2N918
HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS
DESCRIPTION
The 2N918 is a silicon planar epitaxial NPN transis-
tors in Jedec TO-72 metal case. It is designed for
low-noise VHF amplifiers, oscillators up to 1 GHz,
non-neutralized IF amplifiers and non-saturating cir-
cuits with rise and fall times of less than 2.5 ns.
TO-72
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CBO Collector-base Voltage (I E = 0) 30 V
V CEO Collector-emitter Voltage (I B = 0) 15 V
V EBO Emitter-base Voltage (I C = 0) 3 V
IC Collector Current 50 mA
Pt o t Total Power Dissipation at T amb 25 C 200 mW
at T c as e 25 C 300 mW
T s t g, T j Storage and Junction Temperature 65 to 200 C
January 1989 1/6
2N918
THERMAL DATA
R t h j- cas e Thermal Resistance Junction-case Max 584 C/W
R t h j-amb Thermal Resistance Junction-ambient Max 875 C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cutoff Current V CB = 15 V 10 nA
(I E = 0) V CB = 15 V T amb = 150 C 1 A
V (BR) CBO Collectorbase Breakdown IC = 1 A 30 V
Voltage
(I E = 0)
V CEO(s us ) Collectoremitter Sustaining IC = 3 mA 15 V
Voltage
(I B = 0)
V (BR) EBO Emitterbase Breakdown IE = 10 A 3 V
Voltage
(I C = 0)
V CE(s at) Collectoremitter Saturation IC = 10 mA IB = 1 mA 0.4 V
Voltage
V BE( sat) Baseemitter Saturation IC = 10 mA IB = 1 mA 1 V
Voltage
h FE DC Current Gain IC = 3 mA V CE = 1 V 20 50
fT Transition Frequency IC = 4 mA
f = 100 MHz V CE = 10 V 600 900 MHz
C EBO Emitterbase Capacitance IC = 0 V EB = 0.5 V 2 pF
f = 1 MHz
C CBO Collectorbase Capacitance IE = 0 f = 1 MHz
V CE = 0 1.8 3 pF
V CE = 10 V 1 1.7 pF
NF Noise Figure IC = 1 mA V CE = 6 V
R g = 400 f = 60 MHz 6 dB
Gpe Power Gain R g = 50 f = 200 MHz
IC = 6 mA V CE = 12 V 15 21 dB
P o* Output Power IC = 12 mA V CB = 10 V 30 40 mW
f = 500 MHz
Collector Efficiency IC = 12 mA V CB = 10 V
f = 500 MHz 25 %
* See test circuit.
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2N918
DC Current Gain. Transition Frequency.
Input Admittance vs. Collector Current. Forward Transadmittance vs. Collector Current.
Reverse Transadmittance vs. Collector Current. Output Admittance vs. Collector Current.
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2N918
Input Admittance vs. Frequency. Forward Transadmittance vs. Frequency.
Reverse Transadmittance vs. Frequency. Output Admittance vs. Frequency.
500 MHz Oscillator Test Circuit.
4/6
2N918
TO-72 MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 5.3 0.208
E 4.9 0.193
F 5.8 0.228
G 2.54 0.100
H 1.2 0.047
I 1.16 0.045
L 45o 45o
D A
G
I
H
E
F
L
B
0016198
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2N918
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
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