IPD70R1K4P7S

MOSFET
700VCoolMOSªP7PowerTransistor DPAK

CoolMOS™isarevolutionarytechnologyforhighvoltagepower tab
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcost
sensitiveapplicationsinconsumermarketssuchascharger,adapter,
lighting,TV,etc.
ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction 2
MOSFET,combinedwithanexcellentprice/performanceratioandstateof 1

theartease-of-uselevel.Thetechnologymeetshighestefficiency 3
standardsandsupportshighpowerdensity,enablingcustomersgoing
towardsveryslimdesigns.

Drain
Features Pin 2, Tab

•ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss
•Excellentthermalbehavior Gate
Pin 1
•IntegratedESDprotectiondiode
•Lowswitchinglosses(Eoss)
•Productvalidationacc.JEDECStandard Source
Pin 3

Benefits
•Costcompetitivetechnology
•Lowertemperature
•HighESDruggedness
•Enablesefficiencygainsathigherswitchingfrequencies
•Enableshighpowerdensitydesignsandsmallformfactors

Potentialapplications
RecommendedforFlybacktopologiesforexampleusedinChargers,
Adapters,LightingApplications,etc.

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj=25°C 700 V
RDS(on),max 1.4 Ω
Qg,typ 4.7 nC
ID,pulse 8.2 A
Eoss @ 400V 0.6 µJ
V(GS)th,typ 3 V
ESD class (HBM) 1C

Type/OrderingCode Package Marking RelatedLinks

IPD70R1K4P7S PG-TO 252-3 70S1K4P7 see Appendix A

Final Data Sheet 1 Rev.2.1,2018-02-13

 700VCoolMOSªP7PowerTransistor
IPD70R1K4P7S

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Final Data Sheet 2 Rev.2.1,2018-02-13

 700VCoolMOSªP7PowerTransistor
IPD70R1K4P7S

1Maximumratings
atTj=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 4.0 TC = 20°C
Continuous drain current1) ID A
- - 2.5 TC = 100°C
Pulsed drain current2) ID,pulse - - 8.2 A TC=25°C
Application (Flyback) relevant measured with standard leakage
IAS - - 2.4 A
avalanche current, single pulse3) inductance of transformer of 5µH
MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V
-16 - 16 static;
Gate source voltage VGS V
-30 - 30 AC (f>1 Hz)
Power dissipation Ptot - - 22.7 W TC=25°C
Operating and storage temperature Tj,Tstg -40 - 150 °C -
Continuous diode forward current IS - - 2.7 A TC=25°C
Diode pulse current 2)
IS,pulse - - 8.2 A TC = 25°C
Reverse diode dv/dt 4)
dv/dt - - 1 V/ns VDS=0...400V,ISD<=IS,Tj=25°C
Maximum diode commutation speed 4)
dif/dt - - 50 A/µs VDS=0...400V,ISD<=IS,Tj=25°C
Insulation withstand voltage VISO - - n.a. V Vrms, TC=25°C, t=1min

2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction RthJC - - 5.5 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W Device on PCB, minimal footprint
Device on 40mm*40mm*1.5 epoxy
PCB FR4 with 6cm2 (one layer 70µm
Thermal resistance, junction - ambient
RthJA - 35 45 °C/W thickness) copper area for drain
for SMD version
connection and cooling. PCB is
vertical without air stream cooling.
Soldering temperature, wave- & reflow
Tsold - - 260 °C reflow MSL3
soldering allowed

1)
Limited by Tj max. Tj = 20°C. Maximum duty cycle D=0.5
2)
Pulse width tp limited by Tj,max
3)
Proven during verification test. For explanation please read AN - CoolMOSTM 700V P7.
4)
VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG
Final Data Sheet 3 Rev.2.1,2018-02-13
 700VCoolMOSªP7PowerTransistor
IPD70R1K4P7S

