JEPPIAAR ENGINEERING COLLEGE

DEPT.OF ELECTRONICS & INSTRUMENTATION ENGG.

QUESTION BANK
EC8351 - ELECTRON DEVICES AND CIRCUITS
III SEMESTER EIE (2017-2020 BATCH)
The student should be made to:
∙Understand the structure of basic electronic devices.
∙Be exposed to active and passive circuit elements.
∙Familiarize the operation and applications of transistor like BJT and FET.
∙Explore the characteristics of amplifier gain and frequency response.
∙Learn the required functionality of positive and negative feedback systems.

UNIT I PN JUNCTION DEVICES 9

PN junction diode –structure, operation and V-I characteristics, diffusion and transition capacitance - Rectifiers –
Half Wave and Full Wave Rectifier,– Display devices- LED, Laser diodes, Zener diodecharacteristics- Zener
Reverse characteristics – Zener as regulator

UNIT II TRANSISTORS AND THYRISTORS 9

BJT, JFET, MOSFET- structure, operation, characteristics and Biasing UJT, Thyristors and IGBT - Structure and
characteristics.

UNIT III AMPLIFIERS 9

BJT small signal model – Analysis of CE, CB, CC amplifiers- Gain and frequency response – MOSFET small signal
model– Analysis of CS and Source follower – Gain and frequency response- High frequency analysis.
UNIT IV MULTISTAGE AMPLIFIERS AND DIFFERENTIAL AMPLIFIER 9
BIMOS cascade amplifier, Differential amplifier – Common mode and Difference mode analysis – FET input stages
– Single tuned amplifiers – Gain and frequency response – Neutralization methods, power amplifiers –
Types (Qualitative analysis).

UNIT V FEEDBACK AMPLIFIERS AND OSCILLATORS 9

Advantages of negative feedback – voltage / current, series , Shunt feedback –positive feedback – Condition for
oscillations, phase shift – Wien bridge, Hartley, Colpitts and Crystal oscillators.

TOTAL : 45 PERIODS

TEXT BOOKS:
1. David A. Bell ,”Electronic devices and circuits”, Oxford University higher education, 5th edition 2008.
2. Sedra and smith, “Microelectronic circuits”,7th Ed., Oxford University Press
REFERENCES:
1.Balbir Kumar, Shail.B.Jain, “Electronic devices and circuits” PHI learning private limited, 2ndedition 2014.
2.Thomas L.Floyd, “Electronic devices” Conventional current version, Pearson prentice hall, 10th Edition, 2017.
3.Donald A Neamen, “Electronic Circuit Analysis and Design” Tata McGraw Hill, 3rd Edition, 2003.
4.Robert L.Boylestad, “Electronic devices and circuit theory”, 2002.
5.Robert B. Northrop, “Analysis and Application of Analog Electronic Circuits to Biomedical Instrumentation”,
CRC Press, 2004.
 UNIT I
PN JUNCTION DIODE
PART-A
1. What are valence electrons?
Electron in the outer most shell of an atom is called valence electron.
2. What is forbidden energy gap?
The space between the valence and conduction band is said to be forbidden energy gap.
3. What are conductors? Give examples?
Conductors are materials in which the valence and conduction band overlap each other
so there is a swift movement of electrons which leads to conduction. Ex. Copper, silver.
4. What are insulators? Give examples?
Insulators are materials in which the valence and conduction band are far away from
each other. So no movement of free electrons and thus no conduction. Ex glass, plastic.
5. What are Semiconductors? Give examples?
The materials whose electrical property lies between those of conductors and insulators
are known as Semiconductors. Ex germanium, silicon.
6. What are the types of Semiconductor?
Intrinsic semiconductor
Extrinsic semiconductor.
7. What is Intrinsic Semiconductor?
Pure form of semiconductors are said to be intrinsic semiconductor. Ex germanium,
silicon.
8. What is Extrinsic Semiconductor?
If certain amount of impurity atom is added to intrinsic semiconductor the resulting
semiconductor is Extrinsic or impure Semiconductor.
9. What are the types of Extrinsic Semiconductor?
P-type Semiconductor
N- Type Semiconductor.
10. What is P-type Semiconductor?
The Semiconductor which are obtained by introducing pentavalent impurity atom
(phosphorous, antimony) are known as P-type Semiconductor.
11. What is N-type Semiconductor?
The Semiconductor which are obtained by introducing trivalent impurity atom (gallium,
indium) are known as N-type Semiconductor.
12. What is doping?
Process of adding impurity to an semiconductor atom is doping. The impurity is called
dopant.
13. Which is majority and minority carrier in N-type Semiconductor?
Majority carrier: electrons and minority carrier: holes.
14. Which is majority and minority carrier in P-type Semiconductor?
Majority carrier: holes and minority carrier: electrons.
15. What is a PN junction diode?
A PN junction diode is a two terminal device consisting of a PN junction formed either of
Germanium or Silicon crystal. A PN junction is formed by diffusing P type material to one half
side and N type material to other half side.
16. What is depletion region in PN junction? (MAY/JUNE 2012)
The diffusion of holes and electrons will result in difference in concentration across the
junction which in turn results in the movement of the mobile charge carriers to the
junction thus resulting in a region called depletion region.
17. What is barrier voltage?
Because of the oppositely charged ions present on both sides of PN junction an electric
potential is established across the junction even without any external voltage source
which is termed as barrier potential.
18. What is meant by biasing a PN junction?
Connecting a PN junction to an external voltage source is biasing a PN junction.
19. What are the types of biasing a PN junction?
Forward bias
Reverse bias.
20. Define Static resistance and Dynamic resistance? (May 2013)
The resistance offered by the diode to DC operating conditions is called “Static resistance” and
the resistance offered by the diode to AC operating conditions is called “Dynamic resistance”.
21. Explain the terms knee voltage and breakdown voltage? (Nov 2010)
Knee voltage: The forward voltage at which the current through the PN junction starts increasing
rapidly is known as knee voltage. It is also called as cut-in voltage or threshold voltage.
Breakdown voltage: It is the reverse voltage of a PN junction diode at which the junction breaks
down with sudden rise in the reverse current.
22. Write down and explain junction diode equation.
The equation which explains the forward and reverse characteristics of a semiconductor diode is
known diode equation. The diode current is given by

Where Io = reverse saturation current

 = 1 for Ge diodes , 2 for silicon diodes
V- External voltage
VT = volt equivalent of temperature. = T/11,600
23. Define the term the drift current.
If a steady electric field is applied across a semiconductor, it causes the free electrons to move
towards the positive terminal and the holes move towards the negative terminal of the battery.
This combined effect causes a current flow in the semiconductor. The current produced in this
manner is known as drift current.
Drift current density due to electr

a.
Drift current density due to holes

b.
Jn = Drift current density due to electrons
Jp = Drift current density due to holes
q = Charge of the carrier
n = Mobility of electrons
p = Mobility of holes
E = Applied electric field strength.

24. What is diffusion current? (APR/MAY 2015 ,NOV/DEC 2015)

In a semiconductor it is possible to have a non uniform distribution of carriers. A concentration
gradient exists if the number of either holes or electrons is greater in one region as compared to
the rest of the region. The holes and electrons then tend to move from a region of higher
concentration to lower concentration region.
This process is known as diffusion and the electric current produced due this process is known as
diffusion current.
25. What is forward bias and reverse bias in a PN junction?
When positive of the supply is connected to P type and negative to N type then it is
forward bias. When positive of the supply is connected to N type and negative to P type
then it is reverse bias.
26. What is Reverse saturation current?
The current due to the minority carriers in reverse bias is said to be reverse saturation
current.
27. What is reverse break down?
During reverse bias after certain reverse voltage the current through the junction
increases abruptly thus breaking the crystal which is termed as reverse break down.

28. Give the diode current equation? (APRIL/MAY 2011,NOV/DEC 2016)

I  I 0  eV VT  1
I – Total diode current
I0 - reverse saturation current
V – Applied voltage
 – Constant which is 1 for Germanium and 2 for Silicon
VT - voltage equivalent of temperature (VT = T/11600)
29. Give two applications of PN junction diode.
As rectifier in power supplies.
As switch in logic circuits
30. Why contact differences of potential exist in PN junction?
When a PN junction is formed by placing a p-type and n-type material in intimate
contact, the Fermi level throughout the newly formed specimen is not constant at
equilibrium. There will be transfer of electron and energy until Fermi levels in the two
side did line up. But the valence and conduction band in P - side cannot be at the at the
same level as in N side. This shift in energy level results in contact difference of
potential .
31. Give the expression of contact difference of potential?
kT ln N D N A
E0 
a.
ni2

32. What is the total current at the junction of PN junction diode?

The total in the junction is due to the hole current entering the n material and the electron current
entering the p material. Total current is given by

33. What is the diffusion length for holes (Lp)?

Diffusion length of holes can be said as the mean distance of travel of hole before
recombination.

