For the given circuits and input waveform determine the output waveform
Answer: d
Explanation: Diode is off when
Vi < 5 and for Vi > 5, Vo = 5V.
2. The Q-point of the zener diode in the circuit shown below is
a) (0.34 mA, 4 V)
b) (0.34 mA, 4.93 V)
c) (0.94 mA, 4 V)
d) (0.94 mA, 4.93 V)
Ans: a
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3. The dc current through each diode in a bridge
Rectifier equals
a. The load current
b. Half the dc load current
c. Twice the dc load current
d. One-fourth the dc load current
Ans: a
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4. When the reverse bias voltage in the varactor diode increases, the capacitance
a. Decreases
b. Increases
c. Becomes zero
d. Becomes infinite
Ans: a
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5. Component that eliminates the fluctuations in rectified voltage and produces relatively smooth DC
voltage is
a. Rectifier
b. Modulator
c. Filter
d. amplifier
Ans: c
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6. To limit the output voltage of positive limiter to 5V, when a 10 V peak input voltage is applied, bias
voltage must be
a. 3V
b. 4.3 V
c. 3.4 V
d. 0.7 V
Ans: b
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7. What is a typical conduction voltage for a silicon diode?
a. 1.1 V
b. 0.7V
c. 0.25 V
d. 0.5V
Ans: b
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8. Estimate the maximum positive voltage produced by the below arrangement.
a.. 6.3v
b. 4.3 v
c. 7.7v
d. 5.7v
Ans. 5.7v
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9.
9. Estimate the peak ripple voltage in the following arrangement.
a. 10 mV
b. 25 mV
c. 50 mV
d. 100 Mv
Ans: d
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10. The cathode of zener diode in a voltage regulator is normally
a. more negative than the anode
b. More positive than the anode
c. At +0.7v
d. grounded
Ans: b
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11. When reverse bias is applied to a crystal diode, it
a. Raises the potential barrier
b. Lower the potential barrier
c. Increase the majority carrier current greatly
d. None of these
Ans: a
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12. At reverse bias, the number of minority carriers crossing the junction of a diode depends primarily
on the
a. Concentration of doping impurities
b. Rate of thermal generation of electron hole pairs
c. Magnitutde of the potential barrier
d. All of these
Ans: b
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13. The output voltage of a zener diode as 12 v 10% tolerance is
a. 12.2 to 11.8 v
b. 13. 2 to 10.8 v
c. Only 12 v
d. None of these
Ans: b
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14. For full wave rectification, a four diode bridge rectifier is claimed to have the following advantages
over a two diode circuit:
1. Less expensive transformer
2. Smaller size transformer, and
3. Suitability for higher voltage application.
Of these,
a. Only 1 and 2 are true
b. Only 1 and 3 are true
c. Only 2 and 3 true
d. 1, 2 as well as 3 are true
Ans: a & d
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15. For small signal ac operation, a practical forward biased diode can be modeled as
a. Resistance and capacitance in series
b. Ideal diode and resistance in parallel
c. Resistance and ideal diode in series
d. Resistance
Ans: d
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16. The diode in the circuit shown, if Von = 0.7 volts but is ideal otherwise. If V i= 5 sin(ωt) volts, the
minimum and maximum values of V o (in volts) are, respectively,
a. -5 and 2.7
b. 2.7 and 5
c. -5 and 3.85
d. 1.3 and 5
Ans: c
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17. For the same a.c. voltage and load impedance, which of the following statements about rectifier are
correct?
a. The average load current in a full wave rectifier is twice than in a half wave rectifier
b. The average load current in a full wave rectifier is n times that in a half wave rectifier
c. Half wave rectifier will have a bigger sized transformer compared to full wave rectifier
d. Half wave rectifier will have a small sized transformer compared to full wave rectifier
Ans: a&d
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18. The reverse current in a diode is of the order of ……………….
a. kA
b. mA
c. μA
d. A
Ans: c
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19. The d.c. resistance of a crystal diode is ………….. its a.c. resistance
a. the same as
b. more than
c. less than
d. none of the above
Ans: c
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20. The leakage current in a crystal diode is due to …………….
a. minority carriers
b. majority carriers
c. junction capacitance
d. none of the above
Ans: a
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