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TS5A63157

SCDS203B – DECEMBER 2005 – REVISED MARCH 2019

TS5A63157 12-Ω SPDT analog switch

5-V/3.3-V single-channel 2:1 multiplexer/demultiplexer
1 Features 3 Description
•
1 Overshoot and Undershoot Voltage Protection The TS5A63157 is a single-pole, double-throw
(SPDT) analog switch designed to operate from
• Isolation in Powered-Off Mode, V+ = 0 V 1.65 V to 5.5 V. This device can handle both digital
• Specified Break-Before-Make Switching and analog signals. Signals up to V+ (peak) can be
• Low ON-State Resistance (12 Ω) transmitted in either direction.
• Control Inputs Are 5-V Tolerant TI has integrated overshoot and undershoot
• Low Charge Injection protection circuitry. The TS5A63157 senses
overshoot and undershoot events at the I/Os and
• Excellent ON-State Resistance Matching
responds by preventing voltage differentials from
• Low Total Harmonic Distortion (THD) developing and turning the switch on.
• 1.65-V to 5.5-V Single-Supply Operation
• Latch-Up Performance Exceeds 100 mA Per Device Information(1)
JESD 78, Class II PART NUMBER PACKAGE BODY SIZE (NOM)

• ESD Performance Tested Per JESD 22 SOT-23 (DBV) 2.90 mm x 1.60 mm

TS5A63157
SC-70 (DCK) 2.00 mm x 1.25 mm
– 2000-V Human-Body Model (A114-B, Class II)
– 1000-V Charged-Device Model (C101) (1) For all available packages, see the orderable addendum at
the end of the data sheet.

2 Applications
• Sample-and-Hold Circuits
• Battery-Powered Equipment
• Audio and Video Signal Routing
• Communication Circuits
Block Diagram

TS5A63157

NO
COM
NC

IN

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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Table of Contents
1 Features .................................................................. 1 8.2 Functional Block Diagram ....................................... 21
2 Applications ........................................................... 1 8.3 Feature Description................................................. 21
3 Description ............................................................. 1 8.4 Device Functional Modes........................................ 21
4 Revision History..................................................... 2 9 Application and Implementation ........................ 22
9.1 Application Information............................................ 22
5 Pin Configuration and Functions ......................... 3
9.2 Typical Application ................................................. 22
6 Specifications......................................................... 4
6.1 Absolute Minimum and Maximum Ratings .............. 4 10 Power Supply Recommendations ..................... 23
6.2 ESD Ratings.............................................................. 4 11 Layout................................................................... 23
6.3 Recommended Operating Conditions....................... 4 11.1 Layout Guidelines ................................................. 23
6.4 Thermal Information .................................................. 4 11.2 Layout Example .................................................... 23
6.5 Electrical Characteristics for 5-V Supply................... 5 12 Device and Documentation Support ................. 24
6.6 Electrical Characteristics for 3.3-V Supply................ 7 12.1 Receiving Notification of Documentation Updates 24
6.7 Electrical Characteristics for 2.5-V Supply................ 9 12.2 Community Resources.......................................... 24
6.8 Electrical Characteristics for 1.8-V Supply.............. 11 12.3 Trademarks ........................................................... 24
6.9 Typical Characteristics ............................................ 13 12.4 Electrostatic Discharge Caution ............................ 24
7 Parameter Measurement Information ................ 15 12.5 Glossary ................................................................ 24
8 Detailed Description ............................................ 21 13 Mechanical, Packaging, and Orderable
8.1 Overview ................................................................. 21
Information ........................................................... 24

4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision A (August 2009) to Revision B Page

• Added Device Information table, ESD Ratings table, Recommended Operating Conditions table, Thermal
Information table, Feature Description section, Device Functional Modes, Application and Implementation section,
Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section. ................................................................................................ 1
• Deleted the YEP or YZP package option .............................................................................................................................. 3
• Deleted 2 table notes from the Absolute Minimum and Maximum Ratings : "The input and output voltage ratings..."
and "This value is limited to 5.5 V maximum." ...................................................................................................................... 4

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5 Pin Configuration and Functions

DBV or DCK Package

SOT-23 or SC-70 (6 Pin)
Top View

NO 1 6 IN

GND 2 5 V+

NC 3 4 CO M

No t to scale

Pin Functions
PIN
DESCRIPTION
NAME NO.
NO 1 Normally open
GND 2 Digital ground
NC 3 Normally closed
COM 4 Common
V+ 5 Power supply
IN 6 Digital control. Logic H = COM to NO, Logic = L COM to NC

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6 Specifications
6.1 Absolute Minimum and Maximum Ratings (1) (2)

over operating free-air temperature range (unless otherwise noted)

MIN MAX UNIT
V+ Supply voltage range (3) –0.5 6.5 V
VNO
VNC Analog voltage range (3) –0.5 V+ + 0.5 V
VCOM
IK Analog port diode current VNC, VNO, VCOM < 0 or VNO, VNC, VCOM > V+ –50 50 mA
INO
INC On-state switch current VNC, VNO, VCOM = 0 to V+ –50 50 mA
ICOM
VI Digital input voltage range (3) –0.5 6.5 V
IIK Digital input clamp current VI < 0 –50 mA
I+ Continuous current through V+ –100 100 mA
IGND Continuous current through GND –100 100 mA
Tstg Storage temperature range –65 150 °C

(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
(3) All voltages are with respect to ground, unless otherwise specified.

