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Academic Year 2020-2021 ODD SEM Department of Electronics and Instrumentation Engineering Unit II

The document outlines the topics to be covered in Class 1 of the third semester Electronics and Instrumentation Engineering course. The topics include the principle of operation of PNP and NPN transistors, CE, CB, and CC transistor configurations and their characteristics, DC load line and operating point selection, various biasing methods for BJTs, and BJT modeling through h-parameters. The class aims to help students understand the working of basic transistor circuits and analyze various configurations, biasing techniques, and small signal models.

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68 views3 pages

Academic Year 2020-2021 ODD SEM Department of Electronics and Instrumentation Engineering Unit II

The document outlines the topics to be covered in Class 1 of the third semester Electronics and Instrumentation Engineering course. The topics include the principle of operation of PNP and NPN transistors, CE, CB, and CC transistor configurations and their characteristics, DC load line and operating point selection, various biasing methods for BJTs, and BJT modeling through h-parameters. The class aims to help students understand the working of basic transistor circuits and analyze various configurations, biasing techniques, and small signal models.

Uploaded by

sivaeeinfo
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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Academic year 2020-2021 ODD SEM

Department of Electronics and Instrumentation Engineering


Unit II

Year (I/II/III/IV) : II Semester: III

Course Title : Electron Devices and Circuits

Class Topic(s) No./Title General objective Specific Objectives (SO)


SO 1: Compare the constructions of PN
junction diode and transistor. (U/C), S, T, E
SO 2: Summarize the operating principle of

T1: Principle of Students will be able to PNP transistor. (U/C), S, E


C1 operation of PNP and comprehend the working of PNP SO 3: Explain the operating principle of
NPN transistors (Unit-II) and NPN transistors. NPN transistor. (U/C), S, E
SO 4: Compare the PNP and NPN
transducers in terms of their construction
and working principle. (U/C), S, T, E
C2 T2: study of CE, CB Students will be able to SO 1: Represent transistor based circuit
and CC configurations comprehend and analyze the CE,
diagram for CE configuration and formulate
and comparison of their CB and CC transistor
characteristics, configurations input and output characteristics. (U/C), S, E
SO 2: Represent transistor based circuit
diagram for CB configuration and formulate
input and output characteristics. (U/C), S, E
SO 3: Represent transistor based circuit
diagram for CC configuration and formulate
input and output characteristics. (U/C), S, E
SO 4: Compare the CE, CB and CC
transistor configuration based on their
characteristics. (U/C), S, E
SO 1: Summarize the steps to obtain DC
load line from transistor characteristics.
Students will be able to
T3: DC Load line, comprehend the concept of DC (U/C), S, E
operating point Load line and analyze operating SO 2: Outline the operating point selection
point selection process
process based on the given input.
(An/C), S, E
So 1: Explain the need for biasing
C3
techniques. (U/C), S, E
Students will be able to SO 2: Assess the performance of each
T4: Various biasing
comprehend the need for biasing biasing techniques using circuit diagram,
methods for BJT,
and apply suitable biasing
Design Stability and input and output variables. (Ap/C), S, E, M
techniques for stable operation of
Thermal run away SO 3: Select appropriate biasing
transistor
techniques for a given application
(Ap/C), S, E, M
C4 T5: BJT Modeling- Students will be able to SO 1: Represent replace the BJT with
Determination of h- comprehend the small signal model
simpler circuit elements that produce
parameters Analysis of of Transistor and apply suitable
a transistor amplifier biasing techniques for stable functionality equivalent to that of the
circuit using h- operation of transistor
transistor. . (U/C), S, E
SO 2: Formulate circuit diagram and assess
the mathematical expression for input
impedance, output impedance, voltage gain
and current gain for various transistor
parameters configurations (With and without biasing).
. (Ap/C), S, E, M
SO 3:
Compute hybrid parameter for a simple
transistor amplifier circuit. (Ap/C), S, E, M

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