CERITFICATE

It is Certified that ANIL KUMAR CHAUDHARY (Enrollment no-060963326442)

has carried out the research work presented in this thesis entitled “Reliability
Prediction Design For Inverters In Hybrid Electrical Vehicles Under Different
Switching Pattern” for the award of Master of Technology from Gautam
Buddh Technical University,, Lucknow under my supervision. The thesis embodies
results of original work, and studies are carried out by the student himself/herself
(print only that is applicable) and the contents of the thesis do not form the basis for
the award of any other degree to the candidate or to anybody else from this or any
other University/Institution.

Signature
S.K.SINGH
SCIENTIST-C
DOEACC Centre,
M.M.M. Engineering College Campus,
Gorakhpur 273010 (U.P.)
Date:

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 ABSTRACT

IGBT based inverters are increasingly being used in various applications associated
with variable frequency AC drives. Because most of the power electronic devices are
built without redundancy the reliability analysis is important. Various methods to
predict the reliability for IGBT based inverters with specific applications like in HEVs
have been proposed in literature. In such work the component reliability along with
temperature cycling is considered exclusive of type of PWM firing being employed.
This project work deals with the electrical and thermal modelling of three phase IGBT
inverter which is capable of determining the junction temperature of the components
over short mission profiles. The reliability is analysed considering temperature cycles
for two different PWM techniques: Six step PWM and Space vector PWM. In
addition, the expected component reliability is calculated. As a basis for the reliability
computation, failure-rate catalogs, such as Military Handbook 217F, Thermal network
modelling handbook, are used.
IGBT switching losses are not actively reduced, as is normal practice, but
instead are actively increased to generate the required losses. Free-wheeling diodes
are also tested, but do not have significant switching losses, as the nature of the test
circuit dictates that these be transferred to the IGBTs.
Results of the simulations and literature review were used to develop
design criteria for a new thermal test circuit. The new thermal test circuit was then
designed and its performance compared to the criteria and to the simulation
results of the conventional circuit. The circuit was then built and its performance
was validated. The circuit complied with the performance criteria, in particular the
desired variation in , to an adequate degree of accuracy. IGBT switching losses
are not actively reduced, as is normal practice, but instead are actively increased
to generate the required losses. Free-wheeling diodes are also tested, but do not have
significant .switching losses, as the nature of the test circuit dictates that these be
transferred to the IGBTs.
A power losses simulation model for a three-phase inverter power module (IPM)
and thermal simulation using SVPWM and Six-step generation technique is proposed.
In this model, an inverter drive system simulation model with the aim of fast and
efficient power loss and thermal analysis for inverter power devices in electrical
vehicle applications is presented. This approach has a fast simulation speed and
produces the voltages and currents associated with each of the semiconductor
switches in real-time by using above firing techniques. . This information is then used
in conjunction with detailed device switching models, to describe the heat-source
terms for a thermal solver, this allows electro-thermal performance of the inverter to
be predicted over long periods of real time. This simulation methodology brings
together accurate models of the electrical systems performance, state of the art-device
compact models and a realistic simulation of the thermal performance in a useable
period of CPU time.

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The losses in IGBT i.e. conduction loss and switching loss is calculated and fed to the
thermal model. Here it should be noted that switching losses in an IGBT can be found
by using datasheets. The thermal model gives the junction temperature as an output,
which is later used in calculating reliability of the devices.
It can be used to improve the efficiency of inverter and the ultimate
thermal design, and predict the working temperature of IGBT devices in order
to avoid fault of devices. Based on this calculation method of the steady junction
temperature, we would like to research the thermal capacitor and predict the transient
junction temperature on the varying load in the future.
According to failure-rate catalogs, temperature cycles are of particular
importance for the reliability of power semiconductors. A MATLAB based
programming, detecting all relevant temperature cycles within the computed
temperature curve is developed. Finally, the applicability and significance of the
presented reliability prediction method is assessed.