34. State the law of junction relating the boundary value of injected minority carrier
concentration with applied voltage?
The law of junction gives the density of minority carriers injected into a material across the
junction. In a PN junction diode, concentration of holes injected in to the n region is given by
Pn (0)  pno eV VT

35. Compare PN diode ad Zener Diode

36. What is Zener breakdown?
Zener break down takes place when both sides of the junction are very heavily doped and
consequently the depletion layer is thin and consequently the depletion layer is tin. When a small
value of reverse bias voltage is applied, a very strong electric field is set up across the thin
depletion layer. This electric field is enough to break the covalent bonds. Now extremely large
number of free charge carriers are produced which constitute the zener current. This process is
known as Zener break down.
37. What is avalanche break down? (APRIL/MAY 2011), (NOV/DEC 2011)
When bias is applied, thermally generated carriers which are already present in the diode acquire
sufficient energy from the applied potential to produce new carriers by removing valence electron
from their bonds. These newly generated additional carriers acquire more energy from the
potential and they strike the lattice and create more number of free electrons and holes. This
process goes on as long as bias is increased and the number of free carriers gets multiplied. This
process is termed as avalanche multiplication. Thus the break down which occurs in the junction
resulting in heavy flow of current is termed as avalanche break down.
38. How does the avalanche breakdown voltage vary with temperature?
In lightly doped diode an increase in temperature increases the probability of collision of
electrons and thus increases the depletion width. Thus the electrons and holes needs a high
voltage to cross the junction. Thus the avalanche voltage is increased with increased temperature.
39. How does the Zener breakdown voltage vary with temperature?
In heavily doped diodes, an increase in temperature increases the energies of valence electrons,
and hence makes it easier for these electrons to escape from covalent bonds. Thus less voltage is
sufficient to knock or pull these electrons from their position in the crystal and convert them in to
conduction electrons. Thus Zener break down voltage decreases with temperature.

40. Mention the types of junction capacitance. (MAY/JUNE 2013)

 Depletion layer capacitance or transition capacitance
 Diffusion capacitance

41. Define the term transition capacitance CT of a PN diode. (NOV/DEC 2009)
Transition capacitance is formed during the reverse bias of the PN junction diode,
k
CT 
 VB  V  n
Where, k = constant depending on the nature of the semiconductor
 VB = barrier voltage
 V = applied reverse voltage
 = a constant depending on the nature of the junction
42. Define the term diffusion capacitance or storage capacitance. (Nov 2014, NOV/DEC
2017,APR/MAY 2018)
The diffusion capacitance effect is found when the diode is forward biased and it is defined as
the rate of change of injected charge with voltage and given by

I = diode current, VT = volt equivalent temperature.

VT = T /11,600
 = constant = 1 for Ge diodes 2 for silicon diodes
 = mean life time

43. Define rectifier

A rectifier is an electrical device that converts alternating current to direct current.
Typically this is done with a diode because they have the ability to conduct current one
way & block current from going in the other way.
44. What is a rectifier and list its types? (Nov 2014) (APR/MAY 2015)
Rectifier is a circuit which converts a.c. to d.c. signal.
Half-wave rectifier: It is the simplest type of rectifier, which is made with just one diode. 
Full-wave rectifier: This rectifier is essentially made of two half-wave rectifiers, and can be
made with two diodes and an earthed centre tap on the transformer. The centre tap allows the
circuit to be completed because current cannot flow through the other diode.
Bridge rectifier: A bridge rectifier makes use of four diodes in a bridge arrangement to achieve
full-wave rectification. 
45. Define: Ripple factor.
It is the ratio of a.c voltage to d.c voltage or a.c. current to d.c. current
46. Define filter and its need. (NOV/DEC 2009)
A filter is a component that is used to reduce the ripple voltage. Generally the component used is
a capacitor.
47. Draw the circuit diagram and output wave form for half wave rectifier

48. Draw the circuit diagram and output wave form for full wave rectifier
49. Draw the circuit diagram for a full wave rectifier using bridge rectifier

50. Define PIV, what is the value of PIV for bridge wave rectifier? (NOV/DEC 2011)
PIV is the peak voltage across the diode in the reverse direction.
PIV for HWR = Esm = EDC | IDC = 0
PIV for FWR = 2Esm = EDC | IDC = 0
PIV for bridge wave FWR = Esm

51. Define and explain peak inverse voltage ( PIV) (Nov 2010)
Peak inverse voltage is the maximum reverse voltage that can be applied to the PN junction
without damage to the junction. If the reverse voltage across the junction exceeds to its peak
inverse voltage, the junction may be destroyed due to excessive heat.
52. What is meant by transformer utilization factor?
It is the ratio of power delivered to the load to the volt ampere rating of transformer.
53. Mention some characteristics of LASER diode.
It is coherent i.e. there is no path difference between the waves comprising the beam.
It is monochromatic i.e. it consists of one wavelength and hence one colour only.
It is collimated i.e. emitted light waves travel parallel to each other.
54. Mention some applications of LASER diode. APR/MAY 2017
Laser diodes used in variety of applications ranging from medical equipment used in surgery to
consumer products like optical disk equipment, laser printers, hologram scanners, etc. Laser
diodes emitting visible light are used as pointers. Those emitting visible and infrared light are
used to measure the distance.
55. Draw the symbol of the following device (i)PN diode (ii)Zener diode (iii)LED (iv)UJT
(NOV/DEC 2015)

56. State few applications of Zener diode?(NOV/DEC 2016)

Zener diodes can be found in several applications. Some of these are: voltage stabilizers or regulators
(in shunt mode), surge suppressors for device protection, peak clippers, switching operations,
reference elements and in meter protection applications. The constant reverse voltage of a Zener
diode renders it a very useful component in regulating the output voltage against variations in the load
 resistance or variations in the input voltage from an unregulated power supply. The current through
the Zener diode will change in order to keep the voltage within the threshold limits of Zener action
and the maximum power that it can dissipate.

57.Differentiate between zener breakdown and avalanche breakdown. APR/MAY 2017

 Zener breakdown and avalanche breakdown are processes by which diodes begin to
conduct significant currents, when they are subject to a high reverse voltage.
 Zener breakdown occurs when the doping levels are high, and involves electrons
tunnelling from the valence band of the p side to the conduction band on the n side.
 Avalanche breakdown occurs when charge carriers which are accelerated by the electric
field gain enough kinetic energy such that, when they collide with lattice atoms, they
ionise the lattice atoms to produce electron-ion pairs. These pairs, in turn, cause further
ionisations, leading to an “avalanche” effect.

PART – B
UNIT 1

1. With neat sketch explain the construction, operation and its characteristics of PN junction diode.
also list its Advantages and its applications. NOV/DEC 2014, NOV/DEC 2015
[David A. Bell ,”Electronic Devices and Circuits” page no.34-50]
2. (i)Draw the circuit diagram of a half wave rectifier for producing a positive output voltage.
Explain the circuit operation and sketch the waveforms.NOV/DEC 2015,NOV/DEC 2016
[David A. Bell ,”Electronic Devices and Circuits” page no.71-75]
(ii) Explain the action of a full wave rectifier using diodes and give waveforms of input and
output voltages. APR/MAY 2015, APR/MAY 2018

[David A. Bell ,”Electronic Devices and Circuits” page no.75-79]

(iii) Derive an expression for a ripple factor,vge,ct,efficiency,piv,tuf in a full wave rectifier with
resistive load.(APR/MAY 2015, APR/MAY 2018)
3. Explain the working of bridge rectifier. Give the Expression for RMS current, PIV, Ripple factor
and efficiency. NOV/DEC 2014, APR/MAY 2017, NOV/DEC 2017
4. With neat diagram, explain the operation of Zener diode and its forward and reverse
characteristics .Also distinguishes between Avalanche and Zener breakdowns. NOV/DEC 2015
[David A. Bell ,”Electronic Devices and Circuits” page no.59-65]
5. Briefly discuss about the following: APR/MAY 2015
i LED & Laser diodes. APR/MAY 2018
[David A. Bell ,”Electronic Devices and Circuits” page no.948-951,981-985]
ii Zener diode as a voltage regulator. APR/MAY 2017 , NOV/DEC 2017
[David A. Bell ,”Electronic Devices and Circuits” page no.108-112]
6. Derive the Expression of the space charge or transition capacitance of PN diode under reverse
bias with a neat diagram . NOV/DEC 2016, APR/MAY 2017 [David A. Bell ,”Electronic
Devices and Circuits” page no.50-53] [Robert L.Boylestad, “Electronic Devices
and Circuit theory” page no.31-32]

UNIT II
TRANSISTORS
PART-A
1. What is a transistor (BJT)?
 Transistor is a three terminal device whose output current, voltage and /or power is controlled by
input current.
2. What are the terminals present in a transistor?
Three terminals: emitter, base, collector.
3. Why do we choose Q point at the center of the load line?
The operating point of a transistor is kept fixed usually at the center of the active region in order
that the input signal is well amplified. If the point is fixed in the saturation region or the cut off
region the positive and negative half cycle gets clipped off respectively.
4. List out the different types of biasing.
Voltage divider bias
Base bias
Emitter feedback bias
Collector feedback bias
Emitter bias.
5. What do you meant by thermal runway?
Due to the self heating at the collector junction, the collector current rises. This causes damage to
the device. This phenomenon is called thermal runway.
6. Why is the transistor called a current controlled device?
The output characteristics of the transistor depend on the input current. So the transistor is called
a current controlled device.
7. Define current amplification factor?
It is defined as the ratio of change in output current to the change in input current at constant.
8. What is Q-point or operating point? (MAY/JUNE 2012)
We set a fixed level of certain currents and voltages in a transistor. These values define a point
called as the Q-point or the operating point
9. What are the requirements for biasing circuits?
The Q point must be taken at the Centre of the active region of the output characteristics.
Stabilize the collector current against the temperature variations.
Make the Q point independent of the transistor parameters.
When the transistor is replaced, it must be of same type.
10. When does a transistor act as a switch?
The transistor acts as a switch when it is operated at either cutoff region or saturation region
11. What is biasing? (MAY/JUNE 2012)
To use the transistor in any application it is necessary to provide sufficient voltage and current to
operate the transistor. This is called biasing.
12. What is meant by biasing a transistor?(Nov 2014)
Transistor biasing is the process of maintaining proper flow of zero signal collector current and
collector-emitter voltage during the passage of signal. Biasing keeps emitter-base junction
forward biased and collector-base junction reverse biased during the passage of signal.
13. What is stability factor?
Stability factor is defined as the rate of change of collector current with respect to the rate of
change of reverse saturation current.
14. Explain about the various regions in a transistor?
The three regions are active region saturation region cutoff region.
15. Explain about the characteristics of a transistor?
Input characteristics: it is drawn between input voltage & input current while keeping output
voltage as constant.
Output characteristics: It is drawn between the output voltage &output current while keeping
input current as constant.

