junction capacitance vs.
reverse voltage
Fig.4 Maximum allowable case temperature vs.
average forward current
Allowable case temperature ( C)
1000
Junction capacitance, C T (pF)
T J =150C
10
T J =25 C
100
10
0
10
100
160
150
140
DC
130
Square wave (D = 0.50)
Rated V R applied
120
110
See note (1)
100
0
1000
15
12
Average forward current, l F(AV) (A)
Reverse voltage, V R (V)
Thermal lmpedance, R th(j-c) (C/W)
Fig.5 Maximum thermal impedance R th(j-c) characteristics
10
1
P DM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
t1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
t2
Notes:
1. Duty Factor D =t 1 /t 2.
2.Peak T J = PDM x R th(j-c) +T C
0.01
Rectangular pulse duration, t 1 (s)
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0.1
.
1
N-D92-02
SEMICONDUCTOR
RoHS
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Nell High Power Products
Fig.7 Typical reverse recovery time vs. dl F /dt
15
50
12
40
RMS limit
t rr (ns)
Average power loss (W)
Fig.6 Forward power loss characteristics
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
12
20
l F = 20A
l F = 10A
l F = 5A
V R = 160V
0
100
0
0
30
10
DC
T J =125C
T J =25C
15
1000
Average forward current, l F(AV) (A)
dl F /dt(A/ s)
Fig.9 Reverse recovery parameter test circuit
Fig.8 Typical stored charge vs. dl F /dt
Q rr (nC)
250
200
T J =125C
T J =25C
150
l F = 20A
l F = 10A
l F = 5A
V R =200V
0.01
L=70H
D.U.T.
100
dl F /dt
adjust
50
V R = 160V
0
100
IRFP250
1000
dl F /dt(A/ s)
Note
(1) Formula used:T C = T J - (Pd+Pd REV ) x R thJC ;
Pd = Forward power loss = l F(AV) x V FM at (l F(AV) /D)(see fig.6);
Pd REV = lnverse power loss = V R1 x l R (1-D); l R at V R1 = Rated V R
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N-D92-02
SEMICONDUCTOR
RoHS
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Nell High Power Products
Fig.10 Reverse recovery waveform and definitions
(3)
t rr
IF
ta
tb
Q rr
(2)
l RRM
(4)
0.5 l RRM
dl (rec)M /dt (5)
0.75 l RRM
(1) dl F /dt
(1) dl F /dt - rate of change of current
through zero crossing
(4) Q rr - area under curve defined by t rr
and l RRM
(2) l RRM - peak reverse recovery current
Qrr =
t rr xl RRM
2
(3) t rr - reverse recovery time measured
from zero crossing point of negative (5) dl (rec)M /dt - peak rate of change of
current during t b portion of t rr
going l F to point where a line passing
through 0.75 l RRM and 0.50 l RRM
extrapolated to zero current.
1.8
4.0
4.80.2
2.00.1
3.2 0,1
4.0 max
20.0 min
19.90.3
2.0
15.60.4
9.6
5.0 0 . 2
TO-3PB
5.450.1
+0.2
1.05 -0.1
+0.2
0.65 -0.1
5.450.1
1.4
common
cathode
2
3
1
Anode
1
All dimensions in millimeters
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2
Common
cathode
3
Anode
2
