Construction and Application of Heat Sensor 2
Construction and Application of Heat Sensor 2
CHAPTER ONE
1.0 INTRODUCTION
1.1 BACKGROUND OF STUDY
The word “heat” is made manifest as a result of increase in
temperature. Temperature is most often measured environmental quantities
which correspond to primary sensations-hotness and coldness. This is due to
the fact that most biological, chemical, electronic, mechanical and physical
systems are affected by temperature. In many instances, some processes
perform better within a range of temperatures. Also, certain chemical
reactions, biological processes and even electronic circuits do better within
limited temperature ranges. When the needs to optimize these processes
arose, the systems used for controlling the temperature within defined limits
are then needed. The temperature sensors are often used in providing inputs
to those control systems. However, in the case of too much exposure of some
electronic components to high extreme temperature, there will be an advace
effect on them which can lead to he damage of the components. Though,
some of the components can even be affected and get damaged by low
temperature values.
Semiconductor devices as well as LCDs (Liquid Crystal Displays)
can be affected and get damaged by temperature extreme. As the temperature
threshold gets exceeded, an immediate action should be taken so as to
prolong the lifetime of the system. In these, temperature sensing helps to
improve the reliability as well as the lifetime of the system. Most temperature
monitoring devices are designed to respond to a particular (critical)
temperature level. They are usually incorporated with different kinds of
alarms and light indicator units, which are triggered ON at an unacceptable
temperature level. These temperature monitoring devices work with
temperature sensors normally transducers which generate accurate voltage
output that varies linearly with temperature. They are mainly used for
monitoring industrial machines, electric boilers, ovens and other heat energy
related activities and this can be done by ensuring the temperature sensor and
its leads are at the same temperature as the object to be measured. This
usually involves making a good mechanical and thermal contact.
If the temperature sensor is to be used to measure temperature in
liquid, the sensor can be mounted inside a sealed end metal tube and can then
be dipped into a bath or screwed into a threaded hole in a tank. Temperature
sensors provide inputs to those control systems. When temperature limits are
exceeded, action must be taken to protect the system. In these systems,
temperature sensing helps enhance reliability. In modern electronics, more
temperature measuring techniques are available. Several temperature sensing
techniques are in widespread usage. The most common of these:
Thermocouples, Thermistors and Sensor IC's. These temperature sensors
("transducers"), illustrate a nice variety of performance tradeoffs.
Temperature range, accuracy, repeatability, conformity to a universal curve,
2
size and price are all involved. The temperature sensor being used in this
system is the LM 335 and it has the following features; (1) Directly calibrated
in Kelvin, (2) 1°C initial accuracy available, (3) operates from 400u.A to
5mA, (4) less than the 1H dynamic impedance, (5) easily calibrated and (6)
low cost. This makes it preferable to the thermistor which was used in
previous related research. Although, the thermistor has a wider temperature
range than the LM 335, it suffers from self-heating effects, - usually at higher
temperatures where their resistances are lower -and fragile, which makes it
inappropriate for the research. Apart from the merits of the temperature
sensor, the dual nature of the system extends its application which is not so in
previous systems designed for heat monitoring.
The Complementary Metallic Oxide Semiconductor (CMOS), which
provides reasonable performance, is extensively used in the construction of
this system. In previous research relating to temperature monitoring,
transistor-transistor logic (TTL) integrated circuits were used. The TTL
devices are attributed to high power consumption, limited logic functions,
narrow power supply, low compatibility and high overall cost while CMOS
on the other hand, provides low power consumption, good immunity to
external noise, insensitivity to power supply variations, temperature range
capabilities -48°C to 52CC [1]. In general, the most important characteristics
of CMOS make it the logic of choice. A typical temperature monitoring
device possesses both a temperature sensor and control unit that responds to
the input. It is against this background that the study wishes to examine the
construction and application of heat sensor.
Thermocouples
Thermocouples are sensors composed of two different metals at their sensing
end. A voltage is created when there is a temperature gradient between the hot
sensor element and the cold reference junction. The change in voltage can be
5
reported as a tempera- ture through the Seebeck effect (Love 2007). The
Seebeck effect says that the change in voltage is linearly proportional to the
change in temperature and the two variables are related to each other through
a coefficient that is determined by the materials used in the thermocouple
(Janata 2009). Figure 2.1 depicts the construction of a thermocouple.
Resistance Thermometers
Resistance thermometers are also known as resistance temperature
detectors, or RTDs. They are typically made of a single pure metal (Dames
2008). Each metal has a material property of electrical resistance that is a
function of temperature. The most accurate resistance thermometers are
ones that use metals that have a very linear relationship with temperature,
such as platinum. By using the relation- ship curves between electrical
resistance and temperature, when the resistance of the metal is measured, a
temperature can be calculated (Dames 2008). Figure 2.2 depicts the
construction of one type of resistance thermometer.
Thermistors
A thermistor is a specific type of resistance thermometer. Thermistors are
made of metal wires connected to a ceramic base made of several sintered,
oxide semi- conductors (Janata 2009). Like other resistance thermometers,
the change in
Silicon Sensors
These sensors are made of silicon, a semiconductor that is used as the base
mate- rial for most electronic microprocessors. The process of
manufacturing these elec- tronic devices is a carefully controlled, high-
volume manufacturing process that includes deposition, doping, and
careful layering of metals, oxides, and insulators (Peterson 1983). By
utilizing this manufacturing process, integrated circuit (IC) sensors can be
created as their own sensor device (Desmarais and Breuer 2001). They can
also be embedded inside microprocessors as diodes (Rotem et al. 2006).