3Electricalcharacteristics

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 700 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 2.50 3 3.50 V VDS=VGS,ID=0.04mA
- - 1 VDS=700V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 - VDS=700V,VGS=0V,Tj=150°C
Gate-source leakage current incl. Zener
IGSS - - 1 µA VGS=20V,VDS=0V
diode
- 1.15 1.40 VGS=10V,ID=0.7A,Tj=25°C
Drain-source on-state resistance RDS(on) Ω
- 2.62 - VGS=10V,ID=0.7A,Tj=150°C
Gate resistance RG - 1.6 - Ω f=1MHz,opendrain

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 158 - pF VGS=0V,VDS=400V,f=250kHz
Output capacitance Coss - 3 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
Co(er) - 9 - pF VGS=0V,VDS=0...400V
related1)
Effective output capacitance, time
Co(tr) - 113 - pF ID=constant,VGS=0V,VDS=0...400V
related2)
VDD=400V,VGS=13V,ID=0.5A,
Turn-on delay time td(on) - 12 - ns
RG=10.2Ω
VDD=400V,VGS=13V,ID=0.5A,
Rise time tr - 4.9 - ns
RG=10.2Ω
VDD=400V,VGS=13V,ID=0.5A,
Turn-off delay time td(off) - 63 - ns
RG=10.2Ω
VDD=400V,VGS=13V,ID=0.5A,
Fall time tf - 61 - ns
RG=10.2Ω

Table6Gatechargecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 0.7 - nC VDD=400V,ID=0.5A,VGS=0to10V
Gate to drain charge Qgd - 1.7 - nC VDD=400V,ID=0.5A,VGS=0to10V
Gate charge total Qg - 4.7 - nC VDD=400V,ID=0.5A,VGS=0to10V
Gate plateau voltage Vplateau - 4.3 - V VDD=400V,ID=0.5A,VGS=0to10V

1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
Final Data Sheet 4 Rev.2.1,2018-02-13
 700VCoolMOSªP7PowerTransistor
IPD70R1K4P7S

Table7Reversediodecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=0.9A,Tj=25°C
Reverse recovery time trr - 130 - ns VR=400V,IF=0.5A,diF/dt=50A/µs
Reverse recovery charge Qrr - 0.4 - µC VR=400V,IF=0.5A,diF/dt=50A/µs
Peak reverse recovery current Irrm - 6 - A VR=400V,IF=0.5A,diF/dt=50A/µs

Final Data Sheet 5 Rev.2.1,2018-02-13

 700VCoolMOSªP7PowerTransistor
IPD70R1K4P7S

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Safeoperatingarea
30 102

25
101
1 µs
10 µs

20 100 µs
0
10
Ptot[W]

1 ms

ID[A]
15

10 ms
10-1

10
DC

10-2
5

0 10-3
0 25 50 75 100 125 150 100 101 102 103
TC[°C] VDS[V]
Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
2
10 101

101 0.5
1 µs
10 µs
0.2
100 µs
100
ZthJC[K/W]

0.1
ID[A]

1 ms 0
10 0.05
0.02
10-1 10 ms 0.01
single pulse
DC

10-2

10-3 10-1
100 101 102 103 10-5 10-4 10-3 10-2 10-1
VDS[V] tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp ZthJC=f(tP);parameter:D=tp/T

Final Data Sheet 6 Rev.2.1,2018-02-13

 700VCoolMOSªP7PowerTransistor
IPD70R1K4P7S

Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics
10 7
20 V 20 V
10 V 10 V
9 8V
6 8V
7V
8

7V 5
7
6V
6 6V 5.5 V
4
ID[A]

ID[A]
5

3
4 5.5 V 5V

3 2
5V 4.5 V
2
1
1 4.5 V

0 0
0 5 10 15 20 0 5 10 15 20
VDS[V] VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance
6.0 4.0
6.5 V

5.5 3.5
5V 5.5 V 6V

5.0 3.0

4.5 2.5
RDS(on)[Ω]

RDS(on)[Ω]

98%
4.0 2.0

3.5 7V 1.5
typ
10 V
3.0 1.0

2.5 0.5

2.0 0.0
0 5 10 15 -50 -25 0 25 50 75 100 125 150
ID[A] Tj[°C]
RDS(on)=f(ID);Tj=125°C;parameter:VGS RDS(on)=f(Tj);ID=0.7A;VGS=10V

