SKiiP 613 GD123-3DUL V3

Absolute Maximum Ratings Ts = 25°C unless otherwise specified

Symbol Conditions Values Unit
System
VCC 1) Operating DC link voltage 900 V
Visol DC, t = 1 s, main terminals to heat sink 4300 V
It(RMS) per AC terminal, Tterminal <115°C 400 A
IFSM Tj = 150 °C, tp = 10 ms, sin 180° 3500 A
I²t Tj = 150 °C, tp = 10 ms, diode 61 kA²s
fout fundamental output frequency 1 kHz
SKiiP® 3 Tstg storage temperature -40 ... 85 °C
IGBT
VCES Tj = 25 °C 1200 V
IC Ts = 25 °C 577 A
Tj = 150 °C
Ts = 70 °C 444 A
SKiiP 613 GD123-3DUL V3 ICnom 600 A
Tj 2) junction temperature -40 ... 150 °C
Diode
Features VRRM Tj = 25 °C 1200 V
• SKiiP technology inside IF Ts = 25 °C 466 A
• Trench IGBTs Tj = 150 °C
Ts = 70 °C 353 A
• CAL HD diode technology
IFnom 470 A
• DC-Link voltage monitoring
• Integrated current sensor Tj junction temperature -40 ... 150 °C
• Integrated temperature sensor Driver
• Integrated heat sink
Vs power supply 13 ... 30 V
• UL recognized File no. E63532
ViH input signal voltage (high) 15 + 0.3 V
Typical Applications* VisolPD QPD <= 10pC, PRIM to POWER 1170 V
• Renewable energies dv/dt secondary to primary side 75 kV/µs
• Traction
fsw switching frequency 15 kHz
• Elevators
• Industrial drives
Characteristics Ts = 25°C unless otherwise specified
Symbol Conditions min. typ. max. Unit
Footnotes
IGBT
1)
With assembly of suitable MKP capacitor
VCE(sat) IC = 300 A Tj = 25 °C 1.7 2.1 V
per terminal
at terminal Tj = 125 °C 1.9 V
VCE0 Tj = 25 °C 0.90 1.10 V
Tj = 125 °C 0.80 1.00 V
rCE Tj = 25 °C 2.6 3.3 mΩ
at terminal
Tj = 125 °C 3.7 4.4 mΩ
Eon + Eoff IC = 300 A VCC = 600 V 110 mJ
Tj = 125 °C VCC = 900 V 195 mJ
Rth(j-s) per IGBT switch 0.059 K/W
Rth(j-r) per IGBT switch 0.054 K/W

S33

© by SEMIKRON Rev. 1 – 06.03.2014 1

SKiiP 613 GD123-3DUL V3
Characteristics Ts = 25°C unless otherwise specified
Symbol Conditions min. typ. max. Unit
Diode
VF = VEC IF = 300 A Tj = 25 °C 1.50 1.80 V
at terminal Tj = 125 °C 1.50 V
VF0 Tj = 25 °C 0.9 1.10 V
Tj = 125 °C 0.7 0.90 V
rF Tj = 25 °C 2 2.3 mΩ
at terminal
Tj = 125 °C 2.7 3 mΩ
SKiiP® 3 Err IF = 300 A VR = 600 V 21 mJ
Tj = 125 °C VR = 900 V 28 mJ
Rth(j-s) per diode switch 0.115 K/W
Rth(j-r) per diode switch 0.174 K/W
Driver
SKiiP 613 GD123-3DUL V3 Vs supply voltage non stabilized 13 24 30 V
IS0 bias current @Vs=24V, fsw = 0, IAC = 0 420 mA
Is k1 = 42 mA/kHz, k2 = 0.00211 mA/A2 = 420 + k1* fsw + k2 * IAC2 mA
Features VIT+ input threshold voltage (HIGH) 12.3 V
• SKiiP technology inside VIT- input threshold voltage (LOW) 4.6 V
• Trench IGBTs RIN input resistance 10 kΩ
• CAL HD diode technology
CIN input capacitance 1 nF
• DC-Link voltage monitoring
• Integrated current sensor tpRESET error memory reset time 0.0122 ms
• Integrated temperature sensor tTD top / bottom switch interlock time 3 µs
• Integrated heat sink tjitter jitter clock time 125 ns
• UL recognized File no. E63532 tSIS short pulse suppression time 0.625 0.7 µs
Typical Applications* ITRIPSC over current trip level 735 750 765 APEAK
• Renewable energies Ttrip over temperature trip level 110 115 120 °C
• Traction VDCtrip over voltage trip level, 900 V
• Elevators input-output
• Industrial drives td(on)IO turn-on 1.4 µs
VCC = 900 V
propagation time
IC = 300 A
input-output
Tj = 25 °C
Footnotes td(off)IO turn-off 1.4 µs
1)
With assembly of suitable MKP capacitor propagation time
per terminal System
flow rate=420m3/h, Ta=25°C, 500m
Rth(r-a) 0.0294 K/W
above sea level
RCC'+EE' terminals to chip, Ts = 25 °C 0.5 mΩ
LCE commutation inductance 12 nH
CCHC per phase, AC-side 1.7 nF
ICES + IRD VGE = 0 V, VCE = 1200 V, Tj = 25 °C 1.2 mA
Mdc DC terminals, SI Units 6 8 Nm
Mac AC terminals, SI Units 13 15 Nm
w SKiiP System w/o heat sink 2.4 kg
wh heat sink 6.2 kg

S33

2 Rev. 1 – 06.03.2014 © by SEMIKRON

SKiiP 613 GD123-3DUL V3

© by SEMIKRON Rev. 1 – 06.03.2014 3

SKiiP 613 GD123-3DUL V3

Fig. 1: Typical IGBT output characteristic Fig. 2: Typical diode output characteristics

Fig. 3: Typical energy losses E = f(Ic, Vcc) Fig. 4: Typical energy losses E = f(Ic, Vcc)

Fig. 5: Pressure drop Δp versus flow rate V Fig. 6: Transient thermal impedance Zth(j-r)

4 Rev. 1 – 06.03.2014 © by SEMIKRON

SKiiP 613 GD123-3DUL V3

Fig. 7: Transient thermal impedance Zth(r-a) Fig. 8: Coefficients of thermal impedances

Fig. 9: Thermal resistance Rth(r-a) versus flow rate V

© by SEMIKRON Rev. 1 – 06.03.2014 5

SKiiP 613 GD123-3DUL V3

Heat sink

6 Rev. 1 – 06.03.2014 © by SEMIKRON

SKiiP 613 GD123-3DUL V3

System

This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX

* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.

© by SEMIKRON Rev. 1 – 06.03.2014 7