These types of sensors can have their own memory, can have direct output
to meters and can convert signals to temperature readings without extra
equipment (Desmarais and Breuer 2001).
Radiation Thermometers
All substances and objects emit heat radiation when it is at a temperature
higher than absolute zero (0 K− or 273.15 °C). There is a relationship
between temperature and radiation energy emitted that can be used to
calculate the temper- ature of the object surface. Unlike other sensors
discussed above, radiation ther- mometers are primarily used at a distance
from the object of interest and can be used for hard-to-reach objects. An
example of a radiation thermometer is an infra- red camera, which
measures infrared wavelengths that emit from an object.
Conduction
Conduction is the first mode of heat transfer that we will discuss. It is a
prominent mode of heat transfer in electronics cooling. Undergraduate
transfer textbooks typ- ically devote a large portion of the text to this topic
and those books will be able to give a more comprehensive and in-depth
discussion on this mode of heat transfer.
Solution
In this example, the mode of heat transfer is conduction through the block.
The given information is annotated in the illustration below to help us solve
this problem.
9
We will start with Eq. 2.1 and replace with the given variables. We want to
solve for conductivity k in units of W m−1 K−1.
Qconduction kA(Thot − Tcold )
=
L
In order to solve the equation with the correct units, the area and length
units must be changed to meters, m. The known values are plugged into
the conduction equation to give:
(50 W)(0.01
m)
k= 2
. Σ
0.0004 m (90
W
k = 50
mK
By re-ordering Eq. 2.1, we solve for k and find it to be 50 W m−1 K−1.
Convection
Convection is the second mode of heat transfer we will discuss. Along
with con- duction, it is typically a large part of electronics cooling in
active, fan-cooled sys- tems. An undergraduate textbook can be consulted
for in-depth information.
Fig. 2.5 Convection and its airflow and temperature boundary layers
Fig. 2.6 Air heating: ideal versus real air temperature versus fin temperature
Surface Area and Fins: To increase surface area and the effectiveness of
convection heat transfer, fins are often added to the base of electronic
cooling solutions. The fins are often made of a heatly conductive material
such as alu- minum or copper. Fins can be formed by extrusion from a
large block or they can be formed and stacked on top of the base with
solder.
Air Heating and Pressure Drop: Another consideration is the air heating
along the length of the fin. In an idealized condition, the temperature
difference between the air and the fin along the length of the fin would be
constant. However, in reality, the temperature of the air increases along the
length of the fin and the fin’s ability to remove heat is diminished as the
1
length of the fin is increased. It is not effective to simply make the fins
infinitely long. Figure 2.6 shows the ideal versus real case for air heating.
Additionally, longer fins will have a higher pres- sure drop across the fins
compared to a heat sink with shorter fins. For heat sinks with longer fins,
the total airflow will be reduced and thus cooling will be reduced for a
given fan curve.
Optimizing Fin Performance: The fin stacks themselves have a fin resist-
ance, which is a function of convection coefficient, fin efficiency and fin
surface area. The balance among all three will determine the optimal fin
geometry for a given set of boundary conditions, including cost
considerations and manufacturing abilities.
Radiation
The last mode of heat transfer to discuss is radiation. Typically, this mode
of heat transfer can be more complex than either conduction or convection.
Graduate level classes cover this mode in more detail. In cooling
microprocessors, radiation can play a large part when the primary mode of
cooling is natural convection, with no active fan.
hr = εσ (Tsource − 2 (2.6)
sourc + surround
Tsurrounding )(T 2 e T
ing)
where ε is the emissivity of the source and σ (5.67 10−8 W m−2 K−4) is
×
the Stefan-Boltzmann constant (Bergman et al. 2011). The radiation heat
transfer coefficient is similar to the convection heat transfer coefficient,
but the radiation heat transfer coefficient is much more dependent on
temperature as shown by rais- ing the temperature terms in Eq. 2.6 to the
third power (Bergman et al. 2011). The net radiation heat transfer is well
known by Eq. 2.7, where hr in Eq. 2.5 is replaced by Eq. 2.6:
Qradiation = εσ 4 (2.7)
sourc − surround
A(T 4 e T
ing)
Figure 2.7 depicts the heat transfer of an object through radiation. The
variables in Eq. 2.7 are highlighted in the figure.
question and the temperature and finish of the surfaces. A solid surface can
emit, absorb, reflect, and transmit radiation depending on the material in
question. For example, an opaque material can reflect radiation, whereas in
a semitransparent material, radiation can be transmitted through the
material. Unlike absorption and emission, reflection and transmission do
not affect the total heat energy of the material (Bergman et al. 2011).
Figure 2.8 depicts the various components of heat transfer of an opaque
solid through radiation.
2.3 Heat Transfer in a Microprocessor
As discussed in the previous section, the three modes of heat transfer can
play important roles in the cooling and temperature sensing of
microprocessors. Typically, in active, forced air-cooled systems,
conduction and convection play the largest role. In natural convection
systems or in systems where there is no room to attach a fan, radiation can
play an important role.
Active Cooling
In active cooling systems, fans are attached in the system; they provide
airflow over the microprocessors and can be used to help cool them. In
these cases, the heat engineer can conduct heat from the package out to a
heat sink made of a heatly conductive material such as copper or
aluminum. In cases where more cooling is needed, fins can be added to the
cooling solution. Though actively cooled, it is also important to consider
the conductive path from the package to the motherboard or any other
substrate the microprocessor is attached to. Figure 2.9 depicts a few
examples of heat sinks that can be used to cool microprocessors.
