Lecture Outline

ESE 568: Mixed Signal Design and

!  MOSFET (Large Signal)
Modeling "  Physical Device
"  Device Models
Lec 2: September 5th, 2018 "  Examples
MOS Models: Large/Small Signal "  2nd order effects
!  Small Signal Model
"  Resistive components
"  Capacitive Components

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.

Najmabadi, UCSD) Penn ESE 568 Fall 2018 - Khanna 2

The Operational Basis of a FET

MOSFET

Device and Models

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.

Penn ESE 568 Fall 2018 - Khanna 3 Najmabadi, UCSD) 4

The Operational Basis of a FET The Operational Basis of a FET

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F. Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.
Najmabadi, UCSD) 5 Najmabadi, UCSD) 6

1
 The Operational Basis of a FET MOSFET Physical Structure

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F. Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.
Najmabadi, UCSD) 7 Najmabadi, UCSD) 8

nMOS IV Characteristics nMOS IV Characteristics

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F. Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.
Najmabadi, UCSD) 9 Najmabadi, UCSD) 10

nMOS IV Characteristics nMOS IV Characteristics

Only
Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F. valid for vds near 0 Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.
Najmabadi, UCSD) 11 Najmabadi, UCSD) 12

2
 nMOS IV Characteristics nMOS IV Characteristics

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F. Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.
Najmabadi, UCSD) 13 Najmabadi, UCSD) 14

nMOS IV Characteristics Transistor IV curves

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.

Najmabadi, UCSD) 15 Penn ESE 568 Fall 2018 - Khanna 16

Channel Length Modulation Channel Length Modulation

Channel-length Modulation Channel-length Modulation

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F. Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.
Najmabadi, UCSD) 17 Najmabadi, UCSD) 18

3
 Body Effect The Operational Basis of a FET

Not exactly
Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F. Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.
Najmabadi, UCSD) 19 Najmabadi, UCSD) 20

The Operational Basis of a FET Weak Inversion (or Cut-off or Subthreshold)

!  Transition from insulating to conducting is non-
linear, but not abrupt
!  Current does flow
"  But exponentially dependent on VGS

Weak Inversion Strong Inversion

Not exactly
Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.
Najmabadi, UCSD) 21 Penn ESE 568 Fall 2018 – Khanna 22

Weak Inversion (or Cut-off or Subthreshold) Subthreshold Slope

!  Exponent in VGS determines how steep the turnon is
" kT %
S = n$ ' ln(10)
If VGS < Vth , # q&
"  Units: V/dec
! W $ # GS th & !
! V −V $ ! VDS $ $
# & "  Every S Volts, IDS is scaled by factor of 10
I DS = I S # & e" nkT /q % #1− e"−kT /q % & (1+ λVDS ) €
"L% # &
" %

S
!  Current is from the parasitic NPN BJT transistor
when gate is unbiased and there is no conducting
channel

Penn ESE 568 Fall 2018 – Khanna 23 Penn ESE 568 Fall 2018 – Khanna 24

4
 MOS IV Characteristic Equations pMOS Device
Not exactly, subT current flows

[1+λ(vDS−VOV)]

[1+λ(vDS−VOV)]

Simplified for hand analysis

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F. Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.
Najmabadi, UCSD) 25 Najmabadi, UCSD) 26

MOS IV Characteristic Equations nMOS Exercise

Not exactly, subT current flows
!  http://www-g.eng.cam.ac.uk/mmg/teaching/
linearcircuits/mosfet.html

[1+λ(vDS−VOV)]

[1+λ(vDS−VOV)]

Simplified for hand analysis

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.
Najmabadi, UCSD) 27 Penn ESE 568 Fall 2018 - Khanna 28

Example: Operating Regions 2nd Order Effects

!  Assume VTHn = -VTHp = 0.5V, µnCox = 50µA/V2, µpCox = !  Mobility Degradation with Normal Field
20µA/V2, λ = 0, and M1 and M2 have the same value of W "  Vertical field
and L (are same size)
"  Triode and saturation region
!  Velocity Saturation
"  Lateral field
"  Saturation region
!  Short Channel Effects 
!  Determine operating region for M1 and M2 assuming:
"  Vbias = 1.2
"  Vbias = 0.2
"  Vbias = 0.65

Penn ESE 568 Fall 2018 - Khanna 29 Penn ESE 568 Fall 2018 - Khanna 30

5
 Mobility Degradation with Normal Field Mobility Degradation with Normal Field
!  Usually modeled empirically !  High gate-to-source voltage
!  Affects both saturation and triode regions
"  Strong inversion only µ n0
µ n (eff ) ≈
1+ θ (VGS −VT )

!  θ= mobility modulation factor (empirical)

(VDS small)