6.2 ESD Ratings

VALUE UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000
V(ESD) Electrostatic discharge Charged-device model (CDM), per JEDEC specification JESD22-C101 V
±1000
or V ANSI/ESDA/JEDEC JS-002 (2)

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
V+ Supply voltage range 1.65 5.5 V
VNO VNC VCOM Analog voltage range 0 V+ V
VI Digital input voltage range 0 5.5 V

6.4 Thermal Information

TS5A63157
THERMAL METRIC (1) DBV DCK UNIT
6 PINS 6 PINS
RθJA Junction-to-ambient thermal resistance 209.9 298.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 147.1 103.9 °C/W
RθJB Junction-to-board thermal resistance 82.8 107.0 °C/W
ψJT Junction-to-top characterization parameter 65.3 2.7 °C/W
ψJB Junction-to-board characterization parameter 82.5 106.2 °C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC package thermal metrics application
report.

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6.5 Electrical Characteristics for 5-V Supply

V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS TA V+ MIN TYP MAX UNIT
Analog Switch
Analog signal VCOM, VNO,
0 V+ V
range VNC
Voltage
VIKU 0 ≥ (INC, INO, or ICOM) ≥ –50 mA 5.5 V –2 V
undershoot
Peak ON-state 0 ≤ (VNO or VNC) ≤ V+, Switch ON, 25°C 4.6 11
rpeak 4.5 V Ω
resistance ICOM = –30 mA, See Figure 13 Full 13
VNO or VNC = 0, 25°C 4 6.5
ICOM = 30 mA
Full 8
ON-state VNO or VNC = 2.4 V, Switch ON, 25°C 4 8
ron ICOM = –30 mA 4.5 V Ω
resistance See Figure 13 Full 10
VNO or VNC = 4.5 V, 25°C 5.5 10
ICOM = –30 mA
Full 12
ON-state 25°C 0.1 0.14
resistance
VNO or VNC = 3.15 V, Switch ON,
match Δron 4.5 V Ω
ICOM = –30 mA, See Figure 13 Full 0.15
between
channels
ON-state 25°C 1.5 2
0 ≤ (VNO or VNC) ≤ V+, Switch ON,
resistance ron(flat) 4.5 V Ω
ICOM = –30 mA, See Figure 13 Full 4
flatness
INC(OFF), VNC or VNO = 0 to V+, Switch OFF, 25°C 0.001 0.03
5.5 V
NC, NO INO(OFF) VCOM = V+ to 0 See Figure 14 Full 0.05
OFF leakage μA
current INC(PWROFF), VNC or VNO = 0 to 5.5 V, Switch OFF, 25°C 0.15 1
0
INOPWROFF) VCOM = 5.5 V to 0, See Figure 14 Full 5
COM 25°C 0.2 1
VCOM = 0 to 5.5 V, Switch ON,
OFF leakage ICOM(PWROFF) 0 μA
VNC or VNO = 5.5 V to 0, See Figure 14 Full 10
current
NC, NO 25°C 0.001 0.01
INC(ON), VNC or VNO = 0 to V+, Switch ON,
ON leakage 5.5 V μA
INO(ON) VCOM = Open, See Figure 15 Full 0.02
current
COM 25°C 0.003 0.03
VNC or VNO = Open, Switch ON,
ON leakage ICOM(ON) 5.5 V μA
VCOM = 0 to V+, See Figure 15 Full 0.05
current
Digital Control Input (IN)
Input logic V+
VIH Full 5.5 V
high × 0.7
V+
Input logic low VIL Full 0 V
× 0.3
Input leakage 25°C 0.05 0.1
IIH, IIL VI = 5.5 V or 0 5.5 V μA
current Full 0.02

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Electrical Characteristics for 5-V Supply (continued)

V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS TA V+ MIN TYP MAX UNIT
Dynamic
25°C 5V 2 3.4 5
VCOM = V+ or GND, CL = 50 pF,
Turn-on time tON 4.5 V to ns
RL = 500 Ω, See Figure 17 Full 2 5.5
5.5 V
25°C 5V 1 2.8 3.4
VCOM = V+ or GND, CL = 50 pF,
Turn-off time tOFF 4.5 V to ns
RL = 500 Ω, See Figure 17 Full 1 3.8
5.5 V
Output voltage
VOH
during VOUTU See Figure 18 2.5 V
– 0.3
undershoot
Output voltage
VOL
during VOUTO See Figure 18 2 V
+ 0.3
overshoot
25°C 5V 0.5 5 12
Break-before- VNC = VNO = V+/2, CL = 50 pF,
tBBM 4.5 V to ns
make time RL = 50 Ω, See Figure 19 Full 0.5 14
5.5 V
Charge VGEN = 0, CL = 0.1 nF,
QC 25°C 5V –21 pC
injection RGEN = 0, See Figure 23
NC, NO
CNC(OFF), VNC or VNO = V+ or GND,
OFF See Figure 16 25°C 5V 5 pF
CNO(OFF) Switch OFF,
capacitance
NC, NO
CNC(ON), VNC or VNO = V+ or GND,
ON See Figure 16 25°C 5V 14.5 pF
CNO(ON) Switch ON,
capacitance
COM
VCOM = V+ or GND,
ON CCOM(ON) See Figure 16 25°C 5V 14.5 pF
Switch ON,
capacitance
Digital input
CI VI = V+ or GND, See Figure 16 25°C 5V 2.5 pF
capacitance
RL = 50 Ω,
Bandwidth BW See Figure 20 25°C 5V 371 MHz
Switch ON,
RL = 50 Ω, Switch OFF,
OFF isolation OISO 25°C 5V –61 dB
f = 10 MHz, See Figure 21
RL = 50 Ω, Switch ON,
Crosstalk XTALK 25°C 5V –61 dB
f = 10 MHz, See Figure 22
Total harmonic RL = 600 Ω, f = 20 Hz to 20 kHz,
THD 25°C 5V 0.06%
distortion CL = 50 pF, See Figure 24
Supply
Positive 25°C 0.01 0.1
I+ VI = V+ or GND, Switch ON or OFF 5.5 V μA
supply current Full 0.75

