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Product
STM8300
S a mHop Microelectronics C orp. Ver 1.0

Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)

V DSS ID R DS(ON) (m Ω) Max V DSS ID R DS(ON) (m Ω) Max

46 @ VGS=10V 56 @ VGS=-10V
30V 5.3A -30V -4.7A
65 @ VGS=4.5V 90 @ VGS=-4.5V

D2 5 4 G2

D2 6 3 S2

D1 7 2 G1
S O-8
D1 8 1 S1
1

ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )

Symbol Parameter N-Channel P-Channel Units
VDS Drain-Source Voltage 30 -30 V
VGS Gate-Source Voltage ±20 ±20 V
a TA=25°C 5.3 -4.7 A
ID Drain Current-Continuous
TA=70°C 4.2 -3.8 A
IDM b
-Pulsed 19 -17 A
a TA=25°C 2.0 W
PD Maximum Power Dissipation
TA=70°C 1.28 W
Operating Junction and Storage
TJ, TSTG -55 to 150 °C
Temperature Range

THERMAL CHARACTERISTICS
a
R JA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

Details are subject to change without notice. Jul,31,2008

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STM8300
Ver 1.0

N-Channel ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 V
IDSS Zero Gate Voltage Drain Current VDS=24V , VGS=0V 1 uA
IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ±100 nA

ON CHARACTERISTICS
VGS(th) Gate Threshold Voltage VDS=VGS , ID=250uA 1 1.6 3 V
VGS=10V , ID=5.3A 38 46 m ohm
RDS(ON) Drain-Source On-State Resistance
VGS=4.5V , ID=4.5A 48 65 m ohm
gFS Forward Transconductance VDS=5V , ID=5.3A 10 S
c
DYNAMIC CHARACTERISTICS
CISS Input Capacitance 310 pF
COSS VDS=15V,VGS=0V
Output Capacitance 73 pF
f=1.0MHz
CRSS Reverse Transfer Capacitance 44 pF
c
SWITCHING CHARACTERISTICS
tD(ON) Turn-On Delay Time VDD=15V 7.5 ns
tr Rise Time ID=1A 9.5 ns
tD(OFF) Turn-Off Delay Time VGS=10V 16 ns
RGEN=6 ohm ns
tf Fall Time 13
VDS=15V,ID=5.3A,VGS=10V 5.3 nC
Qg Total Gate Charge
VDS=15V,ID=5.3A,VGS=4.5V 2.8 nC
Qgs Gate-Source Charge VDS=15V,ID=5.3A, 0.9 nC
Qgd Gate-Drain Charge VGS=10V 1.2 nC

DRAIN-SOURCE DIODE CHARACTERISTICS

IS Maximum Continuous Drain-Source Diode Forward Current 1 A
b
VSD Diode Forward Voltage VGS=0V,IS=1A 0.79 1.2 V

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STM8300
Ver 1.0

P-Channel ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 V
IDSS Zero Gate Voltage Drain Current VDS=-24V , VGS=0V -1 uA
IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ±100 nA

ON CHARACTERISTICS
VGS(th) Gate Threshold Voltage VDS=VGS , ID=-250uA -1.0 -1.8 -3.0 V
VGS=-10V , ID=-4.7A 46 56 m ohm
RDS(ON) Drain-Source On-State Resistance
VGS=-4.5V , ID=-3.7A 68 90 m ohm
gFS Forward Transconductance VDS=-5V , ID=-4.7A 7.5 S
c
DYNAMIC CHARACTERISTICS
CISS Input Capacitance 520 pF
VDS=-15V,VGS=0V
COSS Output Capacitance 125 pF
f=1.0MHz
CRSS Reverse Transfer Capacitance 78 pF
c
SWITCHING CHARACTERISTICS
tD(ON) Turn-On Delay Time VDD=-15V 7.5 ns
tr Rise Time ID=-1A 12.4 ns
tD(OFF) Turn-Off Delay Time VGS=-10V 62 ns
tf Fall Time RGEN=6 ohm 37 ns
VDS=-15V,ID=-4.7A,VGS=-10V 10.3 nC
Qg Total Gate Charge
VDS=-15V,ID=-4.7A,VGS=-4.5V 5.2 nC
Qgs Gate-Source Charge VDS=-15V,ID=-4.7A, 1.1 nC
Qgd Gate-Drain Charge VGS=-10V 2.8 nC

DRAIN-SOURCE DIODE CHARACTERISTICS

IS Maximum Continuous Drain-Source Diode Forward Current -1 A
b
VSD Diode Forward Voltage VGS=0V,IS=-1A -0.77 -1.2 V

Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width < _ 2%.
c.Guaranteed by design, not subject to production testing.

