polyfet rf devices

SM724

General Description
Silicon VDMOS and LDMOS SILICON GATE ENHANCEMENT MODE
transistors designed specifically
for broadband RF applications. RF POWER VDMOS TRANSISTOR
Suitable for Military Radios,
Cellular and Paging Amplifier Base 60.0 Watts Single Ended
Stations, Broadcast FM/AM, MRI,
Laser Driver and others. Package Style AM
"Polyfet"TM process features HIGH EFFICIENCY, LINEAR
low feedback and output capacitances,
resulting in high Ft transistors with high
HIGH GAIN, LOW NOISE
input impedance and high efficiency. ROHS COMPLIANT

o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Junction to Maximum Storage DC Drain Drain to Drain to Gate to
Device Case Thermal Junction Temperature Current Gate Source Source
Dissipation Resistance Temperature Voltage Voltage Voltage
o o o o
190 Watts 0.85 C/W 200 C -65 C to 150 C 19.0 A 36 V 36 V 20 V

RF CHARACTERISTICS ( 60.0 WATTS OUTPUT )

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

Gps Common Source Power Gain 10 dB Idq = 0.80 A, Vds = 12.5 V, F = 175 MHz
η Drain Efficiency 75 % Idq = 0.80 A, Vds = 12.5 V, F = 175 MHz
VSWR Load Mismatch Tolerance 20:1 Relative Idq = 0.80 A, Vds = 12.5 V, F = 175 MHz

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS

Bvdss Drain Breakdown Voltage 36 V Ids = 80.00 mA, Vgs = 0V

Idss Zero Bias Drain Current 4.0 mA Vds = 12.5 V, Vgs = 0V

Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V

Vgs Gate Bias for Drain Current 2 5 V Ids = 0.40 A, Vgs = Vds

gM Forward Transconductance 5.2 Mho Vds = 10V, Vgs = 5V

Rdson Saturation Resistance 0.20 Ohm Vgs = 20V, Ids =10.00 A

Idsat Saturation Current 38.00 Amp Vgs = 20V, Vds = 10V

Ciss Common Source Input Capacitance 180.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz

Crss Common Source Feedback Capacitance 14.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz

Coss Common Source Output Capacitance 220.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz

POLYFET RF DEVICES REVISION 10/01/2007

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
 SM724
POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE
SM724 POUT VS PIN Freq=175MHz, VDS=12.5V, Idq=.8A S1C 4 DIE CAPACITANCE
1000
80 14.00

70
13.00
Coss
60
Pout 12.00
50 Ciss
100
40 11.00
Gain
30
10.00 Crss
Efficiency = 75%
20
9.00
10

10
0 8.00
0 2.5 5 7.5 10 12.5 15 17.5 20
0 2 4 6 8 10
PIN IN WAT T S VD S I N VOLTS

IV CURVE ID & GM VS VGS

S1C 4 DIE IV S1C 4 DIE ID & GM Vs VG

50 100.00
45 Id in amps; Gm in mhos
40 Id
35 10.00
ID IN AMPS

30

25 gM
20 1.00
15

10

5
0.10
0
0 2 4 6 8 10 12 14 16 18 20
0 2 4 6 8 10 12 14 16 18
vg=2v Vg=4v VDS IN VOLTS vg=8v
Vg=6v 0 vg=12v Vgs in Volts

Zin Zout PACKAGE DIMENSIONS IN INCHES

Tolerance .XX +/-0.01 .XXX +/-.005 inches

POLYFET RF DEVICES REVISION 10/01/2007

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com