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6.6 Electrical Characteristics for 3.3-V Supply

V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS TA V+ MIN TYP MAX UNIT
Analog Switch
Analog signal VCOM, VNO,
0 V+ V
range VNC
Voltage
VIKU 0 ≥ (INC, INO, or ICOM) ≥ –50 mA 3.6 V V
undershoot
Peak ON-state 0 ≤ (VNO or VNC) ≤ V+, Switch ON, 25°C 6.4 14
rpeak 3V Ω
resistance ICOM = –24 mA, See Figure 13 Full 18
VNO or VNC = 0, 25°C 4.8 8
ICOM = 24 mA Full 10
ON-state Switch ON,
ron 3V Ω
resistance See Figure 13 25°C 6.3 12
VNO or VNC = 3 V,
ICOM = –24 mA Full 15
ON-state 25°C 0.1 0.2
resistance
VNO or VNC = 2.1 V, Switch ON,
match Δron 3V Ω
ICOM = –24 mA, See Figure 13 Full 0.2
between
channels
ON-state 25°C 2.8 4
0 ≤ (VNO or VNC) ≤ V+, Switch ON,
resistance ron(flat) 3V Ω
ICOM = –24 mA, See Figure 13 Full 7
flatness
INC(OFF), VNC or VNO = 0 to V+, Switch OFF, 25°C 0 0.03
3.6 V
NC, NO INO(OFF) VCOM = V+ to 0 See Figure 14 Full 0.05
OFF leakage μA
current INC(PWROFF), VNC or VNO = 0 to 3.6 V, Switch OFF, 25°C 0.15 0.50
0
INOPWROFF) VCOM = 3.6 V to 0, See Figure 14 Full 2
COM 25°C 0.2 0.5
VCOM = 0 to 3.6 V, Switch ON,
OFF leakage ICOM(PWROFF) 0 μA
VNC or VNO = 3.6 V to 0, See Figure 14 Full 5
current
NC, NO 25°C 0.001 0.01
INC(ON), VNC or VNO = 0 to V+, Switch ON,
ON leakage 3.6 V μA
INO(ON) VCOM = Open, SeeFigure 15 Full 0.02
current
COM 25°C 0.003 0.03
VNC or VNO = Open, Switch ON,
ON leakage ICOM(ON) 3.6 V μA
VCOM = 0 to V+, See Figure 15 Full 0.05
current
Digital Control Input (IN)
Input logic V+ 5.5
VIH Full V
high × 0.7
0 V+
Input logic low VIL Full V
× 0.3
Input leakage 25°C 0.005 0.01
IIH, IIL VI = 5.5 V or 0 3.6 V μA
current Full 0.02

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Electrical Characteristics for 3.3-V Supply (continued)

V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS TA V+ MIN TYP MAX UNIT
Dynamic
25°C 3.3 V 2 4.3 6.6
VCOM = V+ or GND, CL = 50 pF,
Turn-on time tON 3 V to ns
RL = 500 Ω, See Figure 17 Full 2 7
3.6 V
25°C 3.3 V 1 3.3 6.3
VCOM = V+ or GND, CL = 50 pF,
Turn-off time tOFF 3 V to ns
RL = 500 Ω, See Figure 17 Full 1 7
3.6 V
Output voltage
VOH
during VOUTU See Figure 18 2.5 V
– 0.3
undershoot
Output voltage
VOL
during VOUTO See Figure 18 2 V
+ 0.3
overshoot
25°C 3.3 V 0.5 7 17
Break-before- VNC = VNO = V+/2, CL = 50 pF,
tBBM 3 V to ns
make time RL = 50 Ω, See Figure 19 Full 0.5 19.5
3.6 V
Charge VGEN = 0, CL = 0.1 nF,
QC 25°C 3.3 V –11.5 pC
injection RGEN = 0, See Figure 23
NC, NO
CNC(OFF), VNC or VNO = V+ or GND,
OFF See Figure 16 25°C 3.3 V 5 pF
CNO(OFF) Switch OFF,
capacitance
NC, NO
CNC(ON), VNC or VNO = V+ or GND,
ON See Figure 16 25°C 3.3 V 15 pF
CNO(ON) Switch ON,
capacitance
COM
VCOM = V+ or GND,
ON CCOM(ON) See Figure 16 25°C 3.3 V 15 pF
Switch ON,
capacitance
Digital input
CI VI = V+ or GND, See Figure 16 25°C 3.3 V 2.5 pF
capacitance
RL = 50 Ω,
Bandwidth BW See Figure 20 25°C 3.3 V 370 MHz
Switch ON,
RL = 50 Ω, Switch OFF,
OFF isolation OISO 25°C 3.3 V –60 dB
f = 10 MHz, See Figure 21
RL = 50 Ω, Switch ON,
Crosstalk XTALK 25°C 3.3 V –60 dB
f = 10 MHz, See Figure 22
Total harmonic RL = 600 Ω, f = 20 Hz to 20 kHz,
THD 25°C 3.3 V 0.1%
distortion CL = 50 pF, See Figure 24
Supply
Positive 25°C 0.05 0.1
I+ VI = V+ or GND, Switch ON or OFF 3.6 V μA
supply current Full 0.6

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6.7 Electrical Characteristics for 2.5-V Supply

