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D92 02 Ultar Fest PDF

This document summarizes an ultrafast soft recovery diode with a maximum forward voltage of 0.95V at 10A and 25°C, reverse recovery time of 35ns, and peak reverse recovery current of 1.9A. It has a continuous forward current rating of 10A per leg and is well suited for switching power supplies, motor drives, and other applications requiring fast switching times and low power losses.

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2K views5 pages

D92 02 Ultar Fest PDF

This document summarizes an ultrafast soft recovery diode with a maximum forward voltage of 0.95V at 10A and 25°C, reverse recovery time of 35ns, and peak reverse recovery current of 1.9A. It has a continuous forward current rating of 10A per leg and is well suited for switching power supplies, motor drives, and other applications requiring fast switching times and low power losses.

Uploaded by

Cicero Mello
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SEMICONDUCTOR N-D92-02 RoHS

RoHS
Nell High Power Products

FRED
Ultrafast Soft Recovery Diode, 2 x 10 A

FEATURES
Ultrafast recovery
Ultrasoft recovery
Very low l RRM
Very low Q rr
Specified at operating conditions
Designed and qualified for industrial level

BENEFITS
Reduced RFI and EMI
TO-3PB
Reduced power loss in diode
and switching transistor.
Higher frequency operation
Reduced snubbing common
cathode
Reduced parts count 2

APPLICATIONS
Switching mode power supplies
UPS
DC/DC converters 1 3
Free wheeling diodes Anode Anode
1 2 2
Inverters Common
Motor drives cathode

DESCRIPTION
D92-02 is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques
it features a superb combination of characteristics PRODUCT SUMMARY
which result in performance which is unsurpassed
VR 200 V
by any rectifier previously available. With basic
ratings of 200V and 10 A per leg continuous current, VF at 10A at 25 C 0.95 V
the D92-02 is especially well suited for use as the IF(AV) 2 x 10 A
companion diode for IGBTs and MOSFETs. The FRED
features combine to offer designers a rectifier with trr (typical) 35 ns
lower noise and significantly lower switching losses TJ (maximum) 150 C
in both the diode and the switching transistor. These
FRED advantages can help to significantly reduce Qrr (typical) 25 nC
snubbing, component count and heatsink sizes. lRRM (typical) 1.9 A

ABSOLUTE MAXIMUM RATINGS


PARAMETER SYMBOL TEST CONDITIONS VALUES UNIT
Cathode to anode voltage VR 200 V

per leg 10
Maximum continuous forward current IF
per device 50Hz square
20 A
wave duty = , T C =115C
Single pulse forward current (Peak forward current per leg) l FSM 100
Maximum repetitive forward current (per leg) l FRM 40
Operating junction and storage temperature range T J , T Stg - 55 to + 150 C

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SEMICONDUCTOR N-D92-02 RoHS
RoHS
Nell High Power Products
ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Cathode to anode
VBR IR = 100 A 200 - -
breakdown voltage
IF = 10 A - 0.9 0.95 V
Maximum forward voltage VFM IF = 20 A - 1 -
IF = 10 A, TJ = 125 C - 0.8 -

Maximum reverse V R = V R rated - - 15


IRM A
leakage current T J = 125C, V R = V R rated - - 250
Junction capacitance CT V R = 200V - 55 - pF
Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH

DYNAMIC RECOVERY CHARACTERISTICS PERLEG(TJ = 25 C unless otherwise specified)


PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT) - 14 20
t rr
IF = 1.0 A, dIF/dt = 50 A/s, VR =30 V, TJ = 25C - - 30
Reverse recovery time ns
t rr1 TJ = 25 C - 21 -

t rr2 TJ = 125 C - 35 -
l RRM1 TJ = 25 C IF= 10A - 1.9 -
Peak recovery current dIF/dt = -200 A/s A
l RRM2 TJ = 125 C - 4.8 -
VR = 160 V
Q rr1 TJ = 25 C - 25 -
Reverse recovery charge nC
Q rr2 TJ = 125 C - 78 -

THERMAL - MECHANICAL SPECIFICATIONS PER LEG


PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature Tlead 0.063 '' from case (1.6 mm) for 10 s - - 300 C
Junction to case,
- - 1.5
single leg conduction
RthJC
Junction to case,
- - 0.7
both legs conducting
K/W
Thermal resistance,
RthJA Typical socket mount - - 40
junction to ambient
Thermal resistance,
RthCS Mounting surface, flat, smooth and greased - 0.25 -
case to heatsink
- 5.5 - g
Weight
- 0.19 - oz.

