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Surface Engineering & Characterization: Dr. Ahmed Umar Munawar

The document discusses several topics related to surface engineering and characterization including: 1. Surface engineering techniques for integrated circuits like electroplating, high entropy coatings, and ion implantation. 2. Characterization tools such as low energy electron diffraction, magnetic force microscopy, and X-ray fluorescence. 3. The process of nucleation during thin film deposition, including homogeneous and heterogeneous nucleation, factors that determine island or layer growth, and equations for the change in free energy and nucleation rate.

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Tayyab Ahsan
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0% found this document useful (0 votes)
43 views

Surface Engineering & Characterization: Dr. Ahmed Umar Munawar

The document discusses several topics related to surface engineering and characterization including: 1. Surface engineering techniques for integrated circuits like electroplating, high entropy coatings, and ion implantation. 2. Characterization tools such as low energy electron diffraction, magnetic force microscopy, and X-ray fluorescence. 3. The process of nucleation during thin film deposition, including homogeneous and heterogeneous nucleation, factors that determine island or layer growth, and equations for the change in free energy and nucleation rate.

Uploaded by

Tayyab Ahsan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Surface Engineering &

Characterization
Dr. Ahmed Umar Munawar
1- Surface Engineering in integrated circuits
2- Electroplating
3- High Entropy Coatings
4- Low Energy Electron Diffraction
6- Carbonitriding
7- Ion Implantation
9- Magnetic force microscope
10- X-ray Fluoroscence

Deadline: 31st of March !


Nucleation

Nucleation can take place in the vapour phase


(Homogeneous nucleation)
Nucleation can take place on the substrate surface
(Heterogeneous nucleation)
Nucleation

γsv = γfs + γvf cosθ Young’s equation


Nucleation

For Island growth, θ >0


Therefore, γsv < γfs + γvf

For layer growth, θ = 0

γsv = γfs + γvf

For S.K growth,

γsv > γfs + γvf cosθ


Change in free energy accompanying condensation is:
ΔGV = -kT/Ώ ln (Pv / Ps)
Pv is the pressure of the supersaturated gas
Ps is the pressure at the substrate surface
Change in free energy accompanying
condensation is:
ΔGV = -kT ln (1 + S)
S = Supersaturation = (Pv – Ps) / Ps
Without supersaturation, ΔGV is zero and
nucleation is impossible !
Nucleation Rate

Nucleation Rate is given by:


N = N*A*ω (Nuclei/ cm2-sec )
N*= equilibrium conc. (per cm2) of stable nuclei
ω = rate at which atoms impinge (per cm2-sec)
onto the nuclei of critical area A*

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