0 ratings0% found this document useful (0 votes) 86 views2 pages2SD1701 Transistor Silicona
2SD1701 Transistor Silicona
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NEC NPN SILICON TRANSISTOR
2SD1701
DESCRIPTION The 2501701 is NPN slicon epitaxial daington transistor
designed or ple motor divs, printr diver, soerid driver PACKAGE DIMENSIONS
FEATURES © High OC Curent gin. ie
© Zener Diode between Collector and Base for Absorbing uy
Surge Voltage i buin. i
+ Reverse Diode betwen Cllactor and Emits uit Gi
‘ABSOLUTE MAXIMUM RATINGS .
Maximum Temperatures zz
Storage Temperature ....-.--.++++ —85t0 +160°C 52
Junction Temperature 150 °C Maximum é —'
Maximum Power Dissipation (Ta = 25 °C) az a
Total Power DISipAton ...oeseeessye 780 mW Lye
Maximum Voltages and Currents (T, = 25°C) a8
Vego Collector to Base Voltage... . 60810 V ve
Veeo Collector Emitter Voltage... 60810. V oe
Veo Emitter to Base Voltage. - 80 Vv 2 Gelictor
vere, Goncurcunet 208 | ra ieee
legaa* Collector Curent laa A ee
+ Pw 10m Duty yee 560%
ELECTRICAL CHARACTERISTICS (T= 25 °C)
eer** OC Current Gain, 4000 ‘50000 Voce =20V, ic -0.5A |
tq Slrtge Tine as ” (ie 19" 1.0mA
« FaltcTime 10 us \Vec=40V. Ry = 80.0
Vestal Suan Vote 0312 Vtg O5AIg= 10m
eso. Cater um Votoe gett
eeo Caleta Vote spew inno
“Pl PW #250, Ost le © 2%
Casiiation of er
Tae | 406 260 | 600 B550S
‘Test Conditions: VeE=20V.1e=05A
496 NEC
TYPICAL CHARACTERISTICS (T= 25°C)
AaoieN® Temrenarune. TRERMAL ReSIoTANCE METHOD)
ear 29
Power Dissipation —W
r
I~ Colletor Curent—A
025 369500125150
Ta~ Ambient ermperature="C
96 CURRENT GAIN vs
eSctecron CURRENT
an
i
én
sf 8 si
2a Ea
'eQoTD02 90s 07 OF 05 12
Ig Callctr Curent A
Yoe~Colector to Emitter Vottage—¥
Be CURRENT GAIN we,
eocieeron CURRENT
“'Qare0a 005 07 02 05
Ig~Callecter Current
Voecsaty~Caiactor Saturation Votage—V
2SD1701
COLLECTOR CURRENT ws. coLLECTOR
SSewrren VOUTAGE
3
:
i
é
a
as
Yoe~Colet! to Emitter Vatnge-V
ASE AND COLLECTOR SATURATION
SOTRABE SOUSECZOFOW ZUBAIR
&
Boo
§
§ of
3 al
J oot
Hoos
Saws Sncgamame ES
1e~Catactor Curent
497
