Course: B.Sc.

Applied Physical Science (Computer Science)

Year & Sem.: Ist Year, Sem - IInd
Subject: Electronics
Paper No.: V
Paper Title: Analog Circuits
Lecture No.: 13
Lecture Title: Analog Circuits - JFET Biasing

Script

Hello friends in the previous lecture we discussed about the Field-effect transistors being uni-polar device
having three terminals namely source, drain, and gate. The JFET operates with a reverse-biased pn
junction with high input resistance due to the reverse-biased gate-source junction. FET is called a square-
law device because of the relationship of to the square of a term containing  . In today’s lecture we
shall discuss and analyze JFET biasing, describe self-bias and the Q-point of a self-biased JFET,
graphically analyze a self-biased and voltage-divider biased JFET, discuss Q-point stability of JFET, and
finally talk about Ohmic regions.

JFET BIASING

Using some of the JFET parameters discussed previously, you will now see how to dc-bias JFETs. Just as
with the BJT, the purpose of biasing is to select the proper dc gate-to-source voltage to establish a desired
value of drain current and, thus, a proper Q-point. Three types of bias are self-bias, voltage-divider bias,
and current-source bias.

Self-Bias

Self-bias is the most common type of JFET bias. Recall that a JFET must be operated such that the gate-
source junction is always reverse-biased. This condition requires a negative for an n-channel JFET
and a positive for a p-channel JFET. This can be achieved using the self-bias arrangements shown in
figure here.
The gate resistor, , does not affect the bias because it has essentially no voltage drop across it; and
therefore the gate remains at 0 V. is necessary only to force the gate to be at 0 V and to isolate an ac
signal from ground in amplifier applications.

For the n-channel JFET as shown in the figure, produces a voltage drop across and makes the source
positive with respect to ground. Since   and  0, then = . The gate-to-source voltage is then
given by

Thus,

For the p-channel JFET, shown in part (b) of the figure the current through produces a negative
voltage at the source, making the gate positive with respect to the source. Therefore, since    ,

Keep in mind that analysis of the p-channel JFET is the same except for opposite-polarity voltages. The
drain voltage with respect to ground is determined as follows:

Since  = , the drain-to-source voltage is

Setting the Q-Point of a Self-Biased JFET
The basic approach to establishing a JFET bias point is to determine for a desired value of or vice
versa. Then calculate the required value of using the following relationship. The vertical lines indicate
an absolute value.

For a desired value of  , can be determined in either of two ways: from the transfer characteristic
curve for the particular JFET or, more practically, from this equation

≅  1

And values are taken from the JFET datasheet. The next two examples illustrate these
procedures.

Determine the value of required to self-bias an n-channel JFET that has the transfer characteristic
curve shown in figure at 5

From the graph, 6.25     5 .

5
800Ω
6.25
In the second example we are to determine the value of required to self-bias a p-channel JFET with
datasheet values of 25     15 . is to be 5V.

In order to calculate we use this equation

≅  1

Substituting the given values in equation, we get

5
≅   25 1
15

≅   25 1 0.333

11.1

Now we determine  using the equation as given here,

5
450Ω
11.1

Graphical Analysis of a Self-Biased JFET

You can use the transfer characteristic curve of a JFET and certain parameters to determine the Q-point of
a self-biased circuit. A circuit and its transfer characteristic curve are shown here in figure.
To determine the Q-point of the circuit, a self-bias dc load line is established on the graph as follows.
First, calculate   when 0.

0 470 0

This establishes a point at the origin on the graph. Next, calculate  when  . From the curve
we can see that  10 .

So,

10 470 4.7

This establishes a second point on the graph. Now, with two points, the load line can be drawn on the
transfer characteristic curve as shown in this figure.

The point where the load line intersects the transfer characteristic curve is the Q-point of the circuit as
shown, where  5.07     2.3 . For increased Q-point stability, the value of  in the
self-bias circuit is increased and connected to a negative supply voltage. This is sometimes called dual-
supply bias.

Voltage-Divider Bias
An n-channel JFET with voltage-divider bias is shown in figure.
The voltage at the source of the JFET must be more positive than the voltage at the gate in order to keep
the gate-source junction reverse-biased.

The source voltage is

The gate voltage is set by resistors R1 and R2 as expressed by the following equation using the voltage-
divider formula where

The gate-to-source voltage is

And the source voltage is

The drain current can be expressed as

Substituting for  ,
Graphical Analysis of a JFET with Voltage-Divider Bias
An approach similar to the one used for self-bias can be used with voltage-divider bias to graphically
determine the Q-point of a circuit on the transfer characteristic curve.

In a JFET with voltage-divider bias when  0, is not zero, as in the self-biased case, because the
voltage divider produces a voltage at the gate independent of the drain current. The voltage-divider dc
load line is determined as follows.

For  0,

0 0V

0V

Therefore, one point on the line is at  0 and  .

For  0,

A second point on the line is at  ⁄ and  0. The point at which the load line intersects the
transfer characteristic curve is the Q-point.

