Front-End Electronics and Signal Processing: Helmuth Spieler
Front-End Electronics and Signal Processing: Helmuth Spieler
University of Michoacan
Morelia, Michoacan, Mexico
Front-End Electronics
and
Signal Processing
Helmuth Spieler
Physics Division
Lawrence Berkeley National Laboratory
Berkeley, CA 94720
Table of Contents
I. Introduction
Example System
Measured Quantities
Fluctuations
Signal Processing Systems
Acquiring the Detector Signal
IV. Systems
CDF Si Vertex Detector Upgrade
BaBar Silicon Vertex Tracker
ATLAS Silicon Strip and Pixel Systems
VI. Summary
Appendices
I. Introduction
1. Example Detectors
Scintillation detector 10
Ionization Chambers 11
2. The Signal
Magnitude 12
Fluctuations 13
3. The Problem
Filtering 22
Active integrators 35
I. Introduction
Purpose of pulse processing and analysis systems:
BEAM
TRACKING SYSTEM
(IN 2T SOLENOID)
HADRONIC ELECTROMEGNETIC
CALORIMETER CALORIMETER
Schematic End-View
EM Calorimeter Tracking
Hadron
Solenoid Magnet
Calorimeter
Muon
System
Separate particles by
sign of charge
magnetic rigidity q/m
1.2. Calorimetry
⇒ amplitude measurement
position information provided by segmentation
3 cm in diameter, ~ 1 – 6 m long.
TRACK
∆t
Electrons formed along the track drift towards the central wire.
The first electron to reach the high-field region initiates the avalanche,
which is used to derive the timing pulse.
Since the initiation of the avalanche is delayed by the transit time of
the charge from the track to the wire, the time of the avalanche can
be used to determine the radial position.
Although these various detector system look very different, they all
follow the same principles.
Sensors must determine
1. presence of a particle
2. magnitude of signal
3. time of arrival
1. signal magnitude
2. fluctuations
INCIDENT CURRENT
RADIATION PULSE
SCINTILLATOR PHOTOMULTIPLIER
PHOTOMULTIPLIER
Signal Processing
Cdet Vin Ci Ri
tc
v
velocity of charge carriers
dq s
rate of induced charge on
detector electrodes dt
t
Qs
qs
signal charge
2. The Signal
Any form of elementary excitation can be used to detect the radiation
signal.
absorbed energy
Magnitude of signal =
excitation energy
Ionization in semiconductors 1 – 10 eV
Scintillation 20 - 500 eV
Phonons meV
absorbed energy
number of signal quanta =
excitation energy
E
N=
Ei
∆N = FN
∆E = Ei ∆N = FEEi r.m.s.
∆EFWHM = 2.35 × ∆Erms
“electronic noise”
∆E = ∆E fluc
2
+ ∆Eelec
2
G.A. Armantrout, et al., IEEE Trans. Nucl. Sci. NS-19/1 (1972) 107
⇓
25000 photons in scintillator
⇓
15000 photons at photocathode
⇓
3000 photoelectrons at first dynode
⇓
.
3 109 electrons at anode
2 mA peak current
∆E ∆N N 1
= = =
E N N N
Resolution determined by smallest number of quanta in chain, i.e.
number of photoelectrons arriving at first dynode.
In this example
∆E 1
= = 2% r.m.s. = 5% FWHM
E 3000
Typically 7 – 8% obtained, due to non-uniformity of light collection
and gain.
Front-End Electronics and Signal Processing – I. Introduction Helmuth Spieler
2002 ICFA Instrumentation School, Morelia, Mexico LBNL
17
Amplifier’s quiescent
output level (baseline):
(sensitivity x1)
TIME
Signal + Noise
TIME
TIME TIME
TIME TIME
3. The Problem
The signal level is low and must be amplified to allow digitization and
storage.
2. Energy measurement:
noise “smears” signal amplitude
3. Time measurement
noise alters time dependence of signal pulse
Examples:
A (ω )
t [s] ω [radians]
A (ω )
1.0E-07
]
1/2
NOISE VOLTAGE [nV/Hz
1.0E-08
1.0E-09
1.0E+00 1.0E+02 1.0E+04 1.0E+06 1.0E+08
FREQUENCY [Hz]
• noise.
t [s]
t [s]
Does that mean our problem is solved (and the lecture can end)?
Then the raw detector signal is not of the optimum form for the
information that is required.
