TLP621,TLP621−2,TLP621−4

TOSHIBA Photocoupler IRED & Photo−Transistor

TLP621,TLP621−2,TLP621−4
Programmable Controller Unit: mm
AC / DC−Input Module
Solid State Relay

The TOSHIBA TLP621, −2 and −4 consists of a photo−transistor

optically coupled to an infrared emitting diode.
The TLP621−2 offers two isolated channels in an eight lead plastic DIP,
which the TLP621−4 provides four isolated channels in a sixteen plastic
DIP.

• Collector−emitter voltage: 55 V (min.)

• Current transfer ratio: 50% (min.) TOSHIBA 11−5B2
Rank GB: 100% (min.) Weight: 0.26 g (typ.)
• Isolation voltage : 5000Vrms(min)
• UL-recognized: UL 1577, File No.E67349
• cUL-approved: CSA Component Acceptance Service No.5A
File No.E67349
• VDE-approved: EN 60747-5-5 (Note 1)

Note 1 :When a VDE approved type is needed,

please designate the Option (D4).

Pin Configurations (top view)

TLP621 TLP621-2 TLP621-4

1 4 1 8 1 16
TOSHIBA 11−10C4
2 3 2 7 2 15 Weight: 0.54 g (typ.)
1: Anode
3 6 3 14
2: Cathode
3: Emitter
4: Collector
4 5 4 13

1, 3: Anode
5 12
2, 4: Cathode
5, 7: Emitter
6, 8: Collector
6 11

7 10

8 9

1, 3, 5, 7: Anode
2, 4, 6, 8: Cathode
9, 11, 13, 15: Emitter
10, 12, 14, 16: Collector
TOSHIBA 11−20A3
Weight: 1.1 g (typ.)

7.62 mm pitch 10.16 mm pitch

standard type TLPxxxF type
• Creepage distance : 6.4 mm (min.) 8.0 mm (min)
Clearance : 6.4 mm (min.) 8.0 mm (min)
Insulation thickness : 0.4 mm (min.) 0.4 mm (min) Start of commercial production
1983-02
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Toshiba Electronic Devices & Storage Corporation
 TLP621,TLP621−2,TLP621−4
● Current Transfer Ratio
Current Transfer Ratio
Classi− (%) (IC / IF) Marking Of
Type fication IF = 5mA, VCE = 5V, Ta = 25°C
*1 Classification
Min. Max.
(None) 50 600 Blank, Y■, YE, G, G■, GR, B, BL, GB
Rank Y 50 150 YE, Y■
Rank GR 100 300 GR, G, G■
Rank BL 200 600 BL,B

TLP621 Rank GB 100 600 GB, GR, G, G■, BL, B

Rank YH 75 150 Y■
Rank GRL 100 200 G
Rank GRH 150 300 G■
Rank BLL 200 400 B

TLP621−2 (None) 50 600 Blank, GR, BL, GB

TLP621−4 Rank GB 100 600 GB, GR, BL

*1: Ex. rank GB: TLP621 (GB)

(Note) Application type name for certification test, please use standard product type name, i.e.
TLP621 (GB): TLP621
TLP621−2 (GB): TLP621−2

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 TLP621,TLP621−2,TLP621−4
Absolute Maximum Ratings (Ta = 25°C)
Rating
Characteristic Symbol TLP621−2 Unit
TLP621
TLP621−4
Forward current IF 60 50 mA
Forward current derating (Note 1) ΔIF /°C −0.7 (Ta ≥ 39°C) −0.5 (Ta ≥ 25°C) mA /°C
Pulse forward current IFP 1 (100μs pulse, 100pps) A
LED

Power dissipation PD 100 70 mW

Power dissipation derating ΔPD /°C −1.0(Ta ≥ 39°C) −0.7(Ta ≥ 25°C) mW /°C
Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Collector−emitter voltage VCEO 55 V
Emitter−collector voltage VECO 7 V
Collector current IC 50 mA
Detector

Collector power dissipation

PC 150 100 mW
(1 circuit)
Collector power dissipation derating
ΔPC /°C −1.5 −1.0 mW /°C
(1 circuit, Ta ≥ 25°C)
Junction temperature Tj 125 °C
Storage temperature range Tstg −55 to 125 °C
Operating temperature range Topr −55 to 100 °C
Lead soldering temperature Tsol 260 (10 s) °C
Total package power dissipation PT 250 150 mW
Total package power dissipation derating
ΔPT /°C −2.5 −1.5 mW /°C
(Ta ≥ 25°C)
Isolation voltage (Note 2) BVS 5000 (AC, 60 s., R.H.≤ 60 %) Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1 : Pw = 100 μs(max), f = 100 Hz
Note 2 : Device considered a two terminal: LED side pins shorted together, and detector side pins shorted together.

Recommended Operating Conditions

Characteristic Symbol Min. Typ. Max. Unit

Supply voltage VCC ― 5 24 V

Forward current IF ― 16 20 mA
Collector current IC ― 1 10 mA
Operating temperature Topr −25 ― 85 °C

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.

