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College of Engineering Putrajaya Campus Test 2: Instructions To Candidates

This document is a test paper for an electronics analysis and design course taken in 2009. It contains 3 questions related to circuit analysis, including determining current, voltage, and transistor parameters for various circuits. Students are instructed to show their work and answer all questions in the test booklet. Formulas relevant to the course are also provided in an appendix.

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56 views4 pages

College of Engineering Putrajaya Campus Test 2: Instructions To Candidates

This document is a test paper for an electronics analysis and design course taken in 2009. It contains 3 questions related to circuit analysis, including determining current, voltage, and transistor parameters for various circuits. Students are instructed to show their work and answer all questions in the test booklet. Formulas relevant to the course are also provided in an appendix.

Uploaded by

zawir
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOC, PDF, TXT or read online on Scribd
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COLLEGE OF ENGINEERING

PUTRAJAYA CAMPUS
TEST 2

SEMESTER I 2009 / 2010

PROGRAMME : Bachelor of Electrical Power Engineering (Honours)


Bachelor of Electrical and Electronics Engineering (Honours)
SUBJECT CODE : EEEB143

SUBJECT : Electronics Analysis & Design I

DATE :9 Sept 2009

Name: ID No.:

Section: A/B

INSTRUCTIONS TO CANDIDATES:

1. This paper contains THREE (3) questions. Answer ALL.

2. Write all answers in this question booklet itself.

3. Use of pencil is not allowed.

THIS QUESTION PAPER CONSISTS OF 3 PRINTED PAGES INCLUDING THIS


COVER PAGE.

QUESTION 1 [10 marks]


Page 1 of 4
EEEB143, TET 2 Semester 1 2009/2010

In the circuit shown in Figure 1, the values of measured parameters are


Shown. Determine the following;
a. IE
b. IC
c. VCE
d. β
e. α

Figure 1 Figure 2

QUESTION 2[10 marks]

Assume β =100, VA = ∞, R1=10kΏ, R2= 50kΏ, for the circuit in Figure 2, Determine the
following parameters;
a. VTH
b. RTH
c. IBQ
d. ICQ
e. VEC
f. Plot the Q point on the dc load line
Page 2 of 4
EEEB143, TET 2 Semester 1 2009/2010

Figure 2

QUESTION 3[10 marks]

Referring to Figure 2, draw the small signal equivalent circuit and determine the small
signal r0, V0, , VS and voltage gain, (AV).

-END OF QUESTION PAPER-

Page 3 of 4
EEEB143, TET 2 Semester 1 2009/2010

APPENDIX
EEEB143 FORMULAS

1. ni = BT3/2 exp(-Eg/(2kT)) Small-signal transistor models:


2. n0p0 = ni2
3. Jdrift = (enn + enp)E
4. Vbi = kT ln [ (Na Nd) / ni2 )
5. iD = IS [exp(VD/VT) - 1]
6. IE = IC + IB
7. IC = IB
8.  = (1+)-1
9. VBE(on) = 0.7 V
10. r = VT/IBQ, gm=ICQ/VT ro=VA/ICQ
11. Av=Vo/Vi
12. ID = Kn [ 2 (VGS - VTN ).VDS - V 2DS ]
13. ID = Kp [ 2 (VSG + VTP ).VSD - V2SD ]
14. ID = Kn (VGS - VTN )2
15. ID = Kp (VSG + VTP )2
16. VDS(sat) = VGS - VTN
17. VSD(sat) = VSG + VTP
18. ro = [IDQ]-1
19. gm = 2Kn (VGS - VTN)
vGS 2
20. ID = IDSS [ 1 - ]
VP
21. ro = [ IDQ ]-1
2 I DSS vGS
22. gm = ( ) [1 - ]
 VP VP
23. VDS(sat) = vGS - VP
24. VSD(sat) = VP - vGS

CONSTANTS
Material Eg [eV] B [cm-3 K-3/2]
1. Silicon, Si 1.12 5.23 x 1015
2. Galium Arsenide, GaAs 1.4 2.10 x 1014
3. Germanium, Ge 0.66 1.66 x 1015

GENERAL CONSTANTS AND CONVERSION FACTORS


Constant Symbol Value
Angstrom Å 10-10 m
Boltzmann's constant k 1.38 x 1023 J/K, 8.6 x 10-5 eV/K
Electron-volt eV 1.6 x 10-19 J
Electronic charge e or q 1.6 x 10-19 C
Thermal Voltage VT kT/e or 0.026V at 300K

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