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 ACKNOWLEDGEMENT

I am immensely delighted to express my gratitude to my project supervisor, Shri

Sanjay Kumar Singh, Scientist-C, DOEACC Centre, Gorakhpur for his guidance,
cooperation and all the facilities he provided for the successful completion of this
project.
Words are not enough for the thankfulness to Shri. H.P. Shukla, Director, DOEACC
Centre, Gorakhpur for his support and invaluable help at the important instances
during the course of this project.
I feel great pleasure in expressing the indebtedness to Shri Nishant Tripathi
Scientist-B, Shri A.G.RAO Scientist-B of DOEACC Centre, Gorakhpur for his
wholehearted support and painstaking help, even at those moments whenever the
needs occurred.
I express my heartly thanks to Shri S.C. Agrawal, H.S. Rai, Shri Raj Kumar, Shri
Bhairav Mishra and Shri Rajesh Chauhan for their cooperation and help at time to
time during the finalization of this project

My special thanks to my friends R.K. Sagar, Ashish Agrawal, Abhay Mukherjee &
Mahesh Kumar Singh for their invaluable help and teaching. Many thanks to my
nephew Anamika Patel and my beloved parents and family whom patience and
moral support helped me to do my work to success.
Finally, I would like to extend my gratitude to all other students and staff at NIELIT
GORAKHPUR, for the nice environment, helps and friendship they always provided.

ANIL KUMAR CHAUDHARY

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 TABLE OF CONTENTS
Page No.

Certificate i
Abstract ii
Acknowledgement iv
Table of Contents v
List of Tables vii
List of Figures viii
List of Abbreviations x

CHAPTER 1: INTRODUCTION 1-8

1.1 INTRODUCTION 2
1.2 RELIABILITY 5
1.3 PREDICTION MODELS 7
1.4 OUTLINE OF THESIS 8
1.5 CONCLUSION 8

CHAPTER 2: BASICS OF RELIABILITY CALCULATION 9-17

2.1 INTRODUCTION 10
2.2 MILITARY HANDBOOK (MIL-HDBK-217F) METHOD 14
2.2.1 Component failure rate for IGBT 14
2.2.2 Component failure rate for Diode 15
2.3 CALCULATION OF LIFETIME 15
2.3.1 Coffin-Manson fatigue life relationship 15
2.3.2 Arrhenius Equation 16
2.4 FAILURE MODES AND EFFECTS ANALYSIS 16
(FMEA)
2.5 CONCLUSION 17

CHAPTER 3: ELECTRICAL MODELING AND

CALCULATION OF POWER LOSSES 18-40
3.1 INTRODUCTION 19
3.2 INSULATED GATE BIPOLAR TRANSISTORS (IGBT) 19
3.2.1 IGBT Selection 21
3.2.2 Specifications 21
3.3 DEVELOPMENT OF POWER LOSSES MODEL 25
3.3.1 Static Power Losses 25
3.3.2. Non-Static Power Losses 29
3.4 THREE PHASE IGBT INVERTER 32
3.4.1 Hex Bridge 32

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 3.4.2 PWM in Three Phase Inverter 33
3.4.3 Linear Modulation Region 33
3.5 SPACE VECTOR PWM TECHNIQUE 33
3.6 SIX-STEP GENERATOR 36
3.7 CALCULATION OF POWER LOSSES 37
3.7.1 Conduction Losses 37
3.7.2 Switching Losses 38
3.8 CONCLUSION 40

CHAPTER 4: THERMAL MODELING AND CALCU-

-LATION OF JUNCTION TEMPERATURE 41-49
4.1 INTRODUCTION 42
4.2 THERMAL MODEL OF THE IGBT 43
4.2.1 Thermal Equivalent Circuit 43
4.2.2 Calculation Of Junction Temperature 43
4.3 EXTRACTION OF MODEL PARAMETERS 45
4.4 DETECTION OF TEMPERATURE CYCLES 47
4.5 CONCLUSION 49

CHAPTER 5: SIMULATION AND RESULTS 50-83

5.1 INTRODUCTION 51
5.2 CALCULATION OF LIFETIME 52
5.3 THREE PHASE INVERTER 56
5.4 CONTROL CIRCUIT 57
5.5 CALCULATION OF LOSSES IN IGBT 58
5.5.1 Conduction Losses 58
5.5.2 Switching Losses 58
5.6 THERMAL MODEL 61
5.7 RESULTS AND DISCUSSION 72
5.7.1 Six Step Generation Technique 72
5.7.2 Space Vector PWM Technique 78
5.7.3 Comparison of Reliabilities 83