V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS TA V+ MIN TYP MAX UNIT
Analog Switch
Analog signal VCOM, VNO,
0 V+ V
range VNC
Voltage
VIKU 0 mA ≥ (INC, INO, or ICOM) ≥ –50 mA 2.7 V V
undershoot
Peak ON-state 0 ≤ (VNO or VNC) ≤ V+, Switch ON, 25°C 9.2 30
rpeak 2.3 V Ω
resistance ICOM = –8 mA, See Figure 13 Full 35
VNO or VNC = 0, 25°C 5.4 8.5
ICOM = 8 mA Full 12
ON-state Switch ON,
ron 2.3 V Ω
resistance See Figure 13 25°C 8.6 15.5
VNO or VNC = 2.3 V,
ICOM = –8 mA Full 25
ON-state 25°C 0.05 0.3
resistance
VNO or VNC = 1.6 V, Switch ON,
match Δron 2.3 V Ω
ICOM = –8 mA, See Figure 13 Full 0.5
between
channels
ON-state 25°C 5 9
0 ≤ (VNO or VNC) ≤ V+, Switch ON,
resistance ron(flat) 2.3 V Ω
ICOM = –8 mA, See Figure 13 Full 15
flatness
INC(OFF), VNC or VNO = 0 to V+, Switch OFF, 25°C 0 0.03
2.7 V
NC, NO INO(OFF) VCOM = V+ to 0, See Figure 14 Full 0.05
OFF leakage μA
current INC(PWROFF), VNC or VNO = 0 to 2.7 V, Switch OFF, 25°C 0.15 0.50
0
INOPWROFF) VCOM = 2.7 V to 0, See Figure 14 Full 0.75
COM VCOM = 0 to 2.7 V, 25°C 0.2 0.5
Switch ON,
OFF leakage ICOM(PWROFF) VNC or VNO = 2.7 V to 0, 0 μA
See Figure 14 Full 1
current
NC, NO VNC or VNO = 0 to V+, 25°C 0.001 0.01
INC(ON), Switch ON,
ON leakage VCOM = Open, 2.7 V μA
INO(ON) See Figure 15 Full 0.02
current
COM 25°C 0.003 0.03
VNC or VNO = Open, Switch ON,
ON leakage ICOM(ON) 2.7 V μA
VCOM = 0 to V+, See Figure 15 Full 0.05
current
Digital Control Input (IN)
Input logic V+
VIH Full 5.5 V
high × 0.75
VIL Full 0 V+
Input logic low V
× 0.25
Input leakage 25°C 0.005 0.01
IIH, IIL VI = 5.5 V or 0 2.7 V μA
current Full 0.02

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Electrical Characteristics for 2.5-V Supply (continued)

V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS TA V+ MIN TYP MAX UNIT
Dynamic
25°C 2.5 V 3 5.8 9.6
VCOM = V+ or GND, CL = 50 pF,
Turn-on time tON 2.3 V to ns
RL = 500 Ω, See Figure 17 Full 3 12
2.7 V
25°C 2.5 V 1.5 4.5 7.3
VCOM = V+ or GND, CL = 50 pF,
Turn-off time tOFF 2.3 V to ns
RL = 500 Ω, See Figure 17 Full 1.5 7.5
2.7 V
Output voltage
VOH
during VOUTU See Figure 18 2.5 V
– 0.3
undershoot
Output voltage
VOL
during VOUTO See Figure 18 2 V
+ 0.3
overshoot
25°C 2.5 V 0.5 10 25
Break-before- VNC = VNO = V+/2, CL = 50 pF,
tBBM 2.3 V to ns
make time RL = 50 Ω, See Figure 19 Full 0.5 28.5
2.7 V
Charge VGEN = 0, CL = 0.1 nF,
QC 25°C 2.5 V –8 pC
injection RGEN = 0, See Figure 23
NC, NO
CNC(OFF), VNC or VNO = V+ or GND,
OFF See Figure 16 25°C 2.5 V 5 pF
CNO(OFF) Switch OFF,
capacitance
NC, NO
CNC(ON), VNC or VNO = V+ or GND,
ON See Figure 16 25°C 2.5 V 15 pF
CNO(ON) Switch ON,
capacitance
COM
VCOM = V+ or GND,
ON CCOM(ON) See Figure 16 25°C 2.5 V 15 pF
Switch ON,
capacitance
Digital input
CI VI = V+ or GND, See Figure 16 25°C 2.5 V 2.5 pF
capacitance
RL = 50 Ω,
Bandwidth BW See Figure 20 25°C 2.5 V 367 MHz
Switch ON,
RL = 50 Ω, Switch OFF,
OFF isolation OISO 25°C 2.5 V –60 dB
f = 10 MHz, See Figure 21
RL = 50 Ω, Switch ON,
Crosstalk XTALK 25°C 2.5 V –60 dB
f = 10 MHz, SeeFigure 22
Total harmonic RL = 600 Ω, f = 20 Hz to 20 kHz,
THD 25°C 2.5 V 0.15%
distortion CL = 50 pF, See Figure 24
Supply
Positive 25°C 0.05 0.1
I+ VI = V+ or GND, Switch ON or OFF 2.7 V nA
supply current Full 0.5

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6.8 Electrical Characteristics for 1.8-V Supply