Functions
Although these subsystems may look very different and use radically
differing technologies, they all tend to comprise the same basic
functions:
Direct conversion:
incident radiation ionizes atoms/molecules in absorber, creating
mobile charges that are detected.
(ionization chambers)
Indirect conversion:
incident radiation excites atomic/molecular states that decay by
emission of light, which in a second step is converted into charge.
(scintillation detectors)
gases 30 eV
semiconductors 1 to 10 eV
scintillators 20 to 500 eV
a)electronic circuitry
4. Pulse shaping
(not always necessary, but always present in some form)
If the shape of the pulse does not change with signal level,
the peak amplitude is also a measure of the energy, so one
often speaks of pulse-height measurements or analysis.
5. Digitization
a) signal magnitude
(analog-to-digital converter, viz. ADC or A/D)
Example:
Vref
comparators decoder
data
output
Typical durations
E ∝ Q s = ∫ is(t) dt
DETECTOR AMPLIFIER
Cdet Vin Ci Ri
v+
v-
t
rate of induced charge on dq s
detector electrodes dt
t
Qs
signal charge qs
t
if Ri x (Cdet + Ci ) >> collection time
Qs
peak voltage at amplifier input Vin =
Cdet + Ci
↑
Magnitude of voltage depends on detector capacitance!
0.5 electrons
holes
Signal Current [ µ A]
0.4 total
0.3
0.2
0.1
0.0
0 5 10 15 20 25 30
Time [ns]
0.4
0.3
0.2
0.1
0.0
0 5 10 15 20 25 30
Time [ns]
Although both pulses originate from the same particle track, the
shapes are very different.
Front-End Electronics and Signal Processing – I. Introduction Helmuth Spieler
2002 ICFA Instrumentation School, Morelia, Mexico LBNL
33
Qs = ∫ is dt
is the same.
4.0
3.5
Signal Charge [fC]
3.0
2.5 electrons
2.0 holes
total
1.5
1.0
0.5
0.0
0 5 10 15 20 25 30
Time [ns]
4.0
3.5
Signal Charge [fC]
3.0
2.5 electrons
holes
2.0 total
1.5
1.0
0.5
0.0
0 5 10 15 20 25 30
Time [ns]
Front-End Electronics and Signal Processing – I. Introduction Helmuth Spieler
2002 ICFA Instrumentation School, Morelia, Mexico LBNL
34
When the input time constant RC is much greater than the signal
duration, the peak voltage is a measure of the charge
1 Qs
C∫
V = is dt =
C
dVo A ⋅ vi A A 1 1
AQ = = = = ⋅ ≈ ( A >> 1)
dQi Ci ⋅ vi Ci A + 1 Cf Cf
Qi Civi C Qs
= = i ⋅
Qs Qdet + Qi Qs Ci + Cdet
1
= ≈ 1 (if Ci >> Cdet )
C det
1+
Ci
Example:
A = 103
Cf = 1 pF ⇒ Ci = 1 nF
↑
Si Det.: 50 µm thick
500 mm2 area
Calibration
Inject specific quantity of charge - measure system response
⇒ QT = ∆V . CT
Accurate expression:
CT CT
QT = ⋅ ∆V ≈ CT 1 − ∆V
CT Ci
1+
Ci
Equivalent Circuit:
DETECTOR AMPLIFIER
iin
is Cdet vin R
↑ ↑
charges moving in detector capacitance
detector induce change discharges into amplifier
of charge on detector
electrodes
A Simple Amplifier
V+
RL
io Co
vo
vi
Voltage gain:
dvo dio
AV = = ⋅ ZL ≡ gm ZL
dvi dvi
gm ≡ transconductance
Z L = RL // Co
−1
1 1 1
= + iω Co ⇒ AV = gm + iω Co
Z L RL RL
↑ ↑
low freq. high freq.
gm RL
log AV gm
-i
ωCo
1 log ω
RL Co
A voltage step vi (t) at the input causes a current step i o (t) at the
output of the transistor.
For the output voltage to change, the output capacitance Co must first
charge up.
1 log ω V = Vo (1 − e −t / τ )
RL Co
1
τ=
2π f u
Zf Zf
Zi = ≈ ( A >> 1)
A +1 A
ω0
A = −i
ω
CD + C f
Af = ( A f << A0 )
Cf
CD
Af ≈ (C D >> C f )
Cf
τ i = Ri C D
1
τi = ⋅ C D = τ amp
ω 0C f
strip detector
electrodes
For strip pitches that are smaller than the bulk thickness the
capacitance is dominated by the fringing capacitance to the
neighboring strips CSS.