Package Heats
Heat is spreading through conduction within the die and out of the package
via active or natural convection cooling. The package is composed of the
die, which is attached to a substrate made of FR-4 material with embedded
copper layers. The package designer may decide not to cover the die; this
is typically called a bare- die package. Alternatively, a package can include
over-molding made of an epoxy or plastic to protect the die. It can also be
covered with a copper integrated heat spreader (IHS) to help reduce
spreading resistance and increase conduction to the heat sink. If the die is
covered with a spreader, another material is needed between the die and
spreader to fill in small air voids and gaps with conductive mate- rial.
This interface material is typically called the heat interface material. In
Fig. 2.10, three package options (bare die, over-molded, integrated heat
spreader) are shown.
Example 2.3 A heat sink is placed over a package with an integrated heat
spreader. The package itself is attached to a substrate. The heat sink has
metal fins and a metal base. Draw the resistance stack that should be
accounted for in order to accurately find the die temperature (junction).
Make sure to take into account any interfaces that would be present in a
real assembly.
Fig. 2.10 Various package configurations with and without lid protection
Solution
To understand the different interfaces that should be accounted for, a
schematic would be the first place to start. The problem statement gives
the description for what the heat solution looks like. The illustration below
depicts the description given in this example of a heat sink with fins placed
on top of a package with an integrated heat spreader.
The heat sink can be a radial heat sink or one of another shape, but for
sim- plicity, we chose a simple rectangular base with straight fins. In this
problem, it does not matter how tall or long the fins are. The base area and
thickness are also not important. In this problem, the package is a ball-grid
array (BGA) package, attached to the motherboard using solder balls.
Alternatively, the package can be attached to the motherboard using a
land-grid array (LGA) socket.
There are two places where heat interface material would be placed in
this configuration: within the package between the die and integrated heat
spreader (Heat Interface Material 1) and between the integrated heat
spreader and the heat sink base (Heat Interface Material 2). Not only can
power go up from the die into the heat sink, power may also go down
through the substrate. It is also important to know that if power is
dissipated into the substrate, the power will eventually be cooled by T air.
The resistance stack can be created by choosing temperature points
along the path through which heat will be dissipated, as shown in the next
schematic. The die temperature is also referred to as the junction
temperature in many specification sheets and is shown as the junction
temperature in this example. It is important to note that the package
resistance is in reality made of many parts: spreader resistance, heat
interface material 1 resistance, and so forth. However, many specification
sheets simply give an overall resistance target from junction to case, which
should be defined in the specification sheet, rather than describe all the
details.
For this example, the resistance network is shown in the following
illustration. This network reflects the simplification within the package by
combining the spreader and heat interface material 1 resistances into one
resistance and reflects that the power through the package will be cooled
by air.
Microprocessor Performance
There are many inputs into determining microprocessor performance,
including voltage, leakage power, and heat design power (TDP). The
inputs are dependent on temperature and subsequently, the performance of
the part, its frequency, is also dependent on temperature. Higher TDP,
higher voltage, and lower leakage power increases frequency. This is the
ideal case when performance is the most important variable in the design.
However, if both temperature increases and reliability metrics are fixed, the
voltage decreases and leakage power increases, leaving less power devoted
to TDP. This is the opposite trend of what is needed for optimal
performance. It is vital to measure the temperature of the microprocessor
accurately to properly set frequency.
Microprocessor Reliability
The silicon microprocessor has an upper temperature limit specification
that is set to prevent immediate microprocessor damage. In addition,
microprocessors have an allowable failure rate and are specified to work
for a certain period of time, usu- ally in the number of years. If reliability
is relaxed and the part can tolerate more failures or a shorter lifetime,
voltage may not need to decrease when temperature increases, which
allows for better performance. To ensure that there is minimal immediate
damage and that the part failure rate is acceptable in its lifetime, the
microprocessor temperature must be accurately understood.
CHAPTER THREE
with temperature over a large range of temperature (Dames 2008) and has a
higher resistivity compared to other metals such as copper and nickel, which
make it ideal for RTDs (The RTD 2014). The temperature coefficient of
resistance (TCR) is 0.0039 K−1 at room temperature, where the TCR is the
change in resistance per unit change in temperature. A higher TCR
represents a more sensitive RTD to tem- perature and a high TCR is ideal.
As a material, it is chemically inert and stable in different kinds of
environments and is not likely to corrode or reduce, making it useful to
measure temperature in many different environments (Dames 2008). Table
2.1 shows a few common heat and electrical properties for platinum.
Thermocouple Materials
Many metals and alloys other than platinum are used in sensors, especially
thermocou- ples. Though RTDs are mostly made of platinum, copper and
nickel RTDs can also be found. In thermocouples, alloys are common materials
(ANSI and IEC Color Codes 2014). Because of the wide range of materials,
the temperature range of thermocouples is much −wider than RTDs:
temperatures can range as low as 270 °C and as high as 2300 °C. Common
non-alloy thermocouple metals are summarized in Table 2.2.
In Table 2.3, a few common thermocouple alloys are summarized. The
alloys in the table are made of copper, nickel, and chromium and they are
found in J, K, T, and E thermocouple types.