16. What are the three types of configurations?

Common base configuration, Common emitter configuration Common collector configuration

17. Which transistor configuration is widely used?(NOV/DEC 2011)

CE is widely used because,
Both the voltage gain and current gain is greater than unity
The ratio of the output impedance to the input impedance is small which makes it ideal for
coupling between various transistor stages
Higher power gain
18. Which configuration is known as emitter follower and why it is named so?
CC configuration is known as emitter follower, whatever may be the signal applied at the input,
may produce same signal at the output. In other words, the gain of the circuit is unity. So that the
common collector circuit - the so called emitter follower is named as emitter follower. (Output
follows the input)
19. What are the disadvantages of collector feedback bias?
The disadvantages of the collector feedback bias are
The collector current is high.
If the AC signal voltage gain feedback into the resistor R e , it will reduce the gain of the amplifier.
20. Why voltage divider bias is commonly used in amplifier circuit?
The voltage divider bias has the following advantages.
The operating point will be in stable position.
The stability will be considerably improved.
IC can be reduce to the collector leakage current I CO.
21. Define the stability factor S for the fixed bias circuit.
The stability factor for the fixed bias circuit is ,
1. S = 1 + β
β – Current gain of the transistor.
22. Why fixed bias circuit is not used in practice?
The stability of the fixed bias circuit is very less. Since the stability factor S = 1 + β, β is a large
quantity, therefore stability is less. So it is not used in the amplified circuits.

23. What is thermal run away? (NOV/DEC 2009), (MAY/JUNE 2013,NOV/DEC 2017)
Due to the self heating at the collector junction the collector current rises. This causes damage to
the device. This phenomenon is called thermal runaway.

24. The reverse saturation current in a silicon diode is 100nA at 27 0 C. find the current through
the diode if the applied forward voltage is 1V.
273  27
VT   25.8mV
11600
 V 
I  I 0 eVT  1

 

 1

 100 x 10 -9 e 2 x 25.8 x 10  1  26 A
-3


 

25. What is the difference between the AC and the DC load line in a CE amplifier having
voltage divider bias and external load resistor RL?
DC load line:
The load resistance is not considered here,
Applying KVL in the CE junction,
VCC  I C RC  VCE  I E RE
Put VCE  0, I C  I E
VCC
I CQ 
RC  RE
Put IC = IE = 0, VCC = VCEQ. Hence the DC load line co – ordinates are (VCEQ, I CQ )
AC load line:
The load resistance is considered here,
The co- ordinates of the AC load line is determined by,
Rac  RC || RL
max VCE  I CQ Rac  VCEQ
VCEQ
max I C  I CQ 
Rac
26. Compare the performance of CE, CB, CC APR/MAY 2017

Parameters CB CE CC

Current gain (Ai) Low High High

 Voltage gain (Vi) High High Low

Input resistance Low Medium High

(Ri)

Output resistance High Medium Low

(Ro)

27. Give the Shockley's equation for FET.

The Shockley's equation give the relation between drain current (l d) in the pinch of region and the
gate to source voltage Vgs

Where Idss = maximum value of drain current when Vgs = 0 , Vp = Pinch off voltage.

28. What is FET?

FET is abbreviated for field effect transistor. It is a three terminal device with its output
characteristics controlled by input voltage.
29. Why FET is called voltage controlled device? (NOV/DEC 2010)
The output characteristics of FET is controlled by its input voltage thus it is voltage controlled.
30. Why do you call FET as field effect transistor?(NOV/DEC 2011)
As it is a voltage controlled device as the output characteristics of FET is controlled by its input
voltage it is called as field effect transistor
31. What are the two main types of FET?
1.JFET 2. MOSFET.
32. What are the terminals available in FET?
Drain 2. Source 3. Gate
33. What is JFET?
JFET- Junction field effect transistor.
34. What are the types of JFET?
N- channel JFET and P- Channel JFET
35. What are the two important characteristics of JFET?
1.Drain characteristics 2. Transfer characteristics.
36. What is Transconductance in JFET?
It is the ratio of small change in drain current to the corresponding change in drain to source
voltage.
37. What is amplification factor in JFET?
It is the ratio of small change in drain to source voltage to the corresponding change in Gate to
source voltage.

38. What is the disadvantage of FET over BJT? (APR/MAY 2011)

Its relative small gain-bandwidth product in comparison with that of a conventional transistor.
Greater susceptibility to damage in its handling.
JFET has low voltage gains because of small transconductance .
Costlier when compared to BJT’s.
39. What are the consideration factors that are used for the selection of an FET amplifier?
The consideration factors are
 Output voltage swing
 Distortion
 Power dissipation
 Voltage gain
 Drift drain current
40. Write the difference types of FET biasing circuits?
 The FET biasing circuits are classified as,
 Gate bias,Self bias,Voltage divider bias,Current source bias ,Zero bias
41. Write the use of JFET as a voltage variable resistor?
One of the applications of voltage resistor (JFET) is to vary the gain of a multistage amplifier, as
the signal level is increased. This action is called automatic gain control (AGC).
42. Mention the advantages of FET over BJT? (Nov 2013)
 The noise level is very low in FET since there are no junctions.
 FET has very high power gain
 Offers perfect isolation between input and output since it has very high input impedance.
 FET is a negative temperature coefficient device hence avoids thermal runaway.
43. Define amplification factor of JFET?(May 2010)
Amplification factor () is defined as the ratio of small change in drain to source voltage (Vds)
to the corresponding change in gate to source voltage (Vgs) at a constant drain current Id.

at constant Id

44. What is a MOSFET? Mention its types.(NOV/DEC 2009)

Metal Oxide Semiconductor Field effect transistor. Its types are
Enhancement type
 N- channel
 P- channel
Depletion type
 N- channel
 P- channel
45. Why self-bias technique is not used in enhancement of type MOSFET?
The self bias technique cannot be used to establish an operating point for the enhancement type
MOSFET because the voltage across RS is in a direction to reverse the gate and a forward gate
bias is required.
46. What is MOSFET? (May 2013)
The MOSFET is an abbreviation of Metal Oxide Semiconductor Field Effect Transistor. It is a
three terminal semiconductor device similar to a FET with gate insulated from the channel.
Therefore it is a also known as insulated Gate (IGFET)
47. Draw one biasing circuit for an enhancement type MOSFET (MAY/JUNE 2013)

48.

ZERO BIASING DRAIN FEEDBACK BIAS VOLTAGE DIVIDER BIAS

49. Differentiate JFET and MOSFET?

JFET MOSFET
Reverse bias for gate Positive or negative gate voltage
Gate is formed as a diode Gate is made as a capacitor
Operated only in depletion mode Can be operated either in depletion mode
or in enhancement mode
High input impedance Very high input impedance due to
capacitive effect
50. Differentiate Enhancement MOSFET and Depletion MOSFET
Enhancement MOSFET Depletion MOSFET
 Positive voltage at the gate Negative voltage at the gate
Inversion layer is made Depletion of majority carries happens
Negative charges are formed Positive charges are formed
51. What does UJT stands for? Justify the name UJT.
UJT stands for uni junction transistor. The UJT is a three terminal semiconductor device having
two doped regions. It has one emitter terminal (E) and two base terminals (B1and B2 ). It has
only one junction, moreover from the outlook; it resembles to a transistor hence the name uni
junction transistor.