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Toshiba Electronic Devices & Storage Corporation
 TLP621,TLP621−2,TLP621−4
Individual Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V

LED

Reverse current IR VR = 5 V — — 10 μA
Capacitance CT V = 0 V, f = 1 MHz — 30 — pF
Collector−emitter
V(BR) CEO IC = 0.5 mA 55 — — V
breakdown voltage
Emitter−collector
V(BR) ECO IE = 0.1 mA 7 — — V
Detector

breakdown voltage
VCE = 24 V — 10 100 nA
Collector dark current ICEO
VCE = 24 V, Ta = 85 °C — 2 50 μA
Capacitance (collector
CCE V = 0 V, f = 1 MHz — 10 — pF
to emitter)

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition MIn. Typ. Max. Unit

IF = 5 mA, VCE = 5 V 50 — 600

Current transfer ratio IC / IF %
Rank GB 100 — 600

IF = 1 mA, VCE = 0.4 V — 60 —

Saturated CTR IC / IF (sat) %
Rank GB 30 — —
IC = 2.4 mA, IF = 8 mA — — 0.4
Collector−emitter
VCE (sat) IC = 0.2 mA, IF = 1 mA — 0.2 — V
saturation voltage
Rank GB — — 0.4

Isolation Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Capacitance (input to output) CS VS = 0 V, f = 1 MHz — 0.8 — pF

Isolation resistance RS VS = 500 V, R.H. ≤ 60 % 1×10 12
1014
— Ω

Isolation voltage BVS AC, 60 s 5000 — — Vrms

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 TLP621,TLP621−2,TLP621−4
Switching Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Rise time tr — 2 —
Fall time tf VCC = 10 V, IC = 2 mA — 3 —
μs
Turn−on time ton RL = 100 Ω — 3 —
Turn−off time toff — 3 —
Turn−on time tON — 2 —
RL = 1.9 kΩ (Note 1)
Storage time tS — 15 — μs
VCC = 5 V, IF = 16 mA
Turn−off time tOFF — 25 —

Note 1 Switching time test circuit

IF VCC IF
VCC
RL tS
VCE 4.5V
VCE
0.5V
tON tOFF

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Toshiba Electronic Devices & Storage Corporation
 TLP621,TLP621−2,TLP621−4

TLP621-2
TLP621 I F – Ta TLP621-4 I F – Ta
100 100

80 80
Allowable forward current

Allowable forward current

60 60
IF (mA)

IF (mA)
40 40

20 20

0 0
-20 0 20 40 60 80 100 120 -20 0 20 40 60 80 100 120

Ambient temperature Ta (°C) Ambient temperature Ta (°C)

TLP621-2
TLP621 P C – Ta TLP621-4 P C – Ta
240 120

200 100
Allowable collector power

Allowable collector power

dissipation PC (mW)

dissipation PC (mW)

160 80

120 60

80 40

40 20

0 0
-20 0 20 40 60 80 100 120 -20 0 20 40 60 80 100 120

Ambient temperature Ta (°C) Ambient temperature Ta (°C)

TLP621-2
TLP621 IFP – DR TLP621-4 IFP – DR
3000 3000
Pulse width ≤ 100μs Pulse width ≤ 100μs
Ta = 25°C Ta = 25°C
IFP (mA)
IFP (mA)

1000 1000

500 500

300 300
Pulse forward current
Pulse forward current

100 100

50 50

30 30

10 10
10-3 10-2 10-1 100 10-3 10-2 10-1 100

Duty cycle ratio DR Duty cycle ratio DR

NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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 TLP621,TLP621−2,TLP621−4

I F – VF ΔVF / ΔTa – IF
100
Ta = 25°C
50 -2.8

coefficient ΔVF / ΔTa (mV /°C)

30

Forward voltage temperature

IF (mA)

-2.4

10
-2.0
5
Forward current

3
-1.6

1
-1.2
0.5
0.3 -0.8

0.1 -0.4
0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 0.3 1 3 10 30

Forward voltage VF (V) Forward current IF (mA)

IFP – VFP ICEO – Ta

1000
Pulse width ≤ 10μs 101
500 Repetitive 10V
IFP (mA)

300 Frequency = 100Hz 5V

VCE = 24V
Dark current ICEO (μA)

Ta = 25°C 100

100

50 10-1
Pulse forward current

30

10-2
10

5
10-3
3

1 10-4
0 0.4 0.8 1.2 1.6 2.0 2.4 0 40 80 120 160

Pulse forward voltage VFP (V) Ambient temperature Ta (°C)

IC – VCE IC – VCE
80
Ta = 25°C 50mA Ta = 25°C
25 40mA
30mA
Collector current IC (mA)

Collector current IC (mA)

60 20 20mA
50mA
30mA
20mA 15
10mA
40
15mA

10 5mA
10mA PC (MAX.)
20
IF = 5mA 5 IF = 2mA

0 0
0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)

NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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 TLP621,TLP621−2,TLP621−4

IC – IF IC / IF – IF
100 500
Ta = 25°C
50 VCE = 5V 300 Sample A

Current transfer ratio IC / IF (%)

(mA)

30 VCE = 0.4V

100
Collector current IC

10
Sample B
Sample A
5 50

3
30
Sample B Ta = 25°C
VCE = 5V
1 VCE = 0.4V
10
0.5

0.3 5
0.3 1 3 10 30 100

0.1
Forward current IF (mA)

0.05
0.03 VCE (sat) – Ta
0.3 1 3 10 30 100 0.20
IF = 5mA
Forward current IF (mA) IC = 1mA
Collector-emitter saturation

0.16
Voltage VCE (sat) (V)

0.12

I C – Ta
100 0.08
VCE = 5V
25mA
50
(mA)

0.04
30
10mA
Collector current IC

0
5mA
10 -20 0 20 40 60 80 100

Ambient temperature Ta (°C)

5

3
Switchingtime – RL
1000
1mA Ta = 25°C
1 IF = 16mA
500
VCC = 5V
0.5
IF = 0.5mA
Switching time (μs)

300
0.3

tOFF

0.1 100
-20 0 20 40 60 80 100

50
Ambient temperature Ta (°C) ts

30

10

3 tON

1
1 3 10 30 100 300

Load resistance RL (kΩ)

NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
© 2019 8 2019-06-24
Toshiba Electronic Devices & Storage Corporation
 TLP621,TLP621−2,TLP621−4
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