Q-Point Stability
Unfortunately, the transfer characteristic of a JFET can differ considerably from one device to another of
the same type. If, for example, a 2N5459 JFET is replaced in a given bias circuit with another 2N5459,
the transfer characteristic curve can vary greatly, as illustrated in figure.
 In this case, the maximum  is 16mA and the minimum  is 4mA. Likewise, the maximum 
is -8V and the minimum  is -2V. This means that if you have a selection of 2N5459s and you
randomly pick one out, it can have values anywhere within these ranges.

If a self-bias dc load line is drawn as illustrated in figure here,

The same circuit using a 2N5459 can have a Q-point anywhere along the line from Q1, the minimum bias
point, to Q2, the maximum bias point. Accordingly, the drain current can be any value between 
and  , as shown by the shaded area. This means that the dc voltage at the drain can have a range of
values depending on  . Also, the gate-to-source voltage can be any value between  and  , as
indicated.

Figure here illustrates Q-point stability for a self-biased JFET and for a JFET with voltage-divider bias.
With voltage-divider bias, the dependency of  on the range of Q-points is reduced because the slope of
the load line is less than for self-bias for a given JFET. Although  varies quite a bit for both self-bias
and voltage-divider bias,  is much more stable with voltage-divider bias.

Current-Source Bias
Current-source bias is a method for increasing the Q-point stability of a self-biased JFET by making the
drain current essentially independent of  . This is accomplished by using a constant-current source in
series with the JFET source, as shown in figure.
In this circuit, a BJT acts as the constant-current source because its emitter current is essentially constant
if  ≫ . A FET can also be used as a constant-current source. As you can see in part (b) figure,  
remains constant for any transfer characteristic curve, as indicated by the horizontal load line.

THE OHMIC REGION

The ohmic region is the portion of the FET characteristic curves in which Ohm’s law can be applied.
When properly biased in the ohmic region, a JFET exhibits the properties of a variable resistance, where
the value of resistance is controlled by  . After completing this section, you should be able to

Discuss the ohmic region on a JFET characteristic curve

Calculate slope and drain-to-source resistance

Explain how a JFET can be used as a variable resistance

Discuss JFET operation with the Q-point at the origin, and

Calculate trans-conductance

As shown on a typical set of curves in figure, the ohmic region extends from the origin of the
characteristic curves to the break point of the  0 curve in a roughly parabolic shape.
The characteristic curves in this region have a relatively constant slope for small values of  . The slope
of the characteristic curve in the ohmic region is the dc drain-to-source conductance  of the JFET.

The JFET as a Variable Resistance

A JFET can be biased in either the active region or the ohmic region. JFETs are often biased in the ohmic
region for use as a voltage-controlled variable resistor. The control voltage is  , and it determines the
resistance by varying the Q-point. To bias a JFET in the ohmic region, the dc load line must intersect the
characteristic curve in the ohmic region, as illustrated in this figure.
To do this in a way that allows  controlling  , the dc saturation current is set for a value much less
than  so that the load line intersects most of the characteristic curves in the ohmic region, as
illustrated. In this case,

12
0.5m
24Ω

Part (b) shows the operating region expanded with three Q-points shown (Q0, Q1, and Q2), depending
on  . As you move along the load line in the ohmic region, the value of  varies as the Q-point falls
successively on curves with different slopes. The Q-point is moved along the load line by varying 
0 to  2, in this case. As this happens, the slope of each successive curve is less than the previous
one. A decrease in slope corresponds to less  and more  , which implies an increase in  . This
change in resistance can be exploited in a number of applications where voltage control of a resistance is
useful.

Q-point at the Origin

In certain amplifiers, you may want to change the resistance seen by the ac signal without affecting the dc
bias in order to control the gain. Sometimes you will see a JFET used as a variable resistance in a circuit
where both and  are set at 0, which means that the Q-point is at the origin. A Q-point at the origin is
achieved by using a capacitor in the drain circuit of the JFET. This makes the dc quantities  0  and
  0mA , so the only variables are  and  , the ac drain current. At the origin you have the ac drain
current controlled by  . As you learned earlier, trans-conductance is defined as a change in drain
current for a given change in gate-to-source voltage. So, the key factor when you bias at the origin is the
trans-conductance. This figure shows the characteristic curves expanded at the origin. Notice that the
ohmic region extends into the third quadrant.

So friends here we come to the end of our discussion in this lecture and therefore we sum up:

We learnt that

The Q-point in a JFET with voltage-divider bias is more stable than in a self-biased JFET.
Current-source bias increases the stability of a self-biased JFET.

A JFET used as a variable resistor is biased in the ohmic region.

To bias in the ohmic region,   must be much smaller than  .

The gate voltage controls  in the ohmic region an finally we learnt that

When a JFET is biased at the origin, the ac channel resistance is controlled by the gate voltage.

So that is it in today’s lecture in the next lecture we shall talk about the MOSFET characteristics,
parameters and its biasing. So that is it for today thank you very much.