Care must be taken in choosing thermo-electric materials for the
environment they are used in: for example, thermocouples containing iron
can be more suscep- tible to oxidization at high temperatures and is
recommended for lower temper- atures (ANSI and IEC Color Codes
2014). Chromium-based thermocouples can also see oxidation or “green
rot” at higher temperatures when exposed to low lev- els of oxygen
(Nicholas and White 2001). Table 2.4 summarizes the recommended and
limiting conditions of a handful of thermocouple types.
Table 2.2 Physical and heat properties of copper, nickel and iron
Physical property Cu Ni Fe
aHeat conductivity (W m−1 K−1) at 401 90.9 80.4
25 °C
bMelting point (K) 1357.6 1728 1811
Temperature coefficient of c3.9 × d5.9 × c5.0 ×
resistance (Ω/Ω °C)
10−3 10−3 10−3
eElectrical resistivity Ω cm at 0 °C 1.545 × 6.23 × 8.7 ×
10 −6 10 −6 10−6
bCoefficient of linear heat 16.5 × 13.4 × 11.8 ×
expansion (K−1) 10−6 10−6 10−6
fSpecific heat capacity (J g−1 K−1) 0.385 0.444 0.449
bDensity (g cm−3) 8.933 8.90 7.87
Silicon Sensors
Silicon is a semiconductor, which at a very basic level is a material that has
an elec- trical resistance between an insulator and conductor (Yacobi
2002). Silicon has a diamond lattice structure and its neutral valence
electron configuration allows silicon to equally share its valence electrons
with other elements (Yacobi 2002). Because of this, silicon can be doped
with other elements near it on a periodic table, such as boron or
phosphorous, to fill its lattice structure with electrons that carry electrical
current, thereby increasing the electric properties of silicon by orders of
magnitude (Berger 2013). Heatly, silicon’s heat conductivity increases as
temperature increases, the opposite of what occurs with most metals
(Yacobi 2002). Most importantly, electronics are often made of silicon for
several key reasons:
• Silica can be purified and turned in single-crystal silicon in a very pure
form by vapor deposition (Habashi 2013).
• It is an inexpensive material (Peterson 1983).
• Its melting point is sufficiently high enough for silicon to be stable
during high volume manufacturing, specifically for high temperature
oxidation, diffusion, and annealing (Yacobi 2002).
• Silicon electronics can be manufactured in batches very precisely (Peterson
1983).
However, one important disadvantage of silicon sensors is the narrow
range of temperature use compared to thermocouples and resistance
thermometers: silicon sensors are generally only good from 50 to 150 °C
−
(Bakker 2002). Table 2.5 is a summary of some of the electrical and heat
properties of silicon.
Objective of Measurement
There can be several reasons why temperature is being measured for a
given process, test, or object. The temperature may have a big effect on the
chemical process that is being monitored. For example, in silicon high
volume manufacturing, the tempera- ture has to be set precisely to control
layer growth and depth. In other cases, the temperature can be the main
output of the test. An example of this case is during the performance test of
a heat heat sink. Temperature can also be measured to ensure reliability
over time. Silicon dies usually have temperature monitors to ensure they
remain under the maximum temperature limit and reliably work over a set
number of years. Whatever the situation, care must be taken to pick a
sensor that can get the job done accurately within the required conditions
without being too costly.
Cost
Cost can be an important factor in choosing a sensor. Platinum is an
expensive material and because of the resistance of the material, it
typically will result in a long sensor element (The RTD 2014). Copper,
nickel, and lead are very low cost materials that can make them more
appealing despite their material limita- tions, such as a narrower use-
temperature range. Because silicon sensors can be produced in batches,
their cost can also be quite low compared to resistance ther- mometers, but
their temperature range is much narrower in comparison. In addi- tion, the
cost of the sensor can increase as the accuracy required increases. To
approximately estimate the cost of a thermometer, including the costs of
the mate- rial, manufacturing, calibration and metrology equipment
needed, the following calculation can be used (Nicholas and White 2001):
USD 100oC
Cost =
Accuracy Required
Accuracy
Accuracy is the ability of the thermometer to exactly hit a specified
temperature. This can be considered a± qualitative description. In contrast,
uncertainty is the
± range of expected error between the actual and ideal
temperatures (Kenny 2004). Thermometer A can have an uncertainty of 0.55
°C and thermometer B can have an uncertainty of 1.3 °C quantitatively, while
thermometer A can be described qualitatively as being more accurate than
thermometer B.
Response Time
In addition to cost, accuracy, and useful temperature range, the rate for the
meas- ured object or substance to change temperature should also be taken
in account. For example, if the rate of temperature change for the
substance in question is very fast, then the thermometer choice should also
have a quick response. If the ther- mometer response is too slow, then it
may inaccurately report the temperature at a given time and may allow the
temperature to exceed a specified limit. To get an accurate temperature
reading, the thermometer should be in equilibrium with the system being
measured. After heat is added, it will have to move by conduction or
convection from the source closer to the thermometer and then be
conducted into the thermometer—process steps that will all take time.
Equation 2.11 shows the time it will take the thermometer to respond with
system temperature change as a time constant, when the mode of heat
transfer is conduc- tion (Nicholas and White 2001):
τ = C/-∑KA (2.11)
L
where C is the heat capacity of the fluid or object in J K −1 and the
denominator is the inverse of the conduction resistance in Eq. 2.2. The time
constant can also be written in terms of convection rather than conduction by
using the inverse of the convection resistance in Eq. 2.4. Equation 2.12 would
result (Tomsen 1998):
τ = C/(hcA) (2.12)
The heat capacity is a material property that describes the amount of heat
required to change the temperature of the object by one degree. It is found
in units of J K−1, which shows the relationship between heat, power
and temperature. A larger heat capacity means that it will take more heat to
change the temperature of a substance. Thus, generally, the higher the heat
capacity of the object, the longer it will take for the temperature to change.