52. Give the symbol and structure of UJT. NOV/DEC 2017

53. Give the equivalent circuit of UJT.

54. What is intrinsic stand- off ratio of an UJT? APR/MAY 2017

If a voltage VBB is applied between the bases with emitter open the circuit will behave as a
potential divider. Thus the voltage VBB will be divided across RB1 and RB2 Voltage across
resistance RB1,
RB1 R
V1  VBB  B1 VBB  VBB
RB1  RB 2 RBB
RB1
Where   is called as intrinsic stand -off ratio.
RBB
55. What is interbase resistance of UJT?
The resistance between the two bases (B1and B2) of UJT is called as interbase resistance.
Interbase resistance = RB1 + RB2
RB1- resistance of silicon bar between B 1 and emitter junction.
RB2 - resistance of silicon bar between B2 and emitter junction

56. Give the expression for peak point voltage for UJT?
VP  VBB  VD

57. What are the regions in the VI characteristics of UJT?

 Cut-off region
 Negative resistance region.
 Saturation region
58. Give the VI characteristics of UJT.
59. What is meant by negative resistance region of UJT? (APR/MAY 2011)
In a UJT when the emitter voltage reaches the peak point voltage, emitter current starts flowing.
After the peak point any effort to increase in emitter voltage further leads to sudden increase in
the emitter current with corresponding decrease in emitter voltage, exhibiting negative resistance.
This takes place until the valley point is reached. This region between the peak point and valley
point is called negative resistance region.
60. Mention the applications of UJT.
 It is used in timing circuits
 It is used in switching circuits
 It is used in phase control circuits
 It can be used as trigger device for SCR and TRIAC.
 It is used in saw tooth generator.
 It is used for pulse generation.

61. What is intrinsic stand off ratio of a UJT? (Nov 2013)

The ratio of voltage between emitter and base 1 to V BB is called as intrinsic stand of ratio. The
value lies between 0.51 to 0.82.

62. Compare UJT and FET. (NOV/DEC 2011)

S.No UJT FET
1 Terminals – emitter, Terminals – gate, source,
base1, base 2 drain
2 It is a triggering It is an amplifier
device
3 It has negative It does not
resistance region

63. Differentiate BJT and UJT. (MAY/JUNE 2012)

S.No BJT UJT
1 It has two PN junctions It has only one PN junctions
2 three terminals present are three terminals present are
emitter, base, collector emitter, base1,base2
3 basically a amplifying basically a switching device
device
4 Gate surface is smaller Gate surface is larger
5 It has two PN junctions It has one junctions

64. Compare BJT and JFET (MAY 2010, NOV 2014,MAY 2015, NOV/DEC 2017, APR/MAY
2018)
BJT JFET
Low input impedance High input impedance
High Output impedance Low output impedance
 Bipolar device Unipolar device
Noise is more Less noise
Cheaper Costlier
Gain is more Gain is less
Current controlled device Voltage controlled device
65. What is a thyristor? Mention two of them.(APR/MAY 2015)
A thyristor is a four-layer semiconductor device, consisting of alternating P type and N type
materials (PNPN). The four layers act as bistable switches. As long as the voltage across the
device has not reversed (that is, they are forward biased), thyristors continue to conduct electric
current.
The most common type of thyristor is the (i) silicon-controlled rectifier (SCR) (ii) DIAC (iii)
TRIAC
66. Compare the transistor and thyristors.
S.NO TRANSISTOR THYRISTOR
1. Transistor is a three layer , two Thyristor is a four layer, three junction
junction device device
2. Commutation circuitry which is costly Commutation circuit is required
and bulky, is not required
3. To keep a transistor in the conducting Thyristors require a pulse to make it
state, a continuous base current is conducting and thereafter it remain
required. conducting.

67. Draw the two transistor model of SCR. (JAN2011, APR/MAY 2017)

68. Draw the VI characteristics of a SCR and mark important points.

69. What is meant by latching current & holding current?(Jan 2012)

Latching current is the minimum anode current required to maintain the thyristor in the on
State immediately after a thyristor has been turned on and gate signal has been removed.
Holding current is the minimum anode current to maintain the thyristor in the on state.
70. What is an IGBT? List its types.
Insulated gate bipolar transistor (IGBT) combines the advantages of BJT and MOSFET.
Therefore it has low switching times as well as low power losses.
1. Punch through IGBT 2. Non punch IGBT.
71. Show how an SCR can be triggered on by the application of the pulse to the gate terminal.
(NOV/DEC 2015)
 72. What are the advantages of IGBTs?
They have high input gate impedance.
They have low conduction loss.
They have fast switching characteristics.
They have very high operating frequency.
73. List the applications of IGBTs.
i)They are used in low noise, high performance power supplies.
ii)They are used in inverters.
iii)They are used in motor speed controls.

74. Define Early effect.( NOV/DEC 2016)

The Early effect, named after its discoverer James M. Early, is the variation in the width of the
base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector
voltage.

75.What is break over voltage of SCR APRIL/MAY 2018

Forward break overvoltage of SCR is the minimum forward voltage at which SCR starts
conducting.The voltage at which device starts conduction is called as forward break overvoltage.
In general, this voltage is in the range of 50 to 500 Volts.

PART - B
UNIT 2

1. (i)Explain the construction and operation of NPN transistors with neat sketch. Also comment on
the characteristics of NPN transistor NOV/DEC 2014
[David A. Bell ,”Electronic Devices and Circuits” page no.143-172]
(ii) Explain the input/output characteristics of BJT in common base configuration.MAY/JUN
2014 [David A. Bell ,”Electronic Devices and Circuits” page no.180-204]
(iii)Explain the operation of NPN transistor in CE configuration with its input and output
characteristics. Also define Active, saturation and cut-off region. MAY/JUN 2012, NOV/DEC
2016
[David A. Bell ,”Electronic Devices and Circuits” page no.218-223]
(iv) Compare the performance of a transistor in different configuration.MAY/JUN 2012
2. (i)Explain the selection of Q point for a transistor bias circuit and discuss the limitations on the
output voltage swing. NOV/DEC 2015
(ii) Explain in detail, different biasing methods for a transistor circuit with neat circuit diagram
and obtain respective stability factors.APR/MAY 2011
(iii)Draw a self bias circuit using BJT and derive an expression for the stability factor.
APR/MAY 2015
(iv)Draw the collector to base bias circuit,emitter bias method of a transistor and derive the
expression for the stability factor. NOV/DEC 2009,NOV/DEC 2013, NOV/DEC 2017
(v) Distinguish between d.c and a.c load lines with suitable diagram. APR/MAY 2015
(vi) Explain how potential divider bias is obtained NOV/DEC 2011
[David A. Bell ,”Electronic Devices and Circuits” page no.143-223]

3. (i)Explain the construction and operation of N-channel JFET with neat sketches and
characteristics curve.MAY/JUN 2012
[David A. Bell ,”Electronic Devices and Circuits” page no.345-367,380-396]
 4. With the help of suitable diagram, explain the working of enhancement MOSFET and depletion
MOSFET . APR/MAY 2015, NOV/DEC 2015, NOV/DEC 2013, APR/MAY 2017 , NOV/DEC
2017,APR/MAY 2018
[David A. Bell ,”Electronic Devices and Circuits” page no.367-371,417-420]

5. Describe the construction and working of UJT with its equivalent circuit and V-I characteristics.
APR/MAY 2015, NOV/DEC 2015, NOV/DEC 2013, NOV/DEC 2016)
[David A. Bell ,”Electronic Devices and Circuits” page no.927-934]

6. (i)With neat sketch, explain the construction, operation and characteristics of SCR. NOV/DEC
2014, NOV/DEC 2015, NOV/DEC 2013, NOV/DEC 2016, APR/MAY 2017, APR/MAY 2018,
NOV/DEC 2017)
(ii) Explain the construction and working principles of DIAC and TRIAC with neat sketches.
APR/MAY 2015
(iii) With neat sketch, explain the construction, operation and characteristics of IGBT
APR/MAY 2017[David A. Bell ,”Electronic Devices and Circuits” page no.893-927]

UNIT III
AMPLIFIERS
PART-A
1. What is an amplifier?(APR/MAY 2015)
An amplifier is a circuit which can be used to increase the magnitude of the input current or
voltage at the output by means of energy drawn from an external source.
2. Based on the transistor configuration how amplifiers are classified? (APR/MAY 2015)
Based on transistor configuration, the amplifiers are classified as
 Common emitter amplifier
 Common base amplifier
 Common collector amplifier.
3. List out the classification of large signal amplifiers? (NOV/DEC 2009), (MAY/JUNE 2013)
The large signal amplifiers are classified as follows.
Based on the input
Small signal amplifier
Large scale amplifier
Based on the output
Voltage amplifier
Power amplifier
Current amplifier
Based on the transistor configuration
CE amplifier
CB amplifier
CC amplifier
Based on the number of stages
Single stage amplifier
Multi stage amplifier
Based on band width
Untunned amplifier (wide band amplifier)
Tuned amplifier (narrow band amplifier)
Based on the frequency response
AF(Audio Frequency) amplifier
IF (Intermidiate Frequency) amplifier
RF(Radio Frequency) amplifier
Based on the biasing condition
i. Class A amplifier
ii. Class B amplifier
iii. Class C amplifier
 iv Class AB amplifier
v Class D amplifier
vi Class S amplifier

4. Compare input impedance and voltage gain of CE and CC amplifiers NOV/DEC 2010,
NOV/DEC 2013, APR/MAY 2017
S.No Characteristics CE CC
1 Input Impedance Low High
2 Voltage Gain Medium Low
5. Define hybrid parameters. (MAY 2011,NOV2014)
Any linear circuit having input and output terminals can be analyzed by four parameters are input
impedance, output impedance, current gain and voltage gain.(one measured on ohm, one in mho
and two dimensionless) called hybrid or h-parameters.

