NGTB25N120FL2WAG

IGBT - Field Stop II / 4 Lead

This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. In addition, this new
device is packaged in a TO−247−4L package that provides significant
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reduction in Eon Losses compared to standard TO−247−3L package.
The IGBT is well suited for UPS and solar applications. Incorporated
into the device is a soft and fast co−packaged free wheeling diode with
a low forward voltage.
25 A, 1200 V
VCEsat = 2.0 V
Features
Eon = 0.99 mJ
• Extremely Efficient Trench with Field Stop Technology
• TJmax = 175°C C
• Improved Gate Control Lowers Switching Losses
• Separate Emitter Drive Pin
• TO−247−4L for Minimal Eon Losses
• Optimized for High Speed Switching G

• This is a Pb−Free Devices

E1
Typical Applications E

• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Neutral Point Clamp Topology
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit TO−247
C
Collector−emitter voltage VCES 1200 V E CASE 340AR
E1 G 4 LEAD
Collector current @ TC = 25°C IC 100 A
@ TC = 100°C 25
MARKING DIAGRAM
Pulsed collector current, Tpulse ICM 100 A
limited by TJmax
Diode forward current @ TC = 25°C IF 100 A
@ TC = 100°C 25
Diode pulsed current, Tpulse limited IFM 100 A 25N120FL2
by TJmax AYWWG
Gate−emitter voltage VGE ±20 V
Transient gate−emitter voltage ±30
(Tpulse = 5 ms, D < 0.10)

Power Dissipation @ TC = 25°C PD 385 W

@ TC = 100°C 192
25N120FL2 = Specific Device Code
Operating junction temperature range TJ −55 to +175 °C A = Assembly Location
Storage temperature range Tstg −55 to +175 °C Y = Year
WW = Work Week
Lead temperature for soldering, 1/8″ TSLD 260 °C G = Pb−Free Package
from case for 5 seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION
assumed, damage may occur and reliability may be affected.
Device Package Shipping
NGTB25N120FL2WAG TO−247 30 Units / Rail
(Pb−Free)

© Semiconductor Components Industries, LLC, 2016 1 Publication Order Number:

May, 2016 − Rev. 0 NGTB25N120FL2WA/D
 NGTB25N120FL2WAG

THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case, for IGBT RqJC 0.39 °C/W
Thermal resistance junction−to−case, for Diode RqJC 0.64 °C/W
Thermal resistance junction−to−ambient RqJA 25 °C/W

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage, VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V
gate−emitter short−circuited
Collector−emitter saturation voltage VGE = 15 V, IC = 25 A VCEsat − 2.00 2.40 V
VGE = 15 V, IC = 25 A, TJ = 175°C − 2.40 −
Gate−emitter threshold voltage VGE = VCE, IC = 400 mA VGE(th) 4.5 5.5 6.5 V
Collector−emitter cut−off current, gate− VGE = 0 V, VCE = 1200 V ICES − − 0.4 mA
emitter short−circuited VGE = 0 V, VCE = 1200 V, TJ = 175°C − 4.0 −
Gate leakage current, collector−emitter VGE = 20 V , VCE = 0 V IGES − − 200 nA
short−circuited

Input capacitance Cies − 4243 − pF

Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 159 −
Reverse transfer capacitance Cres − 77 −
Gate charge total Qg − 181 − nC
Gate to emitter charge VCE = 600 V, IC = 25 A, VGE = 15 V Qge − 40 −
Gate to collector charge Qgc − 87 −
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time td(on) − 17 − ns
Rise time tr − 19 −
Turn−off delay time TJ = 25°C td(off) − 113 −
VCC = 600 V, IC = 50 A
Fall time tf − 118 −
Rg = 10 W
Turn−on switching loss VGE = ±15V Eon − 0.99 − mJ
Turn−off switching loss Eoff − 0.66 −
Total switching loss Ets − 1.65 −
Turn−on delay time td(on) − 15 − ns
Rise time tr − 19 −
Turn−off delay time TJ = 175°C td(off) − 120 −
VCC = 600 V, IC = 50 A
Fall time tf − 193 −
Rg = 10 W
Turn−on switching loss VGE = ±15V Eon − 1.2 − mJ
Turn−off switching loss Eoff − 1.3 −
Total switching loss Ets − 2.5 −
DIODE CHARACTERISTIC
Forward voltage VGE = 0 V, IF = 25 A VF − 2.51 3.00 V
VGE = 0 V, IF = 25 A, TJ = 175°C − 2.60 −
Reverse recovery time TJ = 25°C trr − 136 − ns
IF = 25 A, VR = 400 V
Reverse recovery charge diF/dt = 250 A/ms Qrr − 0.6 − mc
Reverse recovery current Irrm − 8.4 − A
Reverse recovery time TJ = 175°C trr − 251 − ns
IF = 25 A, VR = 400 V
Reverse recovery charge diF/dt = 250 A/ms Qrr − 1.91 − mc
Reverse recovery current Irrm − 14 − A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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TYPICAL CHARACTERISTICS