Error between the thermometer and sys- tem will decrease exponentially
with the time constant (Nicholas and White 2001).
Calibration
The sensor’s accuracy can be increased from the production or supplier
specifi- cations through calibration before test. Calibration can be done in
the laboratory before test, or it can be completed by the manufacturer,
usually at a cost. There are two basic ways that sensors can be calibrated,
using fixed points or through bath calibration.
Direct Measurement
In direct measurement, the sensor has direct contact with the object or
substance that is being measured. Some examples of direct measurement
include:
• Attaching a thermocouple to the center of an integrated heat spreader of
a microprocessor to measure the case temperature of the package.
• Using a sheathed, platinum resistance thermometer to measure the bath
temper-
ature of water.
• Incorporating an on-die silicon diode onto a microprocessor to measure
the tem- perature of the active area of the silicon.
• Placing thermocouples upstream and downstream of test setup, in the flow
stream
of the test, in order to measure the inlet and outlet air temperature of the
test.
Direct measurement is often the most accurate way to take a temperature
of an object. Even in direct measurement, making sure the correct location
and correct number of sensors used is still important. For example, if the
bath of water is tak- ing up the volume of an Olympic-size pool, using one
resistance thermometer may not capture temperature variation of different
points in the pool of water.
Indirect Measurement
In indirect measurement, contact is not made with the object or substance
of meas- urement. Radiation thermometers make almost exclusively
indirect measurements with no contact with the object. However,
thermocouple and resistance thermom- eters can also be making an indirect
measurement if they are not placed exactly at the location of interest. Some
examples of indirection measurement include:
• Using a radiation thermometer to measure the temperature of an object
at a far distance.
• Placing an on-die diode that is on the die but not directly at the hot spot
of the
processor during workloads.
• Using an infrared camera to measure the temperature contours of a
powered-on processor.
Temperature Scales
Temperature scales that are linked to heat sensitivity were not always in
exist- ence and it has taken many years to standardize the scales (Biró
2011). The first thermometers, where scales were included next to a
measuring tube, are associated with several people, including Galileo and
Ferdinand II of Tuscany (Biró 2011). For most scientists and engineers
today, the most well-known scales are the Celsius, Fahrenheit, and Kelvin
scale. In this section, we discuss these relevant scales. We also briefly
discuss the more recent International Temperature Scale of 1990.
Fahrenheit
The Fahrenheit scale was named after Daniel Fahrenheit, who created this
scale in 1724 (Biró 2011). This scale, like other scales of the time, is
based on using fixed points to determine extremes of the scales and
divided by an easy to remem- ber number of steps (Nicholas and White
2001). Fahrenheit’s scale is sometimes called the 96-based system,
because he divided his scale by 96 parts. At the high extreme, he used the
human body temperature of 96 °F as one of his fixed points and at the low
extreme, he used the melting point of salty ice to be 0 °F (Biró 2011). This
scale is often related to the Celsius scale, by the Eq. 2.13 below:
◦F = 32 + Σ Σ ◦C
5
This equation is not always convenient. But most remember the relation by
know-
ing that 32 °F is associated with the freezing point of water at 0 °C and that
212 °F is associated with the boiling point of water at 100 °C.
Celsius
The Celsius scale is also a well-known and widely used temperature scale.
It is named after Anders Celsius, who created the scale in 1742 (Biró
2011). Like the Fahrenheit scale, it is based on using fixed points at the
ends of the scale but instead of dividing by 96 parts, Celsius divided by
100 parts. For fixed points, he used the boiling temperature of water at the
high end of the scale and the freezing temperature of water at the other end
of his scale. Equation 2.11 can be rewritten to obtain degrees Celsius from
degrees Fahrenheit by Eq. 2.14:
◦C = Σ Σ × .◦F − 32Σ
9
Kelvin
The Kelvin scale was created to describe the absolute zero temperature
point. Absolute zero is described as the point where there is no
thermodynamic motion and where the heat energy is zero (Biró 2011).
Through experiments, absolute
− zero was determined to be 273.15 °C.
Like the Celsius and Fahrenheit scales, the Kelvin scale is fixed at two
points: 0 K is set to absolute zero and 273.15 K is
set to the triple point of water. Because of how absolute zero and 0 K are
defined, degrees Celsius and kelvin are often related by Eq. 2.15:
K = ◦C + 273.15 (2.15)
Unlike degrees Celsius and degrees Fahrenheit, kelvin is not reported as
degrees Kelvin. Instead, it is just report as K, a unit of temperature
(Nicholas and White 2001).
ITS Scale
As mentioned earlier under calibration with fixed points, the International
Temperature Scale of 1990 (ITS-90) is an adopted standard temperature
scale that defines temperature in relation to fixed points. On the ITS-90
scale, the fixed− points are from 270 to 1084 °C in the original scale
(Preston-Thomas 1990). An addition with quality secondary points was
added for temperatures up to 3414 °C (Bedford et al. 1996). The fixed
points, which occur consistently at the same tem- perature and are highly
reproducible, are chosen from thermodynamic points— boiling point,
melting point, or triple point, to name a few—of substances such as water,
−
hydrogen, copper, and more. On the original − the lowest fixed point
scale,
was the vapor pressure point of helium at 270.15 to 268.15 °C and the
−
highest point was the melting point of copper at 1084.62 °C. With the
secondary reference points, the lowest fixed point is now zinc at 272.3 °C
and the highest point is the melting point of tungsten at 3414 °C. The ITS
scale is often used to provide a ref- erence calibration point.