6. What are the use of h - Parameters? (NOV/DEC 2009, APR/MAY 2011)

It perfectly isolates the input and output circuits. Its source and load currents are taken into
account.
7. Write the procedure to draw the a.c. equivalent of a network.
 Setting all the dc sources to zero and replacing them by a short circuit equivalent.
 Replacing all capacitors by a short circuit.
 Removing all elements bypassed by the short circuit equivalents introduced by step 1 &
step 2.
 Redrawing the n/w in a more convenient & logical form.
8. What is the effect of coupling capacitors at low frequency?
At low frequency the coupling capacitors acts as open circuit.
9. What is the effect of coupling capacitors at high frequency
At high frequency the coupling capacitors acts as short circuit
10. Which is the most commonly used transistor configuration? Why?
The CE Configuration is most commonly used. The reasons are
High Current gain High voltage gain High power gain
Moderate input to output ratio.
11. What are the values of input resistance in CB, CE & CC Configuration APR/MAY 2017
CB - Low about 75 CE - Medium About 750 CC - Very high about 750
12. Write the voltage and current equation for hybrid parameters.
V1 = h11 i1 + h12 V2
I2 = h21 i1 + h22 V2
13. What are the values of h-parameters?
h11 = V1/ i1
h12 = V1 / V2
h21 = i2 / i1
h22 = i2 / V2
14. Write the hybrid equations of CE amplifier.

15. Write the hybrid equations of CB amplifier.

16. Write the hybrid equations of CCamplifier.

17. What is an amplifier? Compare BJT and FET amplifiers.

An amplifier is a circuit, which can be used to increase the amplitude of the input current
or voltage at the output by means of energy drawn from an external source.

18. Draw a small signal equivalent circuit of CE amplifiers(APR/MAY 2015)

The hybrid small signal equivalent circuit is given by,
19. Compare gain characteristics of CB, CC transistor circuits

CB and CC are nearly opposite in terms of gain and impedance characteristics.

20. Give the significance of coupling and bypass capacitor on BW of amplifiers.
At low frequency the bypass capacitor makes gain to lower value and at higher frequency the
coupling capacitor decreases the gain so at low and high frequencies response curves is varied
and mid range of frequencies the gain is nearly constant.
21. State the reason for fall in gain at low and high frequencies.
The coupling capacitance has very high reactance at low frequency, therefore it will allow only a
small part of signal from one stage and in addition to that the bypass capacitor cannot bypass the
emitter resistor effectively. As a result of these factors the voltage gain rolls off at low frequency.
At high frequency the reactance of coupling capacitor is very low, therefore it behaves like a
short circuit. As a result of this the loading effect of the next stage increases which reduces the
voltage gain. Hence the voltage gain rolls off at high frequency.
22. Write short note on effects of coupling capacitor.
The coupling capacitor transmits a.c. signal but blocks d.c. This prevents d.c. interference
between various stages and the shifting of operating point. It prevents the loading effect between
adjacent stages.
23. Define the frequencies fT & f
fT – It is the frequency at which short circuit gain becomes unity.
f - It is the frequency at which short circuit gain becomes unity.
24. Draw the low frequency incremental model of FET.

25. Draw the frequency response curve of an amplifier.

26. Define transconductance with respect to a JFET NOV/DEV 2017

27. Give the drain current expressions in triode region and in saturation region of MOSFET
In saturation region:

28. Draw the small signal equivalent circuit of CS JFET(NOV/DEC 2015)

29. What is the need of coupling capacitors in amplifier design? (NOV/DEC 2015)
A coupling capacitor is a capacitor which is used to couple or link together only the AC signal
from one circuit element to another. The capacitor blocks the DC signal from entering the second
element and, thus, only passes the AC signal.
30. What are 3 db frequencies?
The frequency at which we have 70.7% of fall from the maximum gain is called 3db frequency
20. In an amplifier the maximum voltage gain is 2000, occurs at 2KHz. It falls to 1414 at 10Hz
and 50Hz.Find i) B.W ii) Lower and upper cut off frequency.

&
31. Define upper and lower cut off frequencies of an amplifier.
The frequency at which the voltage gain of the amplifier is exactly 70.7% of the maximum gain is
known as lower cut off frequency.
The frequency at which the voltage gain of the amplifier, is exactly 70.7% o0f the maximum gain
is known as upper cutoff frequency.
32. Define the term bandwidth and gain bandwidth product.
Bandwidth is defined as the range of frequency over which the gain remains constant.
The product of midland gain and bandwidth is called gain bandwidth product .
33. What are the causes of occurrence of upper cutoff frequency in BJT?
The internal capacitors are the main element for decrease of gain as well as occurance of upper
cut off frequency.
34. List out the application and characteristics of CE amplifier.
It is used as voltage amplifier, among the three basic transistor amplifiers.
Characteristics of CE amplifier:
 It has good voltage gain with phase inversions. i.e. the output voltage is
180°out of phase with input
 It also has good current, power gain and relatively high input and output
impedance.
35. Mention some application of CC amplifier.
 It is used as buffer amplifier as it has unity voltage gain.
 It is used as impedance matching network.
36. What is millers theorem? ( NOV/DEC 2016)
Millers theorem states that the capacitor connected between the input and output can be split in to
two net works such that one network appears as the mirror image of the other one.The impedance
of such network can be taken by open circuiting or short circuiting the common connections exist
between the two net works.
37. Define frequency response.
 Frequency response can be defined as measure of output parameter variation with respect to
variation of input frequency.
38. State the reason for choosing 3 db point to determine the bandwidth.
The reason for choosing 3 db point to determine the bandwidth is that, above this level, larger the
frequency variation (i.e. output delivers the constant output below this level even for lower
frequency variation), the gain variation is large i.e. the output is not constant. Thus 3 db point is
selected as reference to find the bandwidth.
39. Define voltage gain for a JFET CG configuration.

40. Distinguish between CE, CB, and CC amplifiers

41.Draw the hybrid small signal model of CB configuration .( NOV/DEC 2016, APR/MAY
2018)

42. What Is Source Follower? APR/MAY 2018

In electronics, a common-drain amplifier, also known as a source follower, is one of three
basic single-stage field effect transistor (FET) amplifier topologies, typically used as a
voltage buffer.

PART - B
UNIT 3

1. Draw the h-parameter model of a BJT-CE amplifier and derive the equations for voltage gain,
current gain, input impedance and output impedance. (NOV/DEC 2014, APR/MAY 2015,
NOV/DEC 2016, NOV/DEC 2017,APR/MAY 2018)
[David A. Bell ,”Electronic Devices and Circuits” page no.246-262]
2. (i)Draw the a.c equivalent circuit of a C.B amplifier using h-parameter model and derive the
equation for Zi,Zo,Av and Ai. APR/MAY 2015
[David A. Bell ,”Electronic Devices and Circuits” page no.268-275]
(ii) Draw the a.c equivalent circuit of a C.C amplifier using h-parameter model and derive the
equation for Zi,Zo,Av and Ai. [David A. Bell ,”Electronic Devices and Circuits” page
no.263-268]
3. Discuss the factors involved in the selection of Ic,Rc and Re for a single stage common emitter
BJT amplifier circuit ,using voltage divider bias. NOV/DEC 2015
[David A. Bell ,”Electronic Devices and Circuits” page no.275-277]

4. (i)Compare and contrast all the parameters of CC,CB and CC amplifiers. APR/MAY 2015,
NOV/DEC 2013, NOV/DEC 2017
(ii) Explain the mid band analysis of single stage CE,CB,CC AMPLIFIERS APR/MAY 2018
5. (i)With neat circuit diagram ,perform ac analysis for common source and common drain using
equivalent circuit NMOSFET amplifier. (NOV/DEC 2014, NOV/DEC 2015, NOV/DEC 2016,
APR/MAY 2017)
(ii) Mark a high frequency analysis of a common sourcr amplifier NOV/DEC 2017
[David A. Bell ,”Electronic Devices and Circuits” page no.438-448]
6. Describe about small signal MOSFET amplifiers (NMOS) and obtain the expression for its
transconductance. APR/MAY 2015
[David A. Bell ,”Electronic Devices and Circuits” page no.448-461,518-523]

UNIT IV
MULTISTAGE AMPLIFIERS AND DIFFERENTIAL
AMPLIFIER
PART-A

1. What is a differential amplifier? What are its advantages?

An amplifier that has two inputs and produces an output signal that is a function of the difference
between the two inputs. Advantages:
(i) It can compare any two signals and detect any difference. (ii).It gives higher gain than two
cascaded stages of ordinary direct coupling. (iii).It provides very uniform amplification of signal
from dc up to very high frequencies.
2. What are the applications of differential amplifier? (Nov 2011)
 In the medial electronics field
 As a input stage in the measuring instruments
 In analog computation
 In linear integrated circuits

3. What is the need of constant current circuit in differentia amplifier?

The necessary for constant current source for differential amplifier to increase the CMRR
without changing quiescent current and without lowering the forward current gain.

