SEMICONDUCTOR KTC3551T

TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

RELAY DRIVERS, LAMP DRIVERS,

MOTOR DRIVERS APPLICATION.
E

FEATURES K B
DIM MILLIMETERS
Adoption of MBIT Processes. A _ 0.2
2.9 +
Large Current Capacitance. B 1.6+0.2/-0.1
C _ 0.05
0.70 +
2
Low Collector-to-Emitter Saturation Voltage.

G
3 _ 0.1
D 0.4 +

D
A
E 2.8+0.2/-0.3

F
High-Speed Switching. F _ 0.2
1.9 +
1

G
Ultrasmall Package Facilitates Miniaturization in end Products. G 0.95
H _ 0.05
0.16 +
High Allowable Power Dis sipation. I 0.00-0.10
J 0.25+0.25/-0.15
Complementary to KTA1551T. K 0.60

C
L 0.55

L
MAXIMUM RATING (Ta=25 ) H
I
J J

CHARACTERISTIC SYMBOL RATING UNIT

1. EMITTER
Collector-Base Voltage VCBO 80 V
2. BASE
VCES 80 3. COLLECTOR
Collector-Emitter Voltage V
VCEO 50
Emitter-Base Voltage VEBO 5 V
DC IC 1.0 TSM
Collector Current A
Pulse ICP 3
Base Current IB 200 mA
PC *
Marking
Collector Power Dissipation 0.9 W
Lot No.
Junction Temperature Tj 150
Storage Temperature Range
* Package mounted on a ceramic board (600
Tstg
0.8
-55 150
)
Type Name
HK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=40V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 0.1 A
Collector-Base Breakdown Voltage V(BR)CBO IC=10 A, IE=0 80 - - V
V(BR)CES IC=100 A, VBE=0 80 - - V
Collector-Emitter Breakdown Voltage
V(BR)CEO IC=1mA, IB=0 50 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 5 - - V
VCE(sat)1 IC=500mA, IB=10mA - 130 190 mV
Collector-Emitter Saturation Voltage
VCE(sat)2 IC=300mA, IB=6mA - 90 135 mV
Base-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=10mA - 0.81 1.2 V
DC Current Gain hFE VCE=2V, IC=100mA 200 - 560
Transition Frequency fT VCE=10V, IC=300mA - 420 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz - 6 - pF

PW=20µs IB1
Turn-On Time ton DC <= 1% I B2 - 35 -
OUTPUT
INPUT
RB
RL
Switching tstg
VR
Storage Time 50Ω - 330 - nS
Time
100µF 470µF

Fall Time tf V BE =-5V VCC =25V - 40 -

20IB1=-20IB2=IC =500mA

2001. 6. 28 Revision No : 0 1/3

 KTC3551T

I C - V CE h FE - I C
1K 1K
30mA 10mA
50mA

8mA
COLLECTOR CURRENT I C (A)

40mA 500 Ta=75 C

DC CURRENT GAIN h FE
800
A

6mA
300
20m

Ta=25 C
Ta=-25 C
4mA
600
100
2mA
400
50
30
200

IB=0mA VCE =2V

0 10
0 0.2 0.4 0.6 0.8 1.0 0.01 0.03 0.1 0.3 1.0

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A)

VCE(sat) - I C VCE(sat) - I C
1 1
COLLECTOR-EMITTER SATURATION

COLLECTOR-EMITTER SATURATION

I C /I B =20 I C /I B =50
0.5 0.5
VOLTAGE VCE(sat) (V)
VOLTAGE VCE(sat) (V)

0.3 0.3

0.1 0.1
5 C
C Ta=7 25 C
0.05
=75
C
=-2
5 0.05 Ta=-
Ta Ta C
0.03 0.03 Ta=25
C
25
Ta=

0.01 0.01
0.01 0.03 0.1 0.3 1 0.01 0.03 0.1 0.3 1

COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)

VBE(sat) - I C I C - V BE
10 1.0
I C /I B =50 VCE =2V
BASE-EMITTER SATURATION

0.9
COLLECTOR CURRENT I C (A)

5
0.8
VOLTAGE VBE(sat) (V)

3
0.7
0.6
5 C
5 C

1
5 C

Ta=-25 C 0.5
Ta=7
Ta=2

Ta=-2

Ta=25 C Ta=75 C 0.4

0.5
0.3
0.3
0.2
0.1
0.1 0
0.01 0.03 0.1 0.3 1 0 0.2 0.4 0.6 0.8 1.0 1.2

COLLECTOR CURRENT I C (A) BASE-EMITTER VOLTAGE V BE (V)

2001. 6. 28 Revision No : 0 2/3

 KTC3551T

f T - IC C ob - V CB

COLLECTOR OUTPUT CAPACITANCE

5K 100
TRANSITION FREQUENCY f T (MHz)

VCE =10V f=1MHz

3K
50
30
1K

C ob (pF)
500 10
300
5
3
100

50 1
0.01 0.03 0.1 0.3 1 0.1 0.3 1 3 10 30 100

COLLECTOR CURRENT I C (A) COLLECTOR-BASE VOLTAGE VCB (V)

SAFE OPERATING AREA

5 Pc - Ta
I C MAX.(PULSED)
3 1.2
COLLECTOR POWER DISSIPATION

MOUNTED ON A
10
50
COLLECTOR CURRENT I C (A)

0µ
0µ

1m 1.0 CERAMIC BOARD

S*
S*

1 S*
I C MAX (600mm 2 `0.8mm)
10

(CONTINUOUS) 0.8
m

0.5
S*
10
D

0m

0.3
C

PC (W)
O

S*

0.6
PE
RA
TI
O

0.1 0.4
N

* SINGLE NONREPETITIVE
PULSE Ta=25 C
0.05 CURVES MUST BE DERATED 0.2
0.03 LINEARLY WITH INCREASE
IN TEMPERATURE
MOUNTED ON A CERAMIC BOARD 0
(600mm 2 `0.8mm) 0 20 40 60 80 100 120 140 160
0.01
0.1 0.3 1 3 10 30 100 AMBIENT TEMPERATURE Ta ( C)
COLLECTOR-EMITTER VOLTAGE VCE (V)

2001. 6. 28 Revision No : 0 3/3