Final Data Sheet 7 Rev.2.1,2018-02-13

 700VCoolMOSªP7PowerTransistor
IPD70R1K4P7S

Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge
10 10

9 9

8 25 °C 8

120 V
7 7

400 V
6 6

VGS[V]
ID[A]

5 5
150 °C
4 4

3 3

2 2

1 1

0 0
0 2 4 6 8 10 12 0 2 4 6
VGS[V] Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=0.5Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode Diagram13:Drain-sourcebreakdownvoltage
2
10 840
25 °C
125 °C 820

800

780

101 760

740
VBR(DSS)[V]
IF[A]

720

700

100 680

660

640

620

10-1 600
0.0 0.5 1.0 1.5 2.0 -75 -50 -25 0 25 50 75 100 125 150 175
VSD[V] Tj[°C]
IF=f(VSD);parameter:Tj VBR(DSS)=f(Tj);ID=1mA

Final Data Sheet 8 Rev.2.1,2018-02-13

 700VCoolMOSªP7PowerTransistor
IPD70R1K4P7S

Diagram14:Typ.capacitances Diagram15:Typ.Cossstoredenergy
4
10 1.2

1.0
103

Ciss 0.8
2
10

Eoss[µJ]
C[pF]

0.6

101
Coss 0.4

100 Crss
0.2

10-1 0.0
0 100 200 300 400 500 0 100 200 300 400 500 600 700
VDS[V] VDS[V]
C=f(VDS);VGS=0V;f=250kHz Eoss=f(VDS)

Final Data Sheet 9 Rev.2.1,2018-02-13

 700VCoolMOSªP7PowerTransistor
IPD70R1K4P7S

5TestCircuits

Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform

Rg1

VDS

Rg 2

IF
Rg1 = Rg 2

Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform

VDS
90%

VDS
VGS 10%
VGS
td(on) tr td(off) tf

ton toff

Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform

V(BR)DS
ID VDS

VDS VDS
ID

Final Data Sheet 10 Rev.2.1,2018-02-13

 700VCoolMOSªP7PowerTransistor
IPD70R1K4P7S

6PackageOutlines

DOCUMENT NO.
MILLIMETERS INCHES Z8B00180313
DIM
MIN MAX MIN MAX
A 2.20 2.40 0.087 0.094 SCALE 0
A1 0.00 0.15 0.000 0.006
b 0.68 0.89 0.027 0.035 2.5
b2 0.72 1.10 0.028 0.043
b3 5.13 5.50 0.202 0.217 0 2.5
c 0.46 0.60 0.018 0.024 5mm
c2 0.46 0.60 0.018 0.024
D 5.98 6.22 0.235 0.245
EUROPEAN PROJECTION
D1 5.25 5.40 0.207 0.213
E 6.40 6.73 0.252 0.265
E1 4.70 5.60 0.185 0.220
e 2.29 (BSC) 0.090 (BSC)
e1 4.57 (BSC) 0.180 (BSC)
N 3 3 ISSUE DATE
H 9.40 10.48 0.370 0.413 04-02-2016
L 1.38 1.70 0.054 0.067
L3 0.90 1.25 0.035 0.049 REVISION
L4 0.60 1.00 0.024 0.039 01

Figure1OutlinePG-TO252-3,dimensionsinmm/inches

Final Data Sheet 11 Rev.2.1,2018-02-13

 700VCoolMOSªP7PowerTransistor
IPD70R1K4P7S

7AppendixA

Table11RelatedLinks
• IFXCoolMOSªP7Webpage:www.infineon.com

• IFXDesigntools:www.infineon.com

Final Data Sheet 12 Rev.2.1,2018-02-13

 700VCoolMOSªP7PowerTransistor
IPD70R1K4P7S

RevisionHistory
IPD70R1K4P7S

Revision:2018-02-13,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2016-11-24 Release of final version
2.1 2018-02-13 Corrected front page text

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ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.

TrademarksupdatedAugust2015

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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
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failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
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Final Data Sheet 13 Rev.2.1,2018-02-13