CHAPTER 6: CONCLUSION AND FUTURE WORK 84-86

6.1 CONCLUSION 85
6.2 FUTURE SCOPE 85

LIST OF PUBLISHED PAPER & JOURNALS

LIST OF REFERENCES
APPENDIX

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LIST OF TABLES

Table 5.1 Parameters of Fitted Zth Curve 65

Table 5.2 Values of Coefficients 65
Table 5.3 Calculated Rth and Cth values 66
Table5.4 Number of Temperature Cycles and Reliability for 77
Six step generation
Table 5.5 Number of Temperature Cycles and Reliability for 82
SVPWM
Table 5.6 Calculated MTTFs 83

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LIST OF FIGURES

Fig.1.1 Overview of Thesis Model 3

Fig.2.1 Block diagram showing basic structure of simulation tool. 12

Fig.2.2 Failure hazard curve (life characteristic curve or risk profile) 14

Fig.3.1 Cross section of a typical IGBT cell and Electronic

symbol for depletion- model IGBT 20

Fig.3.2 Transfer Characteristics of an IGBT 22
Fig.3.3 V-I Characteristics of an IGBT 23
Fig.3.4 Overview and Breakdown of Total Power Losses 24
Fig.3.5 SKiiP 942GB120-317CTV Module Topology showing user
Defined positive current direction 25
Fig.3.6 SKiiP Module Topology showing Lower Power Diode
Conduction conditions 26

Fig.3.7 Electrical Model of SKiiP Module Topology showing user

defined negative current direction 27
Fig.3.8 SKiiP Module Topology showing Upper Power Diode
Conduction conditions 28
Fig.3.9 Hex Bridge 32
Fig.3.10 SVPWM Technique 34

Fig.3.11 Three Phase PWM Waveforms 35

Fig.3.12 High Level Schematic of Six-step Generator 36
Fig.3.13 Graphical Representation of the Six-Step Generator Limits 37
Fig.3.14 Switching Characteristics of an IGBT 38
Fig. 4.1 Electro-thermal Semiconductor Device Model 42
Fig.4.2 Equivalent thermal network of a semiconductor device and 44
Heat sink

Fig.4.3 Transient thermal impedance curves of IXER 35N120D1 46

Fig.4.4 Cycle Detection Flow Chart 48

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Fig.5.1 Block Diagram Representation of Model 51
Fig.5.2 Life Time Estimation 53
Fig.5.3 Failure rate of IGBT 54
Fig.5.4 Failure rate of DIODE 55
Fig.5.5 Reliability Comparison between IGBT & DIODE 56
Fig 5.6 Temperature Variation In Inverter 58
Fig 5.7 Power Loss Variation with Temperature in Switching Device 61
Fig .5.8 Block Diagram Representation of THERMAL MODEL 62
Fig.5.9 Simulink Model conventional electro-thermal system model 62
Fig.5.10 Waveform conventional electro-thermal system model 63

Fig.5.11 Transient Thermal Impedance Curve 64

Fig5.12 Simulink Model Ideal switch electro-thermal system model 66
Fig.5.13 Waveform Ideal switch electro-thermal system model 67

Fig.5.14 Simulink Model DIODE electro-thermal system model 68

Fig.5.15 Waveform DIODE electro-thermal system model 69
Fig.5.16 Simulink Model IGBT electro-thermal system model 70

Fig.5.17 Waveform IGBT electro-thermal system model 71

Fig.5.18 Stator Current, Speed and Torque Curve 73
Fig. 5.19 Power Loss, Junction Temperature Curve 74
Fig.5.20 Detected Temperature Cycles for IGBT 75
Fig.5.21 Detected Temperature Cycles for Diode 76
Fig. 5.22 Stator Current, Speed and Torque 78

Fig 5.23 Power Loss and Temperature Curves 79

Fig.5.24 Detected temperature Cycles for IGBT 80
Fig.5.25 Detected temperature Cycles for Diode 81

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LIST OF ABBREVIATIONS

HEV Hybrid Electrical Vehicle

IGBT Insulated Gate Bipolar Transistor
PWM Pulse Width Modulation
SVPWM Space Vector Pulse Width Modulation
VSI Voltage Source Inverter
FACTS Flexible AC Transmission System
FIT Failure in Time
MIL-HDBK Military Handbook
Θ Temperature
MTTF Mean Time To Failure
NPT Non-Punch- Through
PT Punch Through
F(t) Probability of Failure
Ma Amplitude Modulation Ratio
Pcond Conduction Loss
Ta Ambient Temperature
Zth Transient Thermal Impedance
IPM Inverter Power Module
GTO Gate Turn-off Thyristor
( ) Turn-on Switching Loss

( ) Turn-off Switching Loss