V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS TA V+ MIN TYP MAX UNIT
Analog Switch
Analog signal VCOM, VNO,
0 V+ V
range VNC
Voltage
VIKU 0 ≥ (INC, INO, or ICOM) ≥ –50 mA 1.95 V V
undershoot
Peak ON-state 0 ≤ (VNO or VNC) ≤ V+, Switch ON, 25°C 13.8 60
rpeak 1.65 V Ω
resistance ICOM = –4 mA, See Figure 13 Full 120
VNO or VNC = 0, 25°C 5.9 15
ICOM = 4 mA Full 15
ON-state Switch ON,
ron 1.65 V Ω
resistance See Figure 13 25°C 12.8 40
VNO or VNC = 1.65 V,
ICOM = –4 mA Full 45
ON-state 25°C 0.1 0.5
resistance
VNO or VNC = 1.15 V, Switch ON,
match Δron 1.65 V Ω
ICOM = –4 mA, See Figure 13 Full 0.8
between
channels
ON-state 25°C 26.5 60
0 ≤ (VNO or VNC) ≤ V+, Switch ON,
resistance ron(flat) 1.65 V Ω
ICOM = –4 mA, See Figure 13 Full 80
flatness
INC(OFF), VNC or VNO = 0 to V+, Switch OFF, 25°C 0 0.03
1.95 V
NC, NO INO(OFF) VCOM = V+ to 0, See Figure 14 Full 0.05
OFF leakage μA
current INC(PWROFF), VNC or VNO = 0 to 1.95 V, Switch OFF, 25°C 0.15 0.50
0
INOPWROFF) VCOM = 1.95 V to 0, See Figure 14 Full 0.75
COM 25°C 0.2 0.5
VCOM = 0 to 1.95 V, Switch ON,
OFF leakage ICOM(PWROFF) 0 μA
VNC or VNO = 1.95 V to 0, See Figure 14 Full 1
current
NC, NO 25°C 0.001 0.01
INC(ON), VNC or VNO = 0 to V+, Switch ON,
ON leakage 1.95 V μA
INO(ON) VCOM = Open, See Figure 15 Full 0.02
current
COM 25°C 0.003 0.03
VNC or VNO = Open, Switch ON,
ON leakage ICOM(ON) 1.95 V μA
VCOM = 0 to V+, See Figure 15 Full 0.05
current
Digital Control Input (IN)
Input logic V+
VIH Full 5.5 V
high × 0.75
VIL Full V+
Input logic low 0 V
× 0.25
Input leakage 25°C 0.005 0.01
IIH, IIL VI = 5.5 V or 0 1.95 V μA
current Full 0.02

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Electrical Characteristics for 1.8-V Supply (continued)

V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS TA V+ MIN TYP MAX UNIT
Dynamic
25°C 1.8 V 9.5 23
VCOM = V+ or GND, CL = 50 pF,
Turn-on time tON 1.65 V to ns
RL = 500 Ω, See Figure 17 Full 24
1.95 V
25°C 1.8 V 5.9 10
VCOM = V+ or GND, CL = 50 pF,
Turn-off time tOFF 1.65 V to ns
RL = 500 Ω, See Figure 17 Full 12
1.95 V
Output voltage
VOH
during VOUTU See Figure 18 2.5 V
– 0.3
undershoot
Output voltage
VOL
during VOUTO See Figure 18 2 V
+ 0.3
overshoot
25°C 1.8 V 0.5 18 50
Break-before- VNC = VNO = V+/2, CL = 50 pF,
tBBM 1.65 V to ns
make time RL = 50 Ω, See Figure 19 Full 0.5 55
1.95 V
Charge VGEN = 0, CL = 0.1 nF,
QC 25°C 1.8 V –5 pC
injection RGEN = 0, See Figure 23
NC, NO
CNC(OFF), VNC or VNO = V+ or GND,
OFF See Figure 16 25°C 1.8 V 5.5 pF
CNO(OFF) Switch OFF,
capacitance
NC, NO
CNC(ON), VNC or VNO = V+ or GND,
ON See Figure 16 25°C 1.8 V 15.5 pF
CNO(ON) Switch ON,
capacitance
COM
VCOM = V+ or GND,
ON CCOM(ON) See Figure 16 25°C 1.8 V 15.5 pF
Switch ON,
capacitance
Digital input
CI VI = V+ or GND, See Figure 16 25°C 1.8 V 2.5 pF
capacitance
RL = 50 Ω,
Bandwidth BW See Figure 20 25°C 1.8 V 369 MHz
Switch ON,
RL = 50 Ω, Switch OFF,
OFF isolation OISO 25°C 1.8 V –60 dB
f = 10 MHz, See Figure 21
RL = 50 Ω, Switch ON,
Crosstalk XTALK 25°C 1.8 V –60 dB
f = 10 MHz, See Figure 22
Total harmonic RL = 600 Ω, f = 20 Hz to 20 kHz,
THD 25°C 1.8 V 0.4%
distortion CL = 50 pF, See Figure 24
Supply
Positive 25°C 0.05 0.06
I+ VI = V+ or GND, Switch ON or OFF 1.95 V μA
supply current Full 0.3

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6.9 Typical Characteristics

60 12
85°C
50 10
25°C
40 8

ron (Ω)
ron (W)

–40°C
30 6
V+ = 1.8 V
20 4
V+ = 2.5 V
V+ = 3.3 V V = 5 V
10 + 2

0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VCOM (V) VCOM (V)
Figure 1. ron vs VCOM Figure 2. ron vs VCOM (V+ = 3 V)
9 0.00500
85°C 0.00450 COM (ON)
8

Leakage Current (nA)

0.00400
7
0.00350
6 0.00300
25°C
ron (Ω)

5 0.00250 NO/NC (OFF)

4 –40°C 0.00200
3 0.00150
0.00100
2
0.00050 NO/NC (ON)
1 0.00000
0 −0.00050
0 1 2 3 4 5 −40 25 85
VCOM (V)
TA (°C)
Figure 3. ron vs VCOM (V+ = 5 V) Figure 4. Leakage Current vs Temperature (V+ = 5.5 V)
20 14
V+ = 5 V
12 tON
V+ = 3.3 V
10 V+ = 2.5 V
10
Charge Injection (pC)

tON/tOFF (ns)

V+ = 1.8 V
8 tOFF
0
6

4
−10
2

−20 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6
Bias Voltage (V)
V+ (V)
Figure 5. Charge Injection (QC) vs VCOM
Figure 6. tON and tOFF vs Supply Voltage

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Typical Characteristics (continued)

4 2.5

Logic-Level Threshold (nA)

tON
2.0
3 VIN Rising
tOFF
1.5
VIN Falling
tON/tOFF (ns)