4. Define CMRR.what is its ideal value? (NOV/DEC 2016, NOV/DEC 2015,May 2010/ Nov
2014, APR/MAY 2017)
It is defined as the ratio of the differential voltage gain (A d) to the common mode voltage gain
(Acm) .
CMRR = 20 log (Ad/Acm)
For a perfect differential amplifier, the CMRR is equal to infinity as Acm is zero.
5. State the different methods of biasing of difference amplifier.
a. The different methods of biasing of difference amplifier are,
b. i) Emitter bias ii) Constant current bias
6. Explain the need for constant current source for difference amplifier.
The necessity for constant current source for differential amplifier is to increase the common
mode rejection ratio without changing the quiescent current (operating point) and without
lowering the forward current gain.
7. Why RE is replaced by a constant current bias in a differential amplifier?
The emitter supply VEE used for biasing purpose must become larger as R E is increased in order
to maintain the quiescent current at its proper value. If the operating currents of the transistors
are allowed to decrease, this will lead to higher H ie values and lower values of H fe. Both these
effects will tend to decrease CMRR. To overcome this practical limitations R E is replaced by a
constant current bias.
8. What is the input impedance of a differential amplifier with RE at its emitter junction?
The input impedance of a differential amplifier with RE at its emitter junction is :

9. What should be the value of AC, the common mode gain and Ad the difference mode gain
for an ideal differential amplifier?
The common mode gain of an ideal differential amplifier is 0. The difference mode gain of an
ideal differential amplifier is very high () .
10. Explain why constant current source biasing is preferred for differential amplifier.
The constant current source biasing is preferred for differential amplifier inorder to increase the
input resistance and to make the common mode gain zero.
11. Distinguish between common mod signal and differential mode signal.
If the same input is applied to both the inputs, the operation is called common mode signal. It is
the average value of the input signals.

12. If the two opposite polarity input signals are applied, the operation is referred to as difference
mode. The difference between the input voltages in called difference mode signal.
13. What is the classification of power amplifier?
Class A ,class B, class C, class AB & class D.
14. Explain the difference between voltage and power amplifier.
Voltage Amplifier: The input given to the transistor is in millivolts. The transistor used is a small
signal transistor. Power Amplifier: The input given to the transistor is in volts. The transistor used
is a power transistor.
15. Explain why power amplifier is also known as large signal amplifier.
Since the output obtained from the power amplifier is very large, it is known as large signal
amplifier.
16. How do you bias the class A amplifier? List the advantage of class A amplifiers.
(NOV/DEC 2013)
In class A mode, the output current flows through the entire period of input cycle and the Q point
is chosen at the midpoint of AC load line and biased. An amplifier is a circuit which can be used
to increase the magnitude of the input current or voltage at the output by means of energy drawn
from an external source.
ADVANTAGES OF CLASS A POWER AMPLIFIER.
 Lower distortion
 Higher suppression of ripple and noise from the power supply
 Lower output impedance
 Better DC stability
 Suppression of interference from the loudspeaker connection

17. Which power amplifier gives minimum distortion?

Class C power amplifier gives minimum distortion.
18. Define class A power amplifier.
It is an amplifier in which the input signals and the biasing is such that the output current flows
for full cycle of the input signal.
19. Define class B power amplifier.
It is an amplifier in which the input signal and the biasing is such that the output current flows
for half cycle of the input signal
20. Define class C power amplifier.
It is an amplifier in which the input signal and the biasing is such that the output current
flows for less than half cycle of the input signal
21. Define class AB power amplifier.
It is an amplifier in which the input signal and the biasing is such that the output Current flows
for more than half cycle but less than full cycle of the input signal
22. Define class D power amplifier.
It is an amplifier which is used in digital circuits and also the input signals are pulses.
23. Give two applications of class C power amplifier.
It is used to generate pulses.
It is used to trigger other devices.
24. Write any two characteristics of class A amplifier.
The Q point is placed at the center of the DC load line.
The overall efficiency is 25%.
25. Write any two characteristics of class B amplifier.
The Q point is placed at the cutoff region.
The overall efficiency is 78.5%
26. What is a push pull amplifier?
 Class B amplifier is used as a push pull amplifier which uses two transistors. Both the transistors
work as a push pull arrangement.. i.e. one transistor will be on at a time.

27. What are the features of class – C power amplifier? (APR/MAY 2011)
The output current flows only during a part of the positive half cycle of the input signal. This
condition is achieved by biasing the transistor below cut off.
The output signal does not Resemble the input Signal because it consists of narrow pulses
The class – C amplifiers is the most efficient power amplifier and its overall efficiency, under
certain conditions, may approach even 100%
28. What is meant by cross over distortion? (NOV/DEC 2010), (NOV/DEC 2011),
(MAY/JUNE 2012), (MAY/JUNE 2013, APR/MAY 2018)
In Class – B amplifier, both the transistors are at cut off region that is bias voltage is zero. So
input signal voltage should exceed the barrier voltage to make the transistor conduct until the
input signal exceeds 0.7V for Si and 0.3V for Ge, otherwise the transistor cannot conduct. So
there is a time interval between the positive and the negative alterations of the input signal when
neither transistor is conducting. The resulting distortion in the output signal is cross over
distortion.

29. How crossover distortion is eliminated? (MAY/JUNE 2013)

To avoid crossover distortion, a slight forward bias (0.3V for germanium, 0.6V for silicon)
voltage is applied to the base emitter junction of the transistors. It causes transistor to conduct
immediately when the input signal is applied. So Q point is fixed above the cut-off.
30. State the merits of using push pull configuration. APR/MAY 2018
 The merits of push pull configuration are,
 Efficiency is high (78.5%)
 Figure of merit is high
 Distortion is less
 Ripple present in the output due to power supply is multified.
31. What are the advantages of using complementary symmetry configuration?
The advantages of using complementary symmetry are,
 It does not use center taped transformer either at input or output.
 It uses one PNP transistor and one NPN transistor, hence it provides proper impedance
matching. Hence its voltage gain is unity (i.e., it acts as voltage follower)

32. Define conversion efficiency of a power stage.

The ratio of the AC output power delivered to the load DC input power applied is referred to as
conversion efficiency. It is also called as collector circuit efficiency in case of transistor amplifier

33. Write down the values of maximum possible power conversion efficiency for
 Class A direct coupled
 Class A transformer coupled
 For class A direct coupled η = 25%
 For class A transformer coupled η = 50%
34. State Bisection theorem
This is called Bisection theorem can be applied to any symmetrical network. Emitter
coupled differential amplifier is symmetrical network.
 35. What do you mean by tuned amplifiers?
The amplifiers which amplify only selected range of frequencies (narrow
band of frequencies) with the help of tuned circuits (parallel LC circuit) are called tuned
amplifiers.
36. What are the various types of tuned amplifiers?
 Small signal tuned amplifiers
 Single tuned amplifiers
 Capacitive coupled
 Inductively coupled (or) Transformer coupled
 Double tuned amplifiers
 Stagger tuned amplifiers
 Large signal tuned amplifiers

37. Give the expressions for the resonance frequency and impedance of the tuned circuit.
f = 1 / 2π√ LC & Z R = L/CR
38. What is the response of tuned amplifiers?
The response of tuned amplifier is maximum at resonant frequency and it
falls sharply for frequencies below and above the resonant frequency.
39. When tuned circuit is like resistive, capacitive and inductive?
 At resonance, circuit is like resistive.
 For frequencies above resonance, circuit is like capacitive.
 For frequencies below resonance, circuit is like inductive.
40. What are the various components of coil losses?
 Copper loss
 Eddy current loss
 Hysteresis loss
41. Define Q factor of resonant circuit.
 It is the ratio of reactance to resistance.
 It also can be defined as the measure of efficiency with which inductor
can store the energy.
Q=2п *(Maximum Energy Stored per cycle / Energy dissipated per cycle)
42. What is dissipation factor?
 It is defined as 1/Q.
 It can be referred to as the total loss within a component.
43. Define unloaded and loaded Q of tuned circuit.
 The unloaded Q or QU is the ratio of stored energy to dissipated energy
in a reactor or resonator.
 The loaded Q or QL of a resonator is determined by how tightly the
resonator is coupled to its terminations.
44. Why quality factor is kept as high as possible in tuned circuits?
When Q is high, bandwidth is low and we get better selectivity. Hence Q is kept as high as
possible in tuned circuits. When Q is high inductor losses are less.
45. List various types of cascaded Small signal tuned amplifiers.
Single tuned amplifiers.
Double tuned amplifiers.
Stagger tuned amplifiers.
46. How single tuned amplifiers are classified?
Capacitance coupled single tuned amplifier.
Transformer coupled or inductively coupled single tuned amplifier.
47. What are single tuned amplifiers?
Single tuned amplifiers use one parallel resonant circuit as the load impedance in each stage and
all the tuned circuits are tuned to the same frequency.
48. What are double tuned amplifiers?
Double tuned amplifiers use two inductively coupled tuned circuits per stage, both the tuned
circuits being tuned to the same frequency.
49. What are stagger tuned amplifiers?
Stagger tuned amplifiers use a number of single tuned stages in cascade,
the successive tuned circuits being tuned to slightly different frequencies. (OR)
It is a circuit in which two single tuned cascaded amplifiers having certain bandwidth are taken
and their resonant frequencies are adjusted that they are separated by an amount equal to the
bandwidth of each stage. Since resonant frequencies are displaced it is called stagger tuned
amplifier.
50. What is the effect of cascading single tuned amplifiers on bandwidth?
Bandwidth reduces due to cascading single tuned amplifiers.
51. List the advantages and disadvantages of tuned amplifiers.
Advantages:
 They amplify defined frequencies.
 Signal to Noise ratio at output is good.
 They are well suited for radio transmitters and receivers.
 The band of frequencies over which amplification is required can be
varied.
Disadvantages:
 Since they use inductors and capacitors as tuning elements, the circuit is
bulky and costly.
 If the band of frequency is increased, design becomes complex.
 They are not suitable to amplify audio frequencies.
52. What are the advantages of double tuned amplifier over single tuned amplifier?
It provides larger 3 dB bandwidth than the single tuned amplifier and hence provides the larger
gain-bandwidth product.
It provides gain versus frequency curve having steeper sides and flatter top.
53. What the advantages are of stagger tuned amplifier?
The advantage of stagger tuned amplifier is to have better flat, wideband characteristics.
54. Mention the applications of class C tuned amplifier.
Class C amplifiers are used primarily in high-power, high-frequency applications such as Radio-
frequency transmitters.
 In these applications, the high frequency pulses handled by the amplifier
are not themselves the signal, but constitute what is called the Carrier for
the signal.
 Amplitude modulation is one such example.
 The principal advantage of class-C amplifier is that it has a higher
efficiency than the other amplifiers.
55. What is Neutralization?
The technique used for the elimination of potential oscillations is called neutralization. (OR) The
effect of collector to base capacitance of the transistor is neutralized by introducing a signal that
cancels the signal coupled through collector base capacitance. This process is called
neutralization.
56. What is the use of Neutralization? (NOV/DEC 2015)
BJT and FET are potentially unstable over some frequency range due to the feedback parameter
present in them.
 If the feedback can be cancelled by an additional feedback signal that is equal in
amplitude and opposite in sign, the transistor becomes unilateral from input to output the
oscillations completely stop.
 This is achieved by Neutralization.
57. What are the different types of neutralization?
 Hazeltine neutralization
 Rice neutralization
 Neutrodyne neutralization.
58. What is rice neutralization?
It uses center tapped coil in the base circuit. The signal voltages at the end of tuned base coil are
equal and out of phase.

