D44H8 / NZT44H8

Discrete POWER & Signal

Technologies

D44H8 NZT44H8

B E
C C
E
TO-220 B
SOT-223

NPN Power Amplifier

This device is designed for power amplifier, regulator and switching
circuits where speed is important. Sourced from Process 4Q.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

VCEO Collector-Emitter Voltage 60 V
IC Collector Current - Continuous 8.0 A
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

D44H8 *NZT44H8
PD Total Device Dissipation 60 1.5 W
Derate above 25°C 480 12 mW/°C
RθJC Thermal Resistance, Junction to Case 2.1 °C/W
RθJA Thermal Resistance, Junction to Ambient 62.5 83.3 °C/W
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm . 2

 1997 Fairchild Semiconductor Corporation

 D44H8 / NZT44H8
NPN Power Amplifier
(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 100 mA, IB = 0 60 V
ICBO Collector-Cutoff Current VCB = 60 V, IE = 0 10 µA
IEBO Emitter-Cutoff Current VEB = 5.0 V, IC = 0 100 µA

ON CHARACTERISTICS
hFE DC Current Gain I C = 2.0 A, VCE = 1.0 V 60
I C = 4.0 A, VCE = 1.0 V 40
VCE(sat ) Collector-Emitter Saturation Voltage I C = 8.0 A, IB = 0.4 A 1.0 V
VBE( sat) Base-Emitter On Voltage I C = 8.0 A, IB = 0.8 A 1.5 V
VBE( on) Base-Emitter On Voltage I C = 10 mA, VCE = 2.0 V 0.52 0.65 V

SMALL SIGNAL CHARACTERISTICS

fT Current Gain - Bandwidth Product I C = 500 mA, VCE = 10 V, 50 MHz

DC Typical Characteristics

Typical Pulsed Current Gain Collector-Emitter Saturation

VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN

vs Collector Current Voltage vs Collector Current

200 0.8
Vce = 5V
125 °C
β = 10
150 0.6

25 °C
100 0.4

- 40 ºC
50 0.2 25 °C
125 ºC
- 40 °C
0 0
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.1 1 10
I C - COLLECTOR CURRENT (A) I C - COLLECTOR CURRENT (A)
P 4Q
 D44H8 / NZT44H8
NPN Power Amplifier
(continued)

DC Typical Characteristics (continued)

Base-Emitter Saturation Base-Emitter ON Voltage vs

VBE(ON)- BASE-EMITTER ON VOLTAGE (V)

Voltage vs Collector Current Collector Current
VBESAT- BASE-EMITTER VOLTAGE (V)

2
1.4
V CE = 5V
β = 10
1.2
1.5
1

- 40 ºC
1 - 40 ºC 0.8
25 °C
25 °C 125 ºC
0.6
125 ºC
0.5
0.4
0.1 1 10 0.1 1 10
I C - COLLECTOR CURRENT (A) I C - COLLECTOR CURRENT (A)
Pr4Q

Collector-Cutoff Current
vs Ambient Temperature
ICBO- COLLECTOR CURRENT (nA)

100
V CB = 50V
10

0.1

0.01
25 50 75 100 125 150
TA - AMBIENT TEMPERATURE ( ºC)
P 4Q

AC Typical Characteristics

Junction Capacitance vs.

Reverse Bias Voltage Safe Operating Area TO-220
 D44H8 / NZT44H8
NPN Power Amplifier
(continued)

AC Typical Characteristics (continued)

Maximum Power Dissipation Maximum Power Dissipation

vs. Case Temperature vs. Ambient Temperature

POWER DISSIPATION vs
AMBIENT TEMPERATURE
1.5
PD - POWER DISSIPATION (W)

1.25

1
SOT-223
0.75

0.5

0.25

0
0 25 50 75 100 125 150
o
TEMPERATURE ( C)

Thermal Response in TO-220 Package