100 100
VGE = 20 V − 13 V VGE = 20 V − 15 V
90 TJ = 25°C 90 13 V
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

80 80
70 70 TJ = 150°C
60 11 V 60
11 V
50 50
40 40 10 V
10 V
30 30
9V
20 9V 20
8V
10 7V 8V 10
7V
0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics Figure 2. Output Characteristics

100 100
VGE = VGE = 20 V − 15 V 13 V
90 TJ = −55°C 90
IC, COLLECTOR CURRENT (A)

20 V − 13 V IC, COLLECTOR CURRENT (A)

80 80
70 70 TJ = 175°C
60 11 V 60
11 V
50 50
40 40 10 V
30 10 V 30
9V
20 20
9V 8V
10 10 7V
7 V and 8 V
0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics Figure 4. Output Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V)

100 3.5
90 TJ = 25°C TJ = 175°C IC = 50 A
IC, COLLECTOR CURRENT (A)

80 3.0
70
60 2.5
IC = 25 A
50
40 2.0
30 IC = 15 A
20 1.5
10
0 1.0
0 2 4 6 8 10 12 14 16 18 −75 −50 −25 0 25 50 75 100 125 150 175 200
VGE, GATE−EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Transfer Characteristics Figure 6. VCE(sat) vs. TJ

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TYPICAL CHARACTERISTICS

10,000 100
Cies TJ = 25°C
90

IF, FORWARD CURRENT (A)

80
CAPACITANCE (pF)

70 TJ = 175°C
1000 TJ = 25°C
60
50
Coes 40
100
30
Cres 20
10
10 0
0 10 20 30 40 50 60 70 80 90 100 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VCE, COLLECTOR−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V)
Figure 7. Typical Capacitance Figure 8. Diode Forward Characteristics

16 1.4
VGE, GATE−EMITTER VOLTAGE (V)

VCE = 600 V
14 1.3
VGE = 15 V
1.2 IC = 25 A
SWITCHING LOSS (mJ)

12 Rg = 10 W Eon
1.1
10 1.0
8 0.9
0.8 Eoff
6
0.7
4 VCE = 600 V
VGE = 15 V 0.6
2 IC = 25 A 0.5
0 0.4
0 50 100 150 200 0 20 40 60 80 100 120 140 160 180 200
QG, GATE CHARGE (nC) TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Typical Gate Charge Figure 10. Switching Loss vs. Temperature

1000 6
VCE = 600 V
VGE = 15 V
tf 5 Eoff
TJ = 175°C
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)

Rg = 10 W
100 td(off) 4

tr 3
Eon

10 td(on) 2
VCE = 600 V
VGE = 15 V
IC = 25 A 1
Rg = 10 W
1 0
0 20 40 60 80 100 120 140 160 180 200 10 20 30 40 50 60 70 80 90
TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (A)
Figure 11. Switching Time vs. Temperature Figure 12. Switching Loss vs. IC

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TYPICAL CHARACTERISTICS

1000 7
VCE = 600 V
6 VGE = 15 V

SWITCHING LOSS (mJ)

TJ = 175°C
SWITCHING TIME (ns)

td(off) Eon
5 IC = 25 A
100 tf
tr 4

td(on) 3
10
VCE = 600 V 2
VGE = 15 V Eoff
TJ = 175°C 1
Rg = 10 W
1 0
10 20 30 40 50 60 70 80 90 5 10 15 20 25 30 35 40 45 50 55 60 65 70
IC, COLLECTOR CURRENT (A) RG, GATE RESISTOR (W)
Figure 13. Switching Time vs. IC Figure 14. Switching Loss vs. RG

1000 2.25
VGE = 15 V
2.00 TJ = 175°C Eon
td(off)
SWITCHING LOSS (mJ)

IC = 25 A
SWITCHING TIME (ns)

tf 1.75 Rg = 10 W
tr
1.50 Eoff
100
td(on)
1.25

VCE = 600 V 1.00

VGE = 15 V
TJ = 175°C 0.75
IC = 25 A
10 0.50
5 10 15 20 25 30 35 40 45 50 55 60 65 70 350 400 450 500 550 600 650 700 750 800
RG, GATE RESISTOR (W) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. RG Figure 16. Switching Loss vs. VCE