Sensing Noise
Sensors are manufactured with specified accuracy ranges, which can
further be calibrated by the manufacturer or user to gain even more
accuracy. Despite the knowledge and experience on obtaining accurate
sensors, readings can still have inaccuracies due to noise. Noise can be
caused by process, metrology, or it can be intrinsic to the sensor. This
section briefly discusses those three sources of noise.
Process Noise
Many manufacturing processes are now very controlled and products from
the manufacturing line are consistent and are mass copies of one another.
Despite this control, it is impossible to hit the same values, such as
thickness or diameter, every single time for every single product off the
line. Manufacturing processes can have some standard deviation from the
mean or set point, which the end user can see as ranges of accuracy in
sensors or as sensors that are not made to an exact specified length or
diameter. A good example of process noise occurs in silicon
manufacturing. This vari- ation will be present in diodes that are embedded
in the microprocessor or in stand-alone silicon sensors. To make silicon
sensors and microprocessors, the manufacturing process involves growing
and laying down several layers of silicon, oxides, and metals, each with its
own thickness set point. If the layer is supposed to be 10 microns thick, it
likely can vary between 10, 10.1, or 9.9 μ, depending on the tolerances
allowed.
Sensors can be rated to be accurate to± 5 °C, but a specific sensor could
be accurate to 1 °C or perhaps 4 °C. When sensors are delivered from the
manufac- turing plant, process noise will be present. Calibration or tests
versus temperature references (that is, a well-stirred water bath) can be
used to understand how pro- cess noise may affect the performance of the
sensors and to reduce any errors.
Metrology Noise
In addition to process noise, metrology noise is introduced through
calibration and measurement equipment, such as chambers, power supplies
and data acquisition machines, to name a few sources.
CHAPTER FOUR
Other Heat Effects: The long-term exposure to heat has the effect of
elas- tically deforming the wires or leads of the sensor. With deformation,
the metal can stretch and contract through several cycles, introducing
errors as a result of differ- ent rates of expansion and contraction and the
subsequent change in the resistance of the wire (Nicholas and White 2001).
In addition, other causes of heat gra- dients than the two previously
discussed (self-heating and thermoelectric effects) will produce noise. For
example, heat effects that lead to larger heat gra- dients can be introduced
from inadequate connection between sensing wires and leads or extension
wires (Nicholas and White 2001).
Sensor Intrinsic Noise: Lead Wire Resistance
For thermocouples, if the correct instrumentation is used with little current
through the circuit, there should be negligible resistance in the wires
(Nicholas and White 2001). Lead wire resistances have a larger effect on
resistance ther- mometers, because current needs to flow through the
sensors for RTDS to work. Resistance thermometers have several wire
configurations with different numbers of wires: two-wire, three-wire, or
four-wire. The circuit they are based on is com- monly called the
Wheatstone bridge (Love 2007). One of the resistors in the cir- cuit is the
resistance thermometer of interest. The other resistors are defined to
complete the circuit in equilibrium at a reference temperature (Love 2007).
The bridge works well if the leads to the resistance thermometer are
negligible and there is no measurable resistance in those leads. Error is
introduced when the leads to the thermometer are very long, so that the
lead resistances are not equal or small (Love 2007). Figure 2.12 depicts
where the extra resistors would be intro- duced in series with the resistance
thermometer. The extra resistances would cause inaccurate readings for the
resistance thermometer.
Sensor Reliability
Heat sensors will be exposed to temperature cycling and high temperatures
throughout their use. Inevitably, this will cause degradation in sensor
accuracy and complete breakdown of the sensor as it reaches the end of its
life. In addi- tion, there are other sources that can cause complete sensor
error or breakage well before the end of its expected lifetime. There are
techniques and sensor configura- tions that can prevent catastrophic failure
and extend its life, but sensors are not meant to last forever. This section
discusses a few sources that contribute to unreli- able accuracy and causes
of sensor failure.
Hysteresis
Hysteresis is a condition where, in addition to the current sensor
environment, the previous sensor environment also affects the current
sensor readings (Kenny 2004). Hysteresis becomes apparent for
temperature sensors during temperature cycling (Nicholas and White
2001). The metal wires used in sensors will stretch and contract as the
temperature cycles between temperatures. The different rates of expansion
and contraction will affect the next sensor reading and result in errone- ous
readings. As an example, let us take a sensor that is used to measure a fluid
at a high temperature of 400 °C and is then used to measure fluid
temperature as its temperature decreases. The sensor at 375 °C will likely
not have had enough time to fully contract and will still see expansion
effects from being exposed to 400 °C. The reading at 375 °C will
subsequently have errors. As the number of cycles increase, the error also
increases. Hysteresis effects can be reduced by allowing the sensor to
contract back and reach equilibrium at a specific measurement point
(Nicholas and White 2001). However, after many heat expansions and
contrac- tions, the sensor will reach a point where deformation will no
longer be elastic and the sensor will deform permanently. At that point, the
sensor will be irreversibly damaged and its resistance will be permanently
changed.