59. Write down the need of cascading the amplifiers. (Nov 2014)(APR/MAY 2015)
Cascading means connecting the output of one amplifier to the input of another to form a
multistage amplifier. The overall gain of cascaded amplifiers depends on that of each stage and
 the total number of stages. The purpose of cascading amplifiers is to reach the desired signal
power with a minimum amount of distortion, by providing equal overall gain characteristics to all
frequencies in the signal.
60. Draw the ideal tuned circuit and write the expression for its resonant frequency.
(APR/MAY 2015)

Resonance occurs when an LC circuit is driven from an external source at an angular

frequency   at which the inductive and capacitive reactances are equal in magnitude. The
frequency at which this equality holds for the particular circuit is called the resonant frequency.
The resonant frequency of the LC circuit is

where L is the inductance in henries, and C is the capacitance in farads. The angular

frequency   has units of radians per second.
The equivalent frequency in units of hertz is

61. Define conversion efficiency of power amplifier? (NOV/DEC 2016)

The r.m.s. Power delivered to the load (Pac) is therefore given as: The average power drawn from
the supply (Pdc) is given by: ... An output transformer improves the efficiency of the amplifier by
matching the impedance of the load with that of the amplifiers output impedance.

PART-B
UNIT 4
1. With neat sketch explain two stage cascaded amplifier and derive its overall Av,Ai,Ri and Ro
NOV/DEC 2014
[David A. Bell ,”Electronic Devices and Circuits” page no.510-516]

2. Draw the circuit of emitter coupled BJT differential amplifier, and derive expressions for
differential gain, common mode gain and CMRR.( NOV/DEC 2014, APR/MAY 2015,
NOV/DEC 2015, NOV/DEC 2016, NOV/DEC 2017,APR/MAY 2018)
[David A. Bell ,”Electronic Devices and Circuits” page no.510-516]

3. What is Neutralization ?Explain any two method in brief( APR/MAY 2015,NOV/DEC 2016,
APR/MAY 2018)[NOTES]
4. (i)Draw the circuit diagram of a push pull amplifier and explain its working in detail. APR/MAY
2015
(ii) Derive the equation for efficiency of a class B power amplifier. APR/MAY 2015, NOV/DEC
2015, NOV/DEC 2013
(iii) Explain the operation of complementary symmetry push pull amplifiers state its advantages
and disadvantages.
(iv) Explain the working of Class A Power amplifier and derive the expression for the power
output, efficiency, NOV/DEC 2013, APR/MAY 2017
(v) Explain the working of Class C Power amplifier and derive the expression for the power
output, efficiency APR/MAY 2017, NOV/DEC 2017
[David A. Bell ,”Electronic Devices and Circuits” page no.807-833,877-882]
(vi) Discuss the advantage and disadvantage of any three classes of power amplifier
NOV/DEC 2017
5. With the neat circuit, explain and derive the gain and bandwidth of a single tuned amplifier with
its frequency response. NOV/DEC 2015
[David A. Bell ,”Electronic Devices and Circuits” page no.524-530]

6. Draw the circuit of FET input stages, and derive expressions for differential gain, common mode
gain and CMRR APR/MAY 2017 [David A. Bell ,”Electronic Devices and Circuits”
page no.524-530]
 UNIT V
FEEDBACK AMPLIFIERS AND OSCILLATORS
PART-A
1. Define positive feedback?
If the feedback signal is in phase with input signal, then the net effect of the feedback will
increase the input signal given to the amplifier. This type of feedback is said to be positive or
regenerative feedback.
2. Define negative feedback?
If the feedback signal is out of phase with the input signal then the input voltage applied to the
basic amplifier is decreased and correspondingly the output is decreased. This type of feedback is
known as negative or degenerative feedback.
3. Define sensitivity?
Sensitivity is defined as the ratio of percentage change in voltage gain with feedback to the
percentage change in voltage gain without feedback.
4. Define Desensitivity D?
Desensitivity is defined as the reciprocal of sensitivity. It indicates the factor by which the
voltage gain has been reduced due to feedback network.
                               Desensitivity factor (D) = 1+A β.
                        Where
                                    A = Amplifier gain.
                                   β = Feedback factor. 
5. What are the types of feedback?(NOV/DEC-2013, APR/MAY 2018)
i. Voltage-series feedback
ii. Voltage-shunt feedback
iii. Current-series feedback
iv. Current-shunt feedback
6. Define feedback?
A portion of the output signal is taken from the output of the amplifier and is combined with the
normal input signal. This is known as feedback.
7. Give an example for voltage-series feedback.
The Common collector or Emitter follower amplifier is an example for voltage series feedback.
8. Give the properties of negative feedback.
i. Negative feedback reduces the gain
ii. Distortion is very much reduced
9. Distinguish between series and shunt feedback.
S.No Series Feedback Shunt Feedback
(i) In series feedback amplifier, In shunt feedback amplifiers, the
the feedback signal is connected in feedback signal is connected in
series with the input signal. parallel with the input signal.

(ii) It increases the input resistance It decreases the input resistance.

10. Give the effect of negative feedback on amplifier characteristics.

CHARACTERISTICS
Type of feedback Voltage gain Bandwidth Input resistance Output resistance
Current-series Decreases Increases Increases Increases
Voltage-series Decreases Increases Increases Decreases
Voltage-shunt Decreases Increases Increases Decreases
Current-shunt Decreases Increases Increases Increases

11. What   is current-series feedback amplifier. (or) What is Transconductance amplifier?

In a current series feedback amplifier the sampled signal is a current and the feedback signal
(Which is fed in series) is a voltage.
 Io
                                    Gm 
Vi
                         Where
                                    Gm = Amplifier gain.
                                     Io  =  Output current.
                                     Ii    = Input current.  

           
12. What is Voltage shunt feedback? (or) What is transresistance amplifier?
In voltage shunt feedback amplifier the sampled signal is a voltage and the feedback
signal(Which is fed in shunt)is a current.
Vo
                                  R m    (or)    Vo  R m . I i     
Vi
                        Where
                                    Rm = Amplifier gain.
                                    Vo = Output voltage.
                                     Ii  =  Input current.   
13.  What is voltage series feedback amplifier? (or)What is voltage amplifier?
In a voltage series feedback amplifier the sampled signal is a voltage and feedback signal(Which
is fed in series) is also a voltage.
Vo
                                       A 
Vi
                        Where
                                    A  = Amplifier gain.
                                    Vo =  Output voltage.
                                    Vi  =  Input voltage.
14. What is current -shunt feedback amplifier? (or) What is current amplifier?
In a current shunt feedback amplifier, the sampled signal is a current and the feedback
signal(Which is fed in shunt) is a current.
Io
                                              A    (or)    I o  A. I i
Ii
                         Where
                                    A = Amplifier gain.
                                    Io =  Output current.
                                    Ii  =  Input current. 
15. Write the expression for gain with feedback for positive and negative feedback.
 