2
1.0

1
0.5

0 0.0
−40 25 85 0 1 2 3 4 5 6
TA (°C) V+ (V)
Figure 7. tON and tOFF vs Temperature (V+ = 5 V) Figure 8. Logic-Level Threshold vs V+
0 0

−1 −20

Crosstalk

Attenuation (dB)
−2 −40
Gain (dB)

−3 −60

−4 −80 OFF Isolation

−5 −100

−6 −120
0.1 1 10 100 1000 0.1 1 10 100 1000
Frequency (MHz) Frequency (MHz)
Figure 9. Bandwidth (V+ = 3.3 V) Figure 10. OFF Isolation and Crosstalk (V+ = 3.3 V)
0.064 250

0.062 200
THD + (%)

0.060 150
ICC+ (nA)

0.058 100

0.056 50

0.054 0
10 100
1K 10K 100K −60 −40 −20 0 20 40 60 80 100
Frequency (Hz)
TA (°C)
Figure 11. Total Harmonic Distortion (THD) vs Frequency
Figure 12. Power-Supply Current vs Temperature (V+ = 5 V)
(V+ = 3.3 V)

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7 Parameter Measurement Information

Table 1. Parameter Description
SYMBOL DESCRIPTION
VCOM Voltage at COM
VNC Voltage at NC
VNO Voltage at NO
ron Resistance between COM and NC or COM and NO ports when the channel is ON
rpeak Peak on-state resistance over a specified voltage range
Δron Difference of ron between channels in a specific device
ron(flat) Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
INC(OFF) Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state
INC(PWROFF) Leakage current measured at the NC port during the power-down condition, V+ = 0
INO(OFF) Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state
INO(PWROFF) Leakage current measured at the NO port during the power-down condition, V+ = 0
INC(ON) Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output (COM) open
INO(ON) Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output (COM) open
Leakage current measured at the COM port, with the corresponding channel (COM to NO or COM to NC) in the ON state and the output
ICOM(ON)
(NC or NO) open
ICOM(PWROFF) Leakage current measured at the COM port during the power-down condition, V+ = 0
VIH Minimum input voltage for logic high for the control input (IN)
VIL Maximum input voltage for logic low for the control input (IN)
VI Voltage at the control input (IN)
IIH, IIL Leakage current measured at the control input (IN)
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation delay between the
tON
digital control (IN) signal and analog output (COM or NO) signal when the switch is turning ON.
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation delay between the
tOFF
digital control (IN) signal and analog output (COM or NO) signal when the switch is turning OFF.
Break-before-make time. This parameter is measured under the specified range of conditions and by the propagation delay between the
tBBM
output of two adjacent analog channels (NC and NO) when the control signal changes state.
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM) output. This is
QC measured in coulomb (C) and measured by the total charge induced due to switching of the control input.Charge injection, QC = CL ×
ΔVCOM, CL is the load capacitance and ΔVCOM is the change in analog output voltage.
CNC(OFF) Capacitance at the NC port when the corresponding channel (NC to COM) is OFF
CNO(OFF) Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
CNC(ON) Capacitance at the NC port when the corresponding channel (NC to COM) is ON
CNO(ON) Capacitance at the NO port when the corresponding channel (NO to COM) is ON
CCOM(ON) Capacitance at the COM port when the corresponding channel (COM to NC or COM to NO) is ON
CI Capacitance of control input (IN)
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific frequency, with the
OISO
corresponding channel (NC to COM or NO to COM) in the OFF state.
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC to NO or NO to NC). This is
XTALK
measured in a specific frequency and in dB.
BW Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
Total harmonic distortion is defined as the ratio of the root mean square (RMS) value of the second, third, and higher harmonics to the
THD
magnitude of fundamental harmonic.
I+ Static power-supply current with the control (IN) pin at V+ or GND
Output voltage during an undershoot event. This is measured by turning off a specific channel and applying an undershoot voltage at the
VOUTU
input of the switch.
Output voltage during an overshoot event. This is measured by turning off a specific channel and applying an overshoot voltage at the
VOUTO
input of the switch.

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V+

VNC NC
COM VCOM Chann el O N
+
VNO NO
V COM V NO or V NC
r on :
ICOM I COM
VI IN

+
VI V IH or V IL

GND

Figure 13. ON-State Resistance (ron)

V+

VNC NC
COM VCOM
+
+ OFF-State L eakage Current
VNO NO
Chann el O FF

VI IN VI V IH or V IL
+

GND

Figure 14. OFF-State Leakage Current

(INC(OFF), INC(PWROFF), INO(OFF), INO(PWROFF), ICOM(OFF), ICOM(PWROFF))

V+

VNC NC
COM
+ VCOM
ON-State L eakage Current
VNO NO
Chann el O N

IN VI V IH or V IL
VI
+

GND

Figure 15. ON-State Leakage Current (ICOM(ON), INC(ON), INO(ON))

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V+

VNC NC
Capacitance
Meter V BIAS V or GND
VBIAS VNO NO VI V or GND
VCOM COM
IN Capacitance i s measured at NC,
NO, COM, and IN inp uts during
VI
ON and OFF conditions.

GND

Figure 16. Capacitance (CIN, CCOM(ON), CNC(OFF), CNO(OFF), CNC(ON), CNO(ON))

V+
2uV
RL S1
Ope n
NC or NO
VCOM GND
CL RL
COM NC or NO

CL RL
IN
VI

Log ic
Input (1)
GND V+
Log ic In put
50 % 50 %
(VIN)
0V

tPZL tPLZ
Switch Ou tpu t
(VNC or VNO ) VOH
S1 at 2 x V + 50 % VOL + 0.3 V
VOL

tPZH tPHZ

VOH
Switch Ou tpu t 50 % VOH ± 0.3 V
(VNC or VNO ) 0V
S1 at G ND

(1) All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.