Chemical Environment
Because many heat sensors and sensor peripherals are made of metals or
alloys, the chemical environment to which the sensors are exposed
becomes a very important factor for long-term reliability. Several different
of types of thermocou- ples were described in an earlier section of this
chapter, including ones made of iron, nickel, platinum, nickel-iron, copper-
nickel, and other alloys. Each metal has a different reaction to moisture,
vacuums, oxidizing, and reducing environments. For example, iron-based
thermocouples may not be suitable at high-temperature, oxidizing
environments because iron is easily oxidized (ANSI and IEC Color Codes
2014). In addition to the wires themselves, thermocouple wire insulators
are subject to their own behaviors in different chemical environments. For
exam- ple, many materials used as insulators for thermocouples break
down in reducing environments, leaving the bare wires exposed to high
temperatures (Nicholas and White 2001). Chemical environment effects
lead to electrical resistive changes and to changes to the Seebeck
coefficient of the metal materials (Nicholas and White 2001). This results
in lower accuracies and can ultimately break the sensor. To avoid negative
environment effects, heat sensor type must be carefully chosen.
Smart Sensors
At the basic level, wireless sensors and sensors for wearables can be
consid- ered smart sensors. Traditional sensors are hard-wired,
specialized to one task, localized, and require support equipment to
transform the electrical input to the intended output like temperature
(Mekid et al. 2010). Smart sensors can have the ability to collect various
types of sensor data in one unit or die, like temperature, pressure, and
humidity (Roozeboom et al. 2013). Smart sensors can also integrate
various other functions to one sensor unit, including the ability to
transform the input to a consumable output within the wireless unit,
compensate for expected errors, and communicate and transmit data
(Mekid et al. 2010). For temperature sensors, they can be made “smart” by
integrating the analog-to-digital converter (ADC) with the temperature
sensor (Bakker 2002). Temperature sensors are also likely to be silicon-
based, like doped-Si resistance thermometers or bipolar tran- sistor-based
heat sensors (Roozeboom et al. 2013).
Wireless Sensors
The temperature sensor can be one node in a network of many temperature
sens- ing or other sensing nodes (Mukhopadhyay 2013). For wireless
sensors, commu- nication is typically transmitted through radio frequency
signals. Currently, three of the more popular signals to use are Wi-Fi†,
Bluetooth†, and Zigbee† (Mekid et al. 2010). The radio frequency should
be chosen for the application so that there is minimal interference from
other radio sources, like microwaves or television, and so that the wireless
sensor can operate no matter the location (Mukhopadhyay 2013).
Additionally, the cost and power-bandwidth of each type of signal should be
considered. For example, Wi-Fi has large range and more data bandwidth
capability, but it also consumes large amounts of power compared to using
Zigbee signals (Mekid et al. 2010). There is an increasing interest in sensors
to wire- lessly monitor for applications such as environmental efficiency,
transportation, in smart homes and in health care (Mukhopadhyay 2013). It
is easy to envision the latter two areas as examples where temperature
sensors can easily be applicable. Temperature sensors may be used to
coordinate room temperatures within the home for increased energy
efficiency or comfort. Temperature sensors can also be useful for health-
care monitoring to measure body and skin temperature.
Anliker, U., Ward, J. a, Lukowicz, P., Tröster, G., Dolveck, F., Baer, M.,
Keita, F., Schenker, E.B., Catarsi, F., Coluccini, L., Belardinelli, A.,
Shklarski, D., Alon, M., Hirt, E., Schmid, R., Vuskovic, M.: AMON: A
Wearable Multiparameter Medical Monitoring and Alert System. IEEE
Trans. Inf. Technol. Biomed. 8(4), 415–27 (2004).
Bakker, A. (2002): CMOS smart temperature sensors—An Overview.
Proceedings of IEEE Sensors 2002. pp. 1423–1427. IEEE (2002).
Bedford, R.E., Bonnier, G., Maas, H., Pavese, F.: Recommended values of
temperature on the International Temperature Scale of 1990 for a selected
set of secondary reference points. Metrologia. 33, 133–154 (1996).
Berger, L.I.: Properties of Semiconductors. In: Haynes, W.M. (ed.) CRC
Handbook of Chemistry and Physics, 94th Edition. pp. 12–80 – 12–93.
CRC Press (2013).
Bergman, T.L., Lavin, A.S., Incropera, F.P., Dewitt, D.P.: Fundamentals of
Heat and Mass Transfer, Seventh Edition. John Wiley & Sons (2011).
Biró, T.S.: How to Measure Temperature. In: Biró, T.S. (ed.) Is There a
Temperature? Conceptual Challenges at High Energy, Acceleration and
Complexity. Fundamentals Theories of Physics, vol 171,. pp. 5–27.
Springer New York, New York, NY (2011).
Dames, C.: Resistance Temperature Detectors. In: Li, D. (ed.)
Encyclopedia of Microfluidics and Nanofludics. pp. 1782–1790.
Springer US (2008).
Desmarais, R., Breuer, J.: How to Select and Use the Right Temperature
Sensor. Sensors Online,
http://archives.sensorsmag.com/articles/0101/24/index.htm, (2001).
Fujinami, K., Xue, Y., Murata, S., Hosokawa, S.: A Human-Probe System
That Considers On-body Position of a Mobile Phone. In: Streitz, N. and
Stephanidis, C. (eds.) Distributed, Ambient, and Pervasive Interactions
- First International Conference, DAPI /HCII 2013. Lecture Notes in
Computer Science, vol. 8028. pp. 99–108. Springer Berlin Heidelberg
(2013).
Habashi, F.: Silicon, Physical and Chemical Properties. In: Kretsinger,
R.H., Uversky, V.N., and Permyakov, E.. (eds.) Encyclopedia of
Metalloproteins. pp. 1998–2000. Springer New York (2013).