6 - 12 kgf . cm
Mounting torque
(5) - (10) (lbf . in)
Marking device Case style TO-3PB (JEDEC) D92-02

ORDERING INFORMATION TABLE

Device code N - D92 - 02

1 2 3

1 - Nell Semiconductors product

2 - FRED family, type = D92, current rating = 10A x 2,


package outline = TO-3PB

3 - Voltage rating, 02 = 200V

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SEMICONDUCTOR N-D92-02 RoHS
RoHS
Nell High Power Products

Fig.1 Maximum forward voltage drop Fig.2 Typical values of reverse current vs.
characteristics reverse voltage
lnstantaneous forward current, I F (A)

100 100

T J =150C

Reverse current, l R (A)


10
T J =125 C
10
1 T J =100 C

T J =150C
T J =125C
0.1
1 T J =25C

0.01 T J =25 C

0.1 0.001
0 0.4 0.8 1.2 1.6 2.0 0 50 100 150 200 250

Forward voltage drop, V FM (V) Reverse voltage, V R (V)

Fig.3 Typical junction capacitance vs. Fig.4 Maximum allowable case temperature vs.
reverse voltage average forward current

1000 160
Allowable case temperature ( C)
Junction capacitance, C T (pF)

150

140

100 T J =25 C 130 DC

Square wave (D = 0.50)


120 Rated V R applied

110 See note (1)

10 100
0 10 100 1000 0 3 6 9 12 15

Reverse voltage, V R (V) Average forward current, l F(AV) (A)

Fig.5 Maximum thermal impedance R th(j-c) characteristics

10
Thermal lmpedance, R th(j-c) (C/W)

P DM

t1
D = 0.50
0.1 D = 0.20 t2
D = 0.10
D = 0.05 Notes:
D = 0.02 1. Duty Factor D =t 1 /t 2.
Single pulse D = 0.01 2.Peak T J = PDM x R th(j-c) +T C
(thermal resistance) .
0.01
0.00001 0.0001 0.001 0.01 0.1 1

Rectangular pulse duration, t 1 (s)

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SEMICONDUCTOR N-D92-02 RoHS
RoHS
Nell High Power Products

Fig.6 Forward power loss characteristics Fig.7 Typical reverse recovery time vs. dl F /dt

15 50

T J =125C
Average power loss (W)

12 40 T J =25C

RMS limit
9 30

t rr (ns)
D = 0.01
D = 0.02
6 D = 0.05 20
D = 0.10
D = 0.20
3 D = 0.50 10 l F = 20A
DC l F = 10A V R = 160V
l F = 5A

0 0
0 3 6 9 12 15 100 1000

Average forward current, l F(AV) (A) dl F /dt(A/ s)

Fig.8 Typical stored charge vs. dl F /dt Fig.9 Reverse recovery parameter test circuit

250

T J =125C V R =200V
200 T J =25C
l F = 20A
l F = 10A
0.01
150 l F = 5A
Q rr (nC)

L=70H

D.U.T.
100
D
dl F /dt
adjust
50 G IRFP250
V R = 160V
S
0
100 1000

dl F /dt(A/ s)

Note
(1) Formula used:T C = T J - (Pd+Pd REV ) x R thJC ;
Pd = Forward power loss = l F(AV) x V FM at (l F(AV) /D)(see fig.6);
Pd REV = lnverse power loss = V R1 x l R (1-D); l R at V R1 = Rated V R

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SEMICONDUCTOR N-D92-02 RoHS
RoHS
Nell High Power Products

Fig.10 Reverse recovery waveform and definitions

(3)
t rr
IF
ta tb
0

(4)
Q rr
(2)
l RRM 0.5 l RRM
dl (rec)M /dt (5)

0.75 l RRM

(1) dl F /dt

(1) dl F /dt - rate of change of current (4) Q rr - area under curve defined by t rr
through zero crossing and l RRM

(2) l RRM - peak reverse recovery current t rr xl RRM


Qrr =
2
(3) t rr - reverse recovery time measured
from zero crossing point of negative (5) dl (rec)M /dt - peak rate of change of
going l F to point where a line passing current during t b portion of t rr
through 0.75 l RRM and 0.50 l RRM
extrapolated to zero current.

TO-3PB
5.0 0 . 2

15.60.4 4.80.2
2.0

1.8

9.6 2.00.1
19.90.3

4.0

3.2 0,1

2
20.0 min

4.0 max

3
+0.2 +0.2
1.05 -0.1 0.65 -0.1

5.450.1 5.450.1 1.4

common
cathode
2

1 2 3

1 3
Anode Anode
1 2 2
Common
cathode

All dimensions in millimeters

www.nellsemi.com Page 5 of 5

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