           For positive feedback:
A
                                       A f   
1  A
           For negative feedback:
A
                                       A f   
1  A
          Where,
                      Af   = Amplifier gain with feedback.
                      A = Amplifier gain without feedback.
         β = Feedback factor. 
16. Give an example for current-series feedback amplifier. (or) Give an example for
Transconductance amplifier.
The common emitter amplifier with Re in the emitter lead and FET common source amplifier
stage with source resistor R are the best expel for current series feedback circuit. 
17. Give an example for Voltage shunt feedback? (or) Give an example for transresistance
amplifier?
The collector feedback biased common emitter amplifier is an example of  voltage – shunt
feedback circuit. 
18. Give an example for voltage series feedback. (or) Give an example for voltage amplifier.
The common collector (or) emitter follower is an example of voltage series feedback.
 19. Distinguish between series and shunt feedback amplifiers.
  Series feedback:
      (i). In series feedback amplifier the feedback signal is connected in series with the input
signal.
    (ii). It increases the input resistance.
 Shunt feedback:
     (i). In shunt feedback amplifier the feedback signal is connected in shunt with the input signal.
    (ii). It decreases  the input resistance.
20. What are the advantages of negative feedback? (NOV/DEC2010), (MAY/JUNE 2012),
(NOV/DEC 2015)
 Gain stability
 Noise reduction
 Reduction in nonlinear distortion
 Bandwidth can be increased
 Increase in input impedence
 Decrease in output impedence
21. What are the drawbacks of negative feedback?(NOV/DEC2009), (NOV/DEC 2011)(APR/
MAY 2015)
There are two disadvantages of negative feedback (i)the overall gain is reduced almost in direct
proportion to the benefits, and it is often necessary to compensate for the decrease in gain by
adding an extra amplifier stage;(ii)the circuit may tend to oscillate, in which case careful design is
required to overcome this problem. Negative feedback is also known as degenerative feedback
because it degenerates (or reduces)the output signal.
22. What is the nature of input and output resistance in negative feedback.
(1) Voltage series feedback:
                            Input impedance:
                                             Zif = Zi / (1+A β)
                            Output impedance:
                                             Zof = Zo / (1+A β) 
(2) Voltage shunt feedback:
                            Input impedance:
                                            Rif = Ri * (1+A β)
                            Output impedance:
                                            Zof = Zo * (1+ A β) 
(3) Current series feedback:
                            Input impedance:
                                             Rif = Zi / (1+A β)
                            Output impedance:
                                             Zof = Zo / (1+A β) 
(4) Current shunt feedback:
                            Input impedance:
                                             Rif = Ri / (1+A β)
                            Output impedance:
                                             Rof = Ro / (1+A β)

23. What is Oscillator circuit?

A circuit with an active device is used to produce an alternating current is called an oscillator
circuit.

24. What are the classifications of Oscillators?(NOV/DEC-2013)

*Based on wave generated:
i. Sinusoidal Oscillator,
ii. Non-sinusoidal Oscillator or Relaxation Oscillator
Ex: Square wave, Triangular wave, Rectangular wave etc.
*According to principle involved:
i. Negative resistance Oscillator
ii. Feedback Oscillator.
 *According to frequency generated:
i. Audio frequency oscillator 20 Hz – 20 kHz
ii. Radio frequency Oscillator 30 kHz – 30 MHz
iii. Ultrahigh frequency Oscillator 30 MHz – 3 GHz
iv. Microwave Oscillator 3GHz – above.
* Crystal Oscillators.
25. What are the types of feedback oscillators?
* RC-Phase shift Oscillator,
* LC-Oscillators
i. Tuned collector Oscillator
ii. Tuned emitter Oscillator
iii. Tuned collector base Oscillator
iv. Hartley Oscillator
v. Colpits Oscillator
vi. Clap Oscillator
26. Define Barkhausen Criterion. (NOV 2009,APR 2011,NOV 2011,MAY 2012,NOV 2014,
NOV/DEC 2016, APR/MAY 2017)
Condition for sustained oscillation,
a. Magnitude condition |Av| = 1
b. Phase condition Av = 0°
These conditions are called as Barkhausen criterion.
27. Write the expression for gain and oscillation frequency for wein bridge oscillator.
(NOV/DEC 2010)(APR/MAY 2015)
1 1
Oscillating frequency, f  and gain,  
2RC 3
28. What are the advantages and drawbacks of RC phase shift oscillator? (APR/MAY 2011)

29. Define Piezoelectric effect. (MAY 2013)

When applying mechanical energy to some type of crystals called piezoelectric crystals the
mechanical energy is converted into electrical energy is called piezoelectric effect.
F  1/T .

30. What is Miller crystal oscillator? Explain its operation.

It is nothing but a Hartley oscillator its feedback Network is replaced by a crystal. Crystal
normally generate higher frequency reactance due to the miller capacitance are in effect between
the transistor terminal.

31. State the frequency for RC phase shift oscillator. APR/MAY 2018
The frequency of oscillation of RC-phase shift oscillator is
F=1/2RC (4k+6)
Where k=2.639.

32. Draw the equivalent circuit of crystal oscillator.

33. .Name two high frequency oscillators. (Nov 2010)
(i) Hartley oscillator (ii) Colpitts oscillator
34. What are the advantages of crystal oscillator?(Nov 2012)
Simple circuit since no tuned circuit is needed other than the crystal it self.
Different frequencies of oscillations can be obtained by simply replacing one crystal by another.
Hence it makes it easy for a radio transistor to work at different frequencies.
Since the frequency of oscillation is set by the crystal, changes in the supply and transistor
parameters does not affect the frequency of oscillation.
35. Mention the types of feedback amplifiers. (Nov 2013)
i) Voltage Series ii) Voltage Shunt iii) Current Series iv) Current Shunt
36. What is the advantage of colpitts oscillator compared to phase shift oscillator? (NOV/DEC
2015)
Colpitts oscillator Advantages: a) Simple construction. b) It is possible to obtain oscillations at
very high frequencies. Disadvantages: a) It is difficult to adjust the feedback as it demands
change in capacitor values. b) Poor frequency stability. Application: a) As a high frequency
generator
Advantages of RC phase shift oscillator. a) Simplicity of the circuit. b) Useful for frequencies in
the audio range. c) A sine wave output can be obtained. Disadvantages of RC phase shift
oscillator. a) Poor frequency stability. b) It is difficult to get a variable frequency output, because
to change the frequency, we need to vary all the resistors and capacitors simultaneously which is
practically very difficult.

37. Differentiate oscillator and amplifier?

Amplifiers and oscillators are components used in electric circuits. The main difference between
amplifier and oscillator is that amplifiers are used to take in an input signal and produce an output
of that signal with an increased amplitude while oscillators are used to generate a periodic signal.

38.What are the Essential Blocks Of Transistor Oscillator.NOV/DEC 2018

UNIT 5
PART -B

UNIT 5

1. i) Explain in detail the advantages of negative feedback. NOV/DEC 2017

ii) Explain with circuit diagram, a negative feedback amplifier and obtain expression for its
closed loop gain. APR/MAY 2015
[Robert L.Boylestad, “Electronic Devices and Circuit theory” page no.751-752]
2. (i)Determine Rif,Rof,Av and Avf for the Voltage shunt feedback amplifier NOV/DEC 2014,
APR/MAY 2015
(ii) Determine Rif,Rof,Av and Avf for the Voltage series feedback amplifier (NOV/DEC 2016,
APR/MAY 2017 [Robert L.Boylestad, “Electronic Devices and Circuit theory” page
no.752-754]
3. Sketch the circuit diagram of a two-stage capacitor coupled BJT amplifier that uses series
voltage negative feedback. Briefly explain how the feedback operates. NOV/DEC 2015
[Robert L.Boylestad, “Electronic Devices and Circuit theory” page no.752-754]
4. Draw circuit of CE amplifier with current series feedback and obtain the expression for
feedback ratio, voltage gain, input and output resistances. NOV/DEC 2014, APR/MAY 2015
[Robert L.Boylestad, “Electronic Devices and Circuit theory” page no.754-756]
5. Discuss in detail the characteristics of current shunt feedback amplifier. NOV/DEC 2013,
APR/MAY 2017[Robert L.Boylestad, “Electronic Devices and Circuit theory” page
no.756-758]
6. Explain the following with neat diagram. NOV/DEC 2014
(i) RC phase shift oscillator NOV/DEC 2014,NOV/DEC 2016, NOV/DEC 2017
[David A. Bell ,”Electronic Devices and Circuits” page no.669-670]
(ii) Hartley oscillator. NOV/DEC 2014, APR/MAY 2017, APR/MAY 2018
[David A. Bell ,”Electronic Devices and Circuits” page no.677-678]
(iii) Colpitts oscillator APR/MAY 2015, APR/MAY 2018
[David A. Bell ,”Electronic Devices and Circuits” page no.674]
(iv) Wein bridge oscillatorAPR/MAY 2015, NOV/DEC 2015, NOV/DEC 2013,
NOV/DEC 2016 , NOV/DEC 2017
[Robert L.Boylestad, “Electronic Devices and Circuit theory” page
no.772]
(v) Crystal oscillator NOV/DEC 2015
[David A. Bell ,”Electronic Devices and Circuits” page no.776-779]