Figure 17. Turn-On (tON) and Turn-Off (tOFF) Time

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V+
VTR

VNC or VNO
RL
NC or NO
Switch VCOM
Input NC or NO
COM
RL CL

IN
VI

GND
Switch Input a nd Output for Un dershoot Test

5.5 V
Switch Input 90 % 90 %
VNC or VNO 2 ns 2 ns
(Ope n S ocket) 10 % 10 %
-2 V
20 ns

Switch Ou tpu t VOH

(VOUTU) VOH ± 0.3

Switch Input a nd Output for Overshoot Test

20 ns
Switch Input 5.5 V
VNC or VNO
(Ope n S ocket) 90 % 90 %
2 ns 2 ns
10 % 10 %
-2 V
Switch Ou tpu t
VOL + 0.3
(VOUTO)
VOL

Figure 18. Undershoot and Overshoot Test

V+

VNC or VNO Log ic V+

NC or NO Input 50 %
VCOM (VI) 0
COM

NC or NO
CL(2) RL Switch 90 % 90 %
Output
(VCOM)
IN tBBM
VI

Log ic
VNC or VNO = V+/2
Input (1)
GND RL = 50 Ÿ
CL = 35 pF

(1) All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
(2) CL includes probe and jig capacitance.

Figure 19. Break-Before-Make (tBBM) Time

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V+
Networ k Anal yzer

50 VNC NC
COM VCOM Chann el O N: NC to COM
Sou rce VI = V+ or GND
Sign al NO

Networ k Anal yzer Setup

50 Ÿ
VI IN
Sou rce Po we r = 0 dBm
+
(632-mV P-p at 50-Ÿ load)
GND
DC Bia s = 350 mV

Figure 20. Bandwidth (BW)

V+
Networ k Anal yzer

50 Chann el O FF: NC to COM

VNC NC
VI = V+ or GND
COM VCOM
Sou rce 50 NO
Sign al
Networ k Anal yzer Setup
IN
VI Sou rce Po we r = 0 dBm
50 Ÿ
+ (632-mV P-p at 50-Ÿ load)
GND

DC Bia s = 350 mV

Figure 21. OFF Isolation (OISO)

Networ k Anal yzer V+

Chann el O N: NC to COM
50 VNC Chann el O FF: NC to COM
NC
VI = V+ or GND
VCOM
Sou rce
VNO NO
Sign al
Networ k Anal yzer Setup
IN 50 Ÿ
VI
50 Ÿ + Sou rce Po we r = 0 dBm
(632-mV P-p at 50-Ÿ load)
GND
DC Bia s = 350 mV

Figure 22. Crosstalk (XTALK)

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V+
Log ic VIH
RGEN Input
NC or NO OFF ON OFF
(VI) VIL
COM VCOM

VGEN NC or NO
CL(2) ûVCOM
VCOM

VI IN

VGEN = 0 to V +
Log ic
RGEN = 0
Input(1)
GND CL = 0.1 nF
QC = CL × ûVCOM
VI = VIH or VIL

(1) All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
(2) CL includes probe and jig capacitance.

Figure 23. Charge Injection (QC)

V+/2

V+
Aud io A nalyze r
RL
NO
Sou rce
Sign al
NC CL(1)
600
600 Ÿ
VI IN

GND
600 Ÿ

(1) CL includes probe and jig capacitance.

Figure 24. Total Harmonic Distortion (THD)

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8 Detailed Description

8.1 Overview
The TS5A63157 is a single-pole, double-throw (SPDT) analog switch designed to operate from 1.65 V to 5.5 V.
This device can handle both digital and analog signals. Signals up to V+ (peak) can be transmitted in either
direction.

8.2 Functional Block Diagram

TS5A63157

NO
COM
NC

IN

8.3 Feature Description

8.3.1 Integrated Overshoot and Undershoot Protection Circuitry
The TS5A63157 senses overshoot and undershoot events at the I/Os and responds by preventing voltage
differentials from developing and turning the switch on.

8.3.2 Isolation in Powered-Off Mode, V+ = 0 V

The TS5A63157 provides isolation when the supply voltage is removed (V+ = 0 V). When the TMUX1511 is
powered-off, the I/Os of the device remain in a high-Z state. Powered-off protection minimizes system complexity
by removing the need for power supply sequencing on the signal path.

8.3.3 Break-before-make
Break-before-make delay is a safety feature that prevents two inputs from connecting when the device is
switching. The output first breaks from the on-state switch before making the connection with the next on-state
switch. The time delay between the break and the make is known as break-before-make delay.

8.4 Device Functional Modes

Table 2. Function Table

NC TO COM, NO TO COM,
IN
COM TO NC COM TO NO
L ON OFF
H OFF ON

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9 Application and Implementation

NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.

9.1 Application Information

The TS5A63157 can be used in a variety of customer systems. The TS5A63157 can be used anywhere multiple
analog or digital signals must be selected to pass across a single line.

9.2 Typical Application

5V

V+

IN NO
MCU or To/From
System Logic System
COM NC
GND

Figure 25. System Schematic for TS5A63157

9.2.1 Design Requirements

In this particular application, V+ was 1.8 V, although V+ is allowed to be any voltage specified in . A decoupling
capacitor is recommended on the V+ pin. See for more details.

9.2.2 Detailed Design Procedure

In this application, IN is, by default, pulled low to GND. Choose the resistor size based on the current driving
strength of the GPIO, the desired power consumption, and the switching frequency (if applicable). If the GPIO is
open-drain, use pullup resistors instead.