Jul,31,2008

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STM8300
Ver 1.0

N-Channel
25 15
VG S =10V VG S =4.5V
VG S =4V
20 12
ID, Drain Current(A)

ID, Drain Current(A)

15 VG S =3.5V 9
25 C

10 6
VG S =3V
T j=125 C
5 VG S =2.5V 3
-55 C
0 0
0 0.5 1 1.5 2 2.5 3 0.0 0.7 1.4 2.1 2.8 3.5 4.2

V DS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V)

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

78 2.0

65 1.8 V GS =4.5V
R DS(on), On-Resistance

V G S =4.5V I D =4.5A
52 1.6
R DS(on)(m Ω)

Normalized

39 1.4
V G S =10V
26 1.2 V GS =10V
I D =5.3A
13 1.0

0 0.8
1 5 10 15 20 25 0 25 50 75 100 125 150
T j ( °C )
I D, Drain Current(A) Tj, Junction Temperature(° C )

Figure 3. On-Resistance vs. Drain Current Figure 4. On-Resistance Variation with Drain
and Gate Voltage Current and Temperature

1.6 1.15
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage

V DS =V G S I D =250uA
1.4 I D =250uA 1.10
BVDSS, Normalized
Vth, Normalized

1.2 1.05

1.0 1.00

0.8 0.95

0.6 0.90

0.4 0.85
-55 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

Tj, Junction Temperature( ° C ) Tj, Junction Temperature(° C )

Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation

with Temperature with Temperature
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STM8300
Ver 1.0

90 20
I D =5.3A

Is, Source-drain current(A)

75
10
RDS(on)(m Ω)

60 T J = 125 C

45 25 C
25 C
30 75 C
T J = 125 C 75 C

15

0 1.0
0 2 4 6 8 10 0 0.3 0.6 0.9 1.2 1.5
V GS, Gate-to-Source Voltage(V) V SD, Body Diode Forward Voltage(V)

Figure 7. On-Resistance vs. Figure 8. Body Diode Forward Voltage

Gate-Source Voltage Variation with Source Current

600 10
V GS, Gate to Source Voltage(V)

500 VDS=15V
8
ID=5.3A
C, Capacitance(pF)

400
Ciss 6
300
4
200
Coss 2
100
Crss
0 0
0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8
V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC)
Figure 9. Capacitance Figure 10. Gate Charge

250 70

it
10 L im
I D, Drain Current(A)

100 ) 10
ON 0u
Switching Time(ns)

( s
60 T D(off)
RD
S 1m
s
Tr
10
ms
Tf 10
10 0m
s
T D(on) 1 DC

V G S =10V
V DS =15V ,ID=1A
1 0.1 S ingle P ulse
V G S =10V
T A =25 C
1 6 10 60 100 300 600 0.1 1 10 30 50
Rg, Gate Resistance( Ω) V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area

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STM8300
Ver 1.0

V ( BR )D S S
15V
tp

L D R IVE R
VDS

RG D .U .T +
- VD D
IA S A
20V
tp 0.0 1 IAS

Unclamped Inductive Test Circuit Unclamped Inductive Waveforms

F igure 13a. F igure 13b.

10
Normalized Transient
Thermal Resistance

0.5
1
0.2

0.1 P DM
0.05 t1
0.1 t2
0.02
1. R ӰJ A (t)=r (t) * R ӰJ A
0.01 Single Pulse 2. R ӰJ A =S ee Datas heet
3. T J M-T A = P DM* R ӰJ A (t)
4. Duty C ycle, D=t1/t2
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve

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STM8300
Ver 1.0

P-Channel
15 15
VGS=4V
VGS=10V
12 12
-ID, Drain Current(A)

-I D, Drain Current(A)
VGS=3.5V
9 9
125 C
6 6
VGS=3V
25 C
3 3
-55 C
0 0
0 0.5 1 1.5 2 2.5 3 0 0.9 1.8 2.7 3.6 4.5 5.4

-V DS, Drain-to-Source Voltage(V) -V GS, Gate-to-Source Voltage(V)

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

120 1.5

100 1.4 VGS=-4.5V

R DS(on), On-Resistance

ID=-3.7A
80 V G S =-4.5V 1.3
R DS(on)(m Ω)

