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NTE469-Replacemet For J113

This document provides information on the NTE469 silicon n-channel JFET transistor. It is intended for use in applications such as analog switches, choppers, and commutators, and comes in a TO92 type package. Absolute maximum ratings and electrical characteristics are specified, including maximum voltages, currents, power dissipation, and temperature ranges. Key parameters such as gate-source cutoff voltage, drain cutoff current, and on/off capacitances are also listed.

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139 views2 pages

NTE469-Replacemet For J113

This document provides information on the NTE469 silicon n-channel JFET transistor. It is intended for use in applications such as analog switches, choppers, and commutators, and comes in a TO92 type package. Absolute maximum ratings and electrical characteristics are specified, including maximum voltages, currents, power dissipation, and temperature ranges. Key parameters such as gate-source cutoff voltage, drain cutoff current, and on/off capacitances are also listed.

Uploaded by

rdbasses
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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NTE469

Silicon N−Channel JFET Transistor


Chopper, High Speed Switch
TO92 Type Package
D
Applications:
G
D Analog Switches
D Choppers S
D Commutators

Absolute Maximum Ratings:


Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Drain−Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.68mW/5C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
Lead Temperature (During Soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +3005C

Electrical Characteristics: (TA = +255C unless otherwise specified)


Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Gate−Source Breakdown Voltage V(BR)GS IG = 1 A, VDS = 0 35 − − V
S
Gate Reverse Current IGSS VGS = −15V, VDS = 0 − − −1.0 nA
Gate−Source Cutoff Voltage VGS(off) VDS = 5V, ID = 1 A −0.5 − −3.0 V
Drain Cutoff Current ID(off) VDS = 5V, VGS = −10V − − 1.0 nA
ON Characteristics
Zero−Gate Voltage Drain Current IDSS VDS = 15V, VGS = 0, Note 1 2.0 − − mA
Static Drain−Source ON Resistance rDS(on) VDS = 0.1V − − 100 5
Drain−Gate ON Capacitance Cdg(on) VDS = VGS = 0, f = 1MHz − − 28 pF
Source−Gate ON Capacitance Csg(on) VDS = VGS = 0, f = 1MHz − − 28 pF
Drain−Gate OFF Capacitance Cdg(off) VGS = −10V, f = 1MHz − − 5 pF
Source−Gate OFF Capacitance Csg(off) VGS = −10V, f = 1MHz − − 5 pF

Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 3%.


Rev. 10−13
.135 (3.45) Min

.210
(5.33)
Max
Seating Plane

.500 .021 (.445) Dia Max


(12.7)
Min

D S G

.100 (2.54)

.050 (1.27)

.165
(4.2)
Max

.105 (2.67) Max


.105 (2.67) Max
.205 (5.2) Max

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