Penn ESE 568 Fall 2018 - Khanna 31 Penn ESE 568 Fall 2018 – Khanna 32

Velocity Saturation Velocity Saturation

!  Affects saturation region in strong inversion
!  Once velocity saturates:
Mobility degradation due to lateral electric field (VDS/Leff)

!  Long Channel !  Short Channel

Penn ESE 568 Fall 2018 – Khanna 33 Penn ESE 570 Spring 2018 – Khanna 34

Short Channel Effects – VT Reduction Short Channel Effects – VT Reduction

G G G G
S D S D S D S D

n+ n+ xj n+ n+ n+ n+ xj n+ n+
QB0 QB0
pn+ Leff QB0(sc) pn+ Leff QB0(sc)
Leff pn+ Leff pn+
depletion depletion depletion depletion
region VGS induced region VGS induced
region region
depletion depletion
region region

VT0 (short channel) = VT0 - ΔVT0 VT0 (short channel) = VT0 - ΔVT0

Penn ESE 568 Fall 2018 – Khanna 35 Penn ESE 568 Fall 2018 – Khanna 36

6
 Short Channel Effects - DIBL MOS IV Characteristic Equations
Not exactly, subT current flows
!  Drain Induced Barrier Lowering
"  VT Reduction with Drain Bias

[1+λ(vDS−VOV)]

[1+λ(vDS−VOV)]

Simplified for hand analysis

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.
Penn ESE 568 Fall 2018 - Khanna 37 Najmabadi, UCSD) 38

Formal Derivation of Small Signal Model

Small Signal Models

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.

Najmabadi, UCSD) 40

Formal Derivation of Small Signal Model Formal Derivation of Small Signal Model

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F. Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.
Najmabadi, UCSD) 41 Najmabadi, UCSD) 42

7
 MOS Small Signal Model MOS Small Signal Model

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F. Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.
Najmabadi, UCSD) 43 Najmabadi, UCSD) 44

MOS Small Signal Model MOS Small Signal Model

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F. Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.
Najmabadi, UCSD) 45 Najmabadi, UCSD) 46

MOS Small Signal Model MOS Small Signal Model

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F. Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.
Najmabadi, UCSD) 47 Najmabadi, UCSD) 48

8
 MOS Small Signal Model MOS Small Signal Model

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F. Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.
Najmabadi, UCSD) 49 Najmabadi, UCSD) 50

MOS Small Signal Model MOS Small Signal Model

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F. Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.
Najmabadi, UCSD) 51 Najmabadi, UCSD) 52

MOS Small Signal Model Back Gate Small Signal Model

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.

Najmabadi, UCSD) 53 Penn ESE 568 Fall 2018 - Khanna 54

9
 Back Gate Small Signal Model Weak Inversion Small Signal Model

vds
id = gm ⋅ vgs + + gmb ⋅ vsb
ro

gs = gmb

Penn ESE 568 Fall 2018 - Khanna 55 Penn ESE 568 Fall 2018 - Khanna 56

Weak Inversion Small Signal Model pMOS Small Signal Model

Penn ESE 568 Fall 2018 – Khanna (Slides adapted from F.

Penn ESE 568 Fall 2018 - Khanna 57 Najmabadi, UCSD) 58

MOSFET Parasitic Capacitance Capacitance Roundup

!  Cgs=CGSi+CGSO
!  Cgd=CGDi+CGDO
!  Cgb=CGBO
!  Csb=Cdiff
!  Cdb=Cdiff
!  Any two conductors separated by an insulator form
a parallel-plate capacitor intrinsic
!  Two types extrinsic
"  Extrinsic – Outside the box (e.g. junction, overlap)
"  Intrinsic – Inside the box (e.g. gate-to-channel)
Penn ESE 568 Fall 2018 – Khanna 59 Penn ESE 568 Fall 2018 – Khanna 60

10
 CMOS Device Capacitance CMOS Device Capacitance

Penn ESE 568 Fall 2018 - Khanna 61 Penn ESE 568 Fall 2018 - Khanna 62

Small Signal Capacitance Roundup Small Signal Capacitance Roundup

!  Textbook pgs 41 and 42 !  Textbook pgs 41 and 42
Assumes Saturation Assumes Saturation

Penn ESE 568 Fall 2018 - Khanna 63 Penn ESE 568 Fall 2018 - Khanna 64

Lecture Outline Admin

!  MOSFET has modes of operation !  HW 1 due Sunday at midnight in Canvas
"  Subthreshold !  Diagnostic Quiz solutions up after class
"  Triode
"  Saturation
!  Small Signal Model
"  Enables hand analysis
"  Resistive components
"  gm, ro
"  Capacitive Components
"  Dependent on modes of operation, but well defined model for
saturation, which is where we want to design our transistors to be

Penn ESE 568 Fall 2018 - Khanna 65 Penn ESE 568 Fall 2018 – Khanna 66

11