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Isc N-Channel MOSFET Transistor Irfz34N: INCHANGE Semiconductor Product Specification

This document provides product specifications for the INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ34N. It lists the features of advanced process technology, dynamic dv/dt rating, operating temperature up to 175°C, and fast switching. It is designed for use in switch mode power supplies and general applications. The document provides maximum ratings and thermal, electrical characteristics for the transistor.

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Andres Vivas
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42 views2 pages

Isc N-Channel MOSFET Transistor Irfz34N: INCHANGE Semiconductor Product Specification

This document provides product specifications for the INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ34N. It lists the features of advanced process technology, dynamic dv/dt rating, operating temperature up to 175°C, and fast switching. It is designed for use in switch mode power supplies and general applications. The document provides maximum ratings and thermal, electrical characteristics for the transistor.

Uploaded by

Andres Vivas
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor isc Product Specification

isc N-Channel MOSFET Transistor IRFZ34N

FEATURES
·Advanced Process Technology
·Dynamic dv/dt Rating
·175°C Operating Temperature
·Fast Switching
·Fully Avalanche Rated

DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage 55 V

VGS Gate-Source Voltage-Continuous ±20 V

ID Drain Current-Continuous 26 A

IDM Drain Current-Single Pluse 100 A

PD Total Dissipation @TC=25℃ 56 W

TJ Max. Operating Junction Temperature -55~175 ℃

Tstg Storage Temperature -55~175 ℃

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance, Junction to Case 2.7 ℃/W

Rth j-a Thermal Resistance, Junction to Ambient 62 ℃/W

isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark

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INCHANGE Semiconductor isc Product Specification

isc N-Channel MOSFET Transistor IRFZ34N

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 55 V

VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V

RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 16A 0.04 Ω

IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA

VDS= 55V; VGS= 0 25


IDSS Zero Gate Voltage Drain Current μA
VDS= 44V; VGS= 0; Tj= 150℃ 250

VSD Forward On-Voltage IS= 16A; VGS= 0 1.6 V

isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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