PD - 90339F
IRF350
REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768
HEXFET TRANSISTORS JANTXV2N6768
THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543]
400V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on) ID
IRF350 400V 0.300 14A
The HEXFETtechnology is the key to International
Rectifiers advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
State of the Art design achieves: very low on-state resis-
tance combined with high transconductance; superior re- TO-3
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control, Features:
very fast switching, ease of paralleling and temperature n Repetitive Avalanche Ratings
stability of the electrical parameters. n Dynamic dv/dt Rating
n Hermetically Sealed
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio n Simple Drive Requirements
amplifiers and high energy pulse circuits. n Ease of Paralleling
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25C Continuous Drain Current 14
ID @ VGS = 10V, TC = 100C Continuous Drain Current 9.0 A
I DM Pulsed Drain Current 56
PD @ TC = 25C Max. Power Dissipation 150 W
Linear Derating Factor 1.2 W/C
VGS Gate-to-Source Voltage 20 V
EAS Single Pulse Avalanche Energy 11.3 mJ
IAR Avalanche Current 14 A
EAR Repetitive Avalanche Energy 15 mJ
dv/dt Peak Diode Recovery dv/dt 4.0 V/ns
TJ Operating Junction -55 to 150
o
T STG Storage Temperature Range C
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5 (typical) g
For footnotes refer to the last page
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01/22/01
IRF350
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 400 V VGS = 0V, ID = 1.0mA
BV DSS/TJ Temperature Coefficient of Breakdown 0.46 V/C Reference to 25C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State 0.300 VGS = 10V, ID =9.0A
Resistance 0.400 VGS =10V, ID =14A
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID =250A
gfs Forward Transconductance 6.0 S( ) VDS > 15V, IDS =9.0A
IDSS Zero Gate Voltage Drain Current 25 VDS=320V, VGS=0V
250 A VDS =320V
VGS = 0V, TJ = 125C
IGSS Gate-to-Source Leakage Forward 100 VGS =20V
nA
IGSS Gate-to-Source Leakage Reverse -100 VGS =-20V
Qg Total Gate Charge 52 110 VGS =10V, ID=14A
Qgs Gate-to-Source Charge 5.0 18 nC VDS =200V
Qgd Gate-to-Drain (Miller) Charge 25 65
td(on) Turn-On Delay Time 35 VDD =200V, ID =14A,
tr Rise Time 190 RG =2.35
ns
td(off) Turn-Off Delay Time 170
tf Fall Time 130
LS + LD Total Inductance 6.1 nH Measured from the center of
drain pad to center of source
pad
Ciss Input Capacitance 2600 VGS = 0V, VDS =25V
Coss Output Capacitance 680 pF f = 1.0MHz
Crss Reverse Transfer Capacitance 250
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
IS Continuous Source Current (Body Diode) 14
A
ISM Pulse Source Current (Body Diode) 56
VSD Diode Forward Voltage 1.7 V Tj = 25C, IS =14A, VGS = 0V
t rr Reverse Recovery Time 1200 nS Tj = 25C, IF =14A, di/dt 100A/s
QRR Reverse Recovery Charge 250 c VDD 50V
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction to Case 0.83
C/W
R thJA Junction to Ambient 30 Typical socket mount
For footnotes refer to the last page
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IRF350
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
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IRF350
13 a& b
Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRF350
RD
V DS
VGS
D.U.T.
RG
+
-V DD
10V
Pulse Width 1 s
Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF350
1 5V
L D R IV E R
VD S
RG D .U .T +
V
- DD
IA S A
10V
20V
tp 0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms Same Type as D.U.T.
50K
12V .2F
QG .3F
+
10 V V
QGS QGD D.U.T. - DS
VGS
VG
3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
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IRF350
Foot Notes:
Repetitive Rating; Pulse width limited by ISD 14A, di/dt 145A/s,
maximum junction temperature. VDD 400V, TJ 150C
VDD =50V, starting TJ = 25C, Suggested RG =2.35
Peak IL = 14A, Pulse width 300 s; Duty Cycle 2%
Case Outline and Dimensions TO-204AA (Modified TO-3)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 01/01
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