Carrier Modeling
Reading Assignment : R.F. Pierret Chap 2
Instructor : Dr.Eng. Arief Udhiarto
Source : U.C. Berkeley
The quantization concept
Bohr Model
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Semiconductor Models
• Bonding Model
• Energy Band Model
Bonding Model
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Bonding Model
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Bond Model of Electrons and Holes
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Energy band Model
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Conduction Band and Valence Band
Electron
Potential
Energy
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The Simplified Energy Band Diagram
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Carriers
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Semiconductors, Insulators, and
Conductors
• Totally filled band and totally empty bands do not allow
current flow. (just as there is no motion of liquid in a
totally filled or totally empty bottle
• Metal conduction band is half-filled
• Semiconductors have lower Eg’s than insulators and
can be doped
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Carrier Properties
Electron as Moving Particle
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Semiconductor Carriers Effective Mass
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Electrons and Holes
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Carrier Concentrations of Pure
(“intrinsic”) Semiconductor
For each electron in the
conduction band (i.e. an
occupied state in CB),
there must be a hole in
the valence band (i.e.
unoccupied state in VB)
Therefore n= p which can
defined as an intrinsic
concentration ni
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Intrinsic Carrier Concentration
versus Temperature
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Manipulation of Carrier
Numbers - Doping
Doping
By substituting a Si atom with a special impurity atom
(Column V or Column III element), a conduction electron
or hole is created.
Dopant concentrations typically range from 1014 cm-3 to 1020 cm-3
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Energy Band Description of Electrons and Holes
Contributed by Donors and Acceptors
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N-type (Arsenic) Doped Silicon
and Its Donor Energy Band
Conducting band, Ec
Si Si Si
Extra
Ed ~ 0.05 eV
Electron
Si As Si Eg = 1.1 eV
Si Si - Si
Valence band, Ev
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P-type (Boron) Doped Silicon
and Its Acceptor Energy Band
Conducting band,
Si Ec
Si Si
Hole
Eg = 1.1 eV
Si B Si
Ea ~ 0.05 eV
Si Si - Si
Valence band, Ev
Electron
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State and Carrier
Distributions
• Density of States
• The Fermi Function
Density of States
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Density of States at Conduction Band:
The Greek Theater Analogy
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The Fermi-Dirac Distribution
(Fermi Function)
Probability of available states at energy E being occupied f(E) =
1/ [1+ exp (E- Ef) /kT]
where Ef is the Fermi energy and k = Boltzmann constant=8.617
.10-5 eV/K
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Properties of the Fermi-Dirac
Distribution
(1) f(E) .exp [- (E- Ef) /kT] for (E- Ef) >3kT
This approximation is called Boltzmann approximation
(2) Probability of available states at energy E NOT being occupied
1- f(E) = 1/ [1+ exp (Ef -E) /kT]
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Equilibrium Carrier
Concentrations
Formula for n and p
Integrate n(E) over all the energies in the
conduction band to obtain
By using Boltzmann approximation, and extending
the integration limit to ~, we obtain
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Integrate p(E) over all energies in the valance
band to optain p
By using Boltzmann approximation, and
extending the integration limit to ~, we obtain
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Fermi Energy (Ei) of Intrinsic
Semiconductor
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Physical Interpretation of NC and NV
The average electron energy <E> of all electrons in conduction band is only 1.5kT above Ec !
We can treat all the available density of states in the conductor band as a single energy level exactly
at EC, with an effective density of states of NC.
The electron concentration can simply be calculated as NC * f(E=EC).
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Charge Neutrality Condition
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Charge-Carrier Concentrations
n : electron concentration (cm-3)
p : hole concentration (cm-3)
N+D : ionized donor concentration (cm-3) ≡ND
N-A : ionized acceptor concentration (cm-3) ≡ NA
(1) Charge neutrality condition:ND +p =NA +n
(2) At thermal equilibrium, np =ni2 (“Law of Mass
Action”)
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n-type and p-type Semiconductors
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The Fermi Energy Ef for doped
semiconductors can be determined from
either one of the following relationships
once n and p are known
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Dependence of Fermi Level with Doping
Concentration
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Carrier Concentration vs Temperature
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