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EDC

This document outlines the course content and outcomes for an Electronic Devices and Circuits course. The course is a 3-credit theory course that introduces students to semiconductor physics concepts and various electronic devices like diodes, transistors, and amplifiers. The 5 units cover semiconductor devices, rectifiers and filters, transistor characteristics, transistor biasing, and small signal analysis of transistor amplifiers. Upon completing the course, students will be able to understand semiconductor devices, design rectifier and filter circuits, comprehend transistor configurations, differentiate biasing techniques, and design amplifiers using transistors. The course contributes to the achievement of various program outcomes related to engineering fundamentals and design.

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Prasanth Varasala
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130 views

EDC

This document outlines the course content and outcomes for an Electronic Devices and Circuits course. The course is a 3-credit theory course that introduces students to semiconductor physics concepts and various electronic devices like diodes, transistors, and amplifiers. The 5 units cover semiconductor devices, rectifiers and filters, transistor characteristics, transistor biasing, and small signal analysis of transistor amplifiers. Upon completing the course, students will be able to understand semiconductor devices, design rectifier and filter circuits, comprehend transistor configurations, differentiate biasing techniques, and design amplifiers using transistors. The course contributes to the achievement of various program outcomes related to engineering fundamentals and design.

Uploaded by

Prasanth Varasala
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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R19

<Subject Code>
ELECTRONIC DEVICES & CIRCUITS
CourseCategory: Professional Core Credits: 3
CourseType: Theory Lecture-Tutorial-Practice: 3 -0 -0
Prerequisites: Semiconductor Physics ContinuousEvaluation: 40
SemesterendEvaluation: 60
TotalMarks: 100

COURSEOUTCOMES

Upon successful completion of the course, the student will be able to:

CO1 understand the concepts various semiconductor devices.

CO2 design rectifiers and filter circuits for the given specifications.

CO3 understand the concepts of BJT and FET for various configurations

CO4 differentiate biasing, stabilization and compensation techniques of BJT circuits.

CO5 design amplifiers using BJT and FET.

ContributionofCourseOutcomestowardsachievementofProgramOutcomes(1–
Low,2-Medium,3–High)

PO PO PO PO PO PO PO PO PO PO PO PO PSO PSO
1 2 3 4 5 6 7 8 9 10 11 12 1 2

CO1 2 1

CO2 2 2 1

CO3 1 2

CO4 2 2 1 2

CO5 1 2 2

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COURSECONTENT
UNIT-I
SEMICONDUCTOR DEVICES
PN Junction Diode: Introduction to Semiconductor Physics-Classification of Materials, Charge
densities in semiconductors, Fermi Level in intrinsic and Extrinsic semiconductors.Open circuited PN
junction, Biased PN junction, DiodeEquation, Volt-Ampere Characteristics, Temperaturedependence of
V-I characteristics, Diode Resistance and Diode Capacitance.
Special Purpose Electronic Devices: Breakdown Mechanisms in SemiconductorDiodes, Zener Diode
Characteristics, Principle of Operation and Characteristics of TunnelDiode (with the help of Energy
Band Diagram), Varactor Diode, LED, Photo Diode.
UNIT-II
RECTIFIERS AND FILTERS
Rectifiers:Introduction, half wave rectifier, full wave rectifier, bridge rectifier circuit diagrams
operation, input and output waveforms, derivations of Idc, IRMS, efficiency, ripple factor, TUF, PIV,
voltage regulation, Design of Zener as voltage regulator.
Filters: Series Inductor filter, Shunt Capacitor filter, L- section filter, Π- section filter, Multiple L-
section Filter, derivation for ripple factor in each case.
UNIT-III
TRANSISTOR CHARACTERISTICS
BJT: Introduction, transistor current components, transistor equation, transistor configurations,
transistor as an amplifier, characteristics of transistor in Common Base, Common Emitter and Common
Collectorconfigurations, SCR, UJT.
FET: Introduction,JFET types, construction, operation, characteristics, parameters,MOSFET -
types,construction, operation, characteristics, comparison between JFET and MOSFET.
UNIT-IV
TRANSISTOR BIASING
Need for biasing, operating point, load line analysis, BJT biasing methods, bias stability, fixed bias,
collector to base bias, self-bias, Stabilization against variations in VBE, IC and β, Stability factors, (S, S',
S'’), Bias compensation Techniques, Thermal runaway, Thermal stability. FET Biasing methods and
stabilization.
UNIT-V
SMALL SIGNAL ANALYSIS OF TRANSISTOR AMPLIFIER MODELS
BJT: Transistor hybrid model, determination of h-parameters, generalized analysis of transistor
amplifier model using h-parameters, Analysis of CB, CE and CC amplifiers using exact and approximate
analysis, Comparison of transistor amplifiers.
FET: Generalized analysis of small signal model, Analysis of CG, CS and CD amplifiers, comparison
of FET amplifiers.
TEXTBOOKS
[1] Electronic Devices and Circuits – J. Millman, C.C.Halkias, and Satyabrata Jit, McGraw Hill Education.
4e, 2015,.
[2] Electronic Devices and Circuits – Mohammad Rashid, Cengage Learning, 2013.
[3] Semiconductor Physics and Devices-Donald A. Neamen, Third Edition , McGraw-Hill Higher- Education,
[4] Electronic Devices and Circuits – David A. Bell, 5 Ed, Oxford.
[5]

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REFERENCEBOOKS
[1] Electronic Devices and Circuits – BVRao, KBR Murty, K Raja Rajeswari, PCR Pantulu, Pearson, 2nd
edition.
[2] Electronic Devices and Circuit Theory – RL Boylestad and LouisNashelsky, Pearson Publications,
10thEdition.
[3] Electronic Devices and Circuits – B P Singh, RekhaSingh,PearsonPublications,Second Edition.
[4] Electronic Devices and Circuits-Salivahanan, Kumar, Vallavaraj, 4th Edition, TataMc-Graw Hill.

WEB-RESOURCES
1. www.satishkashayap.com/2013/03/video-lectures-on-electron-devices-by.html

Dr.M.Ramasubba Dr.Narasimha G.Ratna Raj Dr.V.Sailaja


Dr.N.Balaji
Reddy Sharma N V S (BoS Chairman)

PEC 12

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