1000 1000
IC, COLLECTOR CURRENT (A)
SWITCHING TIME (ns)

100
tf
td(off) dc operation
100 10
VGE = 15 V 50 ms
TJ = 175°C Single Nonrepetitive 100 ms
IC = 25 A Pulse TC = 25°C
Rg = 10 W 1
tr Curves must be derated 1 ms
linearly with increase
td(on) in temperature
10 0.1
350 400 450 500 550 600 650 700 750 800 1 10 100 1K 10K
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Switching Time vs. VCE Figure 18. Safe Operating Area

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TYPICAL CHARACTERISTICS

1000 280

trr, REVERSE RECOVERY TIME (ns)

VR = 400 V
IC, COLLECTOR CURRENT (A)

240

200
100 TJ = 175°C, IF = 25 A
160

120
10
80
TJ = 25°C, IF = 25 A
40
VGE = 15 V, TC = 175°C
1 0
1 10 100 1K 10K 100 300 500 700 900 1100
VCE, COLLECTOR−EMITTER VOLTAGE (V) diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 19. Reverse Bias Safe Operating Area Figure 20. trr vs. diF/dt
Qrr, REVERSE RECOVERY CHARGE (mC)

Irm, REVERSE RECOVERY CURRENT (A)

3.0 50
VR = 400 V VR = 400 V
2.5
40
TJ = 175°C, IF = 25 A
2.0
TJ = 175°C, IF = 25 A
30
1.5
20
1.0
TJ = 25°C, IF = 25 A TJ = 25°C, IF = 25 A
10
0.5

0 0
100 300 500 700 900 1100 100 300 500 700 900 1100
diF/dt, DIODE CURRENT SLOPE (A/ms) diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 21. Qrr vs. diF/dt Figure 22. Irm vs. diF/dt

4.5

4.0
VF, FORWARD VOLTAGE (V)

IC = 50 A
3.5

3.0
IC = 25 A
2.5
IC = 15 A
2.0

1.5

1.0
−75 −50 −25 0 25 50 75 100 125 150 175 200
TJ, JUNCTION TEMPERATURE (°C)
Figure 23. VF vs. TJ

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TYPICAL CHARACTERISTICS

120
VCE = 1200 V,
Rgate = 10 W,
100 VGE = 15 V

80
TC = 80°C
Ipk (A)

60
TC = 80°C
40

TC = 110°C
20

0
0.01 0.1 1 10 100 1000
FREQUENCY (kHz)
Figure 24. Collector Current vs. Switching Frequency

1
RqJC = 0.39
R(t), SQUARE−WAVE PEAK (°C/W)

50% Duty Cycle

0.1 20%
10%
5% Ri (°C/W) Ci (J/W)
Junction R1 R2 Rn Case 0.0000 0.0000
0.01 2%
0.0931 0.0034
0.0559 0.0179
0.1139 0.0278
0.1187 0.0842
0.001 C1 C2 Cn 0.0079 3.9962

Duty Factor = t1/t2

Single Pulse Peak TJ = PDM x ZqJC + TC
0.0001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
PULSE TIME (sec)
Figure 25. IGBT Transient Thermal Impedance
1
R(t), SQUARE−WAVE PEAK (°C/W)

RqJC = 0.64

50% Duty Cycle Ri (°C/W) Ci (J/W)

0.011340 0.000088
0.014990 0.000667
20% 0.016940 0.001867
0.042332 0.002362
0.1 10% Junction R1 R2 Rn Case 0.078099 0.004049
0.047602 0.021008
0.036620 0.086355
5% 0.075461 0.132519
0.175331 0.180361
2% C1 C2 Cn 0.135892 0.735876

Duty Factor = t1/t2

Single Pulse Peak TJ = PDM x ZqJC + TC
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
PULSE TIME (sec)
Figure 26. Diode Transient Thermal Impedance

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Figure 27. Test Circuit for Switching Characteristics

Figure 28. Definition of Turn On Waveform

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 NGTB25N120FL2WAG

Figure 29. Definition of Turn Off Waveform

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

TO−247 4−LEAD
CASE 340AR
ISSUE A
SCALE 1:1 DATE 07 MAY 2020

GENERIC
MARKING DIAGRAM*

XXXXXXXXX
AYWWG

XXXXX = Specific Device Code *This information is generic. Please refer to

A = Assembly Location device data sheet for actual part marking.
Y = Year Pb−Free indicator, “G” or microdot “G”, may
WW = Work Week or may not be present. Some products may
G = Pb−Free Package not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98AON97044F Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: TO−247 4−LEAD PAGE 1 OF 1

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