9.2.3 Application Curve

9
8 85°C

7
6
25°C
ron (Ω)

5
4 –40°C
3
2
1
0
0 1 2 3 4 5
VCOM (V)

Figure 26. ron vs VCOM, V+ = 5 V

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10 Power Supply Recommendations

The power supply can be any voltage between the minimum and maximum supply voltage rating located in the .
Each VCC terminal should have a good bypass capacitor to prevent power disturbance. For devices with a single
supply, a 0.1-μF bypass capacitor is recommended. If there are multiple pins labeled VCC, then a 0.01-μF or
0.022-μF capacitor is recommended for each VCC because the VCC pins will be tied together internally. For
devices with dual supply pins operating at different voltages, for example VCC and VDD, a 0.1-µF bypass
capacitor is recommended for each supply pin. It is acceptable to parallel multiple bypass capacitors to reject
different frequencies of noise. 0.1-μF and 1-μF capacitors are commonly used in parallel. The bypass capacitor
should be installed as close to the power terminal as possible for best results.

11 Layout

11.1 Layout Guidelines

Reflections and matching are closely related to loop antenna theory, but different enough to warrant their own
discussion. When a PCB trace turns a corner at a 90° angle, a reflection can occur. This is primarily due to the
change of width of the trace. At the apex of the turn, the trace width is increased to 1.414 times its width. This
upsets the transmission line characteristics, especially the distributed capacitance and self–inductance of the
trace — resulting in the reflection. It is a given that not all PCB traces can be straight, and so they will have to
turn corners. Below figure shows progressively better techniques of rounding corners. Only the last example
maintains constant trace width and minimizes reflections.
Unused switch I/Os, such as NO, NC, and COM, can be left floating or tied to GND. However, the IN pin must be
driven high or low. Due to partial transistor turnon when control inputs are at threshold levels, floating control
inputs can cause increased ICC or unknown switch selection states.

11.2 Layout Example

WORST BETTER BEST
2W

1W min.

W
Figure 27. Trace Example

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12 Device and Documentation Support

12.1 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.

12.2 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.

12.3 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.

13 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

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PACKAGING INFORMATION

Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)

TS5A63157DBVR ACTIVE SOT-23 DBV 6 3000 RoHS & Green NIPDAU | SN Level-1-260C-UNLIM -40 to 85 (JBEF, JBER)

TS5A63157DBVRG4 ACTIVE SOT-23 DBV 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 JBEF

TS5A63157DCKR ACTIVE SC70 DCK 6 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 (J75, J7F, J7R)

(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.

(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.

(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

Addendum-Page 1
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In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2
 PACKAGE MATERIALS INFORMATION

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TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1
Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TS5A63157DBVR SOT-23 DBV 6 3000 180.0 8.4 3.23 3.17 1.37 4.0 8.0 Q3
TS5A63157DBVR SOT-23 DBV 6 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3
TS5A63157DBVRG4 SOT-23 DBV 6 3000 178.0 9.0 3.23 3.17 1.37 4.0 8.0 Q3
TS5A63157DCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3
TS5A63157DCKR SC70 DCK 6 3000 178.0 9.2 2.4 2.4 1.22 4.0 8.0 Q3
TS5A63157DCKR SC70 DCK 6 3000 180.0 8.4 2.41 2.41 1.2 4.0 8.0 Q3

Pack Materials-Page 1
 PACKAGE MATERIALS INFORMATION

www.ti.com 16-Jul-2020

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TS5A63157DBVR SOT-23 DBV 6 3000 202.0 201.0 28.0
TS5A63157DBVR SOT-23 DBV 6 3000 180.0 180.0 18.0
TS5A63157DBVRG4 SOT-23 DBV 6 3000 180.0 180.0 18.0
TS5A63157DCKR SC70 DCK 6 3000 180.0 180.0 18.0
TS5A63157DCKR SC70 DCK 6 3000 180.0 180.0 18.0
TS5A63157DCKR SC70 DCK 6 3000 202.0 201.0 28.0

Pack Materials-Page 2
 PACKAGE OUTLINE
DBV0006A SCALE 4.000
SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR

C
3.0
2.6 0.1 C
1.75
B A 1.45 MAX
1.45
PIN 1
INDEX AREA

1
6

2X 0.95
3.05
2.75
1.9 5
2

4
3
0.50
6X
0.25
0.15
0.2 C A B (1.1) TYP
0.00

0.25
GAGE PLANE 0.22
TYP
0.08

8
TYP 0.6
0 TYP SEATING PLANE
0.3

4214840/B 03/2018

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Body dimensions do not include mold flash or protrusion. Mold flash and protrusion shall not exceed 0.15 per side.
4. Leads 1,2,3 may be wider than leads 4,5,6 for package orientation.
5. Refernce JEDEC MO-178.

www.ti.com
 EXAMPLE BOARD LAYOUT
DBV0006A SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR

PKG
6X (1.1)
1

6X (0.6)
6

SYMM
2 5
2X (0.95)

3 4

(R0.05) TYP (2.6)

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN
SCALE:15X

SOLDER MASK
SOLDER MASK METAL METAL UNDER OPENING
OPENING SOLDER MASK

EXPOSED METAL EXPOSED METAL

0.07 MAX 0.07 MIN

ARROUND ARROUND

NON SOLDER MASK SOLDER MASK

DEFINED DEFINED
(PREFERRED)

SOLDER MASK DETAILS

4214840/B 03/2018

NOTES: (continued)

6. Publication IPC-7351 may have alternate designs.

7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

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 EXAMPLE STENCIL DESIGN
DBV0006A SOT-23 - 1.45 mm max height
SMALL OUTLINE TRANSISTOR

PKG
6X (1.1)
1

6X (0.6)
6

SYMM
2 5
2X(0.95)

3 4

(R0.05) TYP
(2.6)

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL
SCALE:15X

4214840/B 03/2018

NOTES: (continued)

8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.

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