Lecture 7
PN Junction and MOS Electrostatics(IV)
Metal-Oxide-Semiconductor Structure (contd.)
Outline
1. Overview of MOS electrostatics under bias
2. Depletion regime
3. Flatband
4. Accumulation regime
5. Threshold
6. Inversion regime
Reading Assignment:
Howe and Sodini, Chapter 3, Sections 3.8-3.9
6.012 Spring 2007 Lecture 7 1
1. Overview of MOS electrostatics
under bias
Application of bias:
• Built-in potential across MOS structure increases
from φB to φB + VGB
• Oxide forbids current flow ⇒
– J=0 everywhere in semiconductor
– Need drift = -diffusion in SCR
• Must maintain boundary condition at Si/SiO2
interface
– Eox / Es ≈ 3
How can this be accommodated simultaneously? ⇒
quasi-equilibrium situation with potential build-up
across MOS equal to φB + VGB
6.012 Spring 2007 Lecture 7 2
Important consequence of quasi-equilibrium:
⇒ Boltzmann relations apply in semiconductor
[they were derived starting from Jn = Jp =0]
n(x) = ni e qφ (x) kT
− qφ(x) kT
p(x) = ni e
and
2
np = ni at every x
6.012 Spring 2007 Lecture 7 3
2. Depletion regime
For VGB>0, metal attracts electrons and repels holes
⇒ Depletion region widens
For VGB<0, metal repels electrons and attracts holes
⇒ Depletion region shrinks
6.012 Spring 2007 Lecture 7 4
In depletion regime, all results obtained for thermal
equilibrium apply if φB → φB+VGB.
For example:
Depletion region thickness:
⎡ ⎤
εs ⎢ 2C 2
( B GB ) ⎥
φ + V
xd (VGB ) = ⎢ 1+ ox
− 1⎥
Cox ⎢ εs qNa
⎣ ⎦⎥
Potential drop across semiconductor SCR:
qN a x d2
V B (VGB ) =
2ε s
Surface potential
φ(0) = φ p + VB (VGB )
Potential drop across oxide:
qN a x d t ox
Vox (VGB ) =
ε ox
6.012 Spring 2007 Lecture 7 5
3. Flatband
At a certain negative VGB, depletion region is wiped out
⇒ Flatband
Flatband Voltage:
VGB = VFB = −φ B = −(φN + − φ p )
6.012 Spring 2007 Lecture 7 6
4. Accumulation regime
If VGB < VFB accumulation of holes at Si/SiO2 interface
6.012 Spring 2007 Lecture 7 7
5. Threshold
Back to VGB>0.
For sufficiently large VGB>0, electrostatics change when
n(0)=Na ⇒ threshold.
Beyond threshold, we cannot neglect contributions of
electrons towards electrostatics.
Let’s compute the gate voltage (threshold voltage) that
leads to n(0)=Na.
Key assumption: use electrostatics of depletion
(neglect electron concentration at threshold)
6.012 Spring 2007 Lecture 7 8
Computation of threshold voltage.
Three step process:
First, compute potential drop in semiconductor at
threshold. Start from:
n(0) = ni e qφ(o) kT
Solve for φ(0) at VGB = VT:
kT n (0) kT Na
φ(0 ) V =V T = q • ln n = • ln = − φp
GB
i VGB = VT q n i
VB (VT ) = −2φ p
Hence:
6.012 Spring 2007 Lecture 7 9
Computation of threshold voltage (contd.)
Second, compute potential drop in oxide at threshold.
Obtain xd(VT) using relationship between VB and xd in
depletion:
qN a x d (VT )
2
VB (VGB = VT ) = = −2φ p
2ε s
Solve for xd at VGB = VT:
2 εs (−2φ p )
xd (VT ) = x d max =
qN a
Then:
qN a xd (VT ) 1
Vox (VT ) = Eox (VT )tox = tox = 2 εs qN a (−2φ p )
ε ox Cox
6.012 Spring 2007 Lecture 7 10
Computation of threshold voltage. (contd..)
Finally, sum potential drops across structure.
1
VT + φB = VB (VT ) + Vox (VT ) = −2φ P + 2ε s qNa (−2φ p )
Cox
Solve for VT:
1
VGB = VT = VFB − 2φP + 2εsqNa(−2φp)
Cox
Key dependencies:
• If Na ↑ ⇒ VT ↑. The higher the doping, the more
voltage required to produce n(0) = Na
• If Cox ↑ (tox↓) ⇒ VT ↓. The thinner the oxide, the
less voltage dropped across the oxide.
6.012 Spring 2007 Lecture 7 11
6. Inversion
What happens for VGB > VT?
More electrons at Si/SiO2 interface than acceptors
⇒ inversion.
Electron concentration at Si/SiO2 interface modulated
by VGB ⇒ VGB ↑ → n(0) ↑ → |Qn| ↑ :
Field-effect control of mobile charge density!
[essence of MOSFET]
Want to compute Qn vs. VGB [charge-control relation]
Make sheet charge approximation: electron layer at
Si/SiO2 is much thinner than any other dimension in
problem (tox, xd).
6.012 Spring 2007 Lecture 7 12
Charge-Control Relation
To derive the charge-control relation, let’s look at
the overall electrostatics:
6.012 Spring 2007 Lecture 7 13
Charge-Control Relation (contd.)
Key realization:
n(0) ∝ e qφ(0) kT
qN a x d ∝ φ (0)
Hence, as VGB ↑ and φ(0) ↑ , n(0) will change a lot, but
|Qd| will change very little.
Several consequences:
• xd does not increase much beyond threshold:
2ε s (−2φ p )
xd (inv.) ≈ x d (VT ) = = xd,max
qNa
• VB does not increase much beyond VB(VT) =-2φP
(a thin sheet of electrons does not contribute much to
VB.):
VB (inv.) ≈ VB (VT ) = −2φ P
6.012 Spring 2007 Lecture 7 14
Charge-Control Relation (contd..)
• All extra voltage beyond VT used to increase
inversion charge Qn. Think of it as capacitor:
– Top plate: metal gate
– Bottom plate: inversion layer
Q = CV
⇒
Qn = −Cox (VGB − VT ) for VGB > VT
Coul/cm2
Existence of Qn and control over Qn by VGB
⇒ key to MOS electronics
6.012 Spring 2007 Lecture 7 15
What did we learn today?
Summary of Key Concepts
In inversion:
Qn = Cox (VGB − VT ) for VGB > VT
6.012 Spring 2007 Lecture 7 16