Normalized

60 VGS=-10V
1.2
ID=-4.7A

40 V G S =-10V 1.1

20 1.0

1 0
1 3 6 9 12 15 0 25 50 75 100 125 150
T j ( °C )
-I D, Drain Current(A) Tj, Junction Temperature( ° C )

Figure 3. On-Resistance vs. Drain Current Figure 4. On-Resistance Variation with Drain
and Gate Voltage Current and Temperature

1.2 1.3
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage

VDS=VGS I D =-250uA
1.1 1.2
ID=-250uA
BVDSS, Normalized

1.0
Vth, Normalized

1.1
0.9
1.0
0.8
0.9
0.7

0.6 0.8

0.5 0.7
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature( ° C ) Tj, Junction Temperature(° C )

Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation

with Temperature with Temperature
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STM8300
Ver 1.0

120 20.0
I D= - 4 . 7 A

-Is, Source-drain current(A)

100
10.0
80
R DS(on)(m Ω)

125 C
60 125 C
75 C
25 C
40 25 C
75 C
20

0 1.0
0 2 4 6 8 10 0 0.3 0.6 0.9 1.2 1.5

-VGS, Gate-to-Source Voltage(V) -V SD, Body Diode Forward Voltage(V)

Figure 7. On-Resistance vs. Figure 8. Body Diode Forward Voltage

Gate-Source Voltage Variation with Source Current

900 10
-VGS, Gate to Source Voltage(V)

750 V DS= - 1 5 V
8 I D= - 4 . 7 A
C, Capacitance(pF)

600
Ciss
6
450
4
300
Coss
150
2
Crss
0 0
0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16
V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC)
Figure 9. Capacitance Figure 10. Gate Charge

250 70

it
-ID, Drain Current(A)

100 10 im
)L 10
ON
T D(off)
Switching Time(ns)

60 Tr 0u
S( s
Tf
RD 1m
s
10
1 0 ms
10 T D(on) 0m
1 DC
s

V D S = -15V,I D=-1A
V G S =10V
1 0.1 S ingle P ulse
V G S = -10 V
T A =25 C
1 6 10 60 100 300 600 0.1 1 10 30 50

Rg, Gate Resistance(Ω) -V DS, Drain-Source Voltage(V)

Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area

Jul,31,2008

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STM8300
Ver 1.0

V ( BR )D S S
15V
tp

L D R IVE R
VDS

RG D .U .T +
- VD D
IA S A
20V
tp 0.0 1 IAS

Unclamped Inductive Test Circuit Unclamped Inductive Waveforms

F igure 13a. F igure 13b.

10
Normalized Transient
Thermal Resistance

0.5
1
0.2

0.1
P DM
0.05 t1
0.1 t2
0.02
1. RthJA (t)=r (t) * R th JA
0.01 2. R thJA=See Datasheet
Single Pulse 3. TJM-TA = PDM* R thJA (t)
4. Duty Cycle, D=t1/t2
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve

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STM8300
Ver 1.0

PACKAGE OUTLINE DIMENSIONS

SO-8

E
D

0.015X45±
C
A

0.008
TYP.
A1

e B
0.05 TYP. 0.016 TYP.
H

MILLIME T E R S INC HE S
S Y MB OLS
MIN MAX MIN MAX
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
D 4.80 4.98 0.189 0.196
E 3.81 3.99 0.150 0.157
H 5.79 6.20 0.228 0.244
L 0.41 1.27 0.016 0.050
0± 8± 0± 8±

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STM8300
Ver 1.0

SO-8 Tape and Reel Data

SO-8 Carrier Tape
P1

D1 P2
A

E1
E2

E
B0

A0 D0 P0 A

T TERMINAL NUMBER 1

SECTION A-A

K0 FEEDING DIRECTION

unit:р
PACKAGE A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T

SOP 8N ӿ1.5 12.0

6.50 5.25 2.10 ӿ1.55 1.75 5.5 8.0 4.0 2.0 0.30
²0.15 +0.3 ²0.10 ²0.10 ²0.013
150п ²0.10 ²0.10 (MIN) ²0.10 ²0.10 ²0.10 ²0.10
- 0.1

SO-8 Reel
W1

S
G
N

K
M
V

R
H

W
UNIT:р

TAPE SIZE REEL SIZE M N W W1 H K S G R V

12 р ӿ330 330 62 12.4 16.8 ӿ12.75 2.0

² 1 ²1.5 + 0.2 - 0.4 + 0.15 ²0.15

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