Hall, L.A.: Survey of Electrical Resistivity Measurements on 16 Pure
Metals in the Temperature Range 0 to 273K. NBS Tech. Note 365.
February, 1–111 (1968).
Ho, C.Y., Powell, R.W., Liley, P.E.: Heat Conductivity of the Elements. J.
Phys. Chem. Ref.
Data. 1(2), 279–421 (1972).
Janata, J.: Heat Sensors. Principles of Chemical Sensors. pp. 51–62.
Springer US (2009). Johnstone, J. a, Ford, P. a, Hughes, G., Watson, T.,
Garrett, A.T.: Bioharness(TM) Multivariable
Monitoring Device. Part. I: Validity. J. Sports Sci. Med. 11(3), 400–8
(2012).
Kenny, T.: Sensor Fundamentals. In: Wilson, J.S. (ed.) Sensor Technology
Handbook. pp. 1–20.
Elsevier Science & Technology (2004).
Lane, N.D., Miluzzo, E., Lu, H., Peebles, D., Choudhury, T.: A Survey of
Mobile Phone Sensing.
IEEE Commun. Mag. 48(9), 140–150 (2010).
Love, J.: Temperature Measurement. In: Love, J. (ed.) Process Automation
Handbook - A Guide to Theory and Practice. pp. 99–106. Springer US
(2007).
Mekid, S., Starr, A., Pietruszkiewicz, R.: Intelligent Wireless Sensors. In:
Holmberg, K., Adgar, A., Arnaiz, A., Jantunen, E., Mascolo, J., and
Mekid, S. (eds.) E-maintenance. pp. 83–123. Springer London (2010).
Mukhopadhyay, S.C.: Wireless Sensors and Sensors Network. In:
Mukhopadhyay, S.C. (ed.) Intelligent Sensing, Instrumentation and
Measurement. Smart Sensor, Measurement, and Instrumentation, vol. 5.
pp. 55–69. Springer Berlin Heidelberg (2013).
Nicholas, J. V., White, D.R.: Traceable Temperatures - An Introduction to
Temperature Measurement and Calibration, Second Edition. John
Wiley & Sons (2001).
Peterson, K.E.: Silicon as a Mechanical Material. Microelectron. Reliab. 23,
403 (1983).
Preston-Thomas, H.: The International Temperature Scale of 1990 (ITS-
90). Metrologia. 27(3), 3–10 (1990).
Roozeboom, C.L., Hopcroft, M.A., Smith, W.S., Sim, J.Y., Member, S.,
Wickeraad, D.A., Hartwell, P.G., Pruitt, B.L.: Integrated Multifunctional
Environmental Sensors. J. Microelectromechanical Syst. 22(3), 779–793
(2013).
Rotem, E., Hermerding, J., Aviad, C., Harel, C.: Temperature
Measurement in the Intel Core Duo Processor. Procceedings of the
12th International Workshop on Heat Investigations, Therminic, Nice
2006. EDA Publishing Association (2006).
Serway, R.A.: Physics: For Scientists and Engineers with Modern Physics,
3rd Edition. Saunders College Publishing, Philedelphia (1990).
Sharifi, S., Liu, C., Rosing, T.S.: Accurate Temperature Estimation for
Efficient Heat Management. 9th Int. Symp. Qual. Electron. Des. 137–
142 (2008).
Talavera, G., Martin, R., Rodríguez-alsina, A., Garcia, J., Fernández, F.,
Carrabina, J.: Protecting Firefighters with Wearable Devices. In: Bravo,
J., López-de-Ipiña, D., and Moya, F. (eds.) Ubiquitous Computing and
Ambient Intelligence. Lecture Notes in Computer Science, vol. 7657.
pp. 470–477. Springer Berlin Heidelberg (2012).
Tomsen, V.: Response Time of a Thermometer. Phys. Teach. 36, 540–541
(1998).
Touloukian, Y.S., Kirby, R.K., Taylor, R.E., Desai, P.D.: Heat Expansion -
Metallic Elements and Alloys. In: Touloukian, Y.S., Kirby, R.K.,
Taylor, R.E., and Desai, P.D. (eds.) The TPRC Data Series, vol 12.
Plenum Publishing Corporation (1975).
Wagman, D.D., Evans, W.H., Parker, V.B., Schumm, R.H., Halo, I.,
Bailey, S.M., Churney, K.L., Nuttall, R.L.: The NBS Tables of
Chemical Thermodynamic Properties. J. Phys. Chem. Data. 11, Supp.,
1–392 (1982).
Yacobi, B.G.: Semiconductor Materials : An Introduction to Basic
Principles. Kluwer Academic Publishers, Secaucus, NJ (2002).
The RTD. Omega Engineering Inc.,
http://www.omega.com/temperature/Z/TheRTD.html (2014) Accessed
4 May 2014.
ANSI and IEC Color Codes for Thermocouples, Wire and
Connectors/Thermocouple Tolerances. Omega Engineering Inc.,
http://www.omega.com/temperature/pdf/tc_colorcodes.pdf (2014)
Accessed 05 May 2014.
Electrical Conductivity and Resistivity. NTD Resource Center.,
http://www.ndt-ed.org/Education
Resources/CommunityCollege/Materials/Physical_Chemical/Electrical.
htm (2014) Accessed
04 June 2014.
Physical Properties of Thermoelement Material. Omega Engineering Inc.,
http://www.omega.com/ temperature/Z/pdf/z016.pdf (2014) Accessed 04
May 2014.