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2SC1344, 2SC1345: Silicon NPN Epitaxial

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0% found this document useful (0 votes)
59 views9 pages

2SC1344, 2SC1345: Silicon NPN Epitaxial

Uploaded by

rolandse
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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2SC1344, 2SC1345

Silicon NPN Epitaxial

Application

Low frequency low noise amplifier

Outline

TO-92 (1)

1. Emitter
2. Collector
3. Base

3
2
1
2SC1344, 2SC1345

Absolute Maximum Ratings (Ta = 25°C)


Item Symbol 2SC1344 2SC1345 Unit
Collector to base voltage VCBO 30 55 V
Collector to emitter voltage VCEO 30 50 V
Emitter to base voltage VEBO 5 5 V
Collector current IC 100 100 mA
Collector power dissipation PC 200 200 mW
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C

Electrical Characteristics (Ta = 25°C)


2SC1344 2SC1345
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base V(BR)CBO 30 — — 55 — — V I C = –10 µA, IE = 0
breakdown voltage
Collector to emitter V(BR)CEO 30 — — 50 — — V I C = 1 mA, RBE = ∞
breakdown voltage
Emitter to base V(BR)EBO 5 — — 5 — — V I E = 10 µA, IC = 0
breakdown voltage
Collector cutoff current I CBO — — 0.5 — — 0.5 µA VCB =18 V, IE = 0
Emitter cutoff current I EBO — — 0.5 — — 0.5 µA VCB = 2 V, IC = 0
1
DC current transfer ratio hFE* 250 — 1200 250 — 1200 VCE = 12 V, IC = 2 mA
Base to emitter voltage VBE — — 0.75 — — 0.75 V VCE = 12 V, IC = 2 mA
Collector to emitter VCE(sat) — — 0.5 — — 0.5 V I C = 10 mA, IB = 1 mA
saturation voltage
Gain bandwidth product f T — 230 — — 230 — MHz VCE = 12 V, IC = 2 mA
Collector output Cob — — 3.5 — — 3.5 pF VCB = 10 V, IE = 0,
capacitance f = 1 MHz
Noise figure NF — — 8 — — 8 dB VCE = 6 V, IC = 0.1 mA,
f = 10 Hz, Rg = 10 kΩ
— — 1 — — 1 dB VCE = 6 V, IC = 0.1 mA,
f = 1 kHz, Rg = 10 kΩ
Note: 1. The 2SC1344 and 2SC1345 are grouped by h FE as follows.
D E F
250 to 500 400 to 800 600 to 1200

2
2SC1344, 2SC1345
Small Signal h Parameters (VCE = 5V, IC = 0.1 mA, f = 270 Hz, Ta = 25°C, Emitter
common)
Item Symbol D E F Unit
Input impedance hie 110 170 240 kΩ
Voltage feedback ratio hre 9.5 14.5 16 × 10 –4
Current transfer ratio hfe 340 540 825
Output admittance hoe 12.0 12.5 13.5 µS

Maximum Collector Dissipation Curve Typical Output Characteristics P


250 10 26 C =
20
Collector Power Dissipation PC (mW)

24 0m
W
22

Collector Current IC (mA)


200 8 20
18
150 6 16
14
12
100 4 10
8
6
50 2
4
2 µA
IB = 0
0 50 100 150 0 4 8 12 16 20 24
Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V)

DC Current Transfer Ratio vs.


Collector Current Typical Transfer Characteristics
700 5
VCE = 12 V
DC Current Transfer Ratio hFE

VCE = 12 V
Collector Current IC (mA)

600 4

500 3
75°C
Ta=
400 2
25

300 1

200
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2 5 10 20 50 0 0.2 0.4 0.6 0.8 1.0
Collector Current IC (mA) Base to Emitter Voltage VBE (V)

3
2SC1344, 2SC1345
Collector Output Capacitance vs.
Base to Emitter Voltage vs. Ambient
Collector to Base Voltage
Temperature
10
0.9

Collector Output Capacitance Cob (pF)


Base to Emitter Voltage VBE (V)

IE = 0
VCE = 12 V
0.8 f= 1 MHz
IC = 2 mA
5

0.7

0.6
2

0.5

0.4 1
–20 0 20 40 60 80 1 2 5 10
Ambient Temperature Ta (°C) Collector to Base Voltage VCB (V)

Emitter Input Capacitance vs.


Emitter to Base Voltage Contours of Constant Noise Figure
10 100
1

10 B
dB
Signal Source Resistance Rg (kΩ)
Emitter Input Capacitance Cie (pF)

VCE = 6 V

dB
8 dB
d
6 dB
IC = 0 30 2 f = 10 Hz

4 dB
f= 1 MHz dB

2 dB
5
10
4d 1
B
6d
B
3 8
dB
10
1.0 dB
2

0.3

1 0.1
1 2 5 10 0.001 0.003 0.01 0.03 0.1 0.3 1.0 3.0
Emitter to Base Voltage VEB (V) Collector Current IC (mA)

4
2SC1344, 2SC1345

Contours of Constant Noise Figure Contours of Constant Noise Figure


100 100 10
VCE = 6 V

Signal Source Resistance Rg (kΩ)


8 dB
Signal Source Resistance Rg (kΩ)

8 dB
f = 120 Hz VCE = 6 V
6 dB

dB
6 dB
f = 1 kHz dB

4
30 30 4

2
dB

dB
2

1
dB

dB
10 10 1
1

2 dB
dB

dB 1
4 dB
d 2
3 6 B 3 dB
8 dB 4
dB d
1.0 1.0 6 B
d
8 B
10 dB
dB
0.3 0.3

0.1 0.1
0.001 0.003 0.01 0.03 0.1 0.3 1.0 3.0 0.001 0.003 0.01 0.03 0.1 0.3 1.0 3.0
Collector Current IC (mA) Collector Current IC (mA)

Noise Figure vs. Collector to


Noise Figure vs. Frequency Emitter Voltage
12 10

10 VCE = 6 V IC = 0.1 mA
8 f = 10 Hz
IC = 0.1 mA
Noise Figure NF (dB)

Noise Figure NF (dB)

Rg = 10 kΩ Rg = 10 kΩ
8
6
6
4
4

2
2

0 0
10 20 50 100 200 500 1k 1 2 5 10 20 50
Frequency f (Hz) Collector to Emitter Voltage VCE (V)

5
2SC1344, 2SC1345

Noise Figure vs. Collector to Noise Figure vs. Collector to


Emitter Voltage Emitter Voltage
10 10

IC = 0.1 mA IC = 0.1 mA
8 f = 120 Hz 8 f = 1 kHz

Noise Figure NF (dB)


Noise Figure NF (dB)

Rg = 10 kΩ Rg = 10 kΩ

6 6

4 4

2 2

0 0
1 2 5 10 20 50 1 2 5 10 20 50
Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V)

6
Unit: mm

4.8 ± 0.3 3.8 ± 0.3

5.0 ± 0.2
2.3 Max
12.7 Min
0.60 Max
0.7

0.5 ± 0.1 0.5

1.27
2.54

Hitachi Code TO-92 (1)


JEDEC Conforms
EIAJ Conforms
Weight (reference value) 0.25 g
Cautions

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received the latest product standards or specifications before final design, purchase or use.
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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