BSC059N03S

OptiMOS®2 Power-Transistor
Product Summary
Features
V DS 30 V
• Fast switching MOSFET for SMPS
R DS(on),max 5.5 mΩ
• Optimized technology for notebook DC/DC converters
ID 50 A
1
• Qualified according to JEDEC for target applications

• N-channel

• Logic level
• Excellent gate charge x R DS(on) product (FOM) P-TDSON-8

• Very low on-resistance R DS(on)

• Superior thermal resistance

• Avalanche rated

• dv /dt rated

Type Package Ordering Code Marking

BSC059N03S P-TDSON-8 Q67042-S4222 59N03S

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous drain current ID T C=25 °C 50 A

T C=100 °C 46

T A=25 °C,
17.5
R thJA=45 K/W 2)

Pulsed drain current I D,pulse T C=25 °C3) 200

Avalanche energy, single pulse E AS I D=50 A, R GS=25 Ω 150 mJ

I D=50 A, V DS=24 V,
Reverse diode dv /dt dv /dt di /dt =200 A/µs, 6 kV/µs
T j,max=150 °C

Gate source voltage V GS ±20 V

Power dissipation P tot T C=25 °C 48 W

T A=25 °C,
2.8
R thJA=45 K/W 2)

Operating and storage temperature T j, T stg -55 ... 150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

Rev. 1.11 page 1 2004-02-05

 BSC059N03S

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case R thJC - - 2.6 K/W

Thermal resistance, R thJA minimal footprint - - 62

junction - ambient 6 cm2 cooling area2) - - 45

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 30 - - V

Gate threshold voltage V GS(th) V DS=V GS, I D=35 µA 1.2 1.6 2

V DS=30 V, V GS=0 V,
Zero gate voltage drain current I DSS - 0.1 1 µA
T j=25 °C

V DS=30 V, V GS=0 V,
- 10 100
T j=125 °C

Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA

Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=50 A - 6.9 8.6 mΩ

V GS=10 V, I D=50 A - 4.6 5.5

Gate resistance RG - 0.9 - Ω

|V DS|>2|I D|R DS(on)max,

Transconductance g fs 42 84 - S
I D=50 A

1)
J-STD20 and JESD22
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3

Rev. 1.11 page 2 2004-02-05

 BSC059N03S

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics

Input capacitance C iss - 2010 2670 pF

V GS=0 V, V DS=15 V,
Output capacitance C oss - 720 950
f =1 MHz
Reverse transfer capacitance Crss - 93 140

Turn-on delay time t d(on) - 5.7 8.5 ns

Rise time tr V DD=15 V, V GS=10 V, - 4.8 7.2

Turn-off delay time t d(off) I D=25 A, R G=2.7 Ω - 22 33

Fall time tf - 3.8 5.7

Gate Charge Characteristics4)

Gate to source charge Q gs - 6.3 8.4 nC

Gate charge at threshold Q g(th) - 3.2 4.3

Gate to drain charge Q gd V DD=15 V, I D=25 A, - 4.0 6.0

Q sw V GS=0 to 5 V
Switching charge - 7.1 10

Gate charge total Qg - 15 21

Gate plateau voltage V plateau - 3.1 - V

V DS=0.1 V,
Gate charge total, sync. FET Q g(sync) - 14 18 nC
V GS=0 to 5 V

Output charge Q oss V DD=15 V, V GS=0 V - 17 23

Reverse Diode

Diode continous forward current IS - - 48 A

T C=25 °C
Diode pulse current I S,pulse - - 200

V GS=0 V, I F=48 A,
Diode forward voltage V SD - 0.87 1.1 V
T j=25 °C

V R=15 V, I F=I S,
Reverse recovery charge Q rr - - 10 nC
di F/dt =400 A/µs

4)
See figure 16 for gate charge parameter definition

Rev. 1.11 page 3 2004-02-05

 BSC059N03S
1 Power dissipation 2 Drain current
P tot=f(T C) I D=f(T C); V GS≥10 V

60 60

50

40 40
P tot [W]

I D [A]
30

20 20

10

0 0
0 40 80 120 160 0 40 80 120 160
T C [°C] T C [°C]

3 Safe operation area 4 Max. transient thermal impedance

I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p)
parameter: t p parameter: D =t p/T

103 1000

101 10

limited by on-state
resistance
1 µs

10 µs
102 100

0.5

100 µs 100 1

0.2
Z thJC [K/W]

DC
I D [A]

101 10

0.1
1 ms

0.05
10 ms -1
10 0.1

0.02
0
10 1

0.01

single pulse

10-1 0.1
0.1 1 10 100
10-2 0.01
0 0 0 0 0 0

-1 0 1 2
10 10 10 10 10-6 10-5 10-4 10-3 10-2 10-1
V DS [V] t p [s]

Rev. 1.11 page 4 2004-02-05

 BSC059N03S
5 Typ. output characteristics 6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C
parameter: V GS parameter: V GS

120 25
10 V 4.5 V 2.8 V

4V
3.7 V
3.4 V
100 3.2 V
4V 3V
20

80
15

R DS(on) [mΩ]
3.7 V
I D [A]

60

10
40 3.4 V
4.5 V

3.2 V
5 10 V
20
3V

2.8 V

0 0
0 1 2 3 0 20 40 60 80 100
V DS [V] I D [A]

7 Typ. transfer characteristics 8 Typ. forward transconductance

I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C
parameter: T j

160 100

90
140

80
120
70
100
60
g fs [S]
I D [A]

80 50

40
60

30
40
20
150 °C 25 °C
20
10

0 0
0 1 2 3 4 5 0 10 20 30 40 50 60
V GS [V] I D [A]

Rev. 1.11 page 5 2004-02-05

 BSC059N03S
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=50 A; V GS=10 V V GS(th)=f(T j); V GS=V DS
parameter: I D

10 2.5

8 2

350 µA

98 %
R DS(on) [mΩ]

6 1.5

V GS(th) [V]
35 µA

typ

4 1

2 0.5

0 0
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
T j [°C] T j [°C]

11 Typ. capacitances 12 Forward characteristics of reverse diode

C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD)
parameter: T j

104 10000

1000

Ciss 150 °C 25 °C

150 °C, 98 %
103 1000

Coss 100
C [pF]

I F [A]

25 °C, 98%

Crss
102 100

10

101 10

1
0 10 20 30 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V DS [V] V SD [V]

Rev. 1.11 page 6 2004-02-05

 BSC059N03S
13 Avalanche characteristics 14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=25 A pulsed
parameter: T j(start) parameter: V DD

100 12

15 V
10
100 °C 25 °C
125 °C

6V 24 V
8

V GS [V]
I AV [A]

10 6

1 0
1 10 100 1000 0 10 20 30
t AV [µs] Q gate [nC]

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA

36
V GS
34 Qg

32

30
V BR(DSS) [V]

28

V g s(th)
26

24

22
Q g (th) Q sw Q gate

20 Q gs Q gd
-60 -20 20 60 100 140 180
T j [°C]

Rev. 1.11 page 7 2004-02-05

 BSC059N03S

Package Outline

P-TDSON-8: Outline

Footprint
Dimensions in mm

Rev. 1.11 page 8 2004-02-05

 BSC059N03S

Package Outline

P-TDSON-8: Tape

Dimensions in mm

Rev. 1.11 page 9 2004-02-05

 BSC059N03S

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© Infineon Technologies AG 1999
All Rights Reserved.

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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.

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Rev. 